CN102592656A - 存储装置和其操作方法 - Google Patents

存储装置和其操作方法 Download PDF

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Publication number
CN102592656A
CN102592656A CN201210009739XA CN201210009739A CN102592656A CN 102592656 A CN102592656 A CN 102592656A CN 201210009739X A CN201210009739X A CN 201210009739XA CN 201210009739 A CN201210009739 A CN 201210009739A CN 102592656 A CN102592656 A CN 102592656A
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China
Prior art keywords
memory element
potential
memory
word line
bit line
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Pending
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CN201210009739XA
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English (en)
Chinese (zh)
Inventor
大塚涉
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Sony Corp
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Sony Corp
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Publication of CN102592656A publication Critical patent/CN102592656A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D71/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans or pop bottles; Bales of material
    • B65D71/06—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers
    • B65D71/12—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers the packaging elements, e.g. wrappers being formed by folding a single blank
    • B65D71/14—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers the packaging elements, e.g. wrappers being formed by folding a single blank having the shape of a tube, without, or not being characterised by, end walls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D71/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans or pop bottles; Bales of material
    • B65D71/06—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers
    • B65D71/12—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers the packaging elements, e.g. wrappers being formed by folding a single blank
    • B65D71/125—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers the packaging elements, e.g. wrappers being formed by folding a single blank not having a tubular shape
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D2571/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans, pop bottles; Bales of material
    • B65D2571/00123—Bundling wrappers or trays
    • B65D2571/00833—Other details of wrappers
    • B65D2571/00907—Other details of wrappers for accommodating articles in different positions or arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0071—Write using write potential applied to access device gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0073—Write using bi-directional cell biasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/74—Array wherein each memory cell has more than one access device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/24—Nonvolatile memory in which programming can be carried out in one memory bank or array whilst a word or sector in another bank or array is being erased simultaneously

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
CN201210009739XA 2011-01-13 2012-01-13 存储装置和其操作方法 Pending CN102592656A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011004830A JP5598338B2 (ja) 2011-01-13 2011-01-13 記憶装置およびその動作方法
JP2011-004830 2011-08-18

Publications (1)

Publication Number Publication Date
CN102592656A true CN102592656A (zh) 2012-07-18

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US (1) US9019755B2 (enExample)
JP (1) JP5598338B2 (enExample)
CN (1) CN102592656A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104871314A (zh) * 2012-12-25 2015-08-26 索尼公司 存储元件和存储装置
CN110226203A (zh) * 2017-01-20 2019-09-10 合肥睿科微电子有限公司 Rram写入
CN110462742A (zh) * 2017-04-05 2019-11-15 Arm有限公司 由关联电子材料制成的存储器件
CN110739012A (zh) * 2019-09-12 2020-01-31 浙江省北大信息技术高等研究院 存储阵列块及半导体存储器

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9053784B2 (en) 2012-04-12 2015-06-09 Micron Technology, Inc. Apparatuses and methods for providing set and reset voltages at the same time
US9761796B2 (en) 2012-12-03 2017-09-12 Sony Corporation Storage device and storage unit with ion source layer and resistance change layer
KR102151183B1 (ko) 2014-06-30 2020-09-02 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작방법
JP6457792B2 (ja) * 2014-11-19 2019-01-23 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP6677240B2 (ja) * 2015-03-09 2020-04-08 ソニー株式会社 メモリセルおよび記憶装置
US11164627B2 (en) * 2019-01-25 2021-11-02 Micron Technology, Inc. Polarity-written cell architectures for a memory device
US10978149B1 (en) * 2020-05-12 2021-04-13 Winbond Electronics Corp. Resistive memory apparatus and adjusting method for write-in voltage thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1628357A (zh) * 2002-08-14 2005-06-15 英特尔公司 读取结构相变存储器的方法
US20070008786A1 (en) * 2005-07-11 2007-01-11 Scheuerlein Roy E Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements
WO2008126365A1 (ja) * 2007-03-29 2008-10-23 Panasonic Corporation 不揮発性記憶装置、不揮発性記憶素子および不揮発性記憶素子アレイ

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US6590807B2 (en) * 2001-08-02 2003-07-08 Intel Corporation Method for reading a structural phase-change memory
JP2005032401A (ja) * 2003-06-17 2005-02-03 Sharp Corp 不揮発性半導体記憶装置及びその書き込み方法と消去方法
JP4830275B2 (ja) * 2004-07-22 2011-12-07 ソニー株式会社 記憶素子
JP2006099866A (ja) 2004-09-29 2006-04-13 Sony Corp 記憶装置及び半導体装置
JP4815804B2 (ja) 2005-01-11 2011-11-16 ソニー株式会社 記憶素子及び記憶装置
JP4475174B2 (ja) * 2005-06-09 2010-06-09 ソニー株式会社 記憶装置
US7460389B2 (en) * 2005-07-29 2008-12-02 International Business Machines Corporation Write operations for phase-change-material memory
US7890892B2 (en) * 2007-11-15 2011-02-15 International Business Machines Corporation Balanced and bi-directional bit line paths for memory arrays with programmable memory cells
JP5549105B2 (ja) * 2009-04-15 2014-07-16 ソニー株式会社 抵抗変化型メモリデバイスおよびその動作方法
JP5149414B2 (ja) * 2010-07-16 2013-02-20 シャープ株式会社 半導体記憶装置およびその駆動方法
JP2013004151A (ja) * 2011-06-20 2013-01-07 Toshiba Corp 半導体記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1628357A (zh) * 2002-08-14 2005-06-15 英特尔公司 读取结构相变存储器的方法
US20070008786A1 (en) * 2005-07-11 2007-01-11 Scheuerlein Roy E Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements
WO2008126365A1 (ja) * 2007-03-29 2008-10-23 Panasonic Corporation 不揮発性記憶装置、不揮発性記憶素子および不揮発性記憶素子アレイ

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104871314A (zh) * 2012-12-25 2015-08-26 索尼公司 存储元件和存储装置
US10879312B2 (en) 2012-12-25 2020-12-29 Sony Corporation Memory device and memory unit
CN110226203A (zh) * 2017-01-20 2019-09-10 合肥睿科微电子有限公司 Rram写入
CN110226203B (zh) * 2017-01-20 2022-12-09 合肥睿科微电子有限公司 Rram写入
US11682457B2 (en) 2017-01-20 2023-06-20 Hefei Reliance Memory Limited Method of RRAM write ramping voltage in intervals
US12327587B2 (en) 2017-01-20 2025-06-10 Hefei Reliance Memory Limited Method of RRAM write ramping voltage in intervals
CN110462742A (zh) * 2017-04-05 2019-11-15 Arm有限公司 由关联电子材料制成的存储器件
CN110462742B (zh) * 2017-04-05 2023-09-05 Arm有限公司 由关联电子材料制成的存储器件
CN110739012A (zh) * 2019-09-12 2020-01-31 浙江省北大信息技术高等研究院 存储阵列块及半导体存储器

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Publication number Publication date
JP2012146368A (ja) 2012-08-02
US20120182785A1 (en) 2012-07-19
US9019755B2 (en) 2015-04-28
JP5598338B2 (ja) 2014-10-01

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Application publication date: 20120718