JP2014528646A - 金属成形体とパワー半導体の間に、太径ワイヤ又はストリップとのボンディングに使用する接続部を形成する方法 - Google Patents

金属成形体とパワー半導体の間に、太径ワイヤ又はストリップとのボンディングに使用する接続部を形成する方法 Download PDF

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JP2014528646A
JP2014528646A JP2014533779A JP2014533779A JP2014528646A JP 2014528646 A JP2014528646 A JP 2014528646A JP 2014533779 A JP2014533779 A JP 2014533779A JP 2014533779 A JP2014533779 A JP 2014533779A JP 2014528646 A JP2014528646 A JP 2014528646A
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molded body
bonding
power semiconductor
foil
semiconductor chip
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JP5955392B2 (ja
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ベッカー，マルティン
アイゼレ，ロナルト
オステルヴァル
オステルヴァルト，フランク
ルヅキ，ヤーチェク
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ダンフォス・シリコン・パワー・ゲーエムベーハー
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Abstract

本発明は、上部側電位面を有するパワー半導体チップを太径ワイヤ又はストリップに接続する方法に関する。この方法は、上部側電位面の形状に対応する金属成形体を用意するステップと、上部側電位面又は金属成形体に結合層を施すステップと、電位面に成形体を取り付けて、材料適合する導電性化合物を加えた後で、導電性化合物が加えられていない成形体の上部側に太径ワイヤボンドをボンディングするステップと、を含む。

Description

本発明は、上部側電位面を有するパワー半導体チップを太径ワイヤ及びストリップに接続する方法に関する。
長寿命かつ強固なパワー導体モジュールを開発するには、特に半導体の上部及び下部接続部（上部側及び下部側）が高い熱的要件及び電気的要件を有する。通常、半導体の下部側は、はんだ付け接続によって接続され、或いは部分的に焼結接続又は拡散はんだ付け接続によっても接続される。
通常、半導体の上部側は、太径アルミワイヤのボンディング工程に合わせて最適化された金属化層又は金属層を含む。半導体は、上部側及び下部側にこのような非常に変形しやすい金属化層が存在するにも関わらず、電気損失を減少させるために薄くなり続けている。現在では、市販のパワー半導体は総厚が７０μｍである。研究機関は、わずか１０μｍという極端な厚みの最初のウェハを既に提示している。
上部側のチップ接続部は、パワーモジュールの寿命限界に非常に大きな影響を与える。半導体の上部側のアルミワイヤの不具合は制限要因であるため、チップ下部側の焼結接続を非常に強固にしても、モジュールの寿命はわずかしか延びない。
Ａｌボンディングは、長年にわたり、パワーエレクトロニクスの製造ラインにおける確立された技術である。この接続部の平均寿命は、ボンディング工程を絶えず最適化することによって延びてきた。しかしながら、この高レベルなアルミ溶接接続の応力性はほぼ物理的限界にあるので、平均寿命を大きく延ばすには、設計及びボンディング技術における新たな概念が必要である。この要件は、既に現在、半導体の下部側の焼結技術が（はんだ付け技術に比べて）平均寿命という因子の２桁成長に寄与しているという事実によっても裏付けられる。
さらに、工程中には、７０μｍの薄さの半導体の取り扱いに問題が生じる（そしてこれらの問題はさらに薄い半導体の分野では大きな問題になると予想される）。従って、製造及びテスト工程のパラメーター化、並びに概念構成の両方に関し、非常に薄いシリコン層では製造における収益リスクが増加する。破砕のリスクは、熱機械的応力によって生じるだけでなく、製造工程中の軽負荷（例えば、ウェハレベルでの高電流テストのために接触針を装着すること）によっても生じる。
そこで、本発明は、（単複の）上部側電位面上の接点を改善することにより、パワーモジュールの寿命、具体的にはパワー半導体チップの寿命を向上させることを目的とする。同時に、より安定した破砕リスクの少ない設計によって収益が伸びるようにする。
本発明によれば、この課題は主クレームの特徴により解決される。下位クレームには、有利な実施形態を示す。この上部側接続部のための新たな技術への変更を実現するために、まず必要なパワーモジュールの設計修正について説明する。
これらの修正により、太径銅ワイヤに接続する上部側のボンディング技術の変更が可能になり、これにより負荷サイクル耐久性が大幅に増加する。さらに、これらの修正により、半導体の熱機械的応力及び製造工程からの機械的応力によって生じる破砕のリスクも減少する。
この変更は、半導体の少なくとも上方に、及び好ましくは下方にも金属層又は成形体を配置して、半導体が熱機械的応力を対称的に受けるようにすることによってもたらされる。
さらに、これらの薄層又は成形体は、例えば摩擦接触テスト工程（ウェハレベルでの高電流テスト）により、表面の特に電位面にわたって機械的保護を形成する。これにより、半導体の上部側接続を完了させる前に半導体の安全な電気テストが可能になる。この電気テストでは、半導体の微細表面構造に損傷を与えるリスクを伴わずに、半導体に結合された金属層の表面に特殊なばね具を接触させる。
本発明は、単一のパワー半導体チップ、基板上におけるパワー半導体の配置、又は一群の半導体部品を含む半導体ウェハに関する。個々のチップ（図７、詳細部１２）、配置及び完成したウェハアセンブリ（図３、詳細部６）の上部側に、約３０μｍ〜３００μｍの厚みの金属製の（好ましくは、Ｃｕ、Ａｇ、Ａｕ、Ａｌ、Ｍｏ、Ｗ及びこれらの合金などの導電性及び熱伝導性の高い）いわゆる成形体４、５を設ける。３０μｍ前後の範囲内の薄い半導体では、３０μｍ〜４０μｍの範囲内の成形体を使用し、１５０μｍ〜２００μｍの範囲内の厚い半導体チップでは、１００μｍ〜１５０μｍの範囲内の若干厚めの成形体を使用する。
この成形体４、５を、低温焼結技術（Ａｇ層７）（又は拡散はんだ付け又は接着）によって半導体１２の金属化層８に取り付ける。この成形体は、個々の半導体１２の寸法にまでは広がらないが、実施形態によっては上部側の部品を損ねることがある。
上部側接触面８に必要な成形体４、５は、金属ホイル３をパターニングすることによって形成され、個々の半導体チップ、パワー半導体の配置又は完成したウェハアセンブリ６の焼結準備が整った（単複の）表面にこれらを転写するために、結合層２（図１）を有する搬送ホイルにより搬送される。
この目的で、上部側接点に必要な位置及び範囲を金属ホイルの構造に転写する。この処理は、例えばリソグラフィー及びエッチングにより、又はレーザー切断（或いはフライス加工）及び削屑の除去により行われる（図２）。
好ましい実施形態では、成形体４、５を酸化防止層でさらに被覆することができる（例えばＮｉＡｕ層システム、図８、詳細部１０）。
この接続では、搬送ホイルが、結合において成形体が互いに正確な位置で確実に取り付けられるようにする役に立つ。
ここで、接触面の境界内において、結合相手である上部側接点を焼結可能な銀の結合層７により被覆する。或いは、成形体４、５上に焼結銀を配置することも可能である。
成形体を取り付けた搬送ホイルを（単複の）パワー半導体上に配置する際には、成形体４、５を搬送ホイル１に結合することにより、全ての所定の位置が確実に同時に覆われるようにする。これにより、複数の半導体の場合にも、成形体によって合理的かつコスト効率の良い取り付けが確実になる。
搬送ホイル１との結合において、成形体４、５の取り付けは、例えば真空吸着を通じてホイルを担持する上部ツールによって行われる。半導体キャリアと上部ツールをカメラ制御によってＸ−Ｙ相対移動させることにより、搬送ホイルとパワー半導体配列又はウェハ複合材料との高い精度での位置付けが確実になる。Ｚ軸にわたって配置することにより、搬送ホイル及び全ての成形体が（単複の）半導体の所定の上部側接触面に確実に取り付けられるようになる（図４）。調整によって得られた位置は、例えば搬送ホイルの２、３箇所をチップ表面に接着することによって固定することができる。或いは、成形体は、焼結層に関与することによって結合を保証することもできる。
図４では、成形体と結合層を接触させた後に生じる結合層７を通じた半導体接触面と成形体の材料結合を見ることができる。或いは、結合相手がフロー式はんだ付け又は拡散はんだ付けされている場合には、結合層を軟質はんだ（Ｓｎ、Ｐｂ、Ａｕ系のはんだ）とすることもできる。しかしながら、結合相手が低温焼結されている場合には、結合層を主にＡｇ含有層とすることもできる。
例えば、パワー半導体がダイオードである場合、単一のダイオードは、一般にパワー半導体の接触面の境界内に正確に位置付けることにより配置された成形体を１つのみ搬送する。
パワー半導体がトランジスタである場合、半導体の上部側には少なくともゲート及びエミッタの接触面が存在し、また特別な例（窒化ガリウム半導体）ではコレクタの接触面もさらに存在し、これらの各々に少なくとも１つの成形体が接触する。
搬送ホイルは高温耐性を有し、はんだ付け又は焼結の処理温度に耐えるので、成形体を接触面と材料結合させた後で除去することができ、後には所定の位置に成形体のみが残るようになる（図５）。
搬送ホイルは、限られた時間にわたり、少なくとも（単複の）半導体の接触面上に位置付けられた後までは、成形体を支持する一時的定着力を有する。
必要時には、例えば紫外線照射によって搬送ホイルの定着力を低減させることができ、これにより残留物を残さずに分離処理を行えるようになる。別の実施形態では、搬送ホイルが、成形体の範囲内に既に開口領域（「窓」）を有している。これらの窓により、表面が損傷を受けないようにするための要件を容易に満たせるようになる。このようにして、窓の部分には接着材残留物が残留できず、この部分では、場合によって必要になる洗浄（液体又はプラズマ洗浄）を成形体に対して直接行うことができるようになる。最終的には、ボンディング技術によってこれらの部分を接触させることができる。接着材残留物を回避する比較的効率の良い方法は、成形体の結合面の領域にわたって搬送ホイル上の接着材を部分的に除去することである。
好ましい実施形態は、（例えば、最大直径６００μｍの）銅の太径ワイヤのボンディングに合わせて最適化される。そして、各個々の成形体の表面から基板表面の対応する電位に、銅の太径接触ワイヤを通じて電流が流れるようになる。
添付図面に基づく以下の好ましい実施形態の説明から、本発明のさらなる利点及び特徴が明らかになる。
金属ホイル３上の搬送ホイル１及び固定層２を示す図である。 金属ホイルを個々の成形体４、５に構造化した図である。 金属化層８上の焼結金属の結合層７を施したウェハアセンブリ６上に図２の要素を接続する図である。 圧力及び必要時に熱を加える焼結工程を示す図である。 搬送ホイル１及び固定層２を除去するステップを示す図である。 焼結によって成形体を取り付けた半導体部品の切断工程の概略図である。 成形体４を有するチップ１２を示す図である。 図７のチップに追加の酸化防止層１０を施した図である。
上部側電位面を有するパワー半導体と太径ワイヤ又はストリップとの接続部を形成する方法によって得られる利点としては、ボンディング中においてもその前後の工程においても半導体の薄い金属化層又は金属化構造を損傷するリスクがない点、及び電流分布が改善される点が挙げられる。（例えば、最大ワイヤ径６００μｍの）銅の太径ワイヤのボンディングでは、電流が成形体上のワイヤの中心固定領域から分散し、成形体を通じて基板表面の対応する電位面に流れる。
この接続では、図１〜図８に概略的に説明する、上部側電位面を有するパワー半導体チップ１２と太径ワイヤを接続する方法を実行することを提案する。この方法は、上部側電位面の形状に対応する金属成形体４、５を用意するステップと、上部側電位面上又は金属成形体４、５上に結合層７を施すステップと、電位面との間に結合力の高い導電性接続を形成した後で、成形体４、５のボンディングされていない上部側に太径ワイヤをボンディングするステップと、によって行われる。
図示してはいないが、好ましい変形例の範囲として、パワー半導体チップ１２の底部側にチップの形のさらなる成形体を設け、パワー半導体チップ１２の上部側電位面とは反対側の底部側に結合層を通じてしっかりと結合するように接続する。
成形体４、５の材料は、例えば元素群Ｃｕ、Ａｇ、Ａｕ、Ｍｏ、Ａｌ、Ｗのうちの金属又はこれらの合金であり、この合金はこの元素群のうちの１つ又はそれ以上の金属を含む。
成形体４、５を上部側電位面に取り付けるための結合層については、パワー半導体チップ１２への低温焼結技術、拡散はんだ付け又は接着が行われるが、接合用の焼結層を施した成形体４、５を銀又はニッケル−金で被覆してから焼結材料を加えることをさらに提案する。代替例では、焼結材料を金属化層８上に、例えばウェハアセンブリ６の例えば上部側電位面に加える（図３）。
成形体を設ける面の材料としては、例えばポリイミド又はポリアミドなどの可撓性有機搬送ホイル１を提案する。結合時の熱負荷に耐えられる電気絶縁性の搬送シートを形成するには、また例えば搬送ホイルのウェハアセンブリ６などの広い面積についても、例えばＮＯＭＥＸホイルなどの複数の他の材料を想像することができる。
その後、接合前に、ウェハアセンブリ６の１又はそれ以上の、特に未だ分割されていないパワー半導体チップ１２の上に、電位面の数に対応する複数の成形体４、５を備えた搬送シートを配置することができる。成形体４、５は、接着層２によって搬送シート上に保持される。結合後、太径ワイヤのボンディングを妨げないように成形体４、５から搬送シートを剥ぎ取ることができる。別の実施形態では、搬送シートが、太径ワイヤをボンディングするためのパンチ穴を有することもできる。この場合、搬送シートは、必要時には何らかの保護機能を有することができる少なくとも縁部として残るようになる。
別の実施形態では、この取り外し可能な搬送ホイルが、固定層２の接着材が部分的に施されていない領域、さらにはホイル内の例えば成形体の上部側の中心領域にパンチ穴の開いた領域又は別の開口領域（「窓」）が形成された領域を有する。
これらの窓は、結合のために準備された成形体の中心の部分的な面の上方に設けられることが好ましく、これにより後続する太径ワイヤのボンディングのための損傷の無い表面、特に接着材残留物が存在しない表面領域という要件を満たすことが容易になる。
従って、本発明による方法は、以下の複数の利点を提供する。
・ 薄い半導体要素の場合にも、成形体が、太径銅ワイヤによる上部側の接続を可能にする。
・ 成形体が、太径銅ワイヤのボンディング中に半導体の薄く損傷を受けやすい金属化表面（通常はわずか約３μｍ〜４μｍ）を保護する。
・ 成形体が、チップ表面の断面全体にわたる電流密度分布の改善を保証する。
・ 成形体が、ばね式接点による摩擦接触中に半導体の損傷を受けやすい表面構造を保護する。これにより、製造ラインにおける非破壊的電気品質試験が単純化される。
・ 機械的応力の対称化により、底部側の層がディッシング効果（半導体要素の変形）を防ぐ。
・ 上部側及び下部側の搬送ホイルが、ウェハ全体を被覆できる導電面を形成し、従ってコスト効率の高い正確な方法で全ての接触面を同時に接触させることができるようになる。
４ 成形体
５ 成形体
６ ウェハアセンブリ
７ 結合層
８ 金属化層

Claims (9)

  1. 上部側電位面を有するパワー半導体チップ（１２）と太径ワイヤ又はストリップとの接続を形成する方法であって、
    前記上部側電位面の形状に対応する金属成形体（４、５）を用意するステップと、
    前記上部側電位面上又は前記金属成形体（４、５）上に結合層（７）を施すステップと、
    前記成形体（４、５）を配置して、前記電位面との間に結合力の高い導電性接続を形成した後で、前記成形体（４、５）のボンディングされていない上部側に太径ワイヤをボンディングするステップと、
    を含むことを特徴とする方法。
  2. 前記用意した成形体（４、５）は、元素群Ｃｕ、Ａｇ、Ａｕ、Ｍｏ、Ａｌ、Ｗのうちの少なくとも１つの金属、又はこれらの合金を含み、該合金は前記元素群のうちの１つ又はそれ以上の金属を含む、
    ことを特徴とする請求項１に記載の方法。
  3. 前記成形体（４、５）と前記電位面は、前記結合層（７）を通じて、前記パワー半導体チップ（１２）への焼結、拡散はんだ付け又は接着により結合される、
    ことを特徴とする請求項１又は２に記載の方法。
  4. 前記成形体（４、５）は、有機搬送ホイル（１）上に設けられる、
    ことを特徴とする請求項１から３のいずれか１項に記載の方法。
  5. 前記パワー半導体チップ（１２）の底部側の形状を有するさらなる成形体が、前記パワー半導体チップ（１２）の前記上部側電位面とは反対側の底部側の結合層にしっかりと接続するように設けられる、
    ことを特徴とする請求項１から４のいずれか１項に記載の方法。
  6. 前記搬送ホイル（１）には、前記結合時の熱負荷に耐えることができる電気絶縁性の材料が使用される、
    ことを特徴とする請求項１から５のいずれか１項に記載の方法。
  7. 電位面の数に対応する複数の成形体（４、５）を有する搬送ホイル（１）の搬送シートが、結合前に２又はそれ以上の未分割のパワー半導体チップに適用される、
    ことを特徴とする請求項１から６のいずれか１項に記載の方法。
  8. 前記成形体（４、５）を結合した後で、前記パワー半導体チップを分離する前に前記搬送シートを除去する、
    ことを特徴とする請求項１から７のいずれか１項に記載の方法。
  9. 前記成形体（４、５）の、結合のための中心の部分的な面の上方では、前記搬送シートに接着材が使用されない、
    ことを特徴とする請求項１から７のいずれか１項に記載の方法。
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