JP5684455B2 - 成長中にp型ドーパントがドープされたp型半極性III窒化物半導体を使用して、該III窒化物デバイスまたはIII窒化物半導体を製造する方法、半極性III窒化物半導体、および、p型III窒化物半導体を製造する方法 - Google Patents
成長中にp型ドーパントがドープされたp型半極性III窒化物半導体を使用して、該III窒化物デバイスまたはIII窒化物半導体を製造する方法、半極性III窒化物半導体、および、p型III窒化物半導体を製造する方法 Download PDFInfo
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- JP5684455B2 JP5684455B2 JP2008554403A JP2008554403A JP5684455B2 JP 5684455 B2 JP5684455 B2 JP 5684455B2 JP 2008554403 A JP2008554403 A JP 2008554403A JP 2008554403 A JP2008554403 A JP 2008554403A JP 5684455 B2 JP5684455 B2 JP 5684455B2
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- nitride semiconductor
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- iii nitride
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- 150000004767 nitrides Chemical class 0.000 title claims description 134
- 239000004065 semiconductor Substances 0.000 title claims description 123
- 238000000034 method Methods 0.000 title claims description 70
- 239000002019 doping agent Substances 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000013078 crystal Substances 0.000 claims description 58
- 239000011777 magnesium Substances 0.000 claims description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 51
- 229910002601 GaN Inorganic materials 0.000 claims description 46
- 229910052738 indium Inorganic materials 0.000 claims description 41
- 229910052782 aluminium Inorganic materials 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000137 annealing Methods 0.000 claims description 23
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 18
- 229910052749 magnesium Inorganic materials 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 239000011029 spinel Substances 0.000 claims description 7
- 229910052596 spinel Inorganic materials 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- 229910020068 MgAl Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 230000010287 polarization Effects 0.000 description 20
- 230000008901 benefit Effects 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 13
- 230000005693 optoelectronics Effects 0.000 description 11
- 230000001965 increasing effect Effects 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 8
- 230000006911 nucleation Effects 0.000 description 8
- 238000010899 nucleation Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 230000002269 spontaneous effect Effects 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- -1 InN Chemical compound 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000005699 Stark effect Effects 0.000 description 1
- USZGMDQWECZTIQ-UHFFFAOYSA-N [Mg](C1C=CC=C1)C1C=CC=C1 Chemical compound [Mg](C1C=CC=C1)C1C=CC=C1 USZGMDQWECZTIQ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
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- Crystals, And After-Treatments Of Crystals (AREA)
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Description
本出願は、同時係属出願であって、共通の譲受人の米国特許出願第60/772,184号(2006年2月10日出願、名称「METHOD FOR CONDUCTIVITY CONTROL OF SEMIPOLAR (Al,In,Ga,B)N」、出願人(John F. Kaeding、Hitoshi Sato、Michael Iza、Hirokuni Asamizu、Hong Zhong、Steven P.DenBaars、およびShuji Nakamura)、代理人整理番号30794.166−US−P1(2006−285))に対する米国特許法119条(e)項の利益を主張するものであり、その出願内容は、参考として本明細書に援用される。
米国実用特許出願第11/372,914号(2006年3月10日出願、出願人(Troy J.Baker、Benjamin A.Haskell、Paul T.Fini、Steven P.DenBaars、James S.Speck、およびShuji Nakamura)、名称「TECHNIQUE FOR THE GROWTH OF PLANAR SEMI−POLAR GALLIUM NITRIDE」、代理人整理番号30794.128−US−U1(2005−471))であって、米国仮特許出願第60/660,283号(2005年3月10日出願、出願人(Troy J.Baker、Benjamin A.Haskell、Paul T.Fini、Steven P.DenBaars、James S.Speck、およびShuji Nakamura)、名称「TECHNIQUE FOR THE GROWTH OF PLANAR SEMI−POLAR GALLIUM NITRIDE」、代理人整理番号30794.128−US−P1(2005−471))の米国特許法119条(e)項の利益を主張するもの;
米国実用特許出願第11/444,946号(2006年6月1日出願、出願人(Robert M.Farrell,Jr.、Troy J.Baker、Arpan Chakraborty、Benjamin A.Haskell、P. Morgan Pattison、Rajat Sharma、Umesh K.Mishra、Steven P.DenBaars、James S.Speck、およびShuji Nakamura)、名称「TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR(Ga,Al,In,B)N THIN FILMS,HETEROSTRUCTURES,AND DEVICES」、代理人整理番号30794.140−US−Ul(2005−668))であって、米国仮特許出願第60/686,244号(2005年6月1日出願、出願人(Robert M.Farrell, Jr.、Troy J.Baker、Arpan Chakraborty、Benjamin A.Haskell、P.Morgan Pattison、Raj at Sharma、Umesh K.Mishra、Steven P.DenBaars、James S.Speck、およびShuji Nakamura)、名称「TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR(Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES」、代理人整理番号30794.140−US−Pl(2005−668))の米国特許法119条(e)項の利益を主張するもの;
米国実用特許出願第11/486,224号(2006年7月13日出願、出願人(Troy J.Baker、Benjamin A.Haskell、James S.Speck、およびShuji Nakamura)、名称「LATERAL GROWTH METHOD FOR DEFECT REDUCTION OF SEMIPOLAR NITRIDE FILMS」、代理人整理番号30794.141−US−U1(2005−672))であって、米国仮特許出願第60/698,749号(2005年7月13日出願、出願人(Troy J.Baker、Benjamin A.Haskell、James S.Speck、およびShuji Nakamura)、名称「LATERAL GROWTH METHOD FOR DEFECT REDUCTION OF SEMIPOLAR NITRIDE FILMS」、代理人整理番号30794.141−US−P1(2005−672))の米国特許法119条(e)項の利益を主張するもの;
米国実用特許出願第11/517,797号(2006年9月8日出願、出願人(Michael Iza、Troy J.Baker、Benjamin A.Haskell、Steven P.DenBaars、およびShuji Nakamura)、名称「METHOD FOR ENHANCING GROWTH OF SEMIPOLAR(Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION」、代理人整理番号30794.144−US−U1(2005−772))であって、米国仮特許出願第60/715,491号(2005年9月9日出願、出願人(Michael Iza、Troy J.Baker、Benjamin A.Haskell、Steven P.DenBaarsおよびShuji Nakamura)、名称「METHOD FOR ENHANCING GROWTH OF SEMIPOLAR(Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION」、代理人整理番号30794.144−US−P1(2005−772))の米国特許法119条(e)項の利益を主張するもの;
米国実用特許出願第11/523,286号(2006年9月18日出願、出願人(Siddharth Rajan、Chang Soo Suh、James S.Speck、およびUmesh K.Mishra)、名称「N−POLAR ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE ENHANCEMENT−MODE FIELD EFFECT TRANSISTOR」、代理人整理番号30794.148−US−U1(2006−107))であって、米国仮特許出願第60/717,996号(2005年9月16日出願、出願人(Siddharth Rajan、Chang Soo Suh、James S.Speck、およびUmesh K.Mishra)、名称「N−POLAR ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE ENHANCEMENT−MODE FIELD EFFECT TRANSISTOR」、代理人整理番号30794.148−US−P1(2006−107))の米国特許法119条(e)項の利益を主張するもの;
米国実用特許出願第__/___,___号(2007年1月19日出願、出願人(John Kaeding、Dong−Seon Lee、Michael Iza、Troy J.Baker、Hitoshi Sato、Benjamin A.Haskell、James S.Speck、Steven P.Denbaars、およびShuji Nakamura)、名称「METHOD FOR IMPROVED GROWTH OF SEMIPOLAR(AL,IN,GA,B)N」、代理人整理番号30794.150−US−U1(2006−126))であって、米国仮特許出願第60/760,739号(2006年1月20日出願、出願人(John Kaeding, Michael Iza、Troy J.Baker、Hitoshi Sato、Benjamin A.Haskell、James S.Speck、Steven P.Denbaars、およびShuji Nakamura)、名称「METHOD FOR IMPROVED GROWTH OF SEMIPOLAR (AL,IN,GA,B)N」、代理人整理番号30794.150−US−P1(2006−126))の米国特許法119条(e)項の利益を主張するもの;
米国実用特許出願第11/655,572号(2007年1月19日出願、出願人(Hitoshi Sato、John Kaeding、Michael Iza、Troy J.Baker、Benjamin A.Haskell、Steven P.DenBaars、およびShuji Nakamura)、名称「METHOD FOR ENHANCING GROWTH OF SEMIPOLAR(Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION」、代理人整理番号30794.159−US−U1(2006−178))であって、米国仮特許出願第60/760,628号(2006年1月20日出願、出願人(Hitoshi Sato、John Kaeding、Michael Iza、Troy J.Baker、Benjamin A.Haskell、Steven P.DenBaars、およびShuji Nakamura)、名称「METHOD FOR ENHANCING GROWTH OF SEMIPOLAR(Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION」、代理人整理番号30794.159−US−P1(2006−178))の米国特許法119条(e)項の利益を主張するもの;
米国仮特許出願第60/774,467号(2006年2月17日出願、出願人(Hong Zhong、John F.Kaeding、Rajat Sharma、James S.Speck、Steven P.DenBaars、およびShuji Nakamura)、名称「METHOD FOR GROWTH OF SEMIPOLAR(Al,In,Ga,B)N OPTOELECTRONICS DEVICES」、代理人整理番号30794.173 −US−Pl(2006−422));
米国仮特許出願第60/798,933号(2006年5月9日出願、出願人(Arpan Chakraborty、Kwang−Choong Kim、Steven P.DenBaars、James S.Speck、およびUmesh K.Mishra)、名称「TECHNIQUE FOR DEFECT REDUCTION IN NONPOLAR AND SEMIPOLAR GALLIUM NITRIDE FILMS USING IN−SITU SILICON NITRIDE NANOMASKING」、代理人整理番号30794.180−US−P1(2006−530));
米国仮特許出願第60/809,774号(2006年5月31日出願、出願人(Nicholas A.Fichtenbaum、Umesh K.Mishra、Carl J.Neufeld、およびStacia Keller)、名称「OPTOELECTRONIC DEVICES FORMED BY REGROWTH ON N−POLAR NANOPILLAR AND NANOSTRIPE ARRAYS」、代理人整理番号30794.182−US−P1(2006−638));
米国仮特許出願第60/822,600号(2006年8月16日出願、出願人(Michael Iza、Hitoshi Sato、Steven P.DenBaars、およびShuji Nakamura)、名称「METHOD FOR DEPOSITION OF MAGNESIUM DOPED(Al,In,Ga,B)N LAYERS」、代理人整理番号30794.187−US−P1(2006−678));
米国仮特許出願第60/866,035号(2006年11月15日出願、出願人(Stacia Keller、Umesh K.Mishra、およびNicholas A.Fichtenbaum)、名称「METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH− QUALITY N−FACE GaN,InN, and AIN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION」、代理人整理番号30794.207−US−P1(2007−121));
米国仮特許出願第60/869,540号(2006年11月11日出願、出願人(Steven P.DenBaars、Mathew C.Schmidt、Kwang Choong Kim、James S.Speck、およびShuji Nakamura)、名称「NON−POLAR(M−PLANE) AND SEMI−POLAR EMITTING DEVICES」、代理人整理番号30794.213−US−Pl(2007−317));および
米国仮特許出願第60/869,701号(2006年11月11日出願、出願人(Kwang Choong Kim、Mathew C.Schmidt、Feng Wu、Asako Hirai、Melvin B.McLaurin、Steven P.DenBaars、Shuji Nakamura、およびJames S.Speck)、名称「CRYSTAL GROWTH OF M−PLANE AND SEMIPOLAR PLANES OF(Al,In,Ga,B)N ON VARIOUS SUBSTRATES」、代理人整理番号30794.214−US−P1(2007−334));
これらの出願内容は、参考として本明細書に援用される。
本発明は、(Al,In,Ga,B)Nの伝導性を制御する方法に関する。
S.Nakamura、T.Mukai、M.Senoh、N.Iwasa、Jpn.、J.Appl.Phys.、Vol.31(1992)、pp.L139−L142. I.Waki、H.Fujioka、M.Oshima、H.Miki、A.Fukizawa、Appl.Phys.Lett.78 2899(2001).
本発明は、半極性窒化物結晶のドーピングによって、(Al,In,Ga,B)N半導体結晶におけるp型伝導性を制御する方法を含む。そのような制御の例は、<011>方向にミスカットされた{100}MgAl2O4スピネル基板上に堆積される
一実施形態において、
図1は、本発明の好適な実施形態に基づく、スピネル基板上の半極性GaN薄膜上における成長のためのMOCVDプロセスに関するステップを説明する。また図1は、ドープされた半極性窒化物半導体を使用し、窒化物デバイスを製造するステップを含む、窒化物装置における伝導特性を強化または調整する方法を説明する。
本発明の範囲は、本明細書において引用される特定の例以外も含む。
既存の実践は、平面に対してc平面の法線を有するGaNを成長させることである。該平面は、自発分極および圧電性分極を有し、デバイスの性能にとって有害である。c平面窒化物膜上の半極性の利点は、分極の低減および特定デバイスの内部量子効率の向上である。
以下の参考文献は、参照することにより本明細書に組み込まれる。
これで本発明の好ましい実施形態に関する記載を完結する。本発明の1つ以上の実施形態に関する前述の記載は、説明および記述目的で提示されている。本発明を包括すること、または本発明を開示された正確な形態に限定することを意図しない。上述の記載に照らして、多くの修正および変形例が可能である。本発明の範囲は、この詳細な説明によってではなく、本明細書に添付の請求項によって限定されることを意図する。
Claims (23)
- 成長中にp型ドーパントがドープされたp型半極性III窒化物半導体を使用して、該III窒化物デバイスまたはIII窒化物半導体を製造する方法であって、
前記p型半極性III窒化物半導体に対する成長条件、および半極性結晶方向に沿うバンド構造を選択することにより、前記p型半極性III窒化物半導体の正孔濃度およびホール移動度を制御すること
を含み、
前記成長条件を選択することとして、少なくとも、前記p型ドーパントの濃度を制御することを含み、
前記III窒化物は、(Al,In,Ga,B)Nであって、Al x In y Ga n B z Nの組成比が、0≦x≦1、0≦y≦1、0≦n≦1、0≦z≦1であり、
該正孔濃度は、p型ドーパント濃度の少なくとも10%である、方法。 - 前記半極性III窒化物半導体は、窒化ガリウム(GaN)であり、アニーリングされていない窒化ガリウム(GaN)に比べて、より高いキャリア濃度と共に改善された伝導性制御をさらに含む、請求項1に記載の方法。
- 前記半極性III窒化物半導体をミスカット基板上に堆積することを含む、請求項1に記載の方法。
- 前記ミスカット基板は、<011>方向にミスカットされた{100}MgAl2O4スピネル基板であり、前記半極性III窒化物半導体は、
- 前記半極性III窒化物半導体は、
- 前記成長中に、意図的または非意図的にドーパントを前記半極性III窒化物半導体に組み込むことをさらに含む、請求項1に記載の方法。
- 前記ドーパントは、シリコン(Si)、マグネシウム(Mg)、亜鉛(Zn)、または炭素(C)を含む、請求項6に記載の方法。
- 前記非意図的なドーパントは、濃度が1×1019cm−3未満の水素である、請求項6に記載の方法。
- 成長中に前記p型ドーパントを前記半極性III窒化物半導体にドープした後に、引き続く熱アニーリングステップを実行することをさらに含み、該熱アニーリングステップは、該ドープされた半極性III窒化物半導体内の非意図的なドーパントの濃度を変え、該ドープされた半極性III窒化物半導体の伝導性の改善をもたらす、請求項1に記載の方法。
- 請求項1に記載の方法により製造されたデバイス。
- 半極性III窒化物半導体であって、
該半極性III窒化物半導体における制御されたホール移動度およびp型キャリア濃度に基づくp型伝導性を含み、
前記III窒化物は、(Al,In,Ga,B)Nであって、Al x In y Ga n B z Nの組成比が、0≦x≦1、0≦y≦1、0≦n≦1、0≦z≦1であり、
該p型キャリア濃度は、該半極性III窒化物半導体内のp型ドーパント濃度の少なくとも10%であり、該半極性III窒化物半導体のホール移動度は、8〜14cm2/Vsである、半極性III窒化物半導体。 - 前記半極性III窒化物半導体は、8〜14cm2/Vsのホール移動度を含み、前記p型キャリア濃度は、前記ドーパント濃度の10%である、請求項11に記載の半極性III窒化物半導体。
- 前記p型半極性III窒化物半導体はミスカット基板上またはミスカット基板の上方にある、請求項11に記載の半導体。
- 前記半極性III窒化物半導体は、GaNを含む、請求項11に記載の半導体。
- 前記半極性III窒化物半導体は、{10−1−3}、{10−1−1}、{10−12}、{20−21}、{10−14}または{11−22}III窒化物を含む、請求項11に記載の半導体。
- 前記半極性III窒化物半導体は、{10−1−3}または{11−22}III窒化物を含む、請求項11に記載の半導体。
- 前記半極性III窒化物半導体は、
- p型III窒化物半導体を製造する方法であって、
成長中にp型ドーパントをIII窒化物半導体にドープすることであって、該III窒化物半導体は、半極性III窒化物半導体である、ことと、
該p型ドーパントを該III窒化物半導体に成長中にドープした後に、引き続く熱アニーリングステップを実行することであって、該熱アニーリングステップは、該p型ドーパントがドープされたIII窒化物半導体内の非意図的なドーパントの濃度を変え、該p型ドーパントがドープされたIII窒化物半導体の伝導性の改善をもたらす、ことと
を含み、
前記III窒化物は、(Al,In,Ga,B)Nであって、Al x In y Ga n B z Nの組成比が、0≦x≦1、0≦y≦1、0≦n≦1、0≦z≦1であり、
該III窒化物半導体内の正孔濃度は、p型ドーパント濃度の少なくとも10%であり、該III窒化物半導体のホール移動度は、8〜14cm2/Vsである、方法。 - 前記p型ドーパントはマグネシウムであり、
前記p型ドーパントの濃度を制御することは、マグネシウムドーパント濃度を生成する、ドーピング中のCp2Mgの流れを変化させることによって、前記半極性III窒化物半導体における該マグネシウムの濃度を変化させることをさらに含み、
該流れは、0よりも大きく0.3μモル/分以下で変化し、該マグネシウムの濃度は、5×1019cm−3未満である、請求項1または17に記載の方法。 - 前記p型半極性III窒化物半導体の所望の正孔濃度およびホール移動度を得るために、前記ミスカット基板のミスカット角を選択することをさらに含む、請求項3に記載の方法。
- 前記アニーリングは、550℃〜850℃の温度で行われる、請求項9または18に記載の方法。
- 前記アニーリングは、800℃より高く、前記正孔濃度は、前記p型ドーパント濃度の10%である、請求項9または18に記載の方法。
- 前記半極性III窒化物半導体はGaNを含む、請求項1に記載の方法。
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EP1984940A4 (en) | 2010-11-10 |
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WO2007095137A8 (en) | 2008-09-18 |
US20070190758A1 (en) | 2007-08-16 |
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WO2007095137A2 (en) | 2007-08-23 |
US20140191244A1 (en) | 2014-07-10 |
US8709925B2 (en) | 2014-04-29 |
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