SG157301A1 - Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes - Google Patents

Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes

Info

Publication number
SG157301A1
SG157301A1 SG200903198-0A SG2009031980A SG157301A1 SG 157301 A1 SG157301 A1 SG 157301A1 SG 2009031980 A SG2009031980 A SG 2009031980A SG 157301 A1 SG157301 A1 SG 157301A1
Authority
SG
Singapore
Prior art keywords
electrodes
gas
interior
adjacent pair
plasma processing
Prior art date
Application number
SG200903198-0A
Other languages
English (en)
Inventor
Thomas V Bolden Ii
Louis Fierro
James D Getty
Original Assignee
Nordson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordson Corp filed Critical Nordson Corp
Publication of SG157301A1 publication Critical patent/SG157301A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J15/00—Gas-filled discharge tubes with gaseous cathodes, e.g. plasma cathode
    • H01J15/02—Details, e.g. electrode, gas filling, shape of vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
SG200903198-0A 2008-05-20 2009-05-07 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes SG157301A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/123,954 US8372238B2 (en) 2008-05-20 2008-05-20 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes

Publications (1)

Publication Number Publication Date
SG157301A1 true SG157301A1 (en) 2009-12-29

Family

ID=41341204

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200903198-0A SG157301A1 (en) 2008-05-20 2009-05-07 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
SG2011085818A SG176502A1 (en) 2008-05-20 2009-05-07 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2011085818A SG176502A1 (en) 2008-05-20 2009-05-07 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes

Country Status (6)

Country Link
US (2) US8372238B2 (enExample)
JP (2) JP5713542B2 (enExample)
KR (2) KR101645191B1 (enExample)
CN (2) CN103474327B (enExample)
SG (2) SG157301A1 (enExample)
TW (1) TWI519212B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8372238B2 (en) * 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
KR20120002795A (ko) * 2010-07-01 2012-01-09 주성엔지니어링(주) 피딩라인의 차폐수단을 가지는 전원공급수단 및 이를 포함한 기판처리장치
TW201226296A (en) * 2010-12-22 2012-07-01 Metal Ind Res & Dev Ct Continuous feeder apparatus applied in vacuum process
US8796075B2 (en) 2011-01-11 2014-08-05 Nordson Corporation Methods for vacuum assisted underfilling
CN102652946A (zh) * 2011-03-04 2012-09-05 富葵精密组件(深圳)有限公司 等离子清洁装置及等离子清洁方法
US8333166B2 (en) 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
EP2755716B1 (en) * 2011-09-15 2020-04-15 Cold Plasma Medical Technologies, Inc. Unipolar cold plasma device and associated method
US8597982B2 (en) 2011-10-31 2013-12-03 Nordson Corporation Methods of fabricating electronics assemblies
US9840778B2 (en) 2012-06-01 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma chamber having an upper electrode having controllable valves and a method of using the same
CN102881551B (zh) * 2012-09-12 2015-05-27 珠海宝丰堂电子科技有限公司 具有气流限制机构的等离子体处理系统及其方法
CN103904016A (zh) * 2014-04-04 2014-07-02 株洲南车时代电气股份有限公司 硅片承载装置
US10593515B2 (en) * 2015-06-23 2020-03-17 Aurora Labs Limited Plasma driven particle propagation apparatus and pumping method
USD836212S1 (en) * 2015-08-14 2018-12-18 Christof-Herbert Diener Vacuum device
US11374184B2 (en) 2016-09-08 2022-06-28 Boe Technology Group Co., Ltd. Flexible substrate and fabrication method thereof, and flexible display apparatus
TWI800505B (zh) * 2017-04-24 2023-05-01 美商應用材料股份有限公司 對電漿反應器的電極施加功率
CN108787634A (zh) * 2018-07-19 2018-11-13 深圳市神州天柱科技有限公司 一种等离子清洗机
EP3900495A4 (en) * 2018-12-20 2022-09-21 Mécanique Analytique Inc. ELECTRODE ARRANGEMENTS FOR PLASMA DISCHARGE DEVICES
CN110223904A (zh) * 2019-07-19 2019-09-10 江苏鲁汶仪器有限公司 一种具有法拉第屏蔽装置的等离子体处理系统
US20230011958A1 (en) * 2019-12-04 2023-01-12 Jiangsu Favored Nanotechnology Co., Ltd. Coating equipment
US20230018842A1 (en) * 2020-01-09 2023-01-19 Nordson Corporation Workpiece support system for plasma treatment and method of using the same
CN111517117A (zh) * 2020-04-16 2020-08-11 昆山辉跃通信设备有限公司 一种等离子体设备用滑动装置

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264393A (en) 1977-10-31 1981-04-28 Motorola, Inc. Reactor apparatus for plasma etching or deposition
US4223048A (en) 1978-08-07 1980-09-16 Pacific Western Systems Plasma enhanced chemical vapor processing of semiconductive wafers
US4328081A (en) 1980-02-25 1982-05-04 Micro-Plate, Inc. Plasma desmearing apparatus and method
US4282077A (en) 1980-07-03 1981-08-04 General Dynamics, Pomona Division Uniform plasma etching system
US4425210A (en) 1980-11-04 1984-01-10 Fazlin Fazal A Plasma desmearing apparatus and method
DD156715A1 (de) 1981-03-05 1982-09-15 Heinz Rumberg Einrichtung zur beidseitigen beschichtung ebener substrate
US4863577A (en) 1982-05-28 1989-09-05 Advanced Plasma Systems, Inc. Desmearing and plated-through-hole method
US4806225A (en) 1982-05-28 1989-02-21 Advanced Plasma Systems, Inc. Desmearing and plated-through-hole apparatus
US4474659A (en) 1982-05-28 1984-10-02 Fazal Fazlin Plated-through-hole method
JPS60123032A (ja) 1983-12-07 1985-07-01 Dainamitsuku Internatl Kk プラズマ処理方法および装置
US4623441A (en) 1984-08-15 1986-11-18 Advanced Plasma Systems Inc. Paired electrodes for plasma chambers
US4681649A (en) 1985-04-15 1987-07-21 Fazlin Fazal A Multi-layer printed circuit board vacuum lamination method
US4689105A (en) 1985-04-15 1987-08-25 Advanced Plasma Systems Inc. Multi-layer printed circuit board lamination apparatus
US4859271A (en) 1985-04-15 1989-08-22 Advanced Plasma Systems, Inc. Lamination apparatus having multiple book platens
US4780174A (en) * 1986-12-05 1988-10-25 Lan Shan Ming Dislocation-free epitaxial growth in radio-frequency heating reactor
JPS63247373A (ja) 1987-03-31 1988-10-14 Kanegafuchi Chem Ind Co Ltd 薄膜形成方法及び装置
US5041201A (en) 1988-09-16 1991-08-20 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
EP0428161B1 (en) 1989-11-15 1999-02-17 Kokusai Electric Co., Ltd. Dry process system
US5280156A (en) 1990-12-25 1994-01-18 Ngk Insulators, Ltd. Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means
EP0510912B1 (en) 1991-04-24 1998-01-07 Morinaga Milk Industry Co., Ltd. Antimicrobial peptide and antimicrobial agent
JPH05209279A (ja) * 1991-10-29 1993-08-20 Canon Inc 金属膜形成装置および金属膜形成法
JP3049932B2 (ja) 1992-03-31 2000-06-05 株式会社島津製作所 プラズマｃｖｄ装置
JP3171762B2 (ja) 1994-11-17 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置
US6009890A (en) 1997-01-21 2000-01-04 Tokyo Electron Limited Substrate transporting and processing system
US6321680B2 (en) 1997-08-11 2001-11-27 Torrex Equipment Corporation Vertical plasma enhanced process apparatus and method
KR100557579B1 (ko) * 1997-11-05 2006-05-03 에스케이 주식회사 박막제조장치
WO2000032841A1 (en) * 1998-12-01 2000-06-08 Sk Corporation Apparatus for forming thin film
TW507256B (en) * 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
US20030048591A1 (en) * 2001-09-10 2003-03-13 Saturn Vac Co., Ltd. Desmearing process/apparatus for pulse-type D.C. plasma
TW544071U (en) 2002-04-02 2003-07-21 Nano Electronics And Micro Sys Electrode device for plasma treatment system
US7013834B2 (en) 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
CN1875454A (zh) 2003-10-28 2006-12-06 诺信公司 等离子处理系统和等离子处理工艺
JP2006165093A (ja) 2004-12-03 2006-06-22 Tokyo Electron Ltd プラズマ処理装置
JP4584722B2 (ja) * 2005-01-13 2010-11-24 シャープ株式会社 プラズマ処理装置および同装置により製造された半導体素子
CN1874545A (zh) 2006-06-23 2006-12-06 王晓琦 一种在手持终端信息群发中加入接受者称呼的方法
JP4788504B2 (ja) * 2006-07-12 2011-10-05 富士電機株式会社 プラズマ処理装置の給電構造
US20080296261A1 (en) 2007-06-01 2008-12-04 Nordson Corporation Apparatus and methods for improving treatment uniformity in a plasma process
US8372238B2 (en) * 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
US8333166B2 (en) * 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
WO2014064779A1 (ja) * 2012-10-24 2014-05-01 株式会社Ｊｃｕ プラズマ処理装置及び方法

Also Published As

Publication number Publication date
CN101587827A (zh) 2009-11-25
TW201004493A (en) 2010-01-16
US10109448B2 (en) 2018-10-23
KR20160095654A (ko) 2016-08-11
TWI519212B (zh) 2016-01-21
SG176502A1 (en) 2011-12-29
US8372238B2 (en) 2013-02-12
JP2015146317A (ja) 2015-08-13
US20130139967A1 (en) 2013-06-06
US20090288773A1 (en) 2009-11-26
CN103474327A (zh) 2013-12-25
KR101645191B1 (ko) 2016-08-12
JP2009295580A (ja) 2009-12-17
KR101695632B1 (ko) 2017-01-13
CN101587827B (zh) 2013-09-04
CN103474327B (zh) 2016-03-16
KR20090121225A (ko) 2009-11-25
JP6078571B2 (ja) 2017-02-08
JP5713542B2 (ja) 2015-05-07

Similar Documents

Publication Publication Date Title
JP2009295580A5 (enExample)
US8747610B2 (en) Plasma source pumping and gas injection baffle
WO2011006018A3 (en) Apparatus and method for plasma processing
WO2010129398A3 (en) Multi-feed rf distribution systems and methods
JP6272298B2 (ja) マイクロ波プラズマ生成装置およびこれを作動させる方法
JP2012525672A5 (enExample)
MY151853A (en) Furnace atmosphere activation method and apparatus
CN102017057A (zh) 用于基板的等离子体辅助处理的等离子体处理装置和方法
JP2010541167A5 (enExample)
WO2012112611A3 (en) Amperometric sensor system
JP2010538456A5 (enExample)
TW201614710A (en) Plasma uniformity control by arrays of unit cell plasmas
GB2546450A (en) A non-equilibrium plasma system and method of refining syngas
WO2011038344A3 (en) Unitized confinement ring arrangements and methods thereof
WO2014092394A1 (ko) 분말 플라즈마 처리 장치
CN107979907B (zh) 大气压介质阻挡放电增强型直流交替电极低温等离子体射流阵列
CN106793435A (zh) 一种用于工业废气处理的放电等离子体发生装置
CN102881551B (zh) 具有气流限制机构的等离子体处理系统及其方法
KR101664541B1 (ko) 저온 상압 플라즈마 제트 장치
MY176134A (en) Apparatus and method for the plasma coating of a substrate, in particular a press platen
JP2011065898A5 (enExample)
WO2009051834A3 (en) System, method and apparatus for creating an electric glow discharge
WO2009104919A3 (en) Apparatus and method for processing substrate
CN103111168A (zh) 大风量低浓度等离子体废气处理装置
WO2019135519A1 (ko) 플라즈마를 이용한 식품 살균 장치