JP5713542B2 - 源ガスから発生したプラズマで製品を処理する装置 - Google Patents

源ガスから発生したプラズマで製品を処理する装置 Download PDF

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Publication number
JP5713542B2
JP5713542B2 JP2009121573A JP2009121573A JP5713542B2 JP 5713542 B2 JP5713542 B2 JP 5713542B2 JP 2009121573 A JP2009121573 A JP 2009121573A JP 2009121573 A JP2009121573 A JP 2009121573A JP 5713542 B2 JP5713542 B2 JP 5713542B2
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Prior art keywords
electrodes
outer periphery
gas distribution
electrode
source gas
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Expired - Fee Related
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JP2009121573A
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Japanese (ja)
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JP2009295580A (ja
JP2009295580A5 (enExample
Inventor
ヴィ． ボールデン ザ セカンド トーマス
ヴィ． ボールデン ザ セカンド トーマス
フィエロ ルイス
フィエロ ルイス
ディー． ゲテイ ジェームズ
ディー． ゲテイ ジェームズ
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Nordson Corp
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Nordson Corp
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Publication of JP2009295580A5 publication Critical patent/JP2009295580A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J15/00—Gas-filled discharge tubes with gaseous cathodes, e.g. plasma cathode
    • H01J15/02—Details, e.g. electrode, gas filling, shape of vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
JP2009121573A 2008-05-20 2009-05-20 源ガスから発生したプラズマで製品を処理する装置 Expired - Fee Related JP5713542B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/123,954 US8372238B2 (en) 2008-05-20 2008-05-20 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
US12/123,954 2008-05-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015045390A Division JP6078571B2 (ja) 2008-05-20 2015-03-09 製品を処理する装置

Publications (3)

Publication Number Publication Date
JP2009295580A JP2009295580A (ja) 2009-12-17
JP2009295580A5 JP2009295580A5 (enExample) 2012-07-05
JP5713542B2 true JP5713542B2 (ja) 2015-05-07

Family

ID=41341204

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009121573A Expired - Fee Related JP5713542B2 (ja) 2008-05-20 2009-05-20 源ガスから発生したプラズマで製品を処理する装置
JP2015045390A Expired - Fee Related JP6078571B2 (ja) 2008-05-20 2015-03-09 製品を処理する装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015045390A Expired - Fee Related JP6078571B2 (ja) 2008-05-20 2015-03-09 製品を処理する装置

Country Status (6)

Country Link
US (2) US8372238B2 (enExample)
JP (2) JP5713542B2 (enExample)
KR (2) KR101645191B1 (enExample)
CN (2) CN103474327B (enExample)
SG (2) SG157301A1 (enExample)
TW (1) TWI519212B (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
JP2015146317A (ja) * 2008-05-20 2015-08-13 ノードソン コーポレーションＮｏｒｄｓｏｎ Ｃｏｒｐｏｒａｔｉｏｎ 密封型処理チャンバと電極への内部バスによる電気接続とを備えた多電極プラズマ処理システム

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US8333166B2 (en) 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
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US8597982B2 (en) 2011-10-31 2013-12-03 Nordson Corporation Methods of fabricating electronics assemblies
US9840778B2 (en) 2012-06-01 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma chamber having an upper electrode having controllable valves and a method of using the same
CN102881551B (zh) * 2012-09-12 2015-05-27 珠海宝丰堂电子科技有限公司 具有气流限制机构的等离子体处理系统及其方法
CN103904016A (zh) * 2014-04-04 2014-07-02 株洲南车时代电气股份有限公司 硅片承载装置
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CN108787634A (zh) * 2018-07-19 2018-11-13 深圳市神州天柱科技有限公司 一种等离子清洗机
EP3900495A4 (en) * 2018-12-20 2022-09-21 Mécanique Analytique Inc. ELECTRODE ARRANGEMENTS FOR PLASMA DISCHARGE DEVICES
CN110223904A (zh) * 2019-07-19 2019-09-10 江苏鲁汶仪器有限公司 一种具有法拉第屏蔽装置的等离子体处理系统
US20230011958A1 (en) * 2019-12-04 2023-01-12 Jiangsu Favored Nanotechnology Co., Ltd. Coating equipment
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CN111517117A (zh) * 2020-04-16 2020-08-11 昆山辉跃通信设备有限公司 一种等离子体设备用滑动装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015146317A (ja) * 2008-05-20 2015-08-13 ノードソン コーポレーションＮｏｒｄｓｏｎ Ｃｏｒｐｏｒａｔｉｏｎ 密封型処理チャンバと電極への内部バスによる電気接続とを備えた多電極プラズマ処理システム

Also Published As

Publication number Publication date
CN101587827A (zh) 2009-11-25
TW201004493A (en) 2010-01-16
US10109448B2 (en) 2018-10-23
KR20160095654A (ko) 2016-08-11
TWI519212B (zh) 2016-01-21
SG176502A1 (en) 2011-12-29
US8372238B2 (en) 2013-02-12
JP2015146317A (ja) 2015-08-13
US20130139967A1 (en) 2013-06-06
US20090288773A1 (en) 2009-11-26
CN103474327A (zh) 2013-12-25
KR101645191B1 (ko) 2016-08-12
JP2009295580A (ja) 2009-12-17
KR101695632B1 (ko) 2017-01-13
CN101587827B (zh) 2013-09-04
SG157301A1 (en) 2009-12-29
CN103474327B (zh) 2016-03-16
KR20090121225A (ko) 2009-11-25
JP6078571B2 (ja) 2017-02-08

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