JP5668650B2 - 液処理装置、液処理方法及び記憶媒体 - Google Patents

液処理装置、液処理方法及び記憶媒体 Download PDF

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Publication number
JP5668650B2
JP5668650B2 JP2011196265A JP2011196265A JP5668650B2 JP 5668650 B2 JP5668650 B2 JP 5668650B2 JP 2011196265 A JP2011196265 A JP 2011196265A JP 2011196265 A JP2011196265 A JP 2011196265A JP 5668650 B2 JP5668650 B2 JP 5668650B2
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substrate
processed
wafer
liquid processing
cover member
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JP2012084856A (ja
JP2012084856A5 (enExample
Inventor
治郎 東島
治郎 東島
天野　嘉文
嘉文 天野
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011196265A 2010-09-13 2011-09-08 液処理装置、液処理方法及び記憶媒体 Active JP5668650B2 (ja)

Priority Applications (1)

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JP2011196265A JP5668650B2 (ja) 2010-09-13 2011-09-08 液処理装置、液処理方法及び記憶媒体

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JP2010204767 2010-09-13
JP2010204767 2010-09-13
JP2011196265A JP5668650B2 (ja) 2010-09-13 2011-09-08 液処理装置、液処理方法及び記憶媒体

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JP2012084856A JP2012084856A (ja) 2012-04-26
JP2012084856A5 JP2012084856A5 (enExample) 2013-12-26
JP5668650B2 true JP5668650B2 (ja) 2015-02-12

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US (1) US8887741B2 (enExample)
JP (1) JP5668650B2 (enExample)
KR (1) KR101590661B1 (enExample)
TW (1) TWI483333B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019168767A1 (en) * 2018-02-28 2019-09-06 Lam Research Corporation Flow assisted dynamic seal for high-convection, continuous-rotation plating
KR20190116937A (ko) * 2018-04-05 2019-10-15 도쿄엘렉트론가부시키가이샤 접합 시스템 및 접합 방법

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JP5854668B2 (ja) * 2011-07-07 2016-02-09 芝浦メカトロニクス株式会社 気液混合流体生成装置、気液混合流体生成方法、処理装置及び処理方法
JP5996329B2 (ja) * 2012-08-20 2016-09-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および基板処理方法
TWI576938B (zh) * 2012-08-17 2017-04-01 斯克林集團公司 基板處理裝置及基板處理方法
JP6100487B2 (ja) 2012-08-20 2017-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP5951444B2 (ja) * 2012-10-25 2016-07-13 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP6017262B2 (ja) 2012-10-25 2016-10-26 東京エレクトロン株式会社 基板処理装置および基板処理方法
KR20150122902A (ko) * 2014-04-23 2015-11-03 주식회사 제우스 기판 처리온도 모니터링장치와 기판 처리온도 모니터링방법
JP6329428B2 (ja) * 2014-05-09 2018-05-23 東京エレクトロン株式会社 基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体
CN104183524A (zh) * 2014-08-27 2014-12-03 上海华力微电子有限公司 一种晶圆边缘的刻蚀装置
JP6392035B2 (ja) * 2014-09-02 2018-09-19 東京エレクトロン株式会社 基板液処理装置
DE112015006068B4 (de) * 2015-01-28 2025-02-13 Mitsubishi Electric Corporation Randbelichtungsvorrichtung
CN106252258B (zh) 2015-06-15 2018-12-07 株式会社思可林集团 基板处理装置
JP6845696B2 (ja) * 2016-02-25 2021-03-24 芝浦メカトロニクス株式会社 基板処理装置、基板処理方法及び基板の製造方法
JP6443582B2 (ja) * 2016-03-10 2018-12-26 三菱電機株式会社 基板吸着ステージ、基板処理装置、基板処理方法
JP6784546B2 (ja) * 2016-09-08 2020-11-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US10497667B2 (en) * 2017-09-26 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for bond wave propagation control
CN109955420B (zh) * 2017-12-14 2021-05-18 奇景光电股份有限公司 模具分离装置及其分离方法
JP2021036061A (ja) * 2017-12-15 2021-03-04 東京エレクトロン株式会社 基板液処理装置
JP7082514B2 (ja) * 2018-04-04 2022-06-08 株式会社Kelk 流体加熱装置
JP7166089B2 (ja) * 2018-06-29 2022-11-07 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
JP7110053B2 (ja) * 2018-09-27 2022-08-01 東京エレクトロン株式会社 基板処理装置
JP7242392B2 (ja) * 2019-04-16 2023-03-20 東京エレクトロン株式会社 基板処理装置
JP7314634B2 (ja) * 2019-06-11 2023-07-26 東京エレクトロン株式会社 塗布装置及び塗布方法
JP7390837B2 (ja) * 2019-09-27 2023-12-04 東京エレクトロン株式会社 基板処理方法および基板処理装置
CN112670207B (zh) * 2020-12-21 2023-10-31 长江存储科技有限责任公司 晶边处理设备及待处理晶圆结构的处理方法
JP7719651B2 (ja) * 2021-07-15 2025-08-06 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置、基板洗浄システム、基板処理システム、基板洗浄方法および基板処理方法
JP7778016B2 (ja) * 2022-03-23 2025-12-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2024044286A (ja) * 2022-09-21 2024-04-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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JP4950786B2 (ja) * 2007-07-11 2012-06-13 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP4943382B2 (ja) 2008-06-05 2012-05-30 東京エレクトロン株式会社 液処理装置および液処理方法
JP4943381B2 (ja) * 2008-06-05 2012-05-30 東京エレクトロン株式会社 液処理装置
JP5355951B2 (ja) 2008-07-24 2013-11-27 東京エレクトロン株式会社 液処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019168767A1 (en) * 2018-02-28 2019-09-06 Lam Research Corporation Flow assisted dynamic seal for high-convection, continuous-rotation plating
US10612151B2 (en) 2018-02-28 2020-04-07 Lam Research Corporation Flow assisted dynamic seal for high-convection, continuous-rotation plating
KR20190116937A (ko) * 2018-04-05 2019-10-15 도쿄엘렉트론가부시키가이샤 접합 시스템 및 접합 방법

Also Published As

Publication number Publication date
KR101590661B1 (ko) 2016-02-01
JP2012084856A (ja) 2012-04-26
KR20120028212A (ko) 2012-03-22
US20120064256A1 (en) 2012-03-15
TW201218299A (en) 2012-05-01
TWI483333B (zh) 2015-05-01
US8887741B2 (en) 2014-11-18

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