JP5713558B2 - Led用低光学損失電極構造体 - Google Patents
Led用低光学損失電極構造体 Download PDFInfo
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- JP5713558B2 JP5713558B2 JP2009510935A JP2009510935A JP5713558B2 JP 5713558 B2 JP5713558 B2 JP 5713558B2 JP 2009510935 A JP2009510935 A JP 2009510935A JP 2009510935 A JP2009510935 A JP 2009510935A JP 5713558 B2 JP5713558 B2 JP 5713558B2
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- 230000003287 optical effect Effects 0.000 title description 4
- 239000000463 material Substances 0.000 claims description 101
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- 239000003989 dielectric material Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 11
- 239000011651 chromium Substances 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 229910001020 Au alloy Inorganic materials 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000003353 gold alloy Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 2
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 2
- 229910000629 Rh alloy Inorganic materials 0.000 claims description 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- 239000000788 chromium alloy Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 2
- 239000010948 rhodium Substances 0.000 claims description 2
- 239000010944 silver (metal) Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 102
- 238000010586 diagram Methods 0.000 description 47
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 41
- 229910004298 SiO 2 Inorganic materials 0.000 description 38
- 238000002310 reflectometry Methods 0.000 description 35
- 229910002601 GaN Inorganic materials 0.000 description 32
- 230000031700 light absorption Effects 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 11
- 230000007480 spreading Effects 0.000 description 11
- 238000003892 spreading Methods 0.000 description 11
- 239000003570 air Substances 0.000 description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 238000000605 extraction Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910019899 RuO Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
入射角の関数としての光反射率曲線は、2つの成分、即ちP偏光の光とS偏光の光とを有する。P偏光の光はブルースターの角を経験し、S偏光の光より低い全体反射率を有する。
Claims (5)
- 第1の平面上に形成された金属電極と、
中心波長λの辺りで発光するように構成されるGaN材料と、
前記GaN材料の前記第1の平面上に形成される、穿孔されていない連続的な1.75λ以上の厚さの二酸化珪素誘電体材料の領域と、
前記穿孔されていない連続的な二酸化珪素材料上に形成される少なくとも1つのDBR対と、を備え、
前記金属電極の一部が、前記誘電体材料及び前記DBR対の双方の上に形成されて、前記誘電体材料の前記領域が前記金属電極と前記GaN材料との間に物理的に配置され、かつ、前記金属電極の別の一部が、前記GaN材料とオーム接触状態にある
反射電極構造体。 - 前記DBR対の各層が、光透過性であり、互いに異なる屈折率を有し、かつ、1/4λの倍数の厚さを有する、請求項1に記載の反射電極構造体。
- 前記金属電極が、Al、Ag、Rh、Pd、Cu、Au、Cr、白金、チタン、ニッケル/金合金、クロム/金合金と、銀/アルミニウム混合物、及びこれらの組合せから成るグループより選択される金属を含む、請求項1または2に記載の反射電極構造体。
- 前記金属電極がボンディングパッド構造を有し、
前記金属電極の一部が、ワイヤボンディングのための領域を形成する請求項1〜3のいずれかに記載の反射電極構造体。 - 前記誘電体材料が、多孔性である、請求項1〜4のいずれかに記載の反射電極構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/437,570 | 2006-05-19 | ||
US11/437,570 US7573074B2 (en) | 2006-05-19 | 2006-05-19 | LED electrode |
PCT/US2006/034464 WO2007136392A1 (en) | 2006-05-19 | 2006-08-31 | Low optical loss electrode structures for leds |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014041575A Division JP6033249B2 (ja) | 2006-05-19 | 2014-03-04 | Led用低光学損失電極構造体 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009537982A JP2009537982A (ja) | 2009-10-29 |
JP2009537982A5 JP2009537982A5 (ja) | 2013-08-01 |
JP5713558B2 true JP5713558B2 (ja) | 2015-05-07 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009510935A Active JP5713558B2 (ja) | 2006-05-19 | 2006-08-31 | Led用低光学損失電極構造体 |
JP2014041575A Active JP6033249B2 (ja) | 2006-05-19 | 2014-03-04 | Led用低光学損失電極構造体 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014041575A Active JP6033249B2 (ja) | 2006-05-19 | 2014-03-04 | Led用低光学損失電極構造体 |
Country Status (9)
Country | Link |
---|---|
US (15) | US7573074B2 (ja) |
EP (1) | EP2018671B1 (ja) |
JP (2) | JP5713558B2 (ja) |
KR (2) | KR101008086B1 (ja) |
CN (1) | CN101438423B (ja) |
HK (1) | HK1126894A1 (ja) |
MY (3) | MY142072A (ja) |
SG (1) | SG157361A1 (ja) |
WO (1) | WO2007136392A1 (ja) |
Families Citing this family (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7737455B2 (en) * | 2006-05-19 | 2010-06-15 | Bridgelux, Inc. | Electrode structures for LEDs with increased active area |
US7573074B2 (en) | 2006-05-19 | 2009-08-11 | Bridgelux, Inc. | LED electrode |
DE102007032555A1 (de) * | 2007-07-12 | 2009-01-15 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
US8237183B2 (en) * | 2007-08-16 | 2012-08-07 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
US7915629B2 (en) | 2008-12-08 | 2011-03-29 | Cree, Inc. | Composite high reflectivity layer |
US8368100B2 (en) | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
US9461201B2 (en) | 2007-11-14 | 2016-10-04 | Cree, Inc. | Light emitting diode dielectric mirror |
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