CN103474327B - 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接 - Google Patents

具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接 Download PDF

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Publication number
CN103474327B
CN103474327B CN201310337212.4A CN201310337212A CN103474327B CN 103474327 B CN103474327 B CN 103474327B CN 201310337212 A CN201310337212 A CN 201310337212A CN 103474327 B CN103474327 B CN 103474327B
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China
Prior art keywords
electrode
electrodes
process chamber
product
plasma
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Expired - Fee Related
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CN201310337212.4A
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English (en)
Chinese (zh)
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CN103474327A (zh
Inventor
托马斯·V·博尔登二世
路易斯·费耶罗
詹姆士·D·格蒂
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Nordson Corp
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Nordson Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J15/00—Gas-filled discharge tubes with gaseous cathodes, e.g. plasma cathode
    • H01J15/02—Details, e.g. electrode, gas filling, shape of vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
CN201310337212.4A 2008-05-20 2009-05-20 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接 Expired - Fee Related CN103474327B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/123,954 US8372238B2 (en) 2008-05-20 2008-05-20 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
US12/123,954 2008-05-20
CN2009101411058A CN101587827B (zh) 2008-05-20 2009-05-20 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接

Related Parent Applications (1)

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CN2009101411058A Division CN101587827B (zh) 2008-05-20 2009-05-20 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接

Publications (2)

Publication Number Publication Date
CN103474327A CN103474327A (zh) 2013-12-25
CN103474327B true CN103474327B (zh) 2016-03-16

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Family Applications (2)

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CN201310337212.4A Expired - Fee Related CN103474327B (zh) 2008-05-20 2009-05-20 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接
CN2009101411058A Expired - Fee Related CN101587827B (zh) 2008-05-20 2009-05-20 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接

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Country Status (6)

Country Link
US (2) US8372238B2 (enExample)
JP (2) JP5713542B2 (enExample)
KR (2) KR101645191B1 (enExample)
CN (2) CN103474327B (enExample)
SG (2) SG157301A1 (enExample)
TW (1) TWI519212B (enExample)

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US8796075B2 (en) 2011-01-11 2014-08-05 Nordson Corporation Methods for vacuum assisted underfilling
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US8333166B2 (en) 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
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US9840778B2 (en) 2012-06-01 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma chamber having an upper electrode having controllable valves and a method of using the same
CN102881551B (zh) * 2012-09-12 2015-05-27 珠海宝丰堂电子科技有限公司 具有气流限制机构的等离子体处理系统及其方法
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US10593515B2 (en) * 2015-06-23 2020-03-17 Aurora Labs Limited Plasma driven particle propagation apparatus and pumping method
USD836212S1 (en) * 2015-08-14 2018-12-18 Christof-Herbert Diener Vacuum device
US11374184B2 (en) 2016-09-08 2022-06-28 Boe Technology Group Co., Ltd. Flexible substrate and fabrication method thereof, and flexible display apparatus
TWI800505B (zh) * 2017-04-24 2023-05-01 美商應用材料股份有限公司 對電漿反應器的電極施加功率
CN108787634A (zh) * 2018-07-19 2018-11-13 深圳市神州天柱科技有限公司 一种等离子清洗机
EP3900495A4 (en) * 2018-12-20 2022-09-21 Mécanique Analytique Inc. ELECTRODE ARRANGEMENTS FOR PLASMA DISCHARGE DEVICES
CN110223904A (zh) * 2019-07-19 2019-09-10 江苏鲁汶仪器有限公司 一种具有法拉第屏蔽装置的等离子体处理系统
US20230011958A1 (en) * 2019-12-04 2023-01-12 Jiangsu Favored Nanotechnology Co., Ltd. Coating equipment
US20230018842A1 (en) * 2020-01-09 2023-01-19 Nordson Corporation Workpiece support system for plasma treatment and method of using the same
CN111517117A (zh) * 2020-04-16 2020-08-11 昆山辉跃通信设备有限公司 一种等离子体设备用滑动装置

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CN101587827B (zh) * 2008-05-20 2013-09-04 诺信公司 具有被限制的处理室的多电极等离子体处理系统和与该电极的内部连接的电连接

Also Published As

Publication number Publication date
CN101587827A (zh) 2009-11-25
TW201004493A (en) 2010-01-16
US10109448B2 (en) 2018-10-23
KR20160095654A (ko) 2016-08-11
TWI519212B (zh) 2016-01-21
SG176502A1 (en) 2011-12-29
US8372238B2 (en) 2013-02-12
JP2015146317A (ja) 2015-08-13
US20130139967A1 (en) 2013-06-06
US20090288773A1 (en) 2009-11-26
CN103474327A (zh) 2013-12-25
KR101645191B1 (ko) 2016-08-12
JP2009295580A (ja) 2009-12-17
KR101695632B1 (ko) 2017-01-13
CN101587827B (zh) 2013-09-04
SG157301A1 (en) 2009-12-29
KR20090121225A (ko) 2009-11-25
JP6078571B2 (ja) 2017-02-08
JP5713542B2 (ja) 2015-05-07

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