JP5717146B2 - レーザラインビーム改善装置およびレーザ処理装置 - Google Patents

レーザラインビーム改善装置およびレーザ処理装置 Download PDF

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Publication number
JP5717146B2
JP5717146B2 JP2012234158A JP2012234158A JP5717146B2 JP 5717146 B2 JP5717146 B2 JP 5717146B2 JP 2012234158 A JP2012234158 A JP 2012234158A JP 2012234158 A JP2012234158 A JP 2012234158A JP 5717146 B2 JP5717146 B2 JP 5717146B2
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Japan
Prior art keywords
shielding
line beam
laser
steepness
axis end
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JP2012234158A
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English (en)
Japanese (ja)
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JP2014086554A (ja
Inventor
純一 次田
純一 次田
石煥 鄭
石煥 鄭
政志 町田
政志 町田
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Japan Steel Works Ltd
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Japan Steel Works Ltd
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Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Priority to JP2012234158A priority Critical patent/JP5717146B2/ja
Priority to KR1020157008922A priority patent/KR102096829B1/ko
Priority to CN201380055297.5A priority patent/CN104737276B/zh
Priority to SG11201502953QA priority patent/SG11201502953QA/en
Priority to PCT/JP2013/078043 priority patent/WO2014065168A1/ja
Priority to TW102137987A priority patent/TWI632012B/zh
Publication of JP2014086554A publication Critical patent/JP2014086554A/ja
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Publication of JP5717146B2 publication Critical patent/JP5717146B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
JP2012234158A 2012-10-23 2012-10-23 レーザラインビーム改善装置およびレーザ処理装置 Active JP5717146B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012234158A JP5717146B2 (ja) 2012-10-23 2012-10-23 レーザラインビーム改善装置およびレーザ処理装置
KR1020157008922A KR102096829B1 (ko) 2012-10-23 2013-10-16 레이저 라인 빔 개선 장치 및 레이저 처리 장치
CN201380055297.5A CN104737276B (zh) 2012-10-23 2013-10-16 激光线束改善装置及激光处理装置
SG11201502953QA SG11201502953QA (en) 2012-10-23 2013-10-16 Laser line beam improvement apparatus and laser processing apparatus
PCT/JP2013/078043 WO2014065168A1 (ja) 2012-10-23 2013-10-16 レーザラインビーム改善装置およびレーザ処理装置
TW102137987A TWI632012B (zh) 2012-10-23 2013-10-22 雷射線光束改善裝置以及雷射處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012234158A JP5717146B2 (ja) 2012-10-23 2012-10-23 レーザラインビーム改善装置およびレーザ処理装置

Publications (2)

Publication Number Publication Date
JP2014086554A JP2014086554A (ja) 2014-05-12
JP5717146B2 true JP5717146B2 (ja) 2015-05-13

Family

ID=50544548

Family Applications (1)

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JP2012234158A Active JP5717146B2 (ja) 2012-10-23 2012-10-23 レーザラインビーム改善装置およびレーザ処理装置

Country Status (6)

Country Link
JP (1) JP5717146B2 (zh)
KR (1) KR102096829B1 (zh)
CN (1) CN104737276B (zh)
SG (1) SG11201502953QA (zh)
TW (1) TWI632012B (zh)
WO (1) WO2014065168A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10943785B2 (en) 2016-10-06 2021-03-09 The Japan Steel Works, Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6469455B2 (ja) * 2015-01-21 2019-02-13 住友重機械工業株式会社 レーザアニール装置
KR102416569B1 (ko) * 2015-08-27 2022-07-04 삼성디스플레이 주식회사 레이저 결정화 장치
JP2017056489A (ja) * 2015-08-31 2017-03-23 株式会社リコー 光加工装置及び光加工物の生産方法
KR102435765B1 (ko) * 2015-09-14 2022-08-24 삼성디스플레이 주식회사 레이저 결정화 장치
WO2018074283A1 (ja) * 2016-10-20 2018-04-26 株式会社日本製鋼所 レーザ処理装置およびレーザ処理方法
CN113042922B (zh) * 2021-05-17 2023-01-13 深圳市艾雷激光科技有限公司 一种激光焊的方法

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DE19520187C1 (de) * 1995-06-01 1996-09-12 Microlas Lasersystem Gmbh Optik zum Herstellen einer scharfen Beleuchtungslinie aus einem Laserstrahl
JPH10223554A (ja) * 1997-02-07 1998-08-21 Japan Steel Works Ltd:The レーザ照射装置
JPH11283933A (ja) * 1998-01-29 1999-10-15 Toshiba Corp レ―ザ照射装置，非単結晶半導体膜の製造方法及び液晶表示装置の製造方法
JP2000066133A (ja) * 1998-06-08 2000-03-03 Sanyo Electric Co Ltd レ―ザ―光照射装置
TW436639B (en) * 1998-06-08 2001-05-28 Sanyo Electric Co Laser beam producing device
JP3751772B2 (ja) * 1999-08-16 2006-03-01 日本電気株式会社 半導体薄膜製造装置
JP4203635B2 (ja) * 1999-10-21 2009-01-07 パナソニック株式会社 レーザ加工装置及びレーザ加工方法
JP2002252455A (ja) 2001-02-14 2002-09-06 Unipac Optoelectronics Corp Ｉｃチップの剥離方法及び装置
US7387922B2 (en) * 2003-01-21 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system
JP2005217209A (ja) * 2004-01-30 2005-08-11 Hitachi Ltd レーザアニール方法およびレーザアニール装置
JP4610201B2 (ja) * 2004-01-30 2011-01-12 住友重機械工業株式会社 レーザ照射装置
CN101331592B (zh) * 2005-12-16 2010-06-16 株式会社半导体能源研究所 激光照射设备、激光照射方法和半导体装置的制造方法
KR100766300B1 (ko) * 2006-07-12 2007-10-12 (주)미래컴퍼니 레이저 가공슬릿 및 가공장치
JP5191674B2 (ja) * 2007-03-05 2013-05-08 株式会社アルバック レーザーアニール装置及びレーザーアニール方法
JP5235073B2 (ja) * 2007-03-05 2013-07-10 株式会社アルバック レーザーアニール装置及びレーザーアニール方法
JP2009283691A (ja) * 2008-05-22 2009-12-03 Japan Steel Works Ltd:The レーザ光照射方法およびレーザ光照射装置
JP5240764B2 (ja) * 2008-05-28 2013-07-17 株式会社日本製鋼所 レーザ光照射装置
WO2009157373A1 (ja) * 2008-06-26 2009-12-30 株式会社Ihi レーザアニール方法及び装置
JP4678700B1 (ja) * 2009-11-30 2011-04-27 株式会社日本製鋼所 レーザアニール装置およびレーザアニール方法
KR20140020816A (ko) * 2011-06-15 2014-02-19 가부시끼가이샤 니혼 세이꼬쇼 레이저 처리 장치 및 레이저 처리 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10943785B2 (en) 2016-10-06 2021-03-09 The Japan Steel Works, Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
US11676818B2 (en) 2016-10-06 2023-06-13 Jsw Aktina System Co., Ltd Laser irradiation apparatus and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
SG11201502953QA (en) 2015-05-28
TW201417921A (zh) 2014-05-16
JP2014086554A (ja) 2014-05-12
TWI632012B (zh) 2018-08-11
CN104737276B (zh) 2017-05-31
KR102096829B1 (ko) 2020-04-03
CN104737276A (zh) 2015-06-24
WO2014065168A1 (ja) 2014-05-01
KR20150073967A (ko) 2015-07-01

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