JP5634194B2 - 放射線撮像装置及びその制御方法 - Google Patents

放射線撮像装置及びその制御方法 Download PDF

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JP5634194B2
JP5634194B2 JP2010217454A JP2010217454A JP5634194B2 JP 5634194 B2 JP5634194 B2 JP 5634194B2 JP 2010217454 A JP2010217454 A JP 2010217454A JP 2010217454 A JP2010217454 A JP 2010217454A JP 5634194 B2 JP5634194 B2 JP 5634194B2
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signal
photoelectric conversion
radiation
control
accumulation
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JP2010217454A
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Japanese (ja)
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JP2012074864A5 (enExample
JP2012074864A (ja
Inventor
可菜子 堂脇
可菜子 堂脇
松本　和正
和正 松本
齋藤　秀彦
秀彦 齋藤
貴史 山▲崎▼
貴史 山▲崎▼
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Canon Inc
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Canon Inc
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Priority to JP2010217454A priority Critical patent/JP5634194B2/ja
Priority to US13/237,734 priority patent/US8988572B2/en
Publication of JP2012074864A publication Critical patent/JP2012074864A/ja
Publication of JP2012074864A5 publication Critical patent/JP2012074864A5/ja
Application granted granted Critical
Publication of JP5634194B2 publication Critical patent/JP5634194B2/ja
Priority to US14/619,988 priority patent/US9565384B2/en
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2010217454A 2010-09-28 2010-09-28 放射線撮像装置及びその制御方法 Expired - Fee Related JP5634194B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010217454A JP5634194B2 (ja) 2010-09-28 2010-09-28 放射線撮像装置及びその制御方法
US13/237,734 US8988572B2 (en) 2010-09-28 2011-09-20 Radiation imaging apparatus including radiation detection unit having a plurality of photoelectric conversion units, and control method therefor
US14/619,988 US9565384B2 (en) 2010-09-28 2015-02-11 Radiation imaging apparatus and control method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010217454A JP5634194B2 (ja) 2010-09-28 2010-09-28 放射線撮像装置及びその制御方法

Related Child Applications (1)

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JP2014154676A Division JP5921615B2 (ja) 2014-07-30 2014-07-30 放射線撮像装置及びその制御方法

Publications (3)

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JP2012074864A JP2012074864A (ja) 2012-04-12
JP2012074864A5 JP2012074864A5 (enExample) 2013-11-14
JP5634194B2 true JP5634194B2 (ja) 2014-12-03

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US (2) US8988572B2 (enExample)
JP (1) JP5634194B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6272046B2 (ja) * 2014-01-22 2018-01-31 キヤノン株式会社 放射線撮像装置、その制御方法、及び放射線検査装置
JP6399788B2 (ja) 2014-04-14 2018-10-03 キヤノン株式会社 放射線撮像装置、その駆動方法および放射線検査装置
JP6821351B2 (ja) * 2016-07-25 2021-01-27 キヤノン株式会社 放射線撮像装置、放射線撮像システム、放射線撮像装置の制御方法
JP6968797B2 (ja) * 2016-07-28 2021-11-17 ソニーセミコンダクタソリューションズ株式会社 撮像素子
JP6974948B2 (ja) 2017-02-10 2021-12-01 キヤノン株式会社 放射線撮像装置および放射線撮像方法
JP2018192024A (ja) * 2017-05-18 2018-12-06 コニカミノルタ株式会社 放射線画像撮影システム
FR3085541A1 (fr) * 2018-08-28 2020-03-06 Commissariat A L'energie Atomique Et Aux Energies Alternatives Pixel à obturateur global en mode de tension
CN112640433B (zh) * 2019-01-08 2024-07-12 松下知识产权经营株式会社 摄像装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006198416A (ja) * 1996-02-26 2006-08-03 Canon Inc 放射線撮像システム
JP2001111020A (ja) * 1999-10-04 2001-04-20 Canon Inc 撮像装置および撮像システム
JP3636291B2 (ja) * 2000-01-31 2005-04-06 オリンパス株式会社 撮像装置
US6855937B2 (en) * 2001-05-18 2005-02-15 Canon Kabushiki Kaisha Image pickup apparatus
JP4724313B2 (ja) 2001-05-18 2011-07-13 キヤノン株式会社 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
JP4208482B2 (ja) * 2002-05-08 2009-01-14 キヤノン株式会社 撮像装置及び同撮像装置を用いたｘ線診断システム
JP4114540B2 (ja) * 2003-05-21 2008-07-09 日産自動車株式会社 イメージセンサー
JP3800207B2 (ja) * 2003-07-18 2006-07-26 ソニー株式会社 撮像装置
US7692704B2 (en) * 2003-12-25 2010-04-06 Canon Kabushiki Kaisha Imaging apparatus for processing noise signal and photoelectric conversion signal
EP1732134B1 (en) * 2004-02-27 2012-10-24 National University Corporation Tohoku Unversity Solid-state imagine device, line sensor, optical sensor, and method for operating solid-state imaging device
JP5247007B2 (ja) * 2005-06-09 2013-07-24 キヤノン株式会社 撮像装置及び撮像システム
JP4355747B2 (ja) * 2007-03-05 2009-11-04 キヤノン株式会社 光電変換装置及び光電変換システム並びにその駆動方法
US7929035B2 (en) * 2007-03-08 2011-04-19 Imagerlabs, Inc. Ultra low noise CMOS imager
US20090103827A1 (en) * 2007-10-19 2009-04-23 John Ladd Methods, systems, and apparatuses that compensate for noise generated in an imager device
US7884865B2 (en) * 2007-12-10 2011-02-08 Intel Corporation High speed noise detection and reduction in active pixel sensor arrays
TWI422020B (zh) * 2008-12-08 2014-01-01 Sony Corp 固態成像裝置
US8184188B2 (en) * 2009-03-12 2012-05-22 Micron Technology, Inc. Methods and apparatus for high dynamic operation of a pixel cell

Also Published As

Publication number Publication date
US9565384B2 (en) 2017-02-07
US20150156438A1 (en) 2015-06-04
US20120075515A1 (en) 2012-03-29
US8988572B2 (en) 2015-03-24
JP2012074864A (ja) 2012-04-12

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