JP5642808B2 - 金属接合セラミック基板 - Google Patents
金属接合セラミック基板 Download PDFInfo
- Publication number
- JP5642808B2 JP5642808B2 JP2012556974A JP2012556974A JP5642808B2 JP 5642808 B2 JP5642808 B2 JP 5642808B2 JP 2012556974 A JP2012556974 A JP 2012556974A JP 2012556974 A JP2012556974 A JP 2012556974A JP 5642808 B2 JP5642808 B2 JP 5642808B2
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- Prior art keywords
- ceramic substrate
- metal
- metal layer
- cutting line
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 title claims description 133
- 239000002184 metal Substances 0.000 title claims description 133
- 239000000919 ceramic Substances 0.000 title claims description 99
- 239000000758 substrate Substances 0.000 title claims description 99
- 238000005520 cutting process Methods 0.000 claims description 55
- 238000005219 brazing Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 13
- 238000009826 distribution Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 6
- 239000000945 filler Substances 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/365—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/368—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/402—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/407—Copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
図4を参照すれば、最外郭に位置する金属層20と切断ライン24との間の間隔を寸法1 L1と仮定し、内側に位置する金属層20と切断ライン24との間の間隔を寸法2 L2と仮定する。
20 金属層
22 追加金属層
24 切断ライン
30 感光性フィルム
110 セラミック基板
120 金属層
122 追加金属層
124 切断チャネル
130 切断ライン
130a 内部切断ライン
130b 外部切断ライン
Claims (7)
- 表面に金属層が接合されて回路パターンを形成し、前記金属層は、多数個が列及び行に配置される金属接合セラミック基板において、
前記セラミック基板の少なくとも一面には、前記金属層の外郭に位置するように追加金属層が端部に沿って形成され、
前記金属層間の間隔は、最外郭に位置する金属層と追加金属層との間隔と同一に形成され、
前記金属層の間及び前記最外郭に位置する金属層と前記追加金属層との間には、少なくとも1つ以上の切断ラインが形成され、
前記金属層の間の中央部と、前記最外郭に位置する金属層と前記追加金属層との間の中央部に沿って前記切断ラインが形成され、
金属接合セラミック基板の上に半導体チップを実装するために形成されるろう材層の濡れ性において、外郭部分と中間部分との濡れ性の平均差異が1%未満であり、全体部分の濡れ性の平均値が5%未満であることを特徴とする金属接合セラミック基板。 - 前記切断ラインは、前記金属層が端部に形成された外部切断ラインと、前記金属層の間に形成された内部切断ラインとで構成されることを特徴とする請求項1に記載の金属接合セラミック基板。
- 前記追加金属層には、多数個が列及び行に配置される前記金属層の境界の延長線に該当する部分に切断チャネルが形成されることを特徴とする請求項2に記載の金属接合セラミック基板。
- 前記内部切断ラインは、前記金属層の端部までに延長し、前記外部切断ラインは、前記切断チャネルを介してセラミック基板の端部まで延長することを特徴とする請求項3に記載の金属接合セラミック基板。
- 前記外部切断ライン及び内部切断ラインは、前記切断チャネルを介してセラミック基板の端部まで延長することを特徴とする請求項3に記載の金属接合セラミック基板。
- 前記セラミック基板は、アルミナ(Al2O3)、窒化アルミニウム(AlN)、炭化ケイ素(SiC)または窒化ケイ素(Si3N4)のセラミック素材よりなり、前記金属層は、銅またはアルミニウムよりなることを特徴とする請求項1に記載の金属接合セラミック基板。
- 前記追加金属層は、前記セラミック基板の上面及び下面にそれぞれ異なる面積と形状を有するように形成されることを特徴とする請求項1に記載の金属接合セラミック基板。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0020879 | 2010-03-09 | ||
KR1020100020879A KR101675727B1 (ko) | 2010-03-09 | 2010-03-09 | 금속접합 세라믹기판 |
PCT/KR2011/001609 WO2011111989A2 (ko) | 2010-03-09 | 2011-03-09 | 금속접합 세라믹기판 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013522872A JP2013522872A (ja) | 2013-06-13 |
JP5642808B2 true JP5642808B2 (ja) | 2014-12-17 |
Family
ID=44563992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012556974A Active JP5642808B2 (ja) | 2010-03-09 | 2011-03-09 | 金属接合セラミック基板 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP2546870A4 (ja) |
JP (1) | JP5642808B2 (ja) |
KR (1) | KR101675727B1 (ja) |
WO (1) | WO2011111989A2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101733442B1 (ko) * | 2014-12-29 | 2017-05-10 | 주식회사 케이씨씨 | 기판의 휨 방지 구조체 |
CN108059485B (zh) * | 2017-12-05 | 2023-06-13 | 上海铠琪科技有限公司 | 一种微型超薄氮化铝陶瓷电路板及制备方法 |
JPWO2019225273A1 (ja) * | 2018-05-23 | 2021-05-27 | 住友ベークライト株式会社 | 回路基板の製造方法 |
CN113614261A (zh) * | 2019-03-25 | 2021-11-05 | 京瓷株式会社 | 电路衬底及具备它的散热衬底或电子设备 |
KR20200127511A (ko) * | 2019-05-02 | 2020-11-11 | 주식회사 아모센스 | 세라믹 기판 및 그의 제조방법 |
KR102244833B1 (ko) | 2019-12-10 | 2021-04-27 | 주식회사 유텔 | 적층형 lcp 전자소자 |
CN113764292B (zh) * | 2021-11-08 | 2022-03-01 | 上海曦智科技有限公司 | 半导体装置及其制造方法 |
CN117116775B (zh) * | 2023-09-25 | 2024-03-26 | 江苏富乐华半导体科技股份有限公司 | 一种厚金属层陶瓷基板的图形设计方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69021438T2 (de) * | 1989-05-16 | 1996-01-25 | Marconi Gec Ltd | Verfahren zur Herstellung einer Flip-Chip-Lötstruktur für Anordnungen mit Gold-Metallisierung. |
JP2876989B2 (ja) * | 1994-05-31 | 1999-03-31 | 松下電工株式会社 | プリント配線板の製造方法 |
JP4077888B2 (ja) * | 1995-07-21 | 2008-04-23 | 株式会社東芝 | セラミックス回路基板 |
US6261703B1 (en) * | 1997-05-26 | 2001-07-17 | Sumitomo Electric Industries, Ltd. | Copper circuit junction substrate and method of producing the same |
JP4168114B2 (ja) * | 2001-09-28 | 2008-10-22 | Dowaホールディングス株式会社 | 金属−セラミックス接合体 |
JP2007019123A (ja) * | 2005-07-06 | 2007-01-25 | Sumitomo Metal Electronics Devices Inc | セラミック回路基板集合体 |
JP3993619B2 (ja) * | 2005-07-06 | 2007-10-17 | 株式会社住友金属エレクトロデバイス | セラミック回路基板集合体 |
JP2007324277A (ja) * | 2006-05-31 | 2007-12-13 | Sumitomo Metal Electronics Devices Inc | セラミック回路基板集合体 |
-
2010
- 2010-03-09 KR KR1020100020879A patent/KR101675727B1/ko active IP Right Grant
-
2011
- 2011-03-09 EP EP11753594.8A patent/EP2546870A4/en not_active Withdrawn
- 2011-03-09 JP JP2012556974A patent/JP5642808B2/ja active Active
- 2011-03-09 WO PCT/KR2011/001609 patent/WO2011111989A2/ko active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2011111989A3 (ko) | 2012-01-05 |
KR20110101692A (ko) | 2011-09-16 |
WO2011111989A2 (ko) | 2011-09-15 |
JP2013522872A (ja) | 2013-06-13 |
KR101675727B1 (ko) | 2016-11-14 |
EP2546870A4 (en) | 2017-11-29 |
EP2546870A2 (en) | 2013-01-16 |
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