JP2010251737A5 - - Google Patents

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Publication number
JP2010251737A5
JP2010251737A5 JP2010071059A JP2010071059A JP2010251737A5 JP 2010251737 A5 JP2010251737 A5 JP 2010251737A5 JP 2010071059 A JP2010071059 A JP 2010071059A JP 2010071059 A JP2010071059 A JP 2010071059A JP 2010251737 A5 JP2010251737 A5 JP 2010251737A5
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JP
Japan
Prior art keywords
epitaxial layer
semiconductor substrate
dopant gas
flow rate
substrate according
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JP2010071059A
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English (en)
Japanese (ja)
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JP2010251737A (ja
JP5636203B2 (ja
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Priority to JP2010071059A priority Critical patent/JP5636203B2/ja
Priority claimed from JP2010071059A external-priority patent/JP5636203B2/ja
Publication of JP2010251737A publication Critical patent/JP2010251737A/ja
Publication of JP2010251737A5 publication Critical patent/JP2010251737A5/ja
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JP2010071059A 2009-03-26 2010-03-25 半導体基板、半導体装置及び半導体基板の製造方法 Active JP5636203B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010071059A JP5636203B2 (ja) 2009-03-26 2010-03-25 半導体基板、半導体装置及び半導体基板の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009076472 2009-03-26
JP2009076472 2009-03-26
JP2010071059A JP5636203B2 (ja) 2009-03-26 2010-03-25 半導体基板、半導体装置及び半導体基板の製造方法

Publications (3)

Publication Number Publication Date
JP2010251737A JP2010251737A (ja) 2010-11-04
JP2010251737A5 true JP2010251737A5 (https=) 2013-05-09
JP5636203B2 JP5636203B2 (ja) 2014-12-03

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ID=42780588

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JP2010071059A Active JP5636203B2 (ja) 2009-03-26 2010-03-25 半導体基板、半導体装置及び半導体基板の製造方法

Country Status (5)

Country Link
US (1) US8501598B2 (https=)
EP (1) EP2413348B1 (https=)
JP (1) JP5636203B2 (https=)
CN (1) CN102362336B (https=)
WO (1) WO2010109892A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5706674B2 (ja) * 2010-11-24 2015-04-22 セイコーインスツル株式会社 定電流回路及び基準電圧回路
JP2013258327A (ja) * 2012-06-13 2013-12-26 Toshiba Corp 半導体装置及びその製造方法
JP5812029B2 (ja) 2012-06-13 2015-11-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2015162492A (ja) * 2014-02-26 2015-09-07 豊田合成株式会社 半導体装置の製造方法
JP6150075B2 (ja) * 2014-05-01 2017-06-21 信越半導体株式会社 エピタキシャルウェーハの製造方法
EP4379808A3 (en) 2015-12-15 2024-11-20 General Electric Company Edge termination designs for silicon carbide super-junction power devices
CN106876463A (zh) * 2016-12-28 2017-06-20 全球能源互联网研究院 一种超结碳化硅器件及其制备方法
JP6857351B2 (ja) * 2017-02-28 2021-04-14 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7089329B2 (ja) * 2018-11-13 2022-06-22 株式会社豊田中央研究所 半導体装置とその製造方法
JP7077252B2 (ja) * 2019-02-27 2022-05-30 株式会社東芝 半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100565801C (zh) * 2004-03-31 2009-12-02 株式会社电装 半导体器件的制造方法
JP4773716B2 (ja) 2004-03-31 2011-09-14 株式会社デンソー 半導体基板の製造方法
JP3961503B2 (ja) * 2004-04-05 2007-08-22 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
JP4939760B2 (ja) * 2005-03-01 2012-05-30 株式会社東芝 半導体装置
JP5150048B2 (ja) * 2005-09-29 2013-02-20 株式会社デンソー 半導体基板の製造方法
JP5015440B2 (ja) * 2005-09-29 2012-08-29 株式会社デンソー 半導体基板の製造方法
DE102006045912B4 (de) * 2005-09-29 2011-07-21 Sumco Corp. Verfahren zur Fertigung einer Halbleitervorrichtung und Epitaxialwachstumseinrichtung
WO2007116420A1 (en) * 2006-04-11 2007-10-18 Stmicroelectronics S.R.L. Process for manufacturing a semiconductor power device and respective device
JP5217257B2 (ja) * 2007-06-06 2013-06-19 株式会社デンソー 半導体装置およびその製造方法

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