KR101503897B1 - 극자외선(ｅｕｖ) 포토리소그래피 장치의 챔버간 가스 흐름을 관리하는 시스템 - Google Patents

극자외선(ｅｕｖ) 포토리소그래피 장치의 챔버간 가스 흐름을 관리하는 시스템 Download PDF

Info

Publication number
KR101503897B1
KR101503897B1 KR1020107005465A KR20107005465A KR101503897B1 KR 101503897 B1 KR101503897 B1 KR 101503897B1 KR 1020107005465 A KR1020107005465 A KR 1020107005465A KR 20107005465 A KR20107005465 A KR 20107005465A KR 101503897 B1 KR101503897 B1 KR 101503897B1
Authority
KR
South Korea
Prior art keywords
gas
chamber
flow
space
open end
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020107005465A
Other languages
English (en)
Korean (ko)
Other versions
KR20100057037A (ko
Inventor
알렉산더 엔. 비카노프
데이비드 씨. 브랜트
아이고르 씨. 포멘코프
윌리엄 엔. 파틀로
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/897,644 external-priority patent/US7655925B2/en
Priority claimed from US12/002,073 external-priority patent/US7812329B2/en
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20100057037A publication Critical patent/KR20100057037A/ko
Application granted granted Critical
Publication of KR101503897B1 publication Critical patent/KR101503897B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus

Landscapes

  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Plasma & Fusion (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020107005465A 2007-08-31 2008-08-15 극자외선(ｅｕｖ) 포토리소그래피 장치의 챔버간 가스 흐름을 관리하는 시스템 Expired - Fee Related KR101503897B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/897,644 2007-08-31
US11/897,644 US7655925B2 (en) 2007-08-31 2007-08-31 Gas management system for a laser-produced-plasma EUV light source
US12/002,073 2007-12-14
US12/002,073 US7812329B2 (en) 2007-12-14 2007-12-14 System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
PCT/US2008/009755 WO2009032055A1 (en) 2007-08-31 2008-08-15 System managing gas flow between chambers of an extreme ultraviolet (euv) photolithography apparatus

Publications (2)

Publication Number Publication Date
KR20100057037A KR20100057037A (ko) 2010-05-28
KR101503897B1 true KR101503897B1 (ko) 2015-03-24

Family

ID=40429167

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107005465A Expired - Fee Related KR101503897B1 (ko) 2007-08-31 2008-08-15 극자외선(ｅｕｖ) 포토리소그래피 장치의 챔버간 가스 흐름을 관리하는 시스템

Country Status (6)

Country Link
EP (1) EP2181449B1 (enExample)
JP (1) JP5301545B2 (enExample)
KR (1) KR101503897B1 (enExample)
CN (1) CN101790763B (enExample)
TW (1) TWI402628B (enExample)
WO (1) WO2009032055A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8115900B2 (en) 2007-09-17 2012-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102008049494A1 (de) * 2008-09-27 2010-04-08 Xtreme Technologies Gmbh Verfahren und Anordnung zum Betreiben von plasmabasierten kurzwelligen Strahlungsquellen
US8138487B2 (en) * 2009-04-09 2012-03-20 Cymer, Inc. System, method and apparatus for droplet catcher for prevention of backsplash in a EUV generation chamber
NL2004706A (nl) * 2009-07-22 2011-01-25 Asml Netherlands Bv Radiation source.
WO2011036248A1 (en) * 2009-09-25 2011-03-31 Asml Netherlands B.V. Source collector apparatus, lithographic apparatus and device manufacturing method
JP5758153B2 (ja) 2010-03-12 2015-08-05 エーエスエムエル ネザーランズ ビー．ブイ． 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法
KR101819053B1 (ko) * 2010-04-22 2018-01-16 에이에스엠엘 네델란즈 비.브이. 극자외 방사선을 생성하는 컬렉터 거울 조립체 및 방법
US8575576B2 (en) * 2011-02-14 2013-11-05 Kla-Tencor Corporation Optical imaging system with laser droplet plasma illuminator
US8633459B2 (en) * 2011-03-02 2014-01-21 Cymer, Llc Systems and methods for optics cleaning in an EUV light source
DE102011005778A1 (de) * 2011-03-18 2012-09-20 Carl Zeiss Smt Gmbh Optisches Element
JP6034598B2 (ja) 2012-05-31 2016-11-30 ギガフォトン株式会社 Ｅｕｖ光生成装置の洗浄方法
CN104937494B (zh) * 2012-12-17 2017-09-26 Asml荷兰有限公司 用于光刻设备的衬底支撑件和光刻设备
KR102115543B1 (ko) 2013-04-26 2020-05-26 삼성전자주식회사 극자외선 광원 장치
DE102013226678A1 (de) * 2013-12-19 2015-06-25 Carl Zeiss Smt Gmbh EUV-Lithographiesystem und Transporteinrichtung zum Transport eines reflektiven optischen Elements
DE102014114572A1 (de) * 2014-10-08 2016-04-14 Asml Netherlands B.V. EUV-Lithographiesystem und Betriebsverfahren dafür
DE102014222674B3 (de) * 2014-11-06 2016-05-25 Carl Zeiss Smt Gmbh EUV-Lithographiesystem
NL2018004A (en) 2015-12-17 2017-06-26 Asml Netherlands Bv Droplet generator for lithographic apparatus, euv source and lithographic apparatus
JP6895538B2 (ja) * 2017-11-16 2021-06-30 ギガフォトン株式会社 極端紫外光生成装置及び電子デバイスの製造方法
US20210194202A1 (en) * 2018-09-12 2021-06-24 Cymer, Llc Metrology for a body of a gas discharge stage
NL2024042A (en) 2018-10-22 2020-05-07 Asml Netherlands Bv Apparatus for and method of reducing contamination from source material in an euv light source
IL294398A (en) 2020-01-23 2022-08-01 Asml Holding Nv A lithographic system provided with a deflection mechanism to change the trajectory of particulate debris
JP7467174B2 (ja) 2020-03-16 2024-04-15 ギガフォトン株式会社 チャンバ装置、極端紫外光生成装置、及び電子デバイスの製造方法
US11573495B2 (en) 2021-03-04 2023-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Control of dynamic gas lock flow inlets of an intermediate focus cap
US12158576B2 (en) * 2021-05-28 2024-12-03 Kla Corporation Counterflow gas nozzle for contamination mitigation in extreme ultraviolet inspection systems
US11978620B2 (en) * 2021-08-12 2024-05-07 Kla Corporation Swirler for laser-sustained plasma light source with reverse vortex flow
WO2025016632A1 (en) * 2023-07-19 2025-01-23 Asml Netherlands B.V. Euv source vessel heated gas delivery apparatus and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007611A (ja) * 2001-01-10 2003-01-10 Asml Netherlands Bv リソグラフィ投影装置、素子製造方法、およびそれによって製造される素子
JP2004289151A (ja) * 2003-03-20 2004-10-14 Asml Holding Nv リソグラフィツールにおいて使用されるガスをリサイクルするための方法及び装置
JP2006319328A (ja) * 2005-04-29 2006-11-24 Xtreme Technologies Gmbh プラズマに基づく短波長放射線の生成におけるデブリの抑制のための方法および装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815700B2 (en) * 1997-05-12 2004-11-09 Cymer, Inc. Plasma focus light source with improved pulse power system
US6452199B1 (en) * 1997-05-12 2002-09-17 Cymer, Inc. Plasma focus high energy photon source with blast shield
EP1381919A1 (en) * 2001-04-17 2004-01-21 Koninklijke Philips Electronics N.V. Euv-transparent interface structure
US20040023253A1 (en) * 2001-06-11 2004-02-05 Sandeep Kunwar Device structure for closely spaced electrodes
JP3703447B2 (ja) * 2002-09-06 2005-10-05 キヤノン株式会社 差動排気システム及び露光装置
US6770895B2 (en) * 2002-11-21 2004-08-03 Asml Holding N.V. Method and apparatus for isolating light source gas from main chamber gas in a lithography tool
US7164144B2 (en) * 2004-03-10 2007-01-16 Cymer Inc. EUV light source
JP4578901B2 (ja) * 2004-09-09 2010-11-10 株式会社小松製作所 極端紫外光源装置
JP4710463B2 (ja) * 2005-07-21 2011-06-29 ウシオ電機株式会社 極端紫外光発生装置
DE102005048670B3 (de) * 2005-10-07 2007-05-24 Xtreme Technologies Gmbh Anordnung zur Unterdrückung von unerwünschten Spektralanteilen bei einer plasmabasierten EUV-Strahlungsquelle

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007611A (ja) * 2001-01-10 2003-01-10 Asml Netherlands Bv リソグラフィ投影装置、素子製造方法、およびそれによって製造される素子
JP2004289151A (ja) * 2003-03-20 2004-10-14 Asml Holding Nv リソグラフィツールにおいて使用されるガスをリサイクルするための方法及び装置
JP2006319328A (ja) * 2005-04-29 2006-11-24 Xtreme Technologies Gmbh プラズマに基づく短波長放射線の生成におけるデブリの抑制のための方法および装置

Also Published As

Publication number Publication date
KR20100057037A (ko) 2010-05-28
TW200915015A (en) 2009-04-01
TWI402628B (zh) 2013-07-21
CN101790763B (zh) 2014-01-15
JP2010538456A (ja) 2010-12-09
CN101790763A (zh) 2010-07-28
EP2181449B1 (en) 2013-05-22
EP2181449A1 (en) 2010-05-05
EP2181449A4 (en) 2012-02-08
JP5301545B2 (ja) 2013-09-25
WO2009032055A1 (en) 2009-03-12

Similar Documents

Publication Publication Date Title
KR101503897B1 (ko) 극자외선(ｅｕｖ) 포토리소그래피 장치의 챔버간 가스 흐름을 관리하는 시스템
US7812329B2 (en) System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
KR101503894B1 (ko) 레이저 생성 플라즈마 ｅｕｖ 광원용 가스 관리 시스템
US11829082B2 (en) Radiation source for lithography process
JP6043789B2 (ja) レーザ生成プラズマ光源内の緩衝ガス流安定化のためのシステム及び方法
KR101703788B1 (ko) 레이저 생성 플라즈마 ｅｕｖ 광원
EP1047288B1 (en) Plasma focus high energy photon source
US9000404B2 (en) Systems and methods for optics cleaning in an EUV light source

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180313

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180313