JP2010538456A5 - - Google Patents

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Publication number
JP2010538456A5
JP2010538456A5 JP2010522903A JP2010522903A JP2010538456A5 JP 2010538456 A5 JP2010538456 A5 JP 2010538456A5 JP 2010522903 A JP2010522903 A JP 2010522903A JP 2010522903 A JP2010522903 A JP 2010522903A JP 2010538456 A5 JP2010538456 A5 JP 2010538456A5
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JP
Japan
Prior art keywords
space
passage
gas
extreme ultraviolet
flow
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Application number
JP2010522903A
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English (en)
Japanese (ja)
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JP5301545B2 (ja
JP2010538456A (ja
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Publication date
Priority claimed from US11/897,644 external-priority patent/US7655925B2/en
Priority claimed from US12/002,073 external-priority patent/US7812329B2/en
Application filed filed Critical
Priority claimed from PCT/US2008/009755 external-priority patent/WO2009032055A1/en
Publication of JP2010538456A publication Critical patent/JP2010538456A/ja
Publication of JP2010538456A5 publication Critical patent/JP2010538456A5/ja
Application granted granted Critical
Publication of JP5301545B2 publication Critical patent/JP5301545B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010522903A 2007-08-31 2008-08-15 極紫外線（ｅｕｖ）フォトリソグラフィ装置のチャンバ間のガス流を管理するシステム Expired - Fee Related JP5301545B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/897,644 US7655925B2 (en) 2007-08-31 2007-08-31 Gas management system for a laser-produced-plasma EUV light source
US11/897,644 2007-08-31
US12/002,073 US7812329B2 (en) 2007-12-14 2007-12-14 System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
US12/002,073 2007-12-14
PCT/US2008/009755 WO2009032055A1 (en) 2007-08-31 2008-08-15 System managing gas flow between chambers of an extreme ultraviolet (euv) photolithography apparatus

Publications (3)

Publication Number Publication Date
JP2010538456A JP2010538456A (ja) 2010-12-09
JP2010538456A5 true JP2010538456A5 (enExample) 2011-09-22
JP5301545B2 JP5301545B2 (ja) 2013-09-25

Family

ID=40429167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010522903A Expired - Fee Related JP5301545B2 (ja) 2007-08-31 2008-08-15 極紫外線（ｅｕｖ）フォトリソグラフィ装置のチャンバ間のガス流を管理するシステム

Country Status (6)

Country Link
EP (1) EP2181449B1 (enExample)
JP (1) JP5301545B2 (enExample)
KR (1) KR101503897B1 (enExample)
CN (1) CN101790763B (enExample)
TW (1) TWI402628B (enExample)
WO (1) WO2009032055A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8115900B2 (en) * 2007-09-17 2012-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102008049494A1 (de) * 2008-09-27 2010-04-08 Xtreme Technologies Gmbh Verfahren und Anordnung zum Betreiben von plasmabasierten kurzwelligen Strahlungsquellen
US8138487B2 (en) * 2009-04-09 2012-03-20 Cymer, Inc. System, method and apparatus for droplet catcher for prevention of backsplash in a EUV generation chamber
NL2004706A (nl) * 2009-07-22 2011-01-25 Asml Netherlands Bv Radiation source.
US9091944B2 (en) 2009-09-25 2015-07-28 Asml Netherlands B.V. Source collector, lithographic apparatus and device manufacturing method
JP5758153B2 (ja) 2010-03-12 2015-08-05 エーエスエムエル ネザーランズ ビー．ブイ． 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法
JP5732525B2 (ja) * 2010-04-22 2015-06-10 エーエスエムエル ネザーランズ ビー．ブイ． コレクタミラーアセンブリおよび極端紫外線放射の生成方法
US8575576B2 (en) * 2011-02-14 2013-11-05 Kla-Tencor Corporation Optical imaging system with laser droplet plasma illuminator
US8633459B2 (en) * 2011-03-02 2014-01-21 Cymer, Llc Systems and methods for optics cleaning in an EUV light source
DE102011005778A1 (de) 2011-03-18 2012-09-20 Carl Zeiss Smt Gmbh Optisches Element
JP6034598B2 (ja) * 2012-05-31 2016-11-30 ギガフォトン株式会社 Ｅｕｖ光生成装置の洗浄方法
CN104937494B (zh) * 2012-12-17 2017-09-26 Asml荷兰有限公司 用于光刻设备的衬底支撑件和光刻设备
KR102115543B1 (ko) 2013-04-26 2020-05-26 삼성전자주식회사 극자외선 광원 장치
DE102013226678A1 (de) * 2013-12-19 2015-06-25 Carl Zeiss Smt Gmbh EUV-Lithographiesystem und Transporteinrichtung zum Transport eines reflektiven optischen Elements
DE102014114572A1 (de) * 2014-10-08 2016-04-14 Asml Netherlands B.V. EUV-Lithographiesystem und Betriebsverfahren dafür
DE102014222674B3 (de) * 2014-11-06 2016-05-25 Carl Zeiss Smt Gmbh EUV-Lithographiesystem
KR102709126B1 (ko) 2015-12-17 2024-09-23 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치, 극자외선 소스 및 리소그래피 장치를 위한 액적 생성기
JP6895538B2 (ja) * 2017-11-16 2021-06-30 ギガフォトン株式会社 極端紫外光生成装置及び電子デバイスの製造方法
KR102524267B1 (ko) * 2018-09-12 2023-04-20 사이머 엘엘씨 가스 방전 스테이지의 바디의 계측
NL2024042A (en) 2018-10-22 2020-05-07 Asml Netherlands Bv Apparatus for and method of reducing contamination from source material in an euv light source
EP4094125A1 (en) 2020-01-23 2022-11-30 ASML Holding N.V. Lithographic system provided with a deflection apparatus for changing a trajectory of particulate debris
JP7467174B2 (ja) 2020-03-16 2024-04-15 ギガフォトン株式会社 チャンバ装置、極端紫外光生成装置、及び電子デバイスの製造方法
TWI913279B (zh) 2020-06-29 2026-02-01 荷蘭商Ａｓｍｌ荷蘭公司 在euv源之液滴產生器中加速液滴之方法及其設備
US11573495B2 (en) 2021-03-04 2023-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Control of dynamic gas lock flow inlets of an intermediate focus cap
US12158576B2 (en) 2021-05-28 2024-12-03 Kla Corporation Counterflow gas nozzle for contamination mitigation in extreme ultraviolet inspection systems
US11978620B2 (en) * 2021-08-12 2024-05-07 Kla Corporation Swirler for laser-sustained plasma light source with reverse vortex flow
CN121533141A (zh) * 2023-07-19 2026-02-13 Asml荷兰有限公司 Euv源容器加热气体传递装置和方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815700B2 (en) * 1997-05-12 2004-11-09 Cymer, Inc. Plasma focus light source with improved pulse power system
US6452199B1 (en) * 1997-05-12 2002-09-17 Cymer, Inc. Plasma focus high energy photon source with blast shield
US6614505B2 (en) * 2001-01-10 2003-09-02 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
KR20030076238A (ko) * 2001-04-17 2003-09-26 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 극자외선 투과 계면 구조체 및 극자외선 리소그래피 투사장치
US20040023253A1 (en) * 2001-06-11 2004-02-05 Sandeep Kunwar Device structure for closely spaced electrodes
JP3703447B2 (ja) * 2002-09-06 2005-10-05 キヤノン株式会社 差動排気システム及び露光装置
US6770895B2 (en) * 2002-11-21 2004-08-03 Asml Holding N.V. Method and apparatus for isolating light source gas from main chamber gas in a lithography tool
US6919573B2 (en) * 2003-03-20 2005-07-19 Asml Holding N.V Method and apparatus for recycling gases used in a lithography tool
US7164144B2 (en) * 2004-03-10 2007-01-16 Cymer Inc. EUV light source
JP4578901B2 (ja) * 2004-09-09 2010-11-10 株式会社小松製作所 極端紫外光源装置
DE102005020521B4 (de) * 2005-04-29 2013-05-02 Xtreme Technologies Gmbh Verfahren und Anordnung zur Unterdrückung von Debris bei der Erzeugung kurzwelliger Strahlung auf Basis eines Plasmas
JP4710463B2 (ja) * 2005-07-21 2011-06-29 ウシオ電機株式会社 極端紫外光発生装置
DE102005048670B3 (de) * 2005-10-07 2007-05-24 Xtreme Technologies Gmbh Anordnung zur Unterdrückung von unerwünschten Spektralanteilen bei einer plasmabasierten EUV-Strahlungsquelle

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