CN102263115B - 固态图像传感器的制造方法 - Google Patents

固态图像传感器的制造方法 Download PDF

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Publication number
CN102263115B
CN102263115B CN201110134968.XA CN201110134968A CN102263115B CN 102263115 B CN102263115 B CN 102263115B CN 201110134968 A CN201110134968 A CN 201110134968A CN 102263115 B CN102263115 B CN 102263115B
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China
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grid
pixel
implantation
resist pattern
accumulating region
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Expired - Fee Related
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CN201110134968.XA
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English (en)
Chinese (zh)
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CN102263115A (zh
Inventor
曽田岳彦
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201110134968.XA 2010-05-28 2011-05-24 固态图像传感器的制造方法 Expired - Fee Related CN102263115B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-123297 2010-05-28
JP2010123297A JP5539029B2 (ja) 2010-05-28 2010-05-28 固体撮像装置の製造方法

Publications (2)

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CN102263115A CN102263115A (zh) 2011-11-30
CN102263115B true CN102263115B (zh) 2014-04-23

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US (1) US8349640B2 (enExample)
JP (1) JP5539029B2 (enExample)
CN (1) CN102263115B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6018376B2 (ja) 2011-12-05 2016-11-02 キヤノン株式会社 固体撮像装置およびカメラ
JP6008669B2 (ja) 2012-09-19 2016-10-19 キヤノン株式会社 固体撮像素子およびその製造方法ならびにカメラ
JP6162999B2 (ja) 2013-04-15 2017-07-12 キヤノン株式会社 固体撮像装置およびカメラ
JP2014225536A (ja) 2013-05-15 2014-12-04 キヤノン株式会社 固体撮像装置及びカメラ
JP6305028B2 (ja) * 2013-11-22 2018-04-04 キヤノン株式会社 光電変換装置の製造方法および光電変換装置
WO2015128908A1 (ja) 2014-02-26 2015-09-03 パナソニックＩｐマネジメント株式会社 深さ位置検出装置、撮像素子、及び深さ位置検出方法
JP2016058635A (ja) * 2014-09-11 2016-04-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6541361B2 (ja) 2015-02-05 2019-07-10 キヤノン株式会社 固体撮像装置
US9768213B2 (en) 2015-06-03 2017-09-19 Canon Kabushiki Kaisha Solid-state image sensor and camera
CN111741200B (zh) * 2016-04-08 2021-12-21 佳能株式会社 图像传感器和摄像设备
JP6738200B2 (ja) 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
EP3577158B1 (en) 2017-01-31 2023-08-16 Multibase SA Thermoplastic composition
WO2020045278A1 (en) 2018-08-31 2020-03-05 Canon Kabushiki Kaisha Imaging device with motion dependent pixel binning

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101615621A (zh) * 2008-06-27 2009-12-30 索尼株式会社 固体摄像装置和电子装置

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JPH10321550A (ja) * 1997-05-21 1998-12-04 Sony Corp 半導体装置の製造方法
JPH11274454A (ja) * 1998-03-19 1999-10-08 Canon Inc 固体撮像装置及びその形成方法
JP2001168343A (ja) * 1999-12-13 2001-06-22 Mitsubishi Electric Corp 半導体装置、液晶表示装置、半導体装置の製造方法、液晶表示装置の製造方法
JP5224633B2 (ja) * 2004-03-30 2013-07-03 キヤノン株式会社 半導体装置の製造方法
CN1993832B (zh) * 2004-07-20 2010-08-18 富士通微电子株式会社 Cmos摄像元件
KR100598015B1 (ko) 2005-02-07 2006-07-06 삼성전자주식회사 공유 구조 상보성 금속 산화막 반도체 액티브 픽셀 센서어레이의 레이 아웃
JP4518996B2 (ja) * 2005-04-22 2010-08-04 シャープ株式会社 固体撮像装置の製造方法および電子情報装置
US8446508B2 (en) * 2005-07-27 2013-05-21 Sony Corporation Solid state imaging device with optimized locations of internal electrical components
JP2008060380A (ja) 2006-08-31 2008-03-13 Matsushita Electric Ind Co Ltd 固体撮像素子及びその製造方法
JP4429368B2 (ja) * 2007-12-26 2010-03-10 日本ユニサンティスエレクトロニクス株式会社 固体撮像素子、固体撮像装置及びその製造方法
KR101544511B1 (ko) * 2009-04-21 2015-08-13 삼성전자주식회사 게터링 영역들을 갖는 이미지 센서의 제조 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101615621A (zh) * 2008-06-27 2009-12-30 索尼株式会社 固体摄像装置和电子装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2008-60380A 2008.03.13

Also Published As

Publication number Publication date
CN102263115A (zh) 2011-11-30
JP2011249680A (ja) 2011-12-08
US20110294251A1 (en) 2011-12-01
JP5539029B2 (ja) 2014-07-02
US8349640B2 (en) 2013-01-08

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