JP5713050B2 - 固体撮像素子 - Google Patents
固体撮像素子 Download PDFInfo
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- JP5713050B2 JP5713050B2 JP2013115064A JP2013115064A JP5713050B2 JP 5713050 B2 JP5713050 B2 JP 5713050B2 JP 2013115064 A JP2013115064 A JP 2013115064A JP 2013115064 A JP2013115064 A JP 2013115064A JP 5713050 B2 JP5713050 B2 JP 5713050B2
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- 238000012546 transfer Methods 0.000 claims description 81
- 238000003384 imaging method Methods 0.000 claims description 76
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- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 230000008859 change Effects 0.000 claims description 12
- 230000014509 gene expression Effects 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 46
- 238000009792 diffusion process Methods 0.000 description 17
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- 230000035508 accumulation Effects 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 6
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- 230000002093 peripheral effect Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 230000001629 suppression Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
で、CMOSイメージセンサの一種といえる。
Low≦Low1≦Vg1≦Vdd (ただし、Low<Vdd)
なる不等式が成立する電位である。また、上記の期間(4)ではスイッチSW1が図3(I)に示すようにオフ、スイッチSW2が同図(J)に示すようにオン、スイッチsc1が同図(M)に示すようにオン、スイッチsc2が同図(N)に示すようにオフとされる。この結果、MOSFET53のソースに接続されたソースフォロア回路が働き、MOSFET53のソース電位は、図3(L)に示すように期間(4)ではS2(=Vg1−Vth1)となる。ここで、Vth1とはホールがある状態でのMOSFET53のしきい値電圧である。
High1≦Vdd+Vth のとき、Highs'=High1−Vth
High1>Vdd+Vth のとき、Highs'=Vdd
となる。
32 p-型エピタキシャル層
33 nウェル
34 ゲート酸化膜
35 リング状ゲート電極
36 n+型ソース領域
37、83 ソース近傍p型領域
38 n+型ドレイン領域
39、108 埋め込みp-型領域
40、54、117 フォトダイオード
41 転送ゲート電極
42、56、126 ドレイン電極配線
43、59、124 リング状ゲート電極配線
44、64、127 ソース電極配線(出力線)
45、61、125 転送ゲート電極配線
46 遮光膜
47 開口部
51 画素敷き詰め領域
52、115 画素
53、116 リング状ゲートMOSFET
55、118 転送ゲートMOSFET
57 フレームスタート信号発生回路
58、119 垂直シフトレジスタ
60、121 リング状ゲート電位制御回路
62、122 転送ゲート電位制御回路
63、123 ドレイン電位制御回路
65 ソース電位制御回路
66 信号読み出し回路
67 電流源(負荷)
68 差動アンプ
69 水平シフトレジスタ
82、84、101、110 p+型領域
94、95、96 p-型しきい値調整層
102 ゲート電極
103 ゲート電極配線
104 フォトダイオード・リセットMOSFET
105 フォトダイオード・リセット・トランジスタ・ゲート電極制御回路
109 n-型領域
114 n+型非注入領域
120 フォトダイオード・リセット制御回路
SW1、SW2、sc1、sc2 スイッチ
Claims (2)
- 入射光を電荷に変換して蓄積する光電変換領域と、
前記光電変換領域に蓄積された電荷を転送する電荷転送手段と、
前記電荷転送手段により転送された電荷による電位変化をしきい値の変化として信号を出力する信号出力用トランジスタと、
を含む単位画素が規則的に複数配列されており、
前記光電変換領域は、半導体基板上に設けられた第1導電型のウェルに形成されており、
前記信号出力用トランジスタは、
前記第1導電型のウェル上に形成されたリング状ゲート電極と、
前記第1導電型のウェルにおける前記リング状ゲート電極の中央開口部に対応する領域に形成された第1導電型のソース領域と、
前記第1導電型のソース領域の周囲に前記リング状ゲート電極の外周に達しないように前記第1導電型のウェルに接触して形成され、前記光電変換領域から転送された電荷を蓄積する第2導電型のソース近傍領域と、
前記第1導電型のソース領域及び前記第2導電型のソース近傍領域とは離間して形成され、前記第1導電型のウェルに接触する第1導電型のドレイン領域と、
を有し、 前記信号が出力された後の前記第2導電型のソース近傍領域の電荷は、前記リング状ゲート電極及び前記第1導電型のソース領域の電位変化のみにより排出され、かつ、前記第1導電型のドレイン領域の電位をVdd、前記電荷が排出されるときの前記リング状ゲート電極の電位をHigh1、前記電荷が排出されるときの前記第1導電型のソース領域の電位をHighsとしたときに、High1≦Vdd、Highs≦Vddの関係式を満たすことを特徴とする固体撮像素子。 - 前記光電変換領域に蓄積された電荷は、前記第1導電型のウェルのみを介して前記第2導電型のソース近傍領域に転送され、
前記信号が出力された後の前記第2導電型のソース近傍領域の電荷は、前記第1導電型のウェルのみを介して前記半導体基板に排出されることを特徴とする請求項1記載の固体撮像素子。
Priority Applications (1)
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JP2013115064A JP5713050B2 (ja) | 2004-01-29 | 2013-05-31 | 固体撮像素子 |
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JP2004021895 | 2004-01-29 | ||
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JP2004256494 | 2004-09-03 | ||
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JP2013115064A JP5713050B2 (ja) | 2004-01-29 | 2013-05-31 | 固体撮像素子 |
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JP2011160533A Division JP5316605B2 (ja) | 2004-01-29 | 2011-07-22 | 固体撮像素子及びその駆動方法 |
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JP5713050B2 true JP5713050B2 (ja) | 2015-05-07 |
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JP2011160533A Active JP5316605B2 (ja) | 2004-01-29 | 2011-07-22 | 固体撮像素子及びその駆動方法 |
JP2011160534A Active JP5316606B2 (ja) | 2004-01-29 | 2011-07-22 | 固体撮像素子及びその製造方法 |
JP2013115064A Active JP5713050B2 (ja) | 2004-01-29 | 2013-05-31 | 固体撮像素子 |
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JP2011160533A Active JP5316605B2 (ja) | 2004-01-29 | 2011-07-22 | 固体撮像素子及びその駆動方法 |
JP2011160534A Active JP5316606B2 (ja) | 2004-01-29 | 2011-07-22 | 固体撮像素子及びその製造方法 |
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US (2) | US7193257B2 (ja) |
JP (3) | JP5316605B2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE602004025681D1 (de) * | 2004-06-15 | 2010-04-08 | St Microelectronics Res & Dev | Bildsensor |
JP2006294871A (ja) * | 2005-04-11 | 2006-10-26 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
JP2007105236A (ja) * | 2005-10-13 | 2007-04-26 | Victor Co Of Japan Ltd | カプセル型内視鏡装置 |
JP4655898B2 (ja) * | 2005-11-15 | 2011-03-23 | 日本ビクター株式会社 | 固体撮像装置 |
KR100871714B1 (ko) * | 2005-12-05 | 2008-12-05 | 한국전자통신연구원 | 트랜스퍼 트랜지스터 및 이를 구비한 저잡음 이미지 센서 |
JP4561646B2 (ja) * | 2006-01-31 | 2010-10-13 | 日本ビクター株式会社 | 固体撮像装置の駆動方法 |
JP4561651B2 (ja) * | 2006-02-27 | 2010-10-13 | 日本ビクター株式会社 | 固体撮像素子 |
JP4618170B2 (ja) * | 2006-03-15 | 2011-01-26 | 日本ビクター株式会社 | 固体撮像装置 |
JP4870528B2 (ja) * | 2006-11-17 | 2012-02-08 | オリンパス株式会社 | 固体撮像装置 |
JP6146976B2 (ja) * | 2012-09-24 | 2017-06-14 | オリンパス株式会社 | 撮像装置、該撮像装置を備える内視鏡 |
JP7249552B2 (ja) * | 2017-11-30 | 2023-03-31 | パナソニックIpマネジメント株式会社 | 撮像装置 |
US20230123651A1 (en) * | 2020-03-20 | 2023-04-20 | Egis Technology Inc. | Image sensing device |
US11695932B2 (en) * | 2020-09-23 | 2023-07-04 | Nokia Technologies Oy | Temporal alignment of MPEG and GLTF media |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0666446B2 (ja) | 1984-03-29 | 1994-08-24 | オリンパス光学工業株式会社 | 固体撮像素子 |
JPH05243546A (ja) * | 1992-02-26 | 1993-09-21 | Nikon Corp | 固体撮像装置 |
JPH06120473A (ja) * | 1992-10-08 | 1994-04-28 | Olympus Optical Co Ltd | 固体撮像装置及びその駆動方法 |
JPH1041493A (ja) | 1996-07-24 | 1998-02-13 | Sony Corp | 固体撮像素子 |
JP2935492B2 (ja) | 1997-10-30 | 1999-08-16 | イノビジョン株式会社 | 固体撮像素子及び固体撮像素子による光信号検出方法 |
JP3315962B2 (ja) | 1999-12-01 | 2002-08-19 | イノテック株式会社 | 固体撮像素子、その製造方法及び固体撮像装置 |
JP2002134729A (ja) * | 2000-10-26 | 2002-05-10 | Innotech Corp | 固体撮像装置及びその駆動方法 |
JP3844699B2 (ja) * | 2001-02-19 | 2006-11-15 | イノテック株式会社 | 可変利得アンプ |
JP2002329856A (ja) * | 2001-05-02 | 2002-11-15 | Canon Inc | 光電変換装置及びその製造方法 |
JP2002353431A (ja) * | 2001-05-22 | 2002-12-06 | Canon Inc | 光電変換装置及びその製造方法 |
JP2004087963A (ja) * | 2002-08-28 | 2004-03-18 | Innotech Corp | 固体撮像素子、固体撮像装置、および固体撮像素子の駆動方法 |
JP2004208006A (ja) * | 2002-12-25 | 2004-07-22 | Innotech Corp | 固体撮像装置 |
JP3901114B2 (ja) * | 2003-03-10 | 2007-04-04 | セイコーエプソン株式会社 | 固体撮像装置およびその製造方法 |
JP2004349430A (ja) * | 2003-05-21 | 2004-12-09 | Sharp Corp | 固体撮像素子とその駆動方法 |
-
2005
- 2005-01-28 US US11/044,864 patent/US7193257B2/en active Active
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2007
- 2007-02-06 US US11/671,693 patent/US7242042B2/en active Active
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2011
- 2011-07-22 JP JP2011160533A patent/JP5316605B2/ja active Active
- 2011-07-22 JP JP2011160534A patent/JP5316606B2/ja active Active
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- 2013-05-31 JP JP2013115064A patent/JP5713050B2/ja active Active
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US20070134836A1 (en) | 2007-06-14 |
JP2013175785A (ja) | 2013-09-05 |
JP5316606B2 (ja) | 2013-10-16 |
JP2011216910A (ja) | 2011-10-27 |
JP2011249831A (ja) | 2011-12-08 |
US7242042B2 (en) | 2007-07-10 |
US7193257B2 (en) | 2007-03-20 |
US20050167707A1 (en) | 2005-08-04 |
JP5316605B2 (ja) | 2013-10-16 |
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