JP5636203B2 - 半導体基板、半導体装置及び半導体基板の製造方法 - Google Patents

半導体基板、半導体装置及び半導体基板の製造方法 Download PDF

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JP5636203B2
JP5636203B2 JP2010071059A JP2010071059A JP5636203B2 JP 5636203 B2 JP5636203 B2 JP 5636203B2 JP 2010071059 A JP2010071059 A JP 2010071059A JP 2010071059 A JP2010071059 A JP 2010071059A JP 5636203 B2 JP5636203 B2 JP 5636203B2
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epitaxial layer
semiconductor substrate
forming step
flow rate
dopant
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Japanese (ja)
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JP2010251737A5 (https=
JP2010251737A (ja
Inventor
彰二 野上
彰二 野上
仁 五東
仁 五東
柴田　巧
巧 柴田
山本　剛
剛 山本
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Sumco Corp
Denso Corp
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Sumco Corp
Denso Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H10D62/058—Forming charge compensation regions, e.g. superjunctions by using trenches, e.g. implanting into sidewalls of trenches or refilling trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

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JP2010071059A 2009-03-26 2010-03-25 半導体基板、半導体装置及び半導体基板の製造方法 Active JP5636203B2 (ja)

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JP2010071059A JP5636203B2 (ja) 2009-03-26 2010-03-25 半導体基板、半導体装置及び半導体基板の製造方法

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JP2009076472 2009-03-26
JP2009076472 2009-03-26
JP2010071059A JP5636203B2 (ja) 2009-03-26 2010-03-25 半導体基板、半導体装置及び半導体基板の製造方法

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JP2010251737A JP2010251737A (ja) 2010-11-04
JP2010251737A5 JP2010251737A5 (https=) 2013-05-09
JP5636203B2 true JP5636203B2 (ja) 2014-12-03

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US (1) US8501598B2 (https=)
EP (1) EP2413348B1 (https=)
JP (1) JP5636203B2 (https=)
CN (1) CN102362336B (https=)
WO (1) WO2010109892A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5706674B2 (ja) * 2010-11-24 2015-04-22 セイコーインスツル株式会社 定電流回路及び基準電圧回路
JP2013258327A (ja) * 2012-06-13 2013-12-26 Toshiba Corp 半導体装置及びその製造方法
JP5812029B2 (ja) 2012-06-13 2015-11-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2015162492A (ja) * 2014-02-26 2015-09-07 豊田合成株式会社 半導体装置の製造方法
JP6150075B2 (ja) * 2014-05-01 2017-06-21 信越半導体株式会社 エピタキシャルウェーハの製造方法
EP4379808A3 (en) 2015-12-15 2024-11-20 General Electric Company Edge termination designs for silicon carbide super-junction power devices
CN106876463A (zh) * 2016-12-28 2017-06-20 全球能源互联网研究院 一种超结碳化硅器件及其制备方法
JP6857351B2 (ja) * 2017-02-28 2021-04-14 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7089329B2 (ja) * 2018-11-13 2022-06-22 株式会社豊田中央研究所 半導体装置とその製造方法
JP7077252B2 (ja) * 2019-02-27 2022-05-30 株式会社東芝 半導体装置の製造方法

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CN100565801C (zh) * 2004-03-31 2009-12-02 株式会社电装 半导体器件的制造方法
JP4773716B2 (ja) 2004-03-31 2011-09-14 株式会社デンソー 半導体基板の製造方法
JP3961503B2 (ja) * 2004-04-05 2007-08-22 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
JP4939760B2 (ja) * 2005-03-01 2012-05-30 株式会社東芝 半導体装置
JP5150048B2 (ja) * 2005-09-29 2013-02-20 株式会社デンソー 半導体基板の製造方法
JP5015440B2 (ja) * 2005-09-29 2012-08-29 株式会社デンソー 半導体基板の製造方法
DE102006045912B4 (de) * 2005-09-29 2011-07-21 Sumco Corp. Verfahren zur Fertigung einer Halbleitervorrichtung und Epitaxialwachstumseinrichtung
WO2007116420A1 (en) * 2006-04-11 2007-10-18 Stmicroelectronics S.R.L. Process for manufacturing a semiconductor power device and respective device
JP5217257B2 (ja) * 2007-06-06 2013-06-19 株式会社デンソー 半導体装置およびその製造方法

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Publication number Publication date
WO2010109892A1 (ja) 2010-09-30
EP2413348B1 (en) 2020-11-18
JP2010251737A (ja) 2010-11-04
EP2413348A4 (en) 2014-02-26
US20120032312A1 (en) 2012-02-09
CN102362336A (zh) 2012-02-22
CN102362336B (zh) 2014-03-12
EP2413348A1 (en) 2012-02-01
US8501598B2 (en) 2013-08-06

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