JP5539029B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

Info

Publication number
JP5539029B2
JP5539029B2 JP2010123297A JP2010123297A JP5539029B2 JP 5539029 B2 JP5539029 B2 JP 5539029B2 JP 2010123297 A JP2010123297 A JP 2010123297A JP 2010123297 A JP2010123297 A JP 2010123297A JP 5539029 B2 JP5539029 B2 JP 5539029B2
Authority
JP
Japan
Prior art keywords
pixels
imaging device
state imaging
ion implantation
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010123297A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011249680A5 (enExample
JP2011249680A (ja
Inventor
岳彦 曽田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2010123297A priority Critical patent/JP5539029B2/ja
Priority to US13/096,703 priority patent/US8349640B2/en
Priority to CN201110134968.XA priority patent/CN102263115B/zh
Publication of JP2011249680A publication Critical patent/JP2011249680A/ja
Publication of JP2011249680A5 publication Critical patent/JP2011249680A5/ja
Application granted granted Critical
Publication of JP5539029B2 publication Critical patent/JP5539029B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2010123297A 2010-05-28 2010-05-28 固体撮像装置の製造方法 Expired - Fee Related JP5539029B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010123297A JP5539029B2 (ja) 2010-05-28 2010-05-28 固体撮像装置の製造方法
US13/096,703 US8349640B2 (en) 2010-05-28 2011-04-28 Method of manufacturing solid-state image sensor
CN201110134968.XA CN102263115B (zh) 2010-05-28 2011-05-24 固态图像传感器的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010123297A JP5539029B2 (ja) 2010-05-28 2010-05-28 固体撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2011249680A JP2011249680A (ja) 2011-12-08
JP2011249680A5 JP2011249680A5 (enExample) 2013-07-04
JP5539029B2 true JP5539029B2 (ja) 2014-07-02

Family

ID=45009683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010123297A Expired - Fee Related JP5539029B2 (ja) 2010-05-28 2010-05-28 固体撮像装置の製造方法

Country Status (3)

Country Link
US (1) US8349640B2 (enExample)
JP (1) JP5539029B2 (enExample)
CN (1) CN102263115B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6018376B2 (ja) 2011-12-05 2016-11-02 キヤノン株式会社 固体撮像装置およびカメラ
JP6008669B2 (ja) 2012-09-19 2016-10-19 キヤノン株式会社 固体撮像素子およびその製造方法ならびにカメラ
JP6162999B2 (ja) 2013-04-15 2017-07-12 キヤノン株式会社 固体撮像装置およびカメラ
JP2014225536A (ja) 2013-05-15 2014-12-04 キヤノン株式会社 固体撮像装置及びカメラ
JP6305028B2 (ja) * 2013-11-22 2018-04-04 キヤノン株式会社 光電変換装置の製造方法および光電変換装置
WO2015128908A1 (ja) 2014-02-26 2015-09-03 パナソニックＩｐマネジメント株式会社 深さ位置検出装置、撮像素子、及び深さ位置検出方法
JP2016058635A (ja) * 2014-09-11 2016-04-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6541361B2 (ja) 2015-02-05 2019-07-10 キヤノン株式会社 固体撮像装置
US9768213B2 (en) 2015-06-03 2017-09-19 Canon Kabushiki Kaisha Solid-state image sensor and camera
CN111741200B (zh) * 2016-04-08 2021-12-21 佳能株式会社 图像传感器和摄像设备
JP6738200B2 (ja) 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
WO2018141750A1 (en) 2017-01-31 2018-08-09 Multibase Sa Thermoplastic composition
WO2020045278A1 (en) 2018-08-31 2020-03-05 Canon Kabushiki Kaisha Imaging device with motion dependent pixel binning

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10321550A (ja) * 1997-05-21 1998-12-04 Sony Corp 半導体装置の製造方法
JPH11274454A (ja) * 1998-03-19 1999-10-08 Canon Inc 固体撮像装置及びその形成方法
JP2001168343A (ja) * 1999-12-13 2001-06-22 Mitsubishi Electric Corp 半導体装置、液晶表示装置、半導体装置の製造方法、液晶表示装置の製造方法
JP5224633B2 (ja) * 2004-03-30 2013-07-03 キヤノン株式会社 半導体装置の製造方法
EP1976014B1 (en) * 2004-07-20 2011-01-05 Fujitsu Semiconductor Limited CMOS imaging device
KR100598015B1 (ko) 2005-02-07 2006-07-06 삼성전자주식회사 공유 구조 상보성 금속 산화막 반도체 액티브 픽셀 센서어레이의 레이 아웃
JP4518996B2 (ja) * 2005-04-22 2010-08-04 シャープ株式会社 固体撮像装置の製造方法および電子情報装置
US8446508B2 (en) * 2005-07-27 2013-05-21 Sony Corporation Solid state imaging device with optimized locations of internal electrical components
JP2008060380A (ja) 2006-08-31 2008-03-13 Matsushita Electric Ind Co Ltd 固体撮像素子及びその製造方法
JP4429368B2 (ja) * 2007-12-26 2010-03-10 日本ユニサンティスエレクトロニクス株式会社 固体撮像素子、固体撮像装置及びその製造方法
JP4788742B2 (ja) * 2008-06-27 2011-10-05 ソニー株式会社 固体撮像装置及び電子機器
KR101544511B1 (ko) * 2009-04-21 2015-08-13 삼성전자주식회사 게터링 영역들을 갖는 이미지 센서의 제조 방법

Also Published As

Publication number Publication date
US8349640B2 (en) 2013-01-08
JP2011249680A (ja) 2011-12-08
CN102263115A (zh) 2011-11-30
US20110294251A1 (en) 2011-12-01
CN102263115B (zh) 2014-04-23

Similar Documents

Publication Publication Date Title
JP5539029B2 (ja) 固体撮像装置の製造方法
JP5864990B2 (ja) 固体撮像装置およびカメラ
US7592579B2 (en) Photoelectric conversion device manufacturing method, semiconductor device manufacturing method, photoelectric conversion device, and image sensing system
US7709869B2 (en) Photoelectric conversion device, method of manufacturing the same, and image sensing system
KR101220642B1 (ko) 고체 촬상 장치
US20210020676A1 (en) Image sensor and method of fabricating the same
JP2010206181A (ja) 光電変換装置及び撮像システム
US10734420B2 (en) Image sensor having an N-type photodiode and a P-type photodiode
JP2012182377A (ja) 固体撮像装置
JP2011124451A (ja) 固体撮像装置およびカメラ
JP2012109540A (ja) 固体撮像装置の製造方法
US8383497B2 (en) Method for manufacturing solid-state image sensor
JP5517503B2 (ja) 固体撮像装置
WO2016035494A1 (ja) 固体撮像装置
JP5896776B2 (ja) 撮像装置、撮像システム、および撮像装置の製造方法。
JP2015035449A (ja) 固体撮像装置および固体撮像装置の製造方法
JP5414781B2 (ja) 光電変換装置の製造方法
JP4216935B2 (ja) 半導体装置の製造方法
CN219591402U (zh) 一种像素阵列及图像传感器
US20250016471A1 (en) Imaging device
US8399946B1 (en) Solid-state imaging device and manufacturing method thereof
JP4779781B2 (ja) 固体撮像装置とその製造方法
JP2015173180A (ja) 固体撮像装置およびその製造方法
JP5056928B2 (ja) 固体撮像素子及びその製造方法
JP5330476B2 (ja) 固体撮像装置およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130517

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130517

TRDD Decision of grant or rejection written
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140328

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140331

R151 Written notification of patent or utility model registration

Ref document number: 5539029

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140430

LAPS Cancellation because of no payment of annual fees