JP5538797B2 - 電界効果型トランジスタ及び表示装置 - Google Patents

電界効果型トランジスタ及び表示装置 Download PDF

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Publication number
JP5538797B2
JP5538797B2 JP2009222514A JP2009222514A JP5538797B2 JP 5538797 B2 JP5538797 B2 JP 5538797B2 JP 2009222514 A JP2009222514 A JP 2009222514A JP 2009222514 A JP2009222514 A JP 2009222514A JP 5538797 B2 JP5538797 B2 JP 5538797B2
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JP
Japan
Prior art keywords
oxide semiconductor
amorphous oxide
semiconductor layer
layer
tft
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Expired - Fee Related
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JP2009222514A
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English (en)
Japanese (ja)
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JP2010161339A5 (enExample
JP2010161339A (ja
Inventor
未紀 上田
達哉 岩崎
奈穂 板垣
アミタ ゴヤル
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009222514A priority Critical patent/JP5538797B2/ja
Priority to EP09014995A priority patent/EP2197034B1/en
Priority to EP11009309A priority patent/EP2423966A1/en
Priority to US12/634,319 priority patent/US20100148170A1/en
Priority to KR1020090121626A priority patent/KR101215964B1/ko
Priority to CN2009102585023A priority patent/CN101752428B/zh
Publication of JP2010161339A publication Critical patent/JP2010161339A/ja
Publication of JP2010161339A5 publication Critical patent/JP2010161339A5/ja
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Publication of JP5538797B2 publication Critical patent/JP5538797B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Dram (AREA)
JP2009222514A 2008-12-12 2009-09-28 電界効果型トランジスタ及び表示装置 Expired - Fee Related JP5538797B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009222514A JP5538797B2 (ja) 2008-12-12 2009-09-28 電界効果型トランジスタ及び表示装置
EP11009309A EP2423966A1 (en) 2008-12-12 2009-12-03 Field effect transistor and display apparatus
EP09014995A EP2197034B1 (en) 2008-12-12 2009-12-03 Field effect transistor and display apparatus
KR1020090121626A KR101215964B1 (ko) 2008-12-12 2009-12-09 전계 효과형 트랜지스터 및 표시장치
US12/634,319 US20100148170A1 (en) 2008-12-12 2009-12-09 Field effect transistor and display apparatus
CN2009102585023A CN101752428B (zh) 2008-12-12 2009-12-11 场效应晶体管、场效应晶体管的制造方法和显示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008317286 2008-12-12
JP2008317286 2008-12-12
JP2009222514A JP5538797B2 (ja) 2008-12-12 2009-09-28 電界効果型トランジスタ及び表示装置

Publications (3)

Publication Number Publication Date
JP2010161339A JP2010161339A (ja) 2010-07-22
JP2010161339A5 JP2010161339A5 (enExample) 2012-11-08
JP5538797B2 true JP5538797B2 (ja) 2014-07-02

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Family Applications (1)

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JP2009222514A Expired - Fee Related JP5538797B2 (ja) 2008-12-12 2009-09-28 電界効果型トランジスタ及び表示装置

Country Status (5)

Country Link
US (1) US20100148170A1 (enExample)
EP (2) EP2423966A1 (enExample)
JP (1) JP5538797B2 (enExample)
KR (1) KR101215964B1 (enExample)
CN (1) CN101752428B (enExample)

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KR102089200B1 (ko) 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102479269B1 (ko) * 2010-01-20 2022-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 휴대 전화기
KR20180020327A (ko) * 2010-03-08 2018-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
JP2013531383A (ja) * 2010-07-02 2013-08-01 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 薄膜トランジスタ
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JP5052693B1 (ja) 2011-08-12 2012-10-17 富士フイルム株式会社 薄膜トランジスタ及びその製造方法、表示装置、イメージセンサー、ｘ線センサー並びにｘ線デジタル撮影装置
KR20140056392A (ko) * 2011-09-29 2014-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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KR20130046357A (ko) * 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102646676B (zh) * 2011-11-03 2015-06-10 京东方科技集团股份有限公司 一种tft阵列基板
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KR20130111874A (ko) * 2012-04-02 2013-10-11 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 표시 장치, 그리고 박막 트랜지스터의 제조 방법
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KR102227591B1 (ko) * 2012-10-17 2021-03-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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Also Published As

Publication number Publication date
KR101215964B1 (ko) 2012-12-27
US20100148170A1 (en) 2010-06-17
KR20100068196A (ko) 2010-06-22
EP2423966A1 (en) 2012-02-29
EP2197034A2 (en) 2010-06-16
CN101752428A (zh) 2010-06-23
CN101752428B (zh) 2011-12-21
EP2197034B1 (en) 2012-09-19
EP2197034A3 (en) 2010-06-30
JP2010161339A (ja) 2010-07-22

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