KR101645191B1 - 한정된 처리 체임버들을 구비한 다중 전극 플라즈마 처리 시스템 및 상기 전극을 구비한 내부 버스 전기 접속 - Google Patents

한정된 처리 체임버들을 구비한 다중 전극 플라즈마 처리 시스템 및 상기 전극을 구비한 내부 버스 전기 접속 Download PDF

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KR101645191B1
KR101645191B1 KR1020090043379A KR20090043379A KR101645191B1 KR 101645191 B1 KR101645191 B1 KR 101645191B1 KR 1020090043379 A KR1020090043379 A KR 1020090043379A KR 20090043379 A KR20090043379 A KR 20090043379A KR 101645191 B1 KR101645191 B1 KR 101645191B1
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electrodes
gas
plasma
source gas
vacuum chamber
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Korean (ko)
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KR20090121225A (ko
Inventor
2세 토마스 브이. 볼덴
루이스 피에로
제임스 디. 케티
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노드슨 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J15/00—Gas-filled discharge tubes with gaseous cathodes, e.g. plasma cathode
    • H01J15/02—Details, e.g. electrode, gas filling, shape of vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
KR1020090043379A 2008-05-20 2009-05-19 한정된 처리 체임버들을 구비한 다중 전극 플라즈마 처리 시스템 및 상기 전극을 구비한 내부 버스 전기 접속 Expired - Fee Related KR101645191B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/123,954 US8372238B2 (en) 2008-05-20 2008-05-20 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
US12/123,954 2008-05-20

Related Child Applications (1)

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KR1020160096261A Division KR101695632B1 (ko) 2008-05-20 2016-07-28 한정된 처리 체임버들을 구비한 다중 전극 플라스마 처리 시스템 및 상기 전극을 구비한 내부 버스 전기 접속

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KR20090121225A KR20090121225A (ko) 2009-11-25
KR101645191B1 true KR101645191B1 (ko) 2016-08-12

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KR1020090043379A Expired - Fee Related KR101645191B1 (ko) 2008-05-20 2009-05-19 한정된 처리 체임버들을 구비한 다중 전극 플라즈마 처리 시스템 및 상기 전극을 구비한 내부 버스 전기 접속
KR1020160096261A Expired - Fee Related KR101695632B1 (ko) 2008-05-20 2016-07-28 한정된 처리 체임버들을 구비한 다중 전극 플라스마 처리 시스템 및 상기 전극을 구비한 내부 버스 전기 접속

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US (2) US8372238B2 (enExample)
JP (2) JP5713542B2 (enExample)
KR (2) KR101645191B1 (enExample)
CN (2) CN103474327B (enExample)
SG (2) SG157301A1 (enExample)
TW (1) TWI519212B (enExample)

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CN103904016A (zh) * 2014-04-04 2014-07-02 株洲南车时代电气股份有限公司 硅片承载装置
US10593515B2 (en) * 2015-06-23 2020-03-17 Aurora Labs Limited Plasma driven particle propagation apparatus and pumping method
USD836212S1 (en) * 2015-08-14 2018-12-18 Christof-Herbert Diener Vacuum device
US11374184B2 (en) 2016-09-08 2022-06-28 Boe Technology Group Co., Ltd. Flexible substrate and fabrication method thereof, and flexible display apparatus
TWI800505B (zh) * 2017-04-24 2023-05-01 美商應用材料股份有限公司 對電漿反應器的電極施加功率
CN108787634A (zh) * 2018-07-19 2018-11-13 深圳市神州天柱科技有限公司 一种等离子清洗机
EP3900495A4 (en) * 2018-12-20 2022-09-21 Mécanique Analytique Inc. ELECTRODE ARRANGEMENTS FOR PLASMA DISCHARGE DEVICES
CN110223904A (zh) * 2019-07-19 2019-09-10 江苏鲁汶仪器有限公司 一种具有法拉第屏蔽装置的等离子体处理系统
US20230011958A1 (en) * 2019-12-04 2023-01-12 Jiangsu Favored Nanotechnology Co., Ltd. Coating equipment
US20230018842A1 (en) * 2020-01-09 2023-01-19 Nordson Corporation Workpiece support system for plasma treatment and method of using the same
CN111517117A (zh) * 2020-04-16 2020-08-11 昆山辉跃通信设备有限公司 一种等离子体设备用滑动装置

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JP2008019470A (ja) * 2006-07-12 2008-01-31 Fuji Electric Holdings Co Ltd プラズマ処理装置の給電構造

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Also Published As

Publication number Publication date
CN101587827A (zh) 2009-11-25
TW201004493A (en) 2010-01-16
US10109448B2 (en) 2018-10-23
KR20160095654A (ko) 2016-08-11
TWI519212B (zh) 2016-01-21
SG176502A1 (en) 2011-12-29
US8372238B2 (en) 2013-02-12
JP2015146317A (ja) 2015-08-13
US20130139967A1 (en) 2013-06-06
US20090288773A1 (en) 2009-11-26
CN103474327A (zh) 2013-12-25
JP2009295580A (ja) 2009-12-17
KR101695632B1 (ko) 2017-01-13
CN101587827B (zh) 2013-09-04
SG157301A1 (en) 2009-12-29
CN103474327B (zh) 2016-03-16
KR20090121225A (ko) 2009-11-25
JP6078571B2 (ja) 2017-02-08
JP5713542B2 (ja) 2015-05-07

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