JP5629784B2 - グラフェンファイバーの製造方法、グラフェンファイバー、グラフェン電線、及び同軸ケーブル - Google Patents
グラフェンファイバーの製造方法、グラフェンファイバー、グラフェン電線、及び同軸ケーブル Download PDFInfo
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Description
1.ニッケル(Ni)薄膜上に大面的グラフェンの成長
シリコーン基板上にSiO2絶縁層を形成し、前記絶縁層上にニッケル薄膜を蒸着した。フォトレジストを利用したリソグラフィ工程を通じて前記ニッケル薄膜を複数の線状パターンに形成し、線状パターンの線幅が1、2、3、4、5mmである場合をそれぞれ製造した。次に、前記ニッケル薄膜が形成された基板を反応チャンバ内に導入し、180mTorrで10sccmH2を流しながら前記基板を1,000℃に加熱した。前記基板の温度が1,000℃に到逹した後、前記水素の流れ及び圧力を維持しながら30分間アニーリングした。次に、炭素ソースを含むガス混合物(CH4:H2=30:10sccm)を1.6Torrで15分間供給し、グラフェンを前記線状パターンのニッケル薄膜上に成長させた後、180mTorr圧力下でH2を流しながら短時間に〜10℃/sの速度で室温に冷却することで、前記線状パターンのニッケル薄膜上に成長した線状パターンのグラフェンを収得した。
上記の工程によって製造された線状パターンのグラフェンが形成された基板を0.5MFeCl3水溶液及びエチルアルコールが1:1の体積で混合されたエッチング溶液内に含浸させ、前記ニッケル薄膜を選択的に除去することで、複数の線状グラフェンを前記エッチング溶液中に分散させた。以後、ピンセットを使用して線状グラフェンの一部領域を取り、これを前記エッチング溶液の外部に引き出すことでグラフェンファイバーを製造した(図1又は図2参照)。
Claims (17)
- 基板上に複数の線状パターンを含む金属層を形成し、
前記線状パターンの金属層上に炭素ソースを含む反応ガス及び熱を提供して反応させることで線状パターンのグラフェンを形成し、
前記基板をエッチング溶液内に含浸させて前記線状パターンの金属層を選択的に除去することで、前記基板から前記線状パターンのグラフェンを分離して前記エッチング溶液中に複数の線状グラフェンを分散させ、及び
前記分散した複数の線状グラフェンを前記エッチング溶液の外部に引き出してグラフェンファイバー(graphene fiber)を形成することを含む,グラフェンファイバーの製造方法。 - 前記エッチング溶液は、水、エッチャント及び有機溶媒を含むものである、請求項1に記載のグラフェンファイバーの製造方法。
- 前記エッチャントは、過硫酸アンモニウム[(NH4)2S2O8]、酸(acid)、BOE、Fe(NO3)3、塩化鉄(FeCl3)、及びCuCl2 からなる群から選択される少なくとも一つの化合物を含むものである、請求項2に記載のグラフェンファイバーの製造方法。
- 前記有機溶媒は、親水性基を有することで前記水と混合されることができることを特徴とする請求項2に記載のグラフェンファイバーの製造方法。
- 前記グラフェンファイバーは、前記エッチング溶液中に分散した複数の線状グラフェンを前記エッチング溶液の外部に引き出すと同時に、回転させて捩って形成されるものである、請求項1に記載のグラフェンファイバーの製造方法。
- 前記金属層は、Ni、Co、Fe、Pt、Au、Al、Cr、Cu、Mg、Mn、Mo、Rh、Si、Ta、Ti、W、U、V、Zr、黄銅(brass)、青銅(bronze)、白銅、ステンレススチール(stainless steel)及びGeからなる群から選択される少なくとも一つの金属または合金を含むものである、請求項1に記載のグラフェンファイバーの製造方法。
- 前記線状パターンの金属層の線幅は、1nm乃至100mmである、請求項1に記載のグラフェンファイバーの製造方法。
- 前記グラフェンファイバーの直径は、前記線状パターンの金属層の線幅に応じて調節されるものである、請求項1に記載のグラフェンファイバーの製造方法。
- 複数の線状グラフェンが連結されて形成されたグラフェンファイバーであって、絶縁性物質を含むコア上に巻かれているものである、請求項1〜請求項8のいずれか一項によって製造されるものである、グラフェンファイバー。
- 請求項9に記載のグラフェンファイバー、及び
当該グラフェンファイバーを囲む絶縁体を含む、グラフェン電線。 - 前記絶縁体は、エナメル、フォトレジスト樹脂、PMMA[Poly(methyl methacrylate)]、PET(Polyethylene Terephthalate)、PVA(poly vinyl alcohol)、及びPI(polyimide)からなる群から選択される少なくとも一つである、請求項10に記載のグラフェン電線。
- 請求項9に記載のグラフェンファイバーを含むコア(core)伝導体、
前記コア伝導体を囲む絶縁体、
前記絶縁体を囲む外部伝導体、及び
前記外部伝導体を囲む外被部を含む、同軸ケーブル。 - 前記コア伝導体は、金属部材の表面に前記グラフェンファイバーが形成されたものである、請求項12に記載の同軸ケーブル。
- 前記金属部材は、金属管または金属ワイヤを含むものである、請求項13に記載の同軸ケーブル。
- 前記金属部材を形成する金属は、Ni、Co、Fe、Pt、Au、Al、Cr、Cu、Mg、Mn、Mo、Rh、Si、Ta、Ti、W、U、V、Zr、黄銅(brass)、青銅(bronze)、白銅、ステンレススチール(stainless steel)及びGeからなる群から選択される少なくとも一つの金属または合金を含むものである、請求項13に記載の同軸ケーブル。
- 前記金属部材上の前記グラフェンファイバーは、ロ−ルツーロ−ル工程によって形成されるものである、請求項13に記載の同軸ケーブル。
- 前記ロ−ルツーロ−ル工程は、
ロ−ルツーロ−ル方式によって第1ローラーから帯状(band)または線状(line)の前記金属部材を前処理部に供給して表面処理するステップ、
前記前処理部を通過した前記帯状(band)または線状(line)の金属部材を合成部に移動させて前記金属部材上にグラフェンファイバーを合成と同時にコーティングするステップ、及び
前記合成部を通過した前記帯状(band)または線状(line)の金属部材をロ−ルツーロ−ル方式によって第2ローラーに巻いて回収するステップを含むことである、請求項16に記載の同軸ケーブル。
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KR20100012084 | 2010-02-09 | ||
KR10-2010-0012084 | 2010-02-09 | ||
PCT/KR2011/000850 WO2011099761A2 (ko) | 2010-02-09 | 2011-02-09 | 그래핀 파이버, 이의 제조 방법 및 이의 용도 |
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JP2013518804A JP2013518804A (ja) | 2013-05-23 |
JP5629784B2 true JP5629784B2 (ja) | 2014-11-26 |
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EP (2) | EP3352179B1 (ja) |
JP (1) | JP5629784B2 (ja) |
KR (1) | KR101235291B1 (ja) |
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