JP2010219524A - ミリチャネル基材、並びにミリチャネル基材を用いた冷却デバイス及び装置を製造する方法 - Google Patents
ミリチャネル基材、並びにミリチャネル基材を用いた冷却デバイス及び装置を製造する方法 Download PDFInfo
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
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- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
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- Y10T29/49366—Sheet joined to sheet
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
【解決手段】電力用電子回路100を装着させるための基材12が、下面及び上面を有する中間セラミック層120と、中間セラミック層120の上面に取り付けられた上部金属層121と、中間セラミック層120の下面に取り付けられた下部金属層122とを含んでいる。下部金属層122は、電力用電子回路100を冷却する冷却材を送達するように構成されている複数のミリチャネルを有し、該ミリチャネルは、中間セラミック層120の下面への取り付けの前に下部金属層122の上に形成される。
【選択図】図1
Description
11 基板
12 基材
13 第一のはんだ
14 第二のはんだ
20 入口多岐管
21 出口多岐管
22 入口プレナム
23 出口プレナム
100 熱源
120 中間層
121 上層
122 下層
123 上面
124 下面
125、126 ミリチャネル
Claims (10)
- 電力用電子回路(100)を装着させるための基材(12)であって、
下面(124)及び上面(123)を有する中間セラミック層(120)と、
該中間セラミック層(120)の前記上面(123)に取り付けられた上部金属層(121)と、
前記中間セラミック層(120)の前記下面(124)に取り付けられた下部金属層(122)であって、当該下部金属層(122)は、前記電力用電子回路(100)を冷却する冷却材を送達するように構成されている複数のミリチャネル(125、126)を有し、該ミリチャネル(125、126)は、前記中間セラミック層(120)の前記下面(124)への取り付けの前に前記下部金属層(122)の上に形成される、下部金属層(122)と
を備えた基材(12)。 - 前記下部金属層(122)及び前記上部金属層(121)は、活性金属鑞付け又は直接接着銅の一方により前記中間セラミック層(120)に結合される、請求項1に記載の基材。
- 前記中間セラミック層(120)は、酸化アルミニウム(Al2O3)、窒化アルミニウム(AlN)、酸化ベリリウム(BeO)、及び窒化ケイ素(Si3N4)の少なくとも一つを含んでおり、前記下部金属層(122)及び前記上部金属層(121)は、銅、アルミニウム、金、銀、及びこれらの合金の少なくとも一つを含む一つの伝導性材料を含んでいる、請求項1に記載の基材。
- 第一の層(122)に複数のミリチャネル(125、126)を画定するステップと、
基材(12)を形成するステップであって、
前記ミリチャネルを有する前記第一の層(122)を第二の層(120)の下面(124)に取り付けるステップと、
第三の層(121)を前記第二の層(120)の上面(123)に取り付けるステップと
を含む形成するステップと、
前記第一の層(122)が基板(11)に結合されるように前記基材(12)を前記基板(11)に取り付けるステップであって、前記基板(11)は前記基材(12)と協働して前記ミリチャネル(125、126)に冷却材を通すように構成されている、取り付けるステップと
を備えた冷却デバイスを製造する方法。 - 前記第一の層(122)及び前記第三の層(121)の前記第二の層(120)への前記取り付けは同時に行なわれる、請求項4に記載の方法。
- 前記基板(11)は入口多岐管(20)及び出口多岐管(21)を含んでおり、前記ミリチャネル(125、126)は、前記入口多岐管(20)から前記冷却材を受け入れて前記出口多岐管(21)に前記冷却材を送達するように構成されている、請求項4に記載の方法。
- 前記基材(12)を前記基板(11)に取り付ける前に、共融鉛スズはんだ及び高鉛はんだの一方を含むはんだ(13、14)を前記基板(11)に取り付けるステップをさらに含んでいる請求項4に記載の方法。
- 基材(12)を製造するステップであって、
第一の層(122)に複数のミリチャネル(125、126)を画定するステップと、
該ミリチャネル(125、126)を有する前記第一の層(122)を第二の層(120)の下面(124)に取り付けるステップと、
第三の層(121)を前記第二の層(120)の上面(123)に取り付けるステップと
を含む製造するステップと、
前記第一の層(122)が基板(11)に結合されるように前記基材(12)を前記基板(11)に取り付けるステップであって、前記基板(11)は前記基材(12)と協働して前記ミリチャネル(125、126)に冷却材を通すように構成されている、取り付けるステップと、
電力用電子回路(100)を前記基材(12)の前記第三の層(121)に取り付けるステップと
を備えた装置(10)を製造する方法。 - 前記第二の層(120)は、少なくとも一つの電気絶縁性及び熱伝導性の材料を含んでおり、前記第一及び第三の層(122、121)の1又は複数は、少なくとも一つの伝導性材料を含んでいる、請求項8に記載の方法。
- 前記第二の層(120)は窒化アルミニウム(AlN)を含んでおり、前記第一及び第三の層(122、121)の1又は複数は銅を含んでいる、請求項8に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US12/400,067 US7898807B2 (en) | 2009-03-09 | 2009-03-09 | Methods for making millichannel substrate, and cooling device and apparatus using the substrate |
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US (1) | US7898807B2 (ja) |
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JP (1) | JP2010219524A (ja) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014502059A (ja) * | 2011-01-05 | 2014-01-23 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | サーマルマネージメントを向上させた電子アセンブリ |
JP2017199830A (ja) * | 2016-04-28 | 2017-11-02 | 三菱電機株式会社 | パワーモジュール |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8347502B2 (en) * | 2007-12-28 | 2013-01-08 | Ge Intelligent Platforms, Inc. | Heat sink and method of forming a heatsink using a wedge-lock system |
US8472193B2 (en) | 2008-07-04 | 2013-06-25 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor device |
US20100302734A1 (en) * | 2009-05-29 | 2010-12-02 | General Electric Company | Heatsink and method of fabricating same |
TW201043910A (en) * | 2009-06-03 | 2010-12-16 | High Conduction Scient Co Ltd | Water-cooling device and its manufacturing method |
JP5704994B2 (ja) * | 2011-03-31 | 2015-04-22 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 半導体接合装置 |
WO2012158304A1 (en) * | 2011-05-17 | 2012-11-22 | Carrier Corporation | Variable frequency drive heat sink assembly |
US8982558B2 (en) | 2011-06-24 | 2015-03-17 | General Electric Company | Cooling device for a power module, and a related method thereof |
CN103779043B (zh) * | 2012-10-25 | 2017-09-26 | 台达电子企业管理(上海)有限公司 | 大功率电磁组件 |
US10270220B1 (en) * | 2013-03-13 | 2019-04-23 | Science Research Laboratory, Inc. | Methods and systems for heat flux heat removal |
US9510478B2 (en) | 2013-06-20 | 2016-11-29 | Honeywell International Inc. | Cooling device including etched lateral microchannels |
US20150075754A1 (en) * | 2013-09-17 | 2015-03-19 | Ge Aviation Systems Llc | Single-pass cold plate assembly |
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US20150195951A1 (en) * | 2014-01-06 | 2015-07-09 | Ge Aviation Systems Llc | Cooled electronic assembly and cooling device |
US20160150678A1 (en) * | 2014-11-22 | 2016-05-26 | Gerald Ho Kim | Silicon Cooling Plate With An Integrated PCB |
US20170303431A1 (en) * | 2014-11-22 | 2017-10-19 | Gerald Ho Kim | Silicon Cooling Plate With An Integrated PCB |
US9622380B1 (en) * | 2015-09-30 | 2017-04-11 | Toyota Motor Engineering & Manufacturing North America, Inc. | Two-phase jet impingement cooling devices and electronic device assemblies incorporating the same |
JP6496845B2 (ja) * | 2017-02-13 | 2019-04-10 | 新電元工業株式会社 | 電子機器 |
US10822096B2 (en) | 2018-03-30 | 2020-11-03 | Ge Aviation Systems Llc | Avionics cooling module |
EP4337785A4 (en) * | 2021-05-10 | 2024-03-20 | Hewlett-Packard Development Company, L.P. | APPARATUS COMPRISING A COOLANT PASSAGE FOR AMPLIFYING A NUCLEIC ACID |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11346480A (ja) * | 1998-06-02 | 1999-12-14 | Hitachi Ltd | インバータ装置 |
JP2004006717A (ja) * | 2002-04-10 | 2004-01-08 | Mitsubishi Electric Corp | パワー半導体装置 |
JP2008522406A (ja) * | 2004-11-24 | 2008-06-26 | ゼネラル・エレクトリック・カンパニイ | マイクロチャネル冷却を備えた、パワーデバイスのためのヒートシンク(関連出願への相互参照)本出願は、本出願と同時に出願したGEドケット番号第155941号に対応するStevanovic他の「パワーモジュール、位相レッグ及び三相インバータ」という名称の本出願と同一出願人の係属中の米国特許出願と関連しており、この特許出願はその全体を参考文献として本明細書に組み入れている。 |
JP2008294197A (ja) * | 2007-05-24 | 2008-12-04 | Mitsubishi Materials Corp | パワーモジュール用ユニットの製造方法 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3805851A1 (de) * | 1988-02-25 | 1989-08-31 | Standard Elektrik Lorenz Ag | Leiterplatte mit einer kuehlvorrichtung |
US5005640A (en) * | 1989-06-05 | 1991-04-09 | Mcdonnell Douglas Corporation | Isothermal multi-passage cooler |
US5099311A (en) * | 1991-01-17 | 1992-03-24 | The United States Of America As Represented By The United States Department Of Energy | Microchannel heat sink assembly |
EP0706221B8 (en) * | 1994-10-07 | 2008-09-03 | Hitachi, Ltd. | Semiconductor device comprising a plurality of semiconductor elements |
DE19514548C1 (de) * | 1995-04-20 | 1996-10-02 | Daimler Benz Ag | Verfahren zur Herstellung einer Mikrokühleinrichtung |
US5692558A (en) * | 1996-07-22 | 1997-12-02 | Northrop Grumman Corporation | Microchannel cooling using aviation fuels for airborne electronics |
US5871158A (en) * | 1997-01-27 | 1999-02-16 | The University Of Utah Research Foundation | Methods for preparing devices having metallic hollow microchannels on planar substrate surfaces |
DE19710783C2 (de) * | 1997-03-17 | 2003-08-21 | Curamik Electronics Gmbh | Kühler zur Verwendung als Wärmesenke für elektrische Bauelemente oder Schaltkreise |
US5901037A (en) * | 1997-06-18 | 1999-05-04 | Northrop Grumman Corporation | Closed loop liquid cooling for semiconductor RF amplifier modules |
DE19735531A1 (de) * | 1997-08-16 | 1999-02-18 | Abb Research Ltd | Leistungshalbleitermodul mit in Submodulen integrierten Kühlern |
FR2786656B1 (fr) * | 1998-11-27 | 2001-01-26 | Alstom Technology | Composant electronique de puissance comportant des moyens de refroidissement |
DE19900603A1 (de) * | 1999-01-11 | 2000-07-13 | Bosch Gmbh Robert | Elektronisches Halbleitermodul |
US6253835B1 (en) * | 2000-02-11 | 2001-07-03 | International Business Machines Corporation | Isothermal heat sink with converging, diverging channels |
US6490159B1 (en) * | 2000-09-06 | 2002-12-03 | Visteon Global Tech., Inc. | Electrical circuit board and method for making the same |
US6377457B1 (en) * | 2000-09-13 | 2002-04-23 | Intel Corporation | Electronic assembly and cooling thereof |
US6388317B1 (en) * | 2000-09-25 | 2002-05-14 | Lockheed Martin Corporation | Solid-state chip cooling by use of microchannel coolant flow |
US6582987B2 (en) * | 2000-12-30 | 2003-06-24 | Electronics And Telecommunications Research Institute | Method of fabricating microchannel array structure embedded in silicon substrate |
ES2717849T3 (es) * | 2001-03-08 | 2019-06-25 | Alstom Transp Tech | Sustrato para circuito electrónico de potencia y módulo electrónico de potencia que utiliza dicho sustrato |
ES2187280B1 (es) * | 2001-06-28 | 2004-08-16 | Lear Automotive (Eeds) Spain, S.L. | Placa de circuito impreso con substrato metalico aislado con sistema de refrigeracion integrado. |
US6942018B2 (en) * | 2001-09-28 | 2005-09-13 | The Board Of Trustees Of The Leland Stanford Junior University | Electroosmotic microchannel cooling system |
US6805974B2 (en) * | 2002-02-15 | 2004-10-19 | International Business Machines Corporation | Lead-free tin-silver-copper alloy solder composition |
US6933221B1 (en) * | 2002-06-24 | 2005-08-23 | Micron Technology, Inc. | Method for underfilling semiconductor components using no flow underfill |
JP3960189B2 (ja) * | 2002-10-10 | 2007-08-15 | 株式会社日立製作所 | 電力変換装置 |
US6986382B2 (en) * | 2002-11-01 | 2006-01-17 | Cooligy Inc. | Interwoven manifolds for pressure drop reduction in microchannel heat exchangers |
US6903929B2 (en) * | 2003-03-31 | 2005-06-07 | Intel Corporation | Two-phase cooling utilizing microchannel heat exchangers and channeled heat sink |
JP4496404B2 (ja) * | 2003-10-10 | 2010-07-07 | Dowaメタルテック株式会社 | 金属−セラミックス接合基板およびその製造方法 |
US20050141195A1 (en) * | 2003-12-31 | 2005-06-30 | Himanshu Pokharna | Folded fin microchannel heat exchanger |
DE112004002811T5 (de) * | 2004-03-30 | 2008-03-13 | Purdue Research Foundation, Lafayette | Verbesserte Mikrokanal-Wärmesenke |
JP4419742B2 (ja) * | 2004-07-28 | 2010-02-24 | ブラザー工業株式会社 | 電子部品搭載基板及びインクジェットヘッド |
EP1659838A3 (en) * | 2004-10-27 | 2007-03-07 | Brother Kogyo Kabushiki Kaisha | Electronic part-mounted substrate, thermal conductive member for electronic part-mounted substrate, and liquid-jetting head |
JP2006245479A (ja) * | 2005-03-07 | 2006-09-14 | Nichicon Corp | 電子部品冷却装置 |
DE102005032076B3 (de) * | 2005-07-08 | 2007-02-08 | Infineon Technologies Ag | Verfahren zum Herstellen eines Schaltungsmoduls |
EP1761114A3 (en) * | 2005-08-31 | 2009-09-16 | Kabushiki Kaisha Toyota Jidoshokki | Circuit board |
US7427566B2 (en) * | 2005-12-09 | 2008-09-23 | General Electric Company | Method of making an electronic device cooling system |
US7476606B2 (en) * | 2006-03-28 | 2009-01-13 | Northrop Grumman Corporation | Eutectic bonding of ultrathin semiconductors |
JP2007305962A (ja) * | 2006-05-12 | 2007-11-22 | Honda Motor Co Ltd | パワー半導体モジュール |
US7755185B2 (en) * | 2006-09-29 | 2010-07-13 | Infineon Technologies Ag | Arrangement for cooling a power semiconductor module |
-
2009
- 2009-03-09 US US12/400,067 patent/US7898807B2/en active Active
-
2010
- 2010-03-04 CA CA2695746A patent/CA2695746C/en active Active
- 2010-03-04 JP JP2010047216A patent/JP2010219524A/ja active Pending
- 2010-03-08 EP EP10155717.1A patent/EP2228821B1/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11346480A (ja) * | 1998-06-02 | 1999-12-14 | Hitachi Ltd | インバータ装置 |
JP2004006717A (ja) * | 2002-04-10 | 2004-01-08 | Mitsubishi Electric Corp | パワー半導体装置 |
JP2008522406A (ja) * | 2004-11-24 | 2008-06-26 | ゼネラル・エレクトリック・カンパニイ | マイクロチャネル冷却を備えた、パワーデバイスのためのヒートシンク(関連出願への相互参照)本出願は、本出願と同時に出願したGEドケット番号第155941号に対応するStevanovic他の「パワーモジュール、位相レッグ及び三相インバータ」という名称の本出願と同一出願人の係属中の米国特許出願と関連しており、この特許出願はその全体を参考文献として本明細書に組み入れている。 |
JP2008294197A (ja) * | 2007-05-24 | 2008-12-04 | Mitsubishi Materials Corp | パワーモジュール用ユニットの製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014502059A (ja) * | 2011-01-05 | 2014-01-23 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | サーマルマネージメントを向上させた電子アセンブリ |
US8933546B2 (en) | 2011-01-05 | 2015-01-13 | Robert Bosch Gmbh | Electronic assembly with improved thermal management |
JP2017199830A (ja) * | 2016-04-28 | 2017-11-02 | 三菱電機株式会社 | パワーモジュール |
Also Published As
Publication number | Publication date |
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EP2228821A2 (en) | 2010-09-15 |
US20100226093A1 (en) | 2010-09-09 |
EP2228821A3 (en) | 2011-08-03 |
EP2228821B1 (en) | 2019-05-08 |
CA2695746C (en) | 2011-11-08 |
US7898807B2 (en) | 2011-03-01 |
CA2695746A1 (en) | 2010-09-09 |
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