JP4655898B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP4655898B2 JP4655898B2 JP2005330671A JP2005330671A JP4655898B2 JP 4655898 B2 JP4655898 B2 JP 4655898B2 JP 2005330671 A JP2005330671 A JP 2005330671A JP 2005330671 A JP2005330671 A JP 2005330671A JP 4655898 B2 JP4655898 B2 JP 4655898B2
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- 238000003384 imaging method Methods 0.000 title claims description 28
- 238000012546 transfer Methods 0.000 claims description 51
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 238000012545 processing Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 17
- 230000000875 corresponding effect Effects 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 10
- 238000012937 correction Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 4
- 230000002596 correlated effect Effects 0.000 claims description 4
- 238000005070 sampling Methods 0.000 claims description 4
- 230000007547 defect Effects 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 description 14
- 230000003321 amplification Effects 0.000 description 13
- 238000003199 nucleic acid amplification method Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005096 rolling process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000035508 accumulation Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
Description
Low≦Low1≦Vg1≦Vdd (ただし、Low<Vdd)
なる不等式が成立する電位である。また、上記の期間(4)ではスイッチSW1が図8(I)に示すようにオフ、スイッチSW2が同図(J)に示すようにオン、スイッチsc1が同図(M)に示すようにオン、スイッチsc2が同図(N)に示すようにオフとされる。
45 リング状ゲート電極
46 n+型ソース領域
47 ソース近傍p型領域
48 n+型ドレイン領域
49 埋め込みp−型領域
50、64 フォトダイオード
51 転送ゲート電極
52、66 ドレイン電極配線
53、69 リング状ゲート電極配線
54、74 ソース電極配線(出力線)
55、71 転送ゲート電極配線
61、101、202 画素敷き詰め領域
62 画素
63 リング状ゲートMOSFET
65 転送ゲートMOSFET
102 電位制御回路
103 垂直シフトレジスタ
104 CDS回路
105 水平シフトレジスタ
106 アンプ
107 ADC(AD変換器)
108 デジタル信号処理回路
109 信号発生回路
110 p基板
111、116、122、132 nウェル
112 画素敷き詰め領域内のn-ウェル
113、117、123、133 pウェル
114、118、124、129 埋め込みのp-型領域
115、119、125、130 リング状ゲート電極
121、131、134 ゲート回路
201 駆動等制御回路領域
203 ADC等回路領域
204 信号処理等回路領域
205 CDS等回路領域
Claims (4)
- 光電変換領域に光電変換されて蓄積された電荷を、電荷転送手段で信号出力用トランジスタへ転送し、前記信号出力用トランジスタが入力された電荷の量を電位の変化として出力する固体撮像装置であって、
第1の導電型の基板の表面に、それぞれ第2の導電型の第1のウェルと第2のウェルとが互いに分離して形成され、前記第2のウェルよりも不純物濃度が低くされた前記第1のウェル内に、第1の導電型の前記光電変換領域と前記信号出力用トランジスタの第2の導電型のソース領域及びドレイン領域とを少なくとも含む画素敷き詰め領域を形成し、
前記第1のウェルよりも不純物濃度が高くされた前記第2のウェル内に、MOS型の電気回路を形成したことを特徴とする固体撮像装置。 - 前記電気回路は、前記電荷転送手段及び前記信号出力用トランジスタを動作させる電位制御回路と、前記信号出力用トランジスタから出力される信号に対して相関二重サンプリングを行うCDS回路と、前記CDS回路から出力される信号を増幅するアンプと、前記アンプから出力される信号をデジタル信号に変換するAD変換器と、前記AD変換器から出力されるデジタル信号に対して信号レベル補正や画素欠陥補正などの所定の信号処理を行う信号処理回路とのうち、いずれか一以上の回路であることを特徴とする請求項1記載の固体撮像装置。
- 全画素の前記光電変換領域に被写体からの光を同時に露光し、露光期間に前記光電変換領域に蓄積した前記電荷を、前記電荷転送手段を介して前記信号出力用トランジスタへ全画素一斉に転送した後、各画素の前記信号出力用トランジスタから撮像信号を順次出力するグローバルシャッタ機能を備えたことを特徴とする請求項1記載の固体撮像装置。
- 前記信号出力用トランジスタは、
前記第1のウェル上に絶縁膜を挟んで形成されたリング状ゲート電極と、前記第1のウェル内に該第1のウェルと電気的に一体化するよう形成された高濃度の前記第2の導電型のドレイン領域と、前記リング状ゲート電極の中心開口部に対応する前記第1のウェル内の位置に設けられた前記第2の導電型のソース領域と、前記ソース領域を取り囲み、かつ、前記ドレイン領域まで達しないように前記第1のウェル内に設けられた第1の導電型のソース近傍領域とからなり、
前記電荷転送手段は、前記絶縁膜上の前記リング状ゲート電極と前記光電変換領域の間の、前記第1のウェル上に前記絶縁膜を挟んで設けられた転送ゲート電極を有することを特徴とする請求項1記載の固体撮像装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005330671A JP4655898B2 (ja) | 2005-11-15 | 2005-11-15 | 固体撮像装置 |
KR1020060097329A KR100820757B1 (ko) | 2005-11-15 | 2006-10-02 | 고체촬상장치 |
CNA2006101446513A CN1967855A (zh) | 2005-11-15 | 2006-11-10 | 固体摄像装置 |
US11/599,867 US20070109437A1 (en) | 2005-11-15 | 2006-11-15 | Solid state image sensing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005330671A JP4655898B2 (ja) | 2005-11-15 | 2005-11-15 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007142587A JP2007142587A (ja) | 2007-06-07 |
JP4655898B2 true JP4655898B2 (ja) | 2011-03-23 |
Family
ID=38040380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005330671A Active JP4655898B2 (ja) | 2005-11-15 | 2005-11-15 | 固体撮像装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070109437A1 (ja) |
JP (1) | JP4655898B2 (ja) |
KR (1) | KR100820757B1 (ja) |
CN (1) | CN1967855A (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100623347B1 (ko) * | 2004-12-03 | 2006-09-19 | 매그나칩 반도체 유한회사 | 제어 신호의 레벨 변동을 최소화할 수 있는 이미지센서 |
JP4689687B2 (ja) | 2008-01-29 | 2011-05-25 | 株式会社モルフォ | 撮像方法および撮像装置 |
JP5386875B2 (ja) * | 2008-08-01 | 2014-01-15 | ソニー株式会社 | 固体撮像装置の製造方法 |
JP5885401B2 (ja) | 2010-07-07 | 2016-03-15 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5656484B2 (ja) | 2010-07-07 | 2015-01-21 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5697371B2 (ja) * | 2010-07-07 | 2015-04-08 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5751766B2 (ja) | 2010-07-07 | 2015-07-22 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5645513B2 (ja) | 2010-07-07 | 2014-12-24 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
JP5643555B2 (ja) | 2010-07-07 | 2014-12-17 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
JP5934930B2 (ja) | 2011-02-04 | 2016-06-15 | パナソニックIpマネジメント株式会社 | 固体撮像装置およびその駆動方法 |
GB201302664D0 (en) * | 2013-02-15 | 2013-04-03 | Cmosis Nv | A pixel structure |
WO2016103315A1 (ja) * | 2014-12-22 | 2016-06-30 | オリンパス株式会社 | 固体撮像装置および撮像装置 |
CN106231213B (zh) * | 2016-09-29 | 2023-08-22 | 北方电子研究院安徽有限公司 | 一种可消除smear效应的带快门ccd像元结构 |
CN114975498A (zh) * | 2022-05-09 | 2022-08-30 | 长春长光辰芯光电技术有限公司 | 一种尺寸可拓展的cmos图像传感器像素及电子设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000150848A (ja) * | 1998-11-09 | 2000-05-30 | Toshiba Corp | 固体撮像装置 |
JP2002134729A (ja) * | 2000-10-26 | 2002-05-10 | Innotech Corp | 固体撮像装置及びその駆動方法 |
JP2002353433A (ja) * | 2001-05-25 | 2002-12-06 | Canon Inc | 固体撮像装置 |
JP2005159150A (ja) * | 2003-11-27 | 2005-06-16 | Innotech Corp | Mos型固体撮像装置及びその駆動方法 |
JP2005184358A (ja) * | 2003-12-18 | 2005-07-07 | Sony Corp | 固体撮像装置、及び画素信号読み出し方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09246514A (ja) * | 1996-03-12 | 1997-09-19 | Sharp Corp | 増幅型固体撮像装置 |
US6825878B1 (en) * | 1998-12-08 | 2004-11-30 | Micron Technology, Inc. | Twin P-well CMOS imager |
ATE362655T1 (de) * | 2002-08-30 | 2007-06-15 | Koninkl Philips Electronics Nv | Bildsensor, kamerasystem mit dem bildsensor |
US7193257B2 (en) * | 2004-01-29 | 2007-03-20 | Victor Company Of Japan, Ltd. | Solid state image sensing device and manufacturing and driving methods thereof |
JP4984376B2 (ja) | 2004-04-15 | 2012-07-25 | ソニー株式会社 | 固体撮像装置 |
JP4285432B2 (ja) | 2005-04-01 | 2009-06-24 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
JP4730056B2 (ja) * | 2005-05-31 | 2011-07-20 | Jfeスチール株式会社 | 伸びフランジ成形性に優れた高強度冷延鋼板の製造方法 |
-
2005
- 2005-11-15 JP JP2005330671A patent/JP4655898B2/ja active Active
-
2006
- 2006-10-02 KR KR1020060097329A patent/KR100820757B1/ko active IP Right Grant
- 2006-11-10 CN CNA2006101446513A patent/CN1967855A/zh active Pending
- 2006-11-15 US US11/599,867 patent/US20070109437A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000150848A (ja) * | 1998-11-09 | 2000-05-30 | Toshiba Corp | 固体撮像装置 |
JP2002134729A (ja) * | 2000-10-26 | 2002-05-10 | Innotech Corp | 固体撮像装置及びその駆動方法 |
JP2002353433A (ja) * | 2001-05-25 | 2002-12-06 | Canon Inc | 固体撮像装置 |
JP2005159150A (ja) * | 2003-11-27 | 2005-06-16 | Innotech Corp | Mos型固体撮像装置及びその駆動方法 |
JP2005184358A (ja) * | 2003-12-18 | 2005-07-07 | Sony Corp | 固体撮像装置、及び画素信号読み出し方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070109437A1 (en) | 2007-05-17 |
KR100820757B1 (ko) | 2008-04-11 |
CN1967855A (zh) | 2007-05-23 |
JP2007142587A (ja) | 2007-06-07 |
KR20070051668A (ko) | 2007-05-18 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |