WO2011111989A3 - 금속접합 세라믹기판 - Google Patents

금속접합 세라믹기판 Download PDF

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Publication number
WO2011111989A3
WO2011111989A3 PCT/KR2011/001609 KR2011001609W WO2011111989A3 WO 2011111989 A3 WO2011111989 A3 WO 2011111989A3 KR 2011001609 W KR2011001609 W KR 2011001609W WO 2011111989 A3 WO2011111989 A3 WO 2011111989A3
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WO
WIPO (PCT)
Prior art keywords
metal
ceramic substrate
metal layers
circuit pattern
present
Prior art date
Application number
PCT/KR2011/001609
Other languages
English (en)
French (fr)
Other versions
WO2011111989A2 (ko
Inventor
김경환
한문수
박준희
Original Assignee
주식회사 케이씨씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 케이씨씨 filed Critical 주식회사 케이씨씨
Priority to JP2012556974A priority Critical patent/JP5642808B2/ja
Priority to EP11753594.8A priority patent/EP2546870A4/en
Publication of WO2011111989A2 publication Critical patent/WO2011111989A2/ko
Publication of WO2011111989A3 publication Critical patent/WO2011111989A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/365—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

본 발명은 금속접합 세라믹기판에 관한 것이다. 본 발명은 표면에 금속층이 접합되어 회로패턴을 형성하는 세라믹기판에 관한 것이다. 회로패턴을 형성하는 금속층은 다수개가 열 및 행으로 배치된다. 그리고, 세라믹기판의 적어도 일면에는 금속층의 외곽에 위치하도록 추가 금속층이 가장자리를 따라 형성된다. 또한, 금속층 사이의 간격은 금속층과 추가 금속층 사이의 간격과 동일하게 형성됨이 바람직하다. 이와 같은 본 발명에 의하면, 본 발명에 의하면, 회로를 형성하기 위한 에칭공정 중 회로패턴의 편차를 줄여 치수 정밀도를 개선하고, 반도체 칩을 실장하기 위한 납재층 열처리 시 온도편차를 줄여 반도체 칩의 접합특성을 향상시킬 수 있으며, 금속과 세라믹의 열팽창계수 차이에 의해 발생되는 휨을 완화 또는 인위적으로 조절할 수 있는 효과가 있다.
PCT/KR2011/001609 2010-03-09 2011-03-09 금속접합 세라믹기판 WO2011111989A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012556974A JP5642808B2 (ja) 2010-03-09 2011-03-09 金属接合セラミック基板
EP11753594.8A EP2546870A4 (en) 2010-03-09 2011-03-09 Metal-bonded ceramic substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0020879 2010-03-09
KR1020100020879A KR101675727B1 (ko) 2010-03-09 2010-03-09 금속접합 세라믹기판

Publications (2)

Publication Number Publication Date
WO2011111989A2 WO2011111989A2 (ko) 2011-09-15
WO2011111989A3 true WO2011111989A3 (ko) 2012-01-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/001609 WO2011111989A2 (ko) 2010-03-09 2011-03-09 금속접합 세라믹기판

Country Status (4)

Country Link
EP (1) EP2546870A4 (ko)
JP (1) JP5642808B2 (ko)
KR (1) KR101675727B1 (ko)
WO (1) WO2011111989A2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101733442B1 (ko) * 2014-12-29 2017-05-10 주식회사 케이씨씨 기판의 휨 방지 구조체
CN108059485B (zh) * 2017-12-05 2023-06-13 上海铠琪科技有限公司 一种微型超薄氮化铝陶瓷电路板及制备方法
JPWO2019225273A1 (ja) * 2018-05-23 2021-05-27 住友ベークライト株式会社 回路基板の製造方法
WO2020196528A1 (ja) * 2019-03-25 2020-10-01 京セラ株式会社 回路基体およびこれを備える放熱基体または電子装置
KR20200127511A (ko) * 2019-05-02 2020-11-11 주식회사 아모센스 세라믹 기판 및 그의 제조방법
KR102244833B1 (ko) 2019-12-10 2021-04-27 주식회사 유텔 적층형 lcp 전자소자
CN113764292B (zh) * 2021-11-08 2022-03-01 上海曦智科技有限公司 半导体装置及其制造方法
CN117116775B (zh) * 2023-09-25 2024-03-26 江苏富乐华半导体科技股份有限公司 一种厚金属层陶瓷基板的图形设计方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019123A (ja) * 2005-07-06 2007-01-25 Sumitomo Metal Electronics Devices Inc セラミック回路基板集合体
JP2007019126A (ja) * 2005-07-06 2007-01-25 Sumitomo Metal Electronics Devices Inc セラミック回路基板集合体
JP2007324277A (ja) * 2006-05-31 2007-12-13 Sumitomo Metal Electronics Devices Inc セラミック回路基板集合体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69021438T2 (de) * 1989-05-16 1996-01-25 Marconi Gec Ltd Verfahren zur Herstellung einer Flip-Chip-Lötstruktur für Anordnungen mit Gold-Metallisierung.
JP2876989B2 (ja) * 1994-05-31 1999-03-31 松下電工株式会社 プリント配線板の製造方法
JP4077888B2 (ja) * 1995-07-21 2008-04-23 株式会社東芝 セラミックス回路基板
KR100371974B1 (ko) * 1997-05-26 2003-02-17 스미토모덴키고교가부시키가이샤 구리회로접합기판 및 그 제조방법
JP4168114B2 (ja) * 2001-09-28 2008-10-22 Ｄｏｗａホールディングス株式会社 金属−セラミックス接合体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019123A (ja) * 2005-07-06 2007-01-25 Sumitomo Metal Electronics Devices Inc セラミック回路基板集合体
JP2007019126A (ja) * 2005-07-06 2007-01-25 Sumitomo Metal Electronics Devices Inc セラミック回路基板集合体
JP2007324277A (ja) * 2006-05-31 2007-12-13 Sumitomo Metal Electronics Devices Inc セラミック回路基板集合体

Also Published As

Publication number Publication date
EP2546870A2 (en) 2013-01-16
EP2546870A4 (en) 2017-11-29
KR20110101692A (ko) 2011-09-16
WO2011111989A2 (ko) 2011-09-15
JP5642808B2 (ja) 2014-12-17
KR101675727B1 (ko) 2016-11-14
JP2013522872A (ja) 2013-06-13

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