JP5688008B2 - 発光ダイオードの製造方法 - Google Patents

発光ダイオードの製造方法 Download PDF

Info

Publication number
JP5688008B2
JP5688008B2 JP2011502123A JP2011502123A JP5688008B2 JP 5688008 B2 JP5688008 B2 JP 5688008B2 JP 2011502123 A JP2011502123 A JP 2011502123A JP 2011502123 A JP2011502123 A JP 2011502123A JP 5688008 B2 JP5688008 B2 JP 5688008B2
Authority
JP
Japan
Prior art keywords
layer
gallium nitride
type
base layer
type gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011502123A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011526733A5 (https=
JP2011526733A (ja
Inventor
リン、チャオ−クン
リウ、ヘン
Original Assignee
マヌティウス アイピー インコーポレーテッド
マヌティウス アイピー インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by マヌティウス アイピー インコーポレーテッド, マヌティウス アイピー インコーポレーテッド filed Critical マヌティウス アイピー インコーポレーテッド
Publication of JP2011526733A publication Critical patent/JP2011526733A/ja
Publication of JP2011526733A5 publication Critical patent/JP2011526733A5/ja
Application granted granted Critical
Publication of JP5688008B2 publication Critical patent/JP5688008B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07252—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/227—Multiple bumps having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
JP2011502123A 2008-03-31 2009-03-27 発光ダイオードの製造方法 Active JP5688008B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US4117208P 2008-03-31 2008-03-31
US61/041,172 2008-03-31
US12/120,051 2008-05-13
US12/120,051 US7781780B2 (en) 2008-03-31 2008-05-13 Light emitting diodes with smooth surface for reflective electrode
PCT/US2009/038695 WO2009123936A2 (en) 2008-03-31 2009-03-27 Light emitting diodes with smooth surface for reflective electrode

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013257878A Division JP2014064034A (ja) 2008-03-31 2013-12-13 発光ダイオード

Publications (3)

Publication Number Publication Date
JP2011526733A JP2011526733A (ja) 2011-10-13
JP2011526733A5 JP2011526733A5 (https=) 2012-05-24
JP5688008B2 true JP5688008B2 (ja) 2015-03-25

Family

ID=41115742

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011502123A Active JP5688008B2 (ja) 2008-03-31 2009-03-27 発光ダイオードの製造方法
JP2013257878A Pending JP2014064034A (ja) 2008-03-31 2013-12-13 発光ダイオード

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013257878A Pending JP2014064034A (ja) 2008-03-31 2013-12-13 発光ダイオード

Country Status (8)

Country Link
US (5) US7781780B2 (https=)
EP (1) EP2257985A4 (https=)
JP (2) JP5688008B2 (https=)
KR (1) KR101287365B1 (https=)
CN (1) CN102150272B (https=)
MY (1) MY159231A (https=)
TW (1) TWI413278B (https=)
WO (1) WO2009123936A2 (https=)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7641735B2 (en) 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US7781780B2 (en) * 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
KR101139142B1 (ko) 2008-11-06 2012-04-26 파나소닉 주식회사 질화물계 반도체 소자 및 그 제조 방법
WO2010116703A1 (ja) * 2009-04-06 2010-10-14 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP2010251390A (ja) * 2009-04-13 2010-11-04 Oki Electric Ind Co Ltd 発光ダイオード及びその製造方法
KR101712094B1 (ko) * 2009-11-27 2017-03-03 포항공과대학교 산학협력단 질화물갈륨계 수직 발광다이오드 및 그 제조 방법
KR101171722B1 (ko) * 2009-12-25 2012-08-06 파나소닉 주식회사 질화물계 반도체 소자 및 그의 제조방법
US8604500B2 (en) * 2010-03-17 2013-12-10 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
JP5806734B2 (ja) 2010-06-30 2015-11-10 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 熱勾配制御による窒化アルミニウム大単結晶成長
JP5593163B2 (ja) * 2010-08-18 2014-09-17 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
KR101842586B1 (ko) * 2011-04-05 2018-03-28 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR101873476B1 (ko) 2011-04-11 2018-07-03 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
CN102269534B (zh) * 2011-07-25 2012-11-28 天津空中代码工程应用软件开发有限公司 一种旋流式热导管
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
US9847372B2 (en) * 2011-12-01 2017-12-19 Micron Technology, Inc. Solid state transducer devices with separately controlled regions, and associated systems and methods
US9450152B2 (en) * 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
KR102005236B1 (ko) * 2012-07-05 2019-07-31 삼성전자주식회사 반사 전극 형성을 위한 콘택층을 포함하는 반도체 발광 소자
US8748202B2 (en) 2012-09-14 2014-06-10 Bridgelux, Inc. Substrate free LED package
US10276749B2 (en) 2013-01-09 2019-04-30 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
WO2014110197A1 (en) 2013-01-09 2014-07-17 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US9768357B2 (en) 2013-01-09 2017-09-19 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
EP2973664B1 (en) * 2013-03-15 2020-10-14 Crystal Is, Inc. Ultraviolet light-emitting device and method of forming a contact to an ultraviolet light-emitting device
CN105374906A (zh) * 2014-08-26 2016-03-02 广东量晶光电科技有限公司 一种led芯片及其制备方法
CN104319343B (zh) * 2014-10-29 2017-03-08 华灿光电股份有限公司 一种白光led的制作方法及白光led
TWI568016B (zh) * 2014-12-23 2017-01-21 錼創科技股份有限公司 半導體發光元件
CN108292694A (zh) 2015-07-13 2018-07-17 科莱约纳诺公司 纳米线/纳米锥形状的发光二极管及光检测器
EA201890238A1 (ru) 2015-07-31 2018-08-31 Крайонано Ас Способ выращивания нанопроволок или нанопирамидок на графитовых подложках
US9680057B2 (en) * 2015-09-17 2017-06-13 Crystal Is, Inc. Ultraviolet light-emitting devices incorporating two-dimensional hole gases
CN111066158B (zh) * 2017-09-07 2022-05-03 苏州晶湛半导体有限公司 发光器件表面粗化的方法与发光器件
GB201913701D0 (en) 2019-09-23 2019-11-06 Crayonano As Composition of matter
TWI866707B (zh) * 2022-04-29 2024-12-11 晶元光電股份有限公司 半導體發光元件

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6055678A (ja) 1983-09-06 1985-03-30 Nec Corp 発光ダイオ−ド
JPH08115877A (ja) * 1994-10-17 1996-05-07 Sony Corp 半導体エピタキシャル成長方法
JPH104208A (ja) * 1996-06-14 1998-01-06 Omron Corp 面発光型半導体発光素子
JPH1140851A (ja) * 1997-07-15 1999-02-12 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
TW418549B (en) * 1998-06-26 2001-01-11 Sharp Kk Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same
JP3965203B2 (ja) * 1998-06-26 2007-08-29 シャープ株式会社 窒化物系化合物半導体発光素子
EP1076388B1 (en) * 1999-02-26 2009-03-11 The Furukawa Electric Co., Ltd. Semiconductor laser
US6639354B1 (en) 1999-07-23 2003-10-28 Sony Corporation Light emitting device, production method thereof, and light emitting apparatus and display unit using the same
JP4282173B2 (ja) * 1999-09-03 2009-06-17 シャープ株式会社 窒素化合物半導体発光素子およびその製造方法
JP2001196702A (ja) 2000-01-11 2001-07-19 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6515417B1 (en) 2000-01-27 2003-02-04 General Electric Company Organic light emitting device and method for mounting
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP3531865B2 (ja) 2000-07-06 2004-05-31 独立行政法人 科学技術振興機構 超平坦透明導電膜およびその製造方法
JP2002190635A (ja) * 2000-12-20 2002-07-05 Sharp Corp 半導体レーザ素子およびその製造方法
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
TW564584B (en) * 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
JP4178836B2 (ja) * 2002-05-29 2008-11-12 ソニー株式会社 窒化ガリウム系半導体素子及びその製造方法
JP4493902B2 (ja) 2002-10-15 2010-06-30 大阪府 透明導電膜の製造方法
JP4052150B2 (ja) * 2003-03-05 2008-02-27 住友電気工業株式会社 窒化物系半導体装置の製造方法
US7151881B2 (en) 2003-05-29 2006-12-19 Applied Materials, Inc. Impurity-based waveguide detectors
KR100483049B1 (ko) * 2003-06-03 2005-04-15 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드의 제조방법
KR20110042249A (ko) * 2003-06-04 2011-04-25 유명철 수직 구조 화합물 반도체 디바이스의 제조 방법
JP2005112641A (ja) * 2003-10-03 2005-04-28 Sumitomo Electric Ind Ltd 窒化物半導体基板および窒化物半導体基板の製造方法
CN1638055A (zh) * 2003-12-24 2005-07-13 松下电器产业株式会社 氮化物系化合物半导体元件的制造方法
JP4438422B2 (ja) * 2004-01-20 2010-03-24 日亜化学工業株式会社 半導体発光素子
US7288797B2 (en) * 2004-01-20 2007-10-30 Nichia Corporation Semiconductor light emitting element
US20050285128A1 (en) * 2004-02-10 2005-12-29 California Institute Of Technology Surface plasmon light emitter structure and method of manufacture
US7569863B2 (en) 2004-02-19 2009-08-04 Panasonic Corporation Semiconductor light emitting device
US20050189551A1 (en) 2004-02-26 2005-09-01 Hui Peng High power and high brightness white LED assemblies and method for mass production of the same
JP4452607B2 (ja) * 2004-03-05 2010-04-21 順一 島田 照明装置、フィルタ装置、画像表示装置
KR100634503B1 (ko) * 2004-03-12 2006-10-16 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
WO2006005062A2 (en) 2004-06-30 2006-01-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
TWI299914B (en) 2004-07-12 2008-08-11 Epistar Corp Light emitting diode with transparent electrically conductive layer and omni directional reflector
JP2006073619A (ja) * 2004-08-31 2006-03-16 Sharp Corp 窒化物系化合物半導体発光素子
US7849381B2 (en) 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
EP1681712A1 (en) * 2005-01-13 2006-07-19 S.O.I. Tec Silicon on Insulator Technologies S.A. Method of producing substrates for optoelectronic applications
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
JP2006295126A (ja) * 2005-03-15 2006-10-26 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子およびエピタキシャル基板
TW200707799A (en) * 2005-04-21 2007-02-16 Aonex Technologies Inc Bonded intermediate substrate and method of making same
CN100372137C (zh) * 2005-05-27 2008-02-27 晶能光电（江西）有限公司 具有上下电极结构的铟镓铝氮发光器件及其制造方法
US7863630B2 (en) * 2005-07-05 2011-01-04 Showa Denko K.K. Light-emitting diode and method for fabrication thereof
KR100706952B1 (ko) * 2005-07-22 2007-04-12 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
JP2007088351A (ja) * 2005-09-26 2007-04-05 Hitachi Cable Ltd 発光ダイオード用エピタキシャルウェハおよび発光ダイオード
JP2007109713A (ja) 2005-10-11 2007-04-26 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
US20070096121A1 (en) 2005-10-28 2007-05-03 Ni Ying C Light emitting diode and method for manufacturing the same
KR100721150B1 (ko) 2005-11-24 2007-05-22 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자
KR101115533B1 (ko) * 2005-11-25 2012-03-08 서울옵토디바이스주식회사 플립칩 구조의 발광 소자 및 이의 제조 방법
WO2007073001A1 (en) * 2005-12-22 2007-06-28 Showa Denko K.K. Light-emitting diode and method for fabricant thereof
KR100735488B1 (ko) * 2006-02-03 2007-07-04 삼성전기주식회사 질화갈륨계 발광다이오드 소자의 제조방법
US7687811B2 (en) 2006-03-21 2010-03-30 Lg Electronics Inc. Vertical light emitting device having a photonic crystal structure
JP5110804B2 (ja) 2006-03-24 2012-12-26 日本エレクトロプレイテイング・エンジニヤース株式会社 Ｌｅｄの製造方法
US7615789B2 (en) * 2006-05-09 2009-11-10 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode device structure
CN100452460C (zh) 2006-05-29 2009-01-14 金芃 通孔垂直结构的半导体芯片及其制造方法
JP2008010835A (ja) * 2006-05-31 2008-01-17 Sumitomo Electric Ind Ltd 窒化物結晶の表面処理方法、窒化物結晶基板、エピタキシャル層付窒化物結晶基板および半導体デバイス、ならびにエピタキシャル層付窒化物結晶基板および半導体デバイスの製造方法
US8080828B2 (en) * 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
JP4946195B2 (ja) 2006-06-19 2012-06-06 サンケン電気株式会社 半導体発光素子及びその製造方法
JP2010515205A (ja) * 2006-07-18 2010-05-06 ザ ユニバーシティ オブ サザン カリフォルニア ナノチューブを用いた有機光電子デバイス電極
TWI369009B (en) * 2007-09-21 2012-07-21 Nat Univ Chung Hsing Light-emitting chip device with high thermal conductivity
US8692286B2 (en) * 2007-12-14 2014-04-08 Philips Lumileds Lighing Company LLC Light emitting device with bonded interface
US7598105B2 (en) * 2007-12-21 2009-10-06 Tekcore Co., Ltd. Light emitting diode structure and method for fabricating the same
US7781780B2 (en) * 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode

Also Published As

Publication number Publication date
JP2014064034A (ja) 2014-04-10
US20090242924A1 (en) 2009-10-01
US8691606B2 (en) 2014-04-08
US9437776B2 (en) 2016-09-06
US20130102095A1 (en) 2013-04-25
JP2011526733A (ja) 2011-10-13
KR20100123686A (ko) 2010-11-24
US8168984B2 (en) 2012-05-01
KR101287365B1 (ko) 2013-07-18
EP2257985A2 (en) 2010-12-08
WO2009123936A3 (en) 2009-12-30
TW200941774A (en) 2009-10-01
CN102150272B (zh) 2015-03-11
TWI413278B (zh) 2013-10-21
US20110140125A1 (en) 2011-06-16
US20140080234A1 (en) 2014-03-20
US8163578B2 (en) 2012-04-24
US20110008923A1 (en) 2011-01-13
CN102150272A (zh) 2011-08-10
MY159231A (en) 2016-12-30
WO2009123936A2 (en) 2009-10-08
EP2257985A4 (en) 2015-04-22
US7781780B2 (en) 2010-08-24

Similar Documents

Publication Publication Date Title
JP5688008B2 (ja) 発光ダイオードの製造方法
JP5037169B2 (ja) 窒化物系半導体発光素子及びその製造方法
CN101515614B (zh) 半导体发光元件
JP5169012B2 (ja) 半導体発光素子
JP2006128227A (ja) 窒化物半導体発光素子
KR20080087135A (ko) 질화물 반도체 발광 소자
JP2012129357A (ja) 半導体発光素子
CN1971955A (zh) 垂直基于氮化镓的发光二极管
JP2010278112A (ja) 半導体発光素子
CN100386899C (zh) 高效高亮全反射发光二极管及制作方法
CN101689553B (zh) 在金属基板上制造高效率紫外线垂直式发光二极管的方法
JP4803302B2 (ja) 窒化物半導体発光素子
JP5245529B2 (ja) 半導体発光素子及び半導体発光素子の製造方法
JP4894411B2 (ja) 半導体発光素子
JP2013175635A (ja) 半導体発光素子、およびその製造方法
WO2016072326A1 (ja) 半導体発光素子
KR101072199B1 (ko) 발광소자 및 그 제조방법
KR100726966B1 (ko) 동종기판의 표면 형상을 이용한 질화갈륨계 반도체발광소자 및 그 제조방법
KR20090072478A (ko) 발광 다이오드 및 그 제조방법
JP2010141225A (ja) 半導体発光素子

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20120130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120326

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120326

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130417

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130423

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20130627

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130723

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20130729

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130918

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131213

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20131220

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20140124

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20141112

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20141112

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141203

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150123

R150 Certificate of patent or registration of utility model

Ref document number: 5688008

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250