JP5644160B2 - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

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Publication number
JP5644160B2
JP5644160B2 JP2010087925A JP2010087925A JP5644160B2 JP 5644160 B2 JP5644160 B2 JP 5644160B2 JP 2010087925 A JP2010087925 A JP 2010087925A JP 2010087925 A JP2010087925 A JP 2010087925A JP 5644160 B2 JP5644160 B2 JP 5644160B2
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JP
Japan
Prior art keywords
semiconductor laser
layer
solder
laser device
submount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010087925A
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English (en)
Japanese (ja)
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JP2011222627A (ja
JP2011222627A5 (https=
Inventor
義浩 久
義浩 久
田中　秀幸
秀幸 田中
正和 八代
正和 八代
則善 幸長
則善 幸長
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2010087925A priority Critical patent/JP5644160B2/ja
Priority to TW099147226A priority patent/TWI438991B/zh
Priority to CN201110083417.5A priority patent/CN102214894B/zh
Publication of JP2011222627A publication Critical patent/JP2011222627A/ja
Publication of JP2011222627A5 publication Critical patent/JP2011222627A5/ja
Application granted granted Critical
Publication of JP5644160B2 publication Critical patent/JP5644160B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Semiconductor Lasers (AREA)
  • Die Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2010087925A 2010-04-06 2010-04-06 半導体レーザ装置 Active JP5644160B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010087925A JP5644160B2 (ja) 2010-04-06 2010-04-06 半導体レーザ装置
TW099147226A TWI438991B (zh) 2010-04-06 2010-12-31 Semiconductor laser device
CN201110083417.5A CN102214894B (zh) 2010-04-06 2011-04-02 半导体激光器装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010087925A JP5644160B2 (ja) 2010-04-06 2010-04-06 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2011222627A JP2011222627A (ja) 2011-11-04
JP2011222627A5 JP2011222627A5 (https=) 2013-04-18
JP5644160B2 true JP5644160B2 (ja) 2014-12-24

Family

ID=44746071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010087925A Active JP5644160B2 (ja) 2010-04-06 2010-04-06 半導体レーザ装置

Country Status (3)

Country Link
JP (1) JP5644160B2 (https=)
CN (1) CN102214894B (https=)
TW (1) TWI438991B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8867582B2 (en) 2012-04-04 2014-10-21 Osram Opto Semiconductors Gmbh Laser diode assembly
DE102012102305B4 (de) * 2012-03-19 2025-07-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
CN104067387B (zh) * 2012-03-22 2016-12-14 三菱电机株式会社 半导体装置及其制造方法
DE102012103160A1 (de) 2012-04-12 2013-10-17 Osram Opto Semiconductors Gmbh Laserdiodenvorrichtung
US9008138B2 (en) 2012-04-12 2015-04-14 Osram Opto Semiconductors Gmbh Laser diode device
JP2014209508A (ja) * 2013-04-16 2014-11-06 住友電気工業株式会社 はんだ付半導体デバイス、実装はんだ付半導体デバイス、はんだ付半導体デバイスの製造方法および実装方法
JP6572803B2 (ja) * 2016-03-09 2019-09-11 三菱電機株式会社 半導体レーザ装置
CN119327352A (zh) * 2024-10-17 2025-01-21 河南黄河旋风股份有限公司 合成中间带孔复合片所用组合件及其合成方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5559817A (en) * 1994-11-23 1996-09-24 Lucent Technologies Inc. Complaint layer metallization
JP3607220B2 (ja) * 2001-06-06 2005-01-05 松下電器産業株式会社 半導体レーザ装置
JP3882712B2 (ja) * 2002-08-09 2007-02-21 住友電気工業株式会社 サブマウントおよび半導体装置
JP2004327982A (ja) * 2003-04-11 2004-11-18 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2005190520A (ja) * 2003-12-24 2005-07-14 Sankyo Seiki Mfg Co Ltd 光ヘッド装置
JP2005303169A (ja) * 2004-04-15 2005-10-27 Renesas Technology Corp 半導体装置およびその製造方法
JP2006024812A (ja) * 2004-07-09 2006-01-26 Sony Corp 半導体素子搭載のリードフレームとそれを用いた半導体装置
JP4513513B2 (ja) * 2004-11-09 2010-07-28 株式会社村田製作所 電子部品の製造方法
JP2006319109A (ja) * 2005-05-12 2006-11-24 Matsushita Electric Ind Co Ltd 半導体装置用リードフレームおよびそれを用いた半導体装置用パッケージとその製造方法
JP5095091B2 (ja) * 2005-06-08 2012-12-12 シャープ株式会社 レーザ装置の製造方法
JP4740030B2 (ja) * 2005-06-08 2011-08-03 シャープ株式会社 レーザ装置の製造方法
CN100592585C (zh) * 2006-03-28 2010-02-24 三菱电机株式会社 光学元件用组件及使用该组件的光学半导体器件

Also Published As

Publication number Publication date
JP2011222627A (ja) 2011-11-04
CN102214894A (zh) 2011-10-12
CN102214894B (zh) 2013-07-24
TW201140971A (en) 2011-11-16
TWI438991B (zh) 2014-05-21

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