JP5579078B2 - ハロゲンシラン中の元素、例えばホウ素の含分を低減させるための装置及び方法 - Google Patents
ハロゲンシラン中の元素、例えばホウ素の含分を低減させるための装置及び方法 Download PDFInfo
- Publication number
- JP5579078B2 JP5579078B2 JP2010542547A JP2010542547A JP5579078B2 JP 5579078 B2 JP5579078 B2 JP 5579078B2 JP 2010542547 A JP2010542547 A JP 2010542547A JP 2010542547 A JP2010542547 A JP 2010542547A JP 5579078 B2 JP5579078 B2 JP 5579078B2
- Authority
- JP
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- Prior art keywords
- halogen
- content
- boron
- distillation
- high purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 229910052736 halogen Inorganic materials 0.000 title claims description 90
- 238000000034 method Methods 0.000 title claims description 47
- 229910052796 boron Inorganic materials 0.000 title claims description 43
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims description 42
- -1 halogen silanes Chemical class 0.000 title claims description 42
- 238000004821 distillation Methods 0.000 claims description 62
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 50
- 150000002367 halogens Chemical class 0.000 claims description 50
- 229910000077 silane Inorganic materials 0.000 claims description 50
- JBWKIWSBJXDJDT-UHFFFAOYSA-N triphenylmethyl chloride Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(Cl)C1=CC=CC=C1 JBWKIWSBJXDJDT-UHFFFAOYSA-N 0.000 claims description 46
- 150000001875 compounds Chemical class 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 26
- 239000012535 impurity Substances 0.000 claims description 21
- 238000010668 complexation reaction Methods 0.000 claims description 16
- 230000000737 periodic effect Effects 0.000 claims description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims description 15
- 239000011574 phosphorus Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 11
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 10
- 230000000536 complexating effect Effects 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 9
- 239000005052 trichlorosilane Substances 0.000 claims description 9
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 7
- 239000005046 Chlorosilane Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000007664 blowing Methods 0.000 claims description 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 2
- 238000010924 continuous production Methods 0.000 claims 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 17
- 239000005049 silicon tetrachloride Substances 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000011541 reaction mixture Substances 0.000 description 11
- 238000009835 boiling Methods 0.000 description 10
- 239000002244 precipitate Substances 0.000 description 10
- 229910003902 SiCl 4 Inorganic materials 0.000 description 6
- 239000008139 complexing agent Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000000746 purification Methods 0.000 description 5
- PBAYDYUZOSNJGU-UHFFFAOYSA-N chelidonic acid Natural products OC(=O)C1=CC(=O)C=C(C(O)=O)O1 PBAYDYUZOSNJGU-UHFFFAOYSA-N 0.000 description 4
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 4
- 238000005647 hydrohalogenation reaction Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- UOFGSWVZMUXXIY-UHFFFAOYSA-N 1,5-Diphenyl-3-thiocarbazone Chemical compound C=1C=CC=CC=1N=NC(=S)NNC1=CC=CC=C1 UOFGSWVZMUXXIY-UHFFFAOYSA-N 0.000 description 1
- AZUYLZMQTIKGSC-UHFFFAOYSA-N 1-[6-[4-(5-chloro-6-methyl-1H-indazol-4-yl)-5-methyl-3-(1-methylindazol-5-yl)pyrazol-1-yl]-2-azaspiro[3.3]heptan-2-yl]prop-2-en-1-one Chemical compound ClC=1C(=C2C=NNC2=CC=1C)C=1C(=NN(C=1C)C1CC2(CN(C2)C(C=C)=O)C1)C=1C=C2C=NN(C2=CC=1)C AZUYLZMQTIKGSC-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 229910003691 SiBr Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 150000001639 boron compounds Chemical group 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- VQPFDLRNOCQMSN-UHFFFAOYSA-N bromosilane Chemical class Br[SiH3] VQPFDLRNOCQMSN-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- VEYJKODKHGEDMC-UHFFFAOYSA-N dichloro(trichlorosilyl)silicon Chemical compound Cl[Si](Cl)[Si](Cl)(Cl)Cl VEYJKODKHGEDMC-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- IBOKZQNMFSHYNQ-UHFFFAOYSA-N tribromosilane Chemical compound Br[SiH](Br)Br IBOKZQNMFSHYNQ-UHFFFAOYSA-N 0.000 description 1
- VYFXMIAQVGXIIN-UHFFFAOYSA-N trichloro(chlorosilyl)silane Chemical compound Cl[SiH2][Si](Cl)(Cl)Cl VYFXMIAQVGXIIN-UHFFFAOYSA-N 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- PZKOFHKJGUNVTM-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyl)silyl]silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl PZKOFHKJGUNVTM-UHFFFAOYSA-N 0.000 description 1
- MSQITEWLCPTJBF-UHFFFAOYSA-N trichloro-[dichloro-[dichloro(trichlorosilyl)silyl]silyl]silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl MSQITEWLCPTJBF-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
- C01B33/10794—Purification by forming addition compounds or complexes, the reactant being possibly contained in an adsorbent
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008004396A DE102008004396A1 (de) | 2008-01-14 | 2008-01-14 | Anlage und Verfahren zur Verminderung des Gehaltes von Elementen, wie Bor, in Halogensilanen |
| DE102008004396.6 | 2008-01-14 | ||
| PCT/EP2008/065902 WO2009089951A2 (de) | 2008-01-14 | 2008-11-20 | Anlage und verfahren zur verminderung des gehaltes von elementen, wie bor, in halogensilanen |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011514871A JP2011514871A (ja) | 2011-05-12 |
| JP2011514871A5 JP2011514871A5 (enExample) | 2011-10-20 |
| JP5579078B2 true JP5579078B2 (ja) | 2014-08-27 |
Family
ID=40758535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010542547A Expired - Fee Related JP5579078B2 (ja) | 2008-01-14 | 2008-11-20 | ハロゲンシラン中の元素、例えばホウ素の含分を低減させるための装置及び方法 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20110052474A1 (enExample) |
| EP (1) | EP2252549A2 (enExample) |
| JP (1) | JP5579078B2 (enExample) |
| KR (1) | KR20100112576A (enExample) |
| CN (1) | CN101486464A (enExample) |
| BR (1) | BRPI0822003A2 (enExample) |
| CA (1) | CA2710796A1 (enExample) |
| DE (1) | DE102008004396A1 (enExample) |
| RU (1) | RU2502669C2 (enExample) |
| UA (1) | UA101175C2 (enExample) |
| WO (1) | WO2009089951A2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITRM20040570A1 (it) | 2004-11-19 | 2005-02-19 | Memc Electronic Materials | Procedimento e impianto di purificazione di triclorosilano e di tetracloruro di silicio. |
| DE102005041137A1 (de) | 2005-08-30 | 2007-03-01 | Degussa Ag | Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid |
| DE102008054537A1 (de) * | 2008-12-11 | 2010-06-17 | Evonik Degussa Gmbh | Entfernung von Fremdmetallen aus Siliciumverbindungen durch Adsorption und/oder Filtration |
| DE102009027730A1 (de) | 2009-07-15 | 2011-01-27 | Evonik Degussa Gmbh | Verahren und Verwendung von aminofunktionellen Harzen zur Dismutierung von Halogensilanen und zur Entfernung von Fremdmetallen |
| DE102009053804B3 (de) | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
| DE102010002342A1 (de) | 2010-02-25 | 2011-08-25 | Evonik Degussa GmbH, 45128 | Verwendung der spezifischen Widerstandsmessung zur indirekten Bestimmung der Reinheit von Silanen und Germanen und ein entsprechendes Verfahren |
| CN101817527B (zh) * | 2010-04-16 | 2012-01-25 | 浙江中宁硅业有限公司 | 一种多晶硅生产过程中的电子级硅烷精制提纯的方法 |
| DE102010042693A1 (de) | 2010-10-20 | 2012-04-26 | Robert Bosch Gmbh | Verfahren zur Aufbereitung eines Bilddatenstroms |
| DE102011004058A1 (de) | 2011-02-14 | 2012-08-16 | Evonik Degussa Gmbh | Monochlorsilan, Verfahren und Vorrichtung zu dessen Herstellung |
| DE102011004750A1 (de) | 2011-02-25 | 2012-08-30 | Evonik Degussa Gmbh | Vorrichtung und Verfahren zum Verarbeiten eines SiO2-haltigen Materials |
| WO2013101431A1 (en) * | 2011-12-30 | 2013-07-04 | Memc Electronic Materials, Inc. | Processes and systems for purifying silane |
| JP6095613B2 (ja) * | 2014-07-10 | 2017-03-15 | 信越化学工業株式会社 | クロロシランの精製方法 |
| CN107098328A (zh) * | 2017-05-05 | 2017-08-29 | 石兵兵 | 一种低硼碳质还原剂及其制备方法 |
| EP3659964A1 (en) | 2018-11-28 | 2020-06-03 | Hysilabs, SAS | Catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds |
| EP4065512B1 (de) | 2019-11-27 | 2024-03-20 | Wacker Chemie AG | Verfahren zur entfernung einer verunreinigung aus einem chlorsilangemisch |
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| US80746A (en) * | 1868-08-04 | Improvement is hand coei-planter | ||
| US266849A (en) * | 1882-10-31 | Scoop | ||
| US259063A (en) * | 1882-06-06 | Kokrad von falkenhausen | ||
| US283972A (en) * | 1883-08-28 | Tube-coupling | ||
| US270296A (en) * | 1883-01-09 | Theodore w | ||
| US274028A (en) * | 1883-03-13 | Island | ||
| US320072A (en) * | 1885-06-16 | Fire-proof lath for slates | ||
| US20413A (en) * | 1858-06-01 | Improvement in sewing-machines | ||
| US197014A (en) * | 1877-11-13 | Improvement in devices for hitching horses | ||
| US2812235A (en) * | 1955-09-16 | 1957-11-05 | Bell Telephone Labor Inc | Method of purifying volatile compounds of germanium and silicon |
| NL235008A (enExample) * | 1958-01-11 | |||
| FR1518553A (fr) | 1960-03-11 | 1968-03-29 | Pechiney Prod Chimiques Sa | Procédé de purification de composés volatils de germanium et de silicium |
| DE1792651A1 (de) * | 1968-09-28 | 1971-11-25 | Dynamit Nobel Ag | Verfahren zur Reinigung von Chlorsilanen |
| US4092446A (en) * | 1974-07-31 | 1978-05-30 | Texas Instruments Incorporated | Process of refining impure silicon to produce purified electronic grade silicon |
| US4321246A (en) * | 1980-05-09 | 1982-03-23 | Motorola, Inc. | Polycrystalline silicon production |
| US4374110A (en) * | 1981-06-15 | 1983-02-15 | Motorola, Inc. | Purification of silicon source materials |
| US4526769A (en) * | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
| DE3828549A1 (de) * | 1988-08-23 | 1990-03-08 | Huels Chemische Werke Ag | Verfahren zur entfernung von silanverbindungen aus silanhaltigen abgasen |
| US5026553A (en) * | 1989-08-07 | 1991-06-25 | Dale E. Swinney | Swinney's hair growth formula |
| RU1835386C (ru) * | 1991-04-17 | 1993-08-23 | Запорожский титано-магниевый комбинат | Способ очистки хлорсиланов |
| EP0702017B1 (de) * | 1994-09-14 | 2001-11-14 | Degussa AG | Verfahren zur Herstellung von chloridarmen bzw. chloridfreien aminofunktionellen Organosilanen |
| DE19516386A1 (de) * | 1995-05-04 | 1996-11-07 | Huels Chemische Werke Ag | Verfahren zur Herstellung von an chlorfunktionellen Organosilanen armen bzw. freien aminofunktionellen Organosilanen |
| DE19520737C2 (de) * | 1995-06-07 | 2003-04-24 | Degussa | Verfahren zur Herstellung von Alkylhydrogenchlorsilanen |
| DE19649023A1 (de) * | 1996-11-27 | 1998-05-28 | Huels Chemische Werke Ag | Verfahren zur Entfernung von Restmengen an acidem Chlor in Carbonoyloxysilanen |
| DE19746862A1 (de) * | 1997-10-23 | 1999-04-29 | Huels Chemische Werke Ag | Vorrichtung und Verfahren für Probenahme und IR-spektroskopische Analyse von hochreinen, hygroskopischen Flüssigkeiten |
| DE19821156B4 (de) * | 1998-05-12 | 2006-04-06 | Degussa Ag | Verfahren zur Minderung von Resthalogengehalten und Farbzahlverbesserung in Alkoxysilanen oder Alkoxysilan-basierenden Zusammensetzungen und die Verwendung von Aktivkohle dazu |
| DE19847786A1 (de) * | 1998-10-16 | 2000-04-20 | Degussa | Vorrichtung und Verfahren zum Befüllen und Entleeren eines mit brennbarem sowie aggressivem Gas beaufschlagten Behälters |
| DE19849196A1 (de) * | 1998-10-26 | 2000-04-27 | Degussa | Verfahren zur Neutralisation und Minderung von Resthalogengehalten in Alkoxysilanen oder Alkoxysilan-basierenden Zusammensetzungen |
| ATE284406T1 (de) * | 1998-11-06 | 2004-12-15 | Degussa | Verfahren zur herstellung von chloridarmen oder chloridfreien alkoxysilanen |
| DE19918114C2 (de) * | 1999-04-22 | 2002-01-03 | Degussa | Verfahren und Vorrichtung zur Herstellung von Vinylchlorsilanen |
| DE19918115C2 (de) * | 1999-04-22 | 2002-01-03 | Degussa | Verfahren zur Herstellung von Vinylchlorsilanen |
| DE19963433A1 (de) * | 1999-12-28 | 2001-07-12 | Degussa | Verfahren zur Abscheidung von Chlorsilanen aus Gasströmen |
| DE10116007A1 (de) * | 2001-03-30 | 2002-10-02 | Degussa | Vorrichtung und Verfahren zur Herstellung von im Wesentlichen halogenfreien Trialkoxysilanen |
| DE10330022A1 (de) * | 2003-07-03 | 2005-01-20 | Degussa Ag | Verfahren zur Herstellung von Iow-k dielektrischen Filmen |
| DE102004025766A1 (de) * | 2004-05-26 | 2005-12-22 | Degussa Ag | Herstellung von Organosilanestern |
| DE102004037675A1 (de) * | 2004-08-04 | 2006-03-16 | Degussa Ag | Verfahren und Vorrichtung zur Reinigung von Wasserstoffverbindungen enthaltendem Siliciumtetrachlorid oder Germaniumtetrachlorid |
| ITRM20040570A1 (it) * | 2004-11-19 | 2005-02-19 | Memc Electronic Materials | Procedimento e impianto di purificazione di triclorosilano e di tetracloruro di silicio. |
| DE102005041137A1 (de) * | 2005-08-30 | 2007-03-01 | Degussa Ag | Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid |
| DE102006042685A1 (de) * | 2006-09-12 | 2008-03-27 | Wacker Chemie Ag | Verfahren und Vorrichtung zur kontaminationsfreien Erwärmung von Gasen |
| DE102009053804B3 (de) * | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
-
2008
- 2008-01-14 DE DE102008004396A patent/DE102008004396A1/de not_active Withdrawn
- 2008-11-20 CA CA2710796A patent/CA2710796A1/en not_active Abandoned
- 2008-11-20 EP EP08871093A patent/EP2252549A2/de not_active Ceased
- 2008-11-20 US US12/812,857 patent/US20110052474A1/en not_active Abandoned
- 2008-11-20 UA UAA201010055A patent/UA101175C2/ru unknown
- 2008-11-20 KR KR1020107015483A patent/KR20100112576A/ko not_active Ceased
- 2008-11-20 WO PCT/EP2008/065902 patent/WO2009089951A2/de not_active Ceased
- 2008-11-20 JP JP2010542547A patent/JP5579078B2/ja not_active Expired - Fee Related
- 2008-11-20 BR BRPI0822003-4A patent/BRPI0822003A2/pt not_active IP Right Cessation
- 2008-11-20 RU RU2010133877/05A patent/RU2502669C2/ru not_active IP Right Cessation
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2009
- 2009-01-13 CN CNA2009100022353A patent/CN101486464A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA2710796A1 (en) | 2009-07-23 |
| RU2502669C2 (ru) | 2013-12-27 |
| EP2252549A2 (de) | 2010-11-24 |
| US20110052474A1 (en) | 2011-03-03 |
| JP2011514871A (ja) | 2011-05-12 |
| WO2009089951A3 (de) | 2011-01-27 |
| BRPI0822003A2 (pt) | 2015-07-21 |
| WO2009089951A2 (de) | 2009-07-23 |
| CN101486464A (zh) | 2009-07-22 |
| KR20100112576A (ko) | 2010-10-19 |
| UA101175C2 (ru) | 2013-03-11 |
| RU2010133877A (ru) | 2012-02-27 |
| DE102008004396A1 (de) | 2009-07-16 |
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