WO2007095137A3 - Method for conductivity control of (al,in,ga,b)n - Google Patents

Method for conductivity control of (al,in,ga,b)n Download PDF

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Publication number
WO2007095137A3
WO2007095137A3 PCT/US2007/003607 US2007003607W WO2007095137A3 WO 2007095137 A3 WO2007095137 A3 WO 2007095137A3 US 2007003607 W US2007003607 W US 2007003607W WO 2007095137 A3 WO2007095137 A3 WO 2007095137A3
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WO
WIPO (PCT)
Prior art keywords
type conductivity
electronic states
atoms
conductivity control
thin film
Prior art date
Application number
PCT/US2007/003607
Other languages
French (fr)
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WO2007095137A8 (en
WO2007095137A2 (en
Inventor
John F Kaeding
Hitoshi Sato
Michael Iza
Hirokuni Asamizu
Hong Zhong
Steven P Denbaars
Shuji Nakamura
Original Assignee
Univ California
John F Kaeding
Hitoshi Sato
Michael Iza
Hirokuni Asamizu
Hong Zhong
Steven P Denbaars
Shuji Nakamura
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Univ California, John F Kaeding, Hitoshi Sato, Michael Iza, Hirokuni Asamizu, Hong Zhong, Steven P Denbaars, Shuji Nakamura filed Critical Univ California
Priority to JP2008554403A priority Critical patent/JP5684455B2/en
Priority to EP07750442A priority patent/EP1984940A4/en
Priority to KR1020087021910A priority patent/KR101416838B1/en
Publication of WO2007095137A2 publication Critical patent/WO2007095137A2/en
Publication of WO2007095137A8 publication Critical patent/WO2007095137A8/en
Publication of WO2007095137A3 publication Critical patent/WO2007095137A3/en

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02518—Deposited layers
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
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    • H01L21/02612—Formation types
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

A method of controlled p-type conductivity in (Al, In, Ga, B)N semiconductor crystals. Examples include { 1011 } GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
PCT/US2007/003607 2006-02-10 2007-02-09 Method for conductivity control of (al,in,ga,b)n WO2007095137A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008554403A JP5684455B2 (en) 2006-02-10 2007-02-09 Method of manufacturing a III-nitride device or III-nitride semiconductor using a p-type semipolar III nitride semiconductor doped with a p-type dopant during growth, a semipolar III nitride semiconductor, and a p-type III Method for manufacturing a nitride semiconductor
EP07750442A EP1984940A4 (en) 2006-02-10 2007-02-09 Method for conductivity control of (al,in,ga,b)n
KR1020087021910A KR101416838B1 (en) 2006-02-10 2007-02-09 Method for conductivity control of (Al,In,Ga,B)N

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77218406P 2006-02-10 2006-02-10
US60/772,184 2006-02-10

Publications (3)

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WO2007095137A2 WO2007095137A2 (en) 2007-08-23
WO2007095137A8 WO2007095137A8 (en) 2008-09-18
WO2007095137A3 true WO2007095137A3 (en) 2008-11-20

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PCT/US2007/003607 WO2007095137A2 (en) 2006-02-10 2007-02-09 Method for conductivity control of (al,in,ga,b)n

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US (3) US8193079B2 (en)
EP (1) EP1984940A4 (en)
JP (3) JP5684455B2 (en)
KR (1) KR101416838B1 (en)
WO (1) WO2007095137A2 (en)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101145755B1 (en) 2005-03-10 2012-05-16 재팬 사이언스 앤드 테크놀로지 에이젼시 Technique for the growth of planar semi-polar gallium nitride
TWI455181B (en) 2005-06-01 2014-10-01 Univ California Technique for the growth and fabrication of semipolar (ga,al,in,b)n thin films, heterostructures, and devices
KR20080104148A (en) * 2006-02-17 2008-12-01 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Method for growth of semipolar (al,in,ga,b)n optoelectronic devices
US8193020B2 (en) * 2006-11-15 2012-06-05 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
CA2669228C (en) * 2006-11-15 2014-12-16 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition
WO2008073469A1 (en) * 2006-12-11 2008-06-19 Lumenz, Llc Zinc oxide multi-junction photovoltaic cells and optoelectronic devices
US8458262B2 (en) * 2006-12-22 2013-06-04 At&T Mobility Ii Llc Filtering spam messages across a communication network
WO2009039408A1 (en) * 2007-09-19 2009-03-26 The Regents Of The University Of California Method for increasing the area of non-polar and semi-polar nitride substrates
WO2009124317A2 (en) * 2008-04-04 2009-10-08 The Regents Of The University Of California Mocvd growth technique for planar semipolar (al, in, ga, b)n based light emitting diodes
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8871024B2 (en) 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8303710B2 (en) * 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20100003492A1 (en) * 2008-07-07 2010-01-07 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
EP2319086A4 (en) 2008-08-04 2014-08-27 Soraa Inc White light devices using non-polar or semipolar gallium containing materials and phosphors
US8021481B2 (en) 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US8979999B2 (en) 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8323405B2 (en) * 2008-08-07 2012-12-04 Soraa, Inc. Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
US8430958B2 (en) 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US20100117070A1 (en) * 2008-09-18 2010-05-13 Lumenz Llc Textured semiconductor light-emitting devices
EP2253988A1 (en) * 2008-09-19 2010-11-24 Christie Digital Systems USA, Inc. A light integrator for more than one lamp
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
US8461071B2 (en) 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US8878230B2 (en) 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
WO2010101946A1 (en) * 2009-03-02 2010-09-10 The Regents Of The University Of California DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES
WO2010113238A1 (en) * 2009-04-03 2010-10-07 パナソニック株式会社 Nitride semiconductor element and method for manufacturing same
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
US10108079B2 (en) 2009-05-29 2018-10-23 Soraa Laser Diode, Inc. Laser light source for a vehicle
US8427590B2 (en) 2009-05-29 2013-04-23 Soraa, Inc. Laser based display method and system
US9829780B2 (en) 2009-05-29 2017-11-28 Soraa Laser Diode, Inc. Laser light source for a vehicle
CN102449550B (en) * 2009-05-29 2016-06-08 天空激光二极管有限公司 A kind of optical projection system
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
CN102460739A (en) * 2009-06-05 2012-05-16 加利福尼亚大学董事会 Long wavelength nonpolar and semipolar (al,ga,in)n based laser diodes
CA2773033C (en) 2009-09-04 2016-10-11 Mpex Pharmaceuticals, Inc. Use of aerosolized levofloxacin for treating cystic fibrosis
US20150004435A1 (en) * 2009-09-17 2015-01-01 National Chiao Tung University Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
FR2968301B1 (en) 2010-09-23 2020-05-01 Gelest Technologies, Inc. ALCOXYSILANE DERIVATIVES OF N-ACYL GROUP AMINO ACIDS, N-ACYL GROUP DIPEPTIDES, N-ACYL GROUP TRIPEPTIDES, AND STABLE OIL-IN-WATER PARTICLES AND FORMULATIONS USING THEM
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8399367B2 (en) * 2011-06-28 2013-03-19 Nitride Solutions, Inc. Process for high-pressure nitrogen annealing of metal nitrides
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
WO2013141617A1 (en) 2012-03-21 2013-09-26 Seoul Opto Device Co., Ltd. Method of fabricating non-polar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same
JP5699983B2 (en) * 2012-04-27 2015-04-15 住友電気工業株式会社 Method for fabricating gallium nitride based semiconductor, method for fabricating group III nitride semiconductor device, and group III nitride semiconductor device
US9196709B2 (en) * 2013-02-01 2015-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming semiconductor regions in trenches
JP6098259B2 (en) * 2013-03-19 2017-03-22 豊田合成株式会社 Manufacturing method of semiconductor device
KR102061696B1 (en) 2013-11-05 2020-01-03 삼성전자주식회사 Semipolar nitride semiconductor structure and method of fabricating the same
US9787963B2 (en) 2015-10-08 2017-10-10 Soraa Laser Diode, Inc. Laser lighting having selective resolution
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
US10222474B1 (en) 2017-12-13 2019-03-05 Soraa Laser Diode, Inc. Lidar systems including a gallium and nitrogen containing laser light source
US10551728B1 (en) 2018-04-10 2020-02-04 Soraa Laser Diode, Inc. Structured phosphors for dynamic lighting
WO2020018709A1 (en) * 2018-07-18 2020-01-23 The Regents Of The University Of California Method for the fabrication of electrically-conductive semiconductor layers
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
WO2022222046A1 (en) * 2021-04-20 2022-10-27 华为技术有限公司 Semiconductor device, electronic device, and method for forming semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060073680A1 (en) * 2004-08-20 2006-04-06 Jung Han Epitaxial growth of aligned algainn nanowires by metal-organic chemical vapor deposition

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
CN1159750C (en) 1997-04-11 2004-07-28 日亚化学工业株式会社 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
US6849472B2 (en) 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
WO1999066565A1 (en) 1998-06-18 1999-12-23 University Of Florida Method and apparatus for producing group-iii nitrides
JP3883303B2 (en) 1998-10-09 2007-02-21 独立行政法人科学技術振興機構 Method for producing p-type group III nitride semiconductor
JP3592553B2 (en) 1998-10-15 2004-11-24 株式会社東芝 Gallium nitride based semiconductor device
US20010047751A1 (en) 1998-11-24 2001-12-06 Andrew Y. Kim Method of producing device quality (a1) ingap alloys on lattice-mismatched substrates
JP4006537B2 (en) 1999-10-19 2007-11-14 日本電信電話株式会社 Method for manufacturing P-type nitride semiconductor
JP2001308017A (en) * 2000-04-24 2001-11-02 Sony Corp Method for manufacturing p-type iii-v nitride compound semiconductor, and method for manufacturing semiconductor element
JP3882539B2 (en) * 2000-07-18 2007-02-21 ソニー株式会社 Semiconductor light emitting device, method for manufacturing the same, and image display device
US6599362B2 (en) 2001-01-03 2003-07-29 Sandia Corporation Cantilever epitaxial process
US6635904B2 (en) * 2001-03-29 2003-10-21 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US6479313B1 (en) * 2001-05-25 2002-11-12 Kopin Corporation Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes
US7501023B2 (en) 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US7105865B2 (en) 2001-09-19 2006-09-12 Sumitomo Electric Industries, Ltd. AlxInyGa1−x−yN mixture crystal substrate
JP2004111514A (en) 2002-09-17 2004-04-08 Sanyo Electric Co Ltd Nitride semiconductor light emitting element and its manufacturing method
AU2003256522A1 (en) * 2002-12-16 2004-07-29 The Regents Of University Of California Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy
US7186302B2 (en) * 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
JP2006521984A (en) * 2003-03-18 2006-09-28 クリスタル フォトニクス，インコーポレイテッド Method for fabricating a group III nitride device and the device so fabricated
US6847057B1 (en) 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
US20050218414A1 (en) * 2004-03-30 2005-10-06 Tetsuzo Ueda 4H-polytype gallium nitride-based semiconductor device on a 4H-polytype substrate
EP1787330A4 (en) * 2004-05-10 2011-04-13 Univ California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7432142B2 (en) 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
JP4548117B2 (en) * 2004-12-28 2010-09-22 ソニー株式会社 Semiconductor light emitting device manufacturing method, integrated semiconductor light emitting device manufacturing method, image display device manufacturing method, and lighting device manufacturing method
KR101145755B1 (en) 2005-03-10 2012-05-16 재팬 사이언스 앤드 테크놀로지 에이젼시 Technique for the growth of planar semi-polar gallium nitride
TWI455181B (en) * 2005-06-01 2014-10-01 Univ California Technique for the growth and fabrication of semipolar (ga,al,in,b)n thin films, heterostructures, and devices
KR20080040709A (en) 2005-07-13 2008-05-08 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Lateral growth method for defect reduction of semipolar nitride films

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060073680A1 (en) * 2004-08-20 2006-04-06 Jung Han Epitaxial growth of aligned algainn nanowires by metal-organic chemical vapor deposition

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