JP5546361B2 - 可変抵抗回路を備えた半導体集積回路 - Google Patents

可変抵抗回路を備えた半導体集積回路 Download PDF

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Publication number
JP5546361B2
JP5546361B2 JP2010133266A JP2010133266A JP5546361B2 JP 5546361 B2 JP5546361 B2 JP 5546361B2 JP 2010133266 A JP2010133266 A JP 2010133266A JP 2010133266 A JP2010133266 A JP 2010133266A JP 5546361 B2 JP5546361 B2 JP 5546361B2
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JP
Japan
Prior art keywords
circuit
output
resistance
terminal
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010133266A
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English (en)
Japanese (ja)
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JP2011258827A5 (enExample
JP2011258827A (ja
Inventor
文靖 宇都宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2010133266A priority Critical patent/JP5546361B2/ja
Priority to TW100118647A priority patent/TWI535218B/zh
Priority to US13/155,028 priority patent/US8587358B2/en
Priority to KR1020110055692A priority patent/KR101783484B1/ko
Priority to CN201110153796.0A priority patent/CN102332908B/zh
Publication of JP2011258827A publication Critical patent/JP2011258827A/ja
Publication of JP2011258827A5 publication Critical patent/JP2011258827A5/ja
Application granted granted Critical
Publication of JP5546361B2 publication Critical patent/JP5546361B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/561—Voltage to current converters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/16—Resistor networks not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C10/00—Adjustable resistors
    • H01C10/50—Adjustable resistors structurally combined with switching arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
JP2010133266A 2010-06-10 2010-06-10 可変抵抗回路を備えた半導体集積回路 Expired - Fee Related JP5546361B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010133266A JP5546361B2 (ja) 2010-06-10 2010-06-10 可変抵抗回路を備えた半導体集積回路
TW100118647A TWI535218B (zh) 2010-06-10 2011-05-27 A semiconductor integrated circuit having a variable resistance circuit
US13/155,028 US8587358B2 (en) 2010-06-10 2011-06-07 Semiconductor integrated circuit including variable resistor circuit
KR1020110055692A KR101783484B1 (ko) 2010-06-10 2011-06-09 가변 저항 회로를 구비한 반도체 집적 회로
CN201110153796.0A CN102332908B (zh) 2010-06-10 2011-06-09 具有可变电阻电路的半导体集成电路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010133266A JP5546361B2 (ja) 2010-06-10 2010-06-10 可変抵抗回路を備えた半導体集積回路

Publications (3)

Publication Number Publication Date
JP2011258827A JP2011258827A (ja) 2011-12-22
JP2011258827A5 JP2011258827A5 (enExample) 2013-05-30
JP5546361B2 true JP5546361B2 (ja) 2014-07-09

Family

ID=45095744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010133266A Expired - Fee Related JP5546361B2 (ja) 2010-06-10 2010-06-10 可変抵抗回路を備えた半導体集積回路

Country Status (5)

Country Link
US (1) US8587358B2 (enExample)
JP (1) JP5546361B2 (enExample)
KR (1) KR101783484B1 (enExample)
CN (1) CN102332908B (enExample)
TW (1) TWI535218B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8847655B2 (en) * 2012-05-22 2014-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Binary control arrangement and method of making and using the same
US9608586B2 (en) 2014-09-25 2017-03-28 Qualcomm Incorporated Voltage-to-current converter
JP6900832B2 (ja) * 2017-08-09 2021-07-07 富士電機株式会社 調光装置および電力変換装置
JP2019149395A (ja) * 2018-02-26 2019-09-05 セイコーエプソン株式会社 可変抵抗回路、発振回路、及び、半導体装置
CN115862538A (zh) * 2023-01-04 2023-03-28 京东方科技集团股份有限公司 显示模组及其供电电路、终端设备
CN116185120A (zh) * 2023-02-28 2023-05-30 深圳市紫光同创电子有限公司 一种温度特性电压产生电路、芯片和电子设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235282A (ja) * 1992-02-26 1993-09-10 Fujitsu Ltd 半導体集積回路
US5703588A (en) * 1996-10-15 1997-12-30 Atmel Corporation Digital to analog converter with dual resistor string
JP2944573B2 (ja) * 1997-06-05 1999-09-06 日本電気アイシーマイコンシステム株式会社 半導体集積回路
US6150971A (en) * 1999-06-22 2000-11-21 Burr-Brown Corporation R/2R' ladder switch circuit and method for digital-to-analog converter
US6373266B1 (en) * 2000-03-31 2002-04-16 Agere Systems Guardian Corp. Apparatus and method for determining process width variations in integrated circuits
US6504417B1 (en) * 2001-08-15 2003-01-07 International Business Machines Corporation Active trim circuit for CMOS on-chip resistors
JP3843974B2 (ja) * 2003-09-29 2006-11-08 セイコーエプソン株式会社 表示駆動回路
JP4696701B2 (ja) * 2005-06-07 2011-06-08 ソニー株式会社 抵抗回路
JP2008123586A (ja) * 2006-11-09 2008-05-29 Toshiba Corp 半導体装置
JP4944673B2 (ja) * 2007-06-01 2012-06-06 パナソニック株式会社 電圧発生回路、アナログ・デジタル変換回路、イメージセンサシステム
JP2008306145A (ja) * 2007-06-11 2008-12-18 Toshiba Corp 抵抗調整回路及び半導体集積回路

Also Published As

Publication number Publication date
TWI535218B (zh) 2016-05-21
KR20110135347A (ko) 2011-12-16
US8587358B2 (en) 2013-11-19
TW201214980A (en) 2012-04-01
CN102332908B (zh) 2015-10-28
CN102332908A (zh) 2012-01-25
KR101783484B1 (ko) 2017-09-29
US20110304376A1 (en) 2011-12-15
JP2011258827A (ja) 2011-12-22

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