CN102263115B - 固态图像传感器的制造方法 - Google Patents

固态图像传感器的制造方法 Download PDF

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Publication number
CN102263115B
CN102263115B CN201110134968.XA CN201110134968A CN102263115B CN 102263115 B CN102263115 B CN 102263115B CN 201110134968 A CN201110134968 A CN 201110134968A CN 102263115 B CN102263115 B CN 102263115B
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pixel
resist pattern
semiconductor substrate
region
neighbor
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Expired - Fee Related
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CN201110134968.XA
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Chinese (zh)
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CN102263115A (zh
Inventor
曽田岳彦
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201110134968.XA 2010-05-28 2011-05-24 固态图像传感器的制造方法 Expired - Fee Related CN102263115B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-123297 2010-05-28
JP2010123297A JP5539029B2 (ja) 2010-05-28 2010-05-28 固体撮像装置の製造方法

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CN102263115A CN102263115A (zh) 2011-11-30
CN102263115B true CN102263115B (zh) 2014-04-23

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US (1) US8349640B2 (enExample)
JP (1) JP5539029B2 (enExample)
CN (1) CN102263115B (enExample)

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JP6018376B2 (ja) 2011-12-05 2016-11-02 キヤノン株式会社 固体撮像装置およびカメラ
JP6008669B2 (ja) 2012-09-19 2016-10-19 キヤノン株式会社 固体撮像素子およびその製造方法ならびにカメラ
JP6162999B2 (ja) 2013-04-15 2017-07-12 キヤノン株式会社 固体撮像装置およびカメラ
JP2014225536A (ja) 2013-05-15 2014-12-04 キヤノン株式会社 固体撮像装置及びカメラ
JP6305028B2 (ja) * 2013-11-22 2018-04-04 キヤノン株式会社 光電変換装置の製造方法および光電変換装置
WO2015128908A1 (ja) 2014-02-26 2015-09-03 パナソニックＩｐマネジメント株式会社 深さ位置検出装置、撮像素子、及び深さ位置検出方法
JP2016058635A (ja) * 2014-09-11 2016-04-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6541361B2 (ja) 2015-02-05 2019-07-10 キヤノン株式会社 固体撮像装置
US9768213B2 (en) 2015-06-03 2017-09-19 Canon Kabushiki Kaisha Solid-state image sensor and camera
CN111741200B (zh) * 2016-04-08 2021-12-21 佳能株式会社 图像传感器和摄像设备
JP6738200B2 (ja) 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
WO2018141750A1 (en) 2017-01-31 2018-08-09 Multibase Sa Thermoplastic composition
WO2020045278A1 (en) 2018-08-31 2020-03-05 Canon Kabushiki Kaisha Imaging device with motion dependent pixel binning

Citations (1)

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CN101615621A (zh) * 2008-06-27 2009-12-30 索尼株式会社 固体摄像装置和电子装置

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JPH10321550A (ja) * 1997-05-21 1998-12-04 Sony Corp 半導体装置の製造方法
JPH11274454A (ja) * 1998-03-19 1999-10-08 Canon Inc 固体撮像装置及びその形成方法
JP2001168343A (ja) * 1999-12-13 2001-06-22 Mitsubishi Electric Corp 半導体装置、液晶表示装置、半導体装置の製造方法、液晶表示装置の製造方法
JP5224633B2 (ja) * 2004-03-30 2013-07-03 キヤノン株式会社 半導体装置の製造方法
EP1976014B1 (en) * 2004-07-20 2011-01-05 Fujitsu Semiconductor Limited CMOS imaging device
KR100598015B1 (ko) 2005-02-07 2006-07-06 삼성전자주식회사 공유 구조 상보성 금속 산화막 반도체 액티브 픽셀 센서어레이의 레이 아웃
JP4518996B2 (ja) * 2005-04-22 2010-08-04 シャープ株式会社 固体撮像装置の製造方法および電子情報装置
US8446508B2 (en) * 2005-07-27 2013-05-21 Sony Corporation Solid state imaging device with optimized locations of internal electrical components
JP2008060380A (ja) 2006-08-31 2008-03-13 Matsushita Electric Ind Co Ltd 固体撮像素子及びその製造方法
JP4429368B2 (ja) * 2007-12-26 2010-03-10 日本ユニサンティスエレクトロニクス株式会社 固体撮像素子、固体撮像装置及びその製造方法
KR101544511B1 (ko) * 2009-04-21 2015-08-13 삼성전자주식회사 게터링 영역들을 갖는 이미지 센서의 제조 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101615621A (zh) * 2008-06-27 2009-12-30 索尼株式会社 固体摄像装置和电子装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2008-60380A 2008.03.13

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Publication number Publication date
JP5539029B2 (ja) 2014-07-02
US8349640B2 (en) 2013-01-08
JP2011249680A (ja) 2011-12-08
CN102263115A (zh) 2011-11-30
US20110294251A1 (en) 2011-12-01

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