JP5598338B2 - 記憶装置およびその動作方法 - Google Patents

記憶装置およびその動作方法 Download PDF

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Publication number
JP5598338B2
JP5598338B2 JP2011004830A JP2011004830A JP5598338B2 JP 5598338 B2 JP5598338 B2 JP 5598338B2 JP 2011004830 A JP2011004830 A JP 2011004830A JP 2011004830 A JP2011004830 A JP 2011004830A JP 5598338 B2 JP5598338 B2 JP 5598338B2
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Japan
Prior art keywords
resistance state
memory
potential
word line
memory element
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Expired - Fee Related
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JP2011004830A
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English (en)
Japanese (ja)
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JP2012146368A (ja
JP2012146368A5 (enExample
Inventor
渉 大塚
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Sony Corp
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Sony Corp
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Priority to JP2011004830A priority Critical patent/JP5598338B2/ja
Priority to US13/337,969 priority patent/US9019755B2/en
Priority to CN201210009739XA priority patent/CN102592656A/zh
Publication of JP2012146368A publication Critical patent/JP2012146368A/ja
Publication of JP2012146368A5 publication Critical patent/JP2012146368A5/ja
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Publication of JP5598338B2 publication Critical patent/JP5598338B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D71/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans or pop bottles; Bales of material
    • B65D71/06—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers
    • B65D71/12—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers the packaging elements, e.g. wrappers being formed by folding a single blank
    • B65D71/14—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers the packaging elements, e.g. wrappers being formed by folding a single blank having the shape of a tube, without, or not being characterised by, end walls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D71/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans or pop bottles; Bales of material
    • B65D71/06—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers
    • B65D71/12—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers the packaging elements, e.g. wrappers being formed by folding a single blank
    • B65D71/125—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers the packaging elements, e.g. wrappers being formed by folding a single blank not having a tubular shape
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D2571/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans, pop bottles; Bales of material
    • B65D2571/00123—Bundling wrappers or trays
    • B65D2571/00833—Other details of wrappers
    • B65D2571/00907—Other details of wrappers for accommodating articles in different positions or arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0071—Write using write potential applied to access device gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0073—Write using bi-directional cell biasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/74—Array wherein each memory cell has more than one access device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/24—Nonvolatile memory in which programming can be carried out in one memory bank or array whilst a word or sector in another bank or array is being erased simultaneously

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
JP2011004830A 2011-01-13 2011-01-13 記憶装置およびその動作方法 Expired - Fee Related JP5598338B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011004830A JP5598338B2 (ja) 2011-01-13 2011-01-13 記憶装置およびその動作方法
US13/337,969 US9019755B2 (en) 2011-01-13 2011-12-27 Memory unit and method of operating the same
CN201210009739XA CN102592656A (zh) 2011-01-13 2012-01-13 存储装置和其操作方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011004830A JP5598338B2 (ja) 2011-01-13 2011-01-13 記憶装置およびその動作方法

Publications (3)

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JP2012146368A JP2012146368A (ja) 2012-08-02
JP2012146368A5 JP2012146368A5 (enExample) 2014-02-13
JP5598338B2 true JP5598338B2 (ja) 2014-10-01

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JP2011004830A Expired - Fee Related JP5598338B2 (ja) 2011-01-13 2011-01-13 記憶装置およびその動作方法

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US (1) US9019755B2 (enExample)
JP (1) JP5598338B2 (enExample)
CN (1) CN102592656A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9053784B2 (en) 2012-04-12 2015-06-09 Micron Technology, Inc. Apparatuses and methods for providing set and reset voltages at the same time
JP6272235B2 (ja) * 2012-12-03 2018-01-31 ソニーセミコンダクタソリューションズ株式会社 記憶素子および記憶装置
WO2014103691A1 (ja) * 2012-12-25 2014-07-03 ソニー株式会社 記憶素子および記憶装置
KR102151183B1 (ko) 2014-06-30 2020-09-02 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작방법
JP6457792B2 (ja) * 2014-11-19 2019-01-23 ルネサスエレクトロニクス株式会社 半導体記憶装置
WO2016143383A1 (ja) * 2015-03-09 2016-09-15 ソニー株式会社 メモリセルおよび記憶装置
US10998044B2 (en) 2017-01-20 2021-05-04 Hefei Reliance Memory Limited RRAM write using a ramp control circuit
US10002665B1 (en) * 2017-04-05 2018-06-19 Arm Ltd. Memory devices formed from correlated electron materials
US11164627B2 (en) * 2019-01-25 2021-11-02 Micron Technology, Inc. Polarity-written cell architectures for a memory device
CN110739012B (zh) * 2019-09-12 2021-07-20 杭州未名信科科技有限公司 存储阵列块及半导体存储器
US10978149B1 (en) * 2020-05-12 2021-04-13 Winbond Electronics Corp. Resistive memory apparatus and adjusting method for write-in voltage thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6590807B2 (en) * 2001-08-02 2003-07-08 Intel Corporation Method for reading a structural phase-change memory
CN1628357B (zh) * 2002-08-14 2010-05-05 英特尔公司 读取结构相变存储器的方法
JP2005032401A (ja) * 2003-06-17 2005-02-03 Sharp Corp 不揮発性半導体記憶装置及びその書き込み方法と消去方法
JP4830275B2 (ja) * 2004-07-22 2011-12-07 ソニー株式会社 記憶素子
JP2006099866A (ja) 2004-09-29 2006-04-13 Sony Corp 記憶装置及び半導体装置
JP4815804B2 (ja) 2005-01-11 2011-11-16 ソニー株式会社 記憶素子及び記憶装置
JP4475174B2 (ja) * 2005-06-09 2010-06-09 ソニー株式会社 記憶装置
US7345907B2 (en) * 2005-07-11 2008-03-18 Sandisk 3D Llc Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements
US7460389B2 (en) * 2005-07-29 2008-12-02 International Business Machines Corporation Write operations for phase-change-material memory
US8058636B2 (en) 2007-03-29 2011-11-15 Panasonic Corporation Variable resistance nonvolatile memory apparatus
US7890892B2 (en) * 2007-11-15 2011-02-15 International Business Machines Corporation Balanced and bi-directional bit line paths for memory arrays with programmable memory cells
JP5549105B2 (ja) * 2009-04-15 2014-07-16 ソニー株式会社 抵抗変化型メモリデバイスおよびその動作方法
JP5149414B2 (ja) * 2010-07-16 2013-02-20 シャープ株式会社 半導体記憶装置およびその駆動方法
JP2013004151A (ja) * 2011-06-20 2013-01-07 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
CN102592656A (zh) 2012-07-18
JP2012146368A (ja) 2012-08-02
US9019755B2 (en) 2015-04-28
US20120182785A1 (en) 2012-07-19

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