JP5645239B2 - インバータ及びそれを含む論理回路 - Google Patents
インバータ及びそれを含む論理回路 Download PDFInfo
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- JP5645239B2 JP5645239B2 JP2009070507A JP2009070507A JP5645239B2 JP 5645239 B2 JP5645239 B2 JP 5645239B2 JP 2009070507 A JP2009070507 A JP 2009070507A JP 2009070507 A JP2009070507 A JP 2009070507A JP 5645239 B2 JP5645239 B2 JP 5645239B2
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- 239000000463 material Substances 0.000 claims description 46
- 230000004888 barrier function Effects 0.000 claims description 33
- 239000010409 thin film Substances 0.000 claims description 3
- 229910021478 group 5 element Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 212
- 239000004065 semiconductor Substances 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 239000002356 single layer Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 102100036464 Activated RNA polymerase II transcriptional coactivator p15 Human genes 0.000 description 5
- 101000713904 Homo sapiens Activated RNA polymerase II transcriptional coactivator p15 Proteins 0.000 description 5
- 229910004444 SUB1 Inorganic materials 0.000 description 5
- 229910005265 GaInZnO Inorganic materials 0.000 description 4
- 229910004438 SUB2 Inorganic materials 0.000 description 4
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 4
- 101150018444 sub2 gene Proteins 0.000 description 4
- 229910007717 ZnSnO Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Dram (AREA)
Description
B2,B2’ バリヤ層
C’ チャンネル物質層
C1a,C1a’,C1b,C1b’,C1c,C1c’ 第1チャンネル層
C2a,C2a’,C2b,C2b’,C2c,C2c’ 第2チャンネル層
D1,D1’ 第1ドレイン電極
D2,D2’ 第2ドレイン電極
G1,G1’ 第1ゲート電極
G2,G2’ 第2ゲート電極
GI1,GI1’ ゲート絶縁層
Id ドレイン電圧
M1 ソース/ドレイン電極層
R1 低抵抗領域
S1,S1’ 第1ソース電極
S2,S2’ 第2ソース電極
SUB1,SUB2 基板
SS2 積層構造物
T1,T1a,T1a’,T1b,T1c,T1c’ 負荷トランジスタ
T2,T2a,T2a’,T2b,T2c,T2c’ 駆動トランジスタ
VI 入力電圧
Vin 入力端子
VO 出力電圧
Vout 出力端子
Vg ゲート電圧
VDD 電源
Claims (13)
- 第1酸化物層をチャンネル層として有する空乏型負荷トランジスタと、
前記負荷トランジスタと連結され、第2酸化物層をチャンネル層として有する増加型駆動トランジスタとを備え、
前記第2酸化物層と、それに対応するソース電極及びドレイン電極との間に、前記第2酸化物層より仕事関数が大きなバリヤ層をさらに具備し、
前記バリヤ層は、Ti酸化物層、Cu酸化物層、Ni酸化物層、TiドーピングされたNi酸化物層、ZnO系酸化物層、I族,II族及びV族元素のうち少なくとも一つがドーピングされたZnO系酸化物層、及びAgがドーピングされたZnO系酸化物層のうち一つである
ことを特徴とするインバータ。 - 前記第1酸化物層と前記第2酸化物層は、同一層であることを特徴とする請求項1に記載のインバータ。
- 前記第1酸化物層と前記第2酸化物層は、互いに異なるキャリア濃度を有することを特徴とする請求項1に記載のインバータ。
- 前記第2チャンネル層のキャリア濃度は、前記第1チャンネル層のキャリア濃度より低いことを特徴とする請求項3に記載のインバータ。
- 前記第1酸化物層及び前記第2酸化物層のうち少なくとも1層は、ZnO系の物質を含むことを特徴とする請求項1に記載のインバータ。
- 前記負荷トランジスタ及び前記駆動トランジスタのうち少なくとも一つは、ボトムゲート構造を有する薄膜トランジスタであることを特徴とする請求項1に記載のインバータ。
- 前記負荷トランジスタ及び前記駆動トランジスタのうち少なくとも一つは、トップゲート構造を有する薄膜トランジスタであることを特徴とする請求項1に記載のインバータ。
- 請求項1ないし請求項7のうちいずれか1項に記載のインバータを含む論理回路。
- 前記論理回路は、NAND回路、NOR回路、エンコーダ、デコーダ、マルチプレクサ、デマルチプレクサ及びセンスアンプのうち少なくとも一つを含むことを特徴とする請求項8に記載の論理回路。
- 単一チャンネル物質層でプラズマで処理された領域を第1チャンネル物質層として有する空乏型負荷トランジスタと、
前記負荷トランジスタと連結され、前記単一チャンネル物質層の残りの領域を第2チャンネル物質層として有する増加型駆動トランジスタとを備えることを特徴とするインバータ。 - 前記第1チャンネル物質層はArプラズマで処理されたことを特徴とする請求項10に記載のインバータ。
- 前記第1チャンネル物質層と前記第2チャンネル物質層がZnO系の物質を含むことを特徴とする請求項10に記載のインバータ。
- 請求項10に記載のインバータを備えることを特徴とする論理回路。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0029327 | 2008-03-28 | ||
KR20080029327A KR101490112B1 (ko) | 2008-03-28 | 2008-03-28 | 인버터 및 그를 포함하는 논리회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009246362A JP2009246362A (ja) | 2009-10-22 |
JP5645239B2 true JP5645239B2 (ja) | 2014-12-24 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009070507A Active JP5645239B2 (ja) | 2008-03-28 | 2009-03-23 | インバータ及びそれを含む論理回路 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7847287B2 (ja) |
JP (1) | JP5645239B2 (ja) |
KR (1) | KR101490112B1 (ja) |
CN (1) | CN101546768B (ja) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5294651B2 (ja) * | 2007-05-18 | 2013-09-18 | キヤノン株式会社 | インバータの作製方法及びインバータ |
TWI570937B (zh) | 2008-07-31 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
JP5480554B2 (ja) * | 2008-08-08 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI500160B (zh) * | 2008-08-08 | 2015-09-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
EP2172977A1 (en) | 2008-10-03 | 2010-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR20230106737A (ko) | 2008-10-03 | 2023-07-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 표시장치를 구비한 전자기기 |
CN103928476A (zh) | 2008-10-03 | 2014-07-16 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
KR102469154B1 (ko) | 2008-10-24 | 2022-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
US8106400B2 (en) | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101631454B1 (ko) * | 2008-10-31 | 2016-06-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 논리회로 |
KR101522400B1 (ko) * | 2008-11-10 | 2015-05-21 | 삼성전자주식회사 | 인버터 및 그를 포함하는 논리소자 |
TW201023341A (en) * | 2008-12-12 | 2010-06-16 | Ind Tech Res Inst | Integrated circuit structure |
JP5504008B2 (ja) | 2009-03-06 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI535023B (zh) * | 2009-04-16 | 2016-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
EP2256814B1 (en) | 2009-05-29 | 2019-01-16 | Semiconductor Energy Laboratory Co, Ltd. | Oxide semiconductor device and method for manufacturing the same |
KR102386147B1 (ko) | 2009-07-31 | 2022-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 그 형성 방법 |
WO2011013523A1 (en) | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101827687B1 (ko) | 2009-09-24 | 2018-02-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 구동 회로, 상기 구동 회로를 포함하는 표시 장치, 및 상기 표시 장치를 포함하는 전자 기기 |
CN102576738B (zh) | 2009-10-16 | 2015-06-03 | 株式会社半导体能源研究所 | 逻辑电路和半导体器件 |
WO2011046048A1 (en) | 2009-10-16 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101930682B1 (ko) | 2009-10-29 | 2018-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
MY163862A (en) | 2009-10-30 | 2017-10-31 | Semiconductor Energy Lab | Logic circuit and semiconductor device |
CN102576708B (zh) | 2009-10-30 | 2015-09-23 | 株式会社半导体能源研究所 | 半导体装置 |
KR101754704B1 (ko) | 2009-11-20 | 2017-07-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치 |
CN102598266B (zh) * | 2009-11-20 | 2015-04-22 | 株式会社半导体能源研究所 | 半导体装置 |
KR101911382B1 (ko) * | 2009-11-27 | 2018-10-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102068463B1 (ko) | 2009-11-28 | 2020-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 적층 산화물 재료, 반도체 장치 및 반도체 장치의 제작 방법 |
KR101714831B1 (ko) | 2009-11-28 | 2017-03-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011065210A1 (en) | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
WO2011068028A1 (en) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, semiconductor device, and method for manufacturing the same |
CN102714180B (zh) | 2009-12-11 | 2015-03-25 | 株式会社半导体能源研究所 | 非易失性锁存电路和逻辑电路以及使用它们的半导体器件 |
CN104600105B (zh) | 2009-12-11 | 2018-05-08 | 株式会社半导体能源研究所 | 半导体装置 |
JP2011155061A (ja) * | 2010-01-26 | 2011-08-11 | Sony Corp | 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置、電子機器 |
WO2011108346A1 (en) * | 2010-03-05 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of oxide semiconductor film and manufacturing method of transistor |
US20130214279A1 (en) * | 2010-04-30 | 2013-08-22 | Jun Nishimura | Circuit board and display device |
WO2011135920A1 (ja) * | 2010-04-30 | 2011-11-03 | シャープ株式会社 | 回路基板、表示装置および回路基板の製造方法 |
WO2012002236A1 (en) * | 2010-06-29 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Wiring board, semiconductor device, and manufacturing methods thereof |
US8508276B2 (en) | 2010-08-25 | 2013-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including latch circuit |
JP2012094853A (ja) * | 2010-09-30 | 2012-05-17 | Kobe Steel Ltd | 配線構造 |
TWI562379B (en) | 2010-11-30 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing semiconductor device |
JP5852874B2 (ja) * | 2010-12-28 | 2016-02-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI525614B (zh) | 2011-01-05 | 2016-03-11 | 半導體能源研究所股份有限公司 | 儲存元件、儲存裝置、及信號處理電路 |
RU2605560C2 (ru) * | 2011-01-27 | 2016-12-20 | Витрифлекс, Инк. | Неорганический многослойный пакет и относящиеся к нему способы и композиции |
TWI567735B (zh) | 2011-03-31 | 2017-01-21 | 半導體能源研究所股份有限公司 | 記憶體電路,記憶體單元,及訊號處理電路 |
KR102081792B1 (ko) | 2011-05-19 | 2020-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 연산회로 및 연산회로의 구동방법 |
JP5947099B2 (ja) * | 2011-05-20 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8673426B2 (en) * | 2011-06-29 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit |
US10026847B2 (en) * | 2011-11-18 | 2018-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, method for manufacturing semiconductor element, and semiconductor device including semiconductor element |
CN102646683B (zh) * | 2012-02-02 | 2014-09-24 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法 |
US8754693B2 (en) | 2012-03-05 | 2014-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Latch circuit and semiconductor device |
US9058892B2 (en) | 2012-03-14 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and shift register |
US8873308B2 (en) | 2012-06-29 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit |
JP6013084B2 (ja) * | 2012-08-24 | 2016-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6329843B2 (ja) | 2013-08-19 | 2018-05-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN103792746A (zh) * | 2014-01-27 | 2014-05-14 | 北京京东方光电科技有限公司 | 一种阵列基板、其制备方法及显示装置 |
FI20150334A (fi) * | 2015-01-14 | 2016-07-15 | Artto Mikael Aurola | Paranneltu puolijohdekokoonpano |
CN104752343B (zh) * | 2015-04-14 | 2017-07-28 | 深圳市华星光电技术有限公司 | 双栅极氧化物半导体tft基板的制作方法及其结构 |
CN105006487A (zh) * | 2015-07-14 | 2015-10-28 | 北京大学 | 顶栅自对准金属氧化物半导体薄膜晶体管及制备方法 |
CN206505923U (zh) * | 2015-10-29 | 2017-09-19 | 陆磊 | 一种薄膜晶体管及显示器面板 |
CN105470310A (zh) * | 2016-01-21 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板和显示装置 |
CN106783733B (zh) | 2016-12-13 | 2019-10-22 | 上海天马微电子有限公司 | 显示面板、显示装置、阵列基板及其制作方法 |
KR102127756B1 (ko) * | 2018-01-02 | 2020-07-09 | 청주대학교 산학협력단 | 전극가변 박막 트랜지스터 논리회로 및 그 제조방법 |
US20200006570A1 (en) * | 2018-06-29 | 2020-01-02 | Intel Corporation | Contact structures for thin film transistor devices |
CN113707606A (zh) * | 2021-09-15 | 2021-11-26 | 复旦大学 | 一种基于晶圆级二维材料的反相器、制备方法及逻辑电路 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2337958A1 (fr) * | 1976-01-07 | 1977-08-05 | Comp Generale Electricite | Dispositif laser a gaz |
US4138782A (en) * | 1976-09-16 | 1979-02-13 | International Business Machines Corporation | Inverter with improved load line characteristic |
GB9208324D0 (en) * | 1992-04-15 | 1992-06-03 | British Tech Group | Semiconductor devices |
US5625199A (en) * | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
WO2002016679A1 (fr) * | 2000-08-18 | 2002-02-28 | Tohoku Techno Arch Co., Ltd. | Matiere semi-conductrice polycristalline |
US8138364B2 (en) * | 2001-08-27 | 2012-03-20 | Northwestern University | Transparent conducting oxide thin films and related devices |
KR100844004B1 (ko) * | 2002-03-15 | 2008-07-04 | 엘지디스플레이 주식회사 | 유기전계발광 소자용 투명 도전막의 제조 방법 |
KR101023491B1 (ko) | 2002-05-21 | 2011-03-21 | 더 스테이트 오브 오레곤 액팅 바이 앤드 쓰루 더 스테이트 보드 오브 하이어 에쥬케이션 온 비해프 오브 오레곤 스테이트 유니버시티 | 트랜지스터 구조 및 그 제조 방법 |
JP4661065B2 (ja) | 2004-03-22 | 2011-03-30 | セイコーエプソン株式会社 | 相補型有機半導体装置 |
JP4415377B2 (ja) * | 2004-06-24 | 2010-02-17 | セイコーエプソン株式会社 | 光源駆動方法およびプロジェクタ |
JP5053537B2 (ja) * | 2004-11-10 | 2012-10-17 | キヤノン株式会社 | 非晶質酸化物を利用した半導体デバイス |
JP5043835B2 (ja) * | 2005-06-17 | 2012-10-10 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 光電子応用のための(Al,Ga,In)NとZnOの直接ウェーハ・ボンディング構造とその作製方法 |
TWI316760B (en) * | 2006-05-03 | 2009-11-01 | Ind Tech Res Inst | Circuit structure with doubl-gate organic thin film transistors and application thereof |
KR100801961B1 (ko) | 2006-05-26 | 2008-02-12 | 한국전자통신연구원 | 듀얼 게이트 유기트랜지스터를 이용한 인버터 |
EP2025004A1 (en) * | 2006-06-02 | 2009-02-18 | Kochi Industrial Promotion Center | Semiconductor device including an oxide semiconductor thin film layer of zinc oxide and manufacturing method thereof |
JP4609797B2 (ja) * | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP5164357B2 (ja) * | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP5294651B2 (ja) * | 2007-05-18 | 2013-09-18 | キヤノン株式会社 | インバータの作製方法及びインバータ |
KR101270172B1 (ko) * | 2007-08-29 | 2013-05-31 | 삼성전자주식회사 | 산화물 박막 트랜지스터 및 그 제조 방법 |
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