BRPI0822003A2 - Instalação e processo para a redução do teor de elementos, tais como boro, em halogenossilanos. - Google Patents

Instalação e processo para a redução do teor de elementos, tais como boro, em halogenossilanos.

Info

Publication number
BRPI0822003A2
BRPI0822003A2 BRPI0822003-4A BRPI0822003A BRPI0822003A2 BR PI0822003 A2 BRPI0822003 A2 BR PI0822003A2 BR PI0822003 A BRPI0822003 A BR PI0822003A BR PI0822003 A2 BRPI0822003 A2 BR PI0822003A2
Authority
BR
Brazil
Prior art keywords
halosilanes
boron
installation
reducing
elements
Prior art date
Application number
BRPI0822003-4A
Other languages
English (en)
Portuguese (pt)
Inventor
Ekkehard Müh
Hartwig Rauleder
Reinhold Schork
Original Assignee
Evonik Degussa Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa Gmbh filed Critical Evonik Degussa Gmbh
Publication of BRPI0822003A2 publication Critical patent/BRPI0822003A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/10778—Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/10778—Purification
    • C01B33/10794—Purification by forming addition compounds or complexes, the reactant being possibly contained in an adsorbent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
BRPI0822003-4A 2008-01-14 2008-11-20 Instalação e processo para a redução do teor de elementos, tais como boro, em halogenossilanos. BRPI0822003A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008004396A DE102008004396A1 (de) 2008-01-14 2008-01-14 Anlage und Verfahren zur Verminderung des Gehaltes von Elementen, wie Bor, in Halogensilanen
PCT/EP2008/065902 WO2009089951A2 (de) 2008-01-14 2008-11-20 Anlage und verfahren zur verminderung des gehaltes von elementen, wie bor, in halogensilanen

Publications (1)

Publication Number Publication Date
BRPI0822003A2 true BRPI0822003A2 (pt) 2015-07-21

Family

ID=40758535

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0822003-4A BRPI0822003A2 (pt) 2008-01-14 2008-11-20 Instalação e processo para a redução do teor de elementos, tais como boro, em halogenossilanos.

Country Status (11)

Country Link
US (1) US20110052474A1 (enExample)
EP (1) EP2252549A2 (enExample)
JP (1) JP5579078B2 (enExample)
KR (1) KR20100112576A (enExample)
CN (1) CN101486464A (enExample)
BR (1) BRPI0822003A2 (enExample)
CA (1) CA2710796A1 (enExample)
DE (1) DE102008004396A1 (enExample)
RU (1) RU2502669C2 (enExample)
UA (1) UA101175C2 (enExample)
WO (1) WO2009089951A2 (enExample)

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ITRM20040570A1 (it) * 2004-11-19 2005-02-19 Memc Electronic Materials Procedimento e impianto di purificazione di triclorosilano e di tetracloruro di silicio.
DE102005041137A1 (de) 2005-08-30 2007-03-01 Degussa Ag Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid
DE102008054537A1 (de) * 2008-12-11 2010-06-17 Evonik Degussa Gmbh Entfernung von Fremdmetallen aus Siliciumverbindungen durch Adsorption und/oder Filtration
DE102009027730A1 (de) 2009-07-15 2011-01-27 Evonik Degussa Gmbh Verahren und Verwendung von aminofunktionellen Harzen zur Dismutierung von Halogensilanen und zur Entfernung von Fremdmetallen
DE102009053804B3 (de) 2009-11-18 2011-03-17 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102010002342A1 (de) 2010-02-25 2011-08-25 Evonik Degussa GmbH, 45128 Verwendung der spezifischen Widerstandsmessung zur indirekten Bestimmung der Reinheit von Silanen und Germanen und ein entsprechendes Verfahren
CN101817527B (zh) * 2010-04-16 2012-01-25 浙江中宁硅业有限公司 一种多晶硅生产过程中的电子级硅烷精制提纯的方法
DE102010042693A1 (de) 2010-10-20 2012-04-26 Robert Bosch Gmbh Verfahren zur Aufbereitung eines Bilddatenstroms
DE102011004058A1 (de) 2011-02-14 2012-08-16 Evonik Degussa Gmbh Monochlorsilan, Verfahren und Vorrichtung zu dessen Herstellung
DE102011004750A1 (de) 2011-02-25 2012-08-30 Evonik Degussa Gmbh Vorrichtung und Verfahren zum Verarbeiten eines SiO2-haltigen Materials
KR102012535B1 (ko) * 2011-12-30 2019-08-20 코너 스타 리미티드 실란의 정제를 위한 방법 및 시스템
JP6095613B2 (ja) * 2014-07-10 2017-03-15 信越化学工業株式会社 クロロシランの精製方法
CN107098328A (zh) * 2017-05-05 2017-08-29 石兵兵 一种低硼碳质还原剂及其制备方法
EP3659964A1 (en) 2018-11-28 2020-06-03 Hysilabs, SAS Catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds
JP7512388B2 (ja) 2019-11-27 2024-07-08 ワッカー ケミー アクチエンゲゼルシャフト クロロシラン混合物から不純物を除去する方法

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US4092446A (en) * 1974-07-31 1978-05-30 Texas Instruments Incorporated Process of refining impure silicon to produce purified electronic grade silicon
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EP0702017B1 (de) * 1994-09-14 2001-11-14 Degussa AG Verfahren zur Herstellung von chloridarmen bzw. chloridfreien aminofunktionellen Organosilanen
DE19516386A1 (de) * 1995-05-04 1996-11-07 Huels Chemische Werke Ag Verfahren zur Herstellung von an chlorfunktionellen Organosilanen armen bzw. freien aminofunktionellen Organosilanen
DE19520737C2 (de) * 1995-06-07 2003-04-24 Degussa Verfahren zur Herstellung von Alkylhydrogenchlorsilanen
DE19649023A1 (de) * 1996-11-27 1998-05-28 Huels Chemische Werke Ag Verfahren zur Entfernung von Restmengen an acidem Chlor in Carbonoyloxysilanen
DE19746862A1 (de) * 1997-10-23 1999-04-29 Huels Chemische Werke Ag Vorrichtung und Verfahren für Probenahme und IR-spektroskopische Analyse von hochreinen, hygroskopischen Flüssigkeiten
DE19821156B4 (de) * 1998-05-12 2006-04-06 Degussa Ag Verfahren zur Minderung von Resthalogengehalten und Farbzahlverbesserung in Alkoxysilanen oder Alkoxysilan-basierenden Zusammensetzungen und die Verwendung von Aktivkohle dazu
DE19847786A1 (de) * 1998-10-16 2000-04-20 Degussa Vorrichtung und Verfahren zum Befüllen und Entleeren eines mit brennbarem sowie aggressivem Gas beaufschlagten Behälters
DE19849196A1 (de) * 1998-10-26 2000-04-27 Degussa Verfahren zur Neutralisation und Minderung von Resthalogengehalten in Alkoxysilanen oder Alkoxysilan-basierenden Zusammensetzungen
EP0999214B1 (de) * 1998-11-06 2004-12-08 Degussa AG Verfahren zur Herstellung von chloridarmen oder chloridfreien Alkoxysilanen
DE19918114C2 (de) * 1999-04-22 2002-01-03 Degussa Verfahren und Vorrichtung zur Herstellung von Vinylchlorsilanen
DE19918115C2 (de) * 1999-04-22 2002-01-03 Degussa Verfahren zur Herstellung von Vinylchlorsilanen
DE19963433A1 (de) * 1999-12-28 2001-07-12 Degussa Verfahren zur Abscheidung von Chlorsilanen aus Gasströmen
DE10116007A1 (de) * 2001-03-30 2002-10-02 Degussa Vorrichtung und Verfahren zur Herstellung von im Wesentlichen halogenfreien Trialkoxysilanen
DE10330022A1 (de) * 2003-07-03 2005-01-20 Degussa Ag Verfahren zur Herstellung von Iow-k dielektrischen Filmen
DE102004025766A1 (de) * 2004-05-26 2005-12-22 Degussa Ag Herstellung von Organosilanestern
DE102004037675A1 (de) * 2004-08-04 2006-03-16 Degussa Ag Verfahren und Vorrichtung zur Reinigung von Wasserstoffverbindungen enthaltendem Siliciumtetrachlorid oder Germaniumtetrachlorid
ITRM20040570A1 (it) * 2004-11-19 2005-02-19 Memc Electronic Materials Procedimento e impianto di purificazione di triclorosilano e di tetracloruro di silicio.
DE102005041137A1 (de) * 2005-08-30 2007-03-01 Degussa Ag Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid
DE102006042685A1 (de) * 2006-09-12 2008-03-27 Wacker Chemie Ag Verfahren und Vorrichtung zur kontaminationsfreien Erwärmung von Gasen
DE102009053804B3 (de) * 2009-11-18 2011-03-17 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen

Also Published As

Publication number Publication date
EP2252549A2 (de) 2010-11-24
JP2011514871A (ja) 2011-05-12
RU2502669C2 (ru) 2013-12-27
WO2009089951A3 (de) 2011-01-27
KR20100112576A (ko) 2010-10-19
JP5579078B2 (ja) 2014-08-27
WO2009089951A2 (de) 2009-07-23
CN101486464A (zh) 2009-07-22
US20110052474A1 (en) 2011-03-03
RU2010133877A (ru) 2012-02-27
UA101175C2 (ru) 2013-03-11
CA2710796A1 (en) 2009-07-23
DE102008004396A1 (de) 2009-07-16

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 6A E 7A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2344 DE 08-12-2015 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.