CN101752428B - 场效应晶体管、场效应晶体管的制造方法和显示装置 - Google Patents

场效应晶体管、场效应晶体管的制造方法和显示装置 Download PDF

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Publication number
CN101752428B
CN101752428B CN2009102585023A CN200910258502A CN101752428B CN 101752428 B CN101752428 B CN 101752428B CN 2009102585023 A CN2009102585023 A CN 2009102585023A CN 200910258502 A CN200910258502 A CN 200910258502A CN 101752428 B CN101752428 B CN 101752428B
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China
Prior art keywords
semiconductor layer
oxide semiconductor
amorphous oxide
effect transistor
layer
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Expired - Fee Related
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CN2009102585023A
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Chinese (zh)
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CN101752428A (zh
Inventor
上田未纪
岩崎达哉
板垣奈穗
高亚阿米达
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Dram (AREA)
CN2009102585023A 2008-12-12 2009-12-11 场效应晶体管、场效应晶体管的制造方法和显示装置 Expired - Fee Related CN101752428B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2008317286 2008-12-12
JP2008-317286 2008-12-12
JP2009222514A JP5538797B2 (ja) 2008-12-12 2009-09-28 電界効果型トランジスタ及び表示装置
JP2009-222514 2009-09-28

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CN101752428A CN101752428A (zh) 2010-06-23
CN101752428B true CN101752428B (zh) 2011-12-21

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US (1) US20100148170A1 (enExample)
EP (2) EP2423966A1 (enExample)
JP (1) JP5538797B2 (enExample)
KR (1) KR101215964B1 (enExample)
CN (1) CN101752428B (enExample)

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US8629432B2 (en) 2009-01-16 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8853690B2 (en) 2009-04-16 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor layer

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US8492756B2 (en) * 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102089200B1 (ko) 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102479269B1 (ko) * 2010-01-20 2022-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 휴대 전화기
KR20180020327A (ko) * 2010-03-08 2018-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
JP2013531383A (ja) * 2010-07-02 2013-08-01 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 薄膜トランジスタ
US8593858B2 (en) * 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
WO2012056933A1 (ja) * 2010-10-25 2012-05-03 株式会社日立製作所 酸化物半導体装置およびその製造方法
JP2012099661A (ja) * 2010-11-02 2012-05-24 Idemitsu Kosan Co Ltd 酸化物半導体の製造方法
KR101457833B1 (ko) 2010-12-03 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2012151453A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
TWI657565B (zh) 2011-01-14 2019-04-21 日商半導體能源研究所股份有限公司 半導體記憶裝置
JP6053098B2 (ja) * 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 半導体装置
JP5977569B2 (ja) * 2011-04-22 2016-08-24 株式会社神戸製鋼所 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置
JP2012238763A (ja) * 2011-05-12 2012-12-06 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4982620B1 (ja) * 2011-07-29 2012-07-25 富士フイルム株式会社 電界効果型トランジスタの製造方法、並びに、電界効果型トランジスタ、表示装置、イメージセンサ及びｘ線センサ
JP5052693B1 (ja) 2011-08-12 2012-10-17 富士フイルム株式会社 薄膜トランジスタ及びその製造方法、表示装置、イメージセンサー、ｘ線センサー並びにｘ線デジタル撮影装置
KR20140056392A (ko) * 2011-09-29 2014-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2013047629A1 (en) 2011-09-29 2013-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013093561A (ja) * 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 酸化物半導体膜及び半導体装置
IN2014DN03274A (enExample) 2011-10-14 2015-05-22 Semiconductor Energy Lab
KR20130046357A (ko) * 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102646676B (zh) * 2011-11-03 2015-06-10 京东方科技集团股份有限公司 一种tft阵列基板
US9082861B2 (en) * 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
KR101942980B1 (ko) 2012-01-17 2019-01-29 삼성디스플레이 주식회사 반도체 디바이스 및 그 형성 방법
KR20130111874A (ko) * 2012-04-02 2013-10-11 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 표시 장치, 그리고 박막 트랜지스터의 제조 방법
US9553201B2 (en) 2012-04-02 2017-01-24 Samsung Display Co., Ltd. Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor
KR20230004930A (ko) 2012-04-13 2023-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102227591B1 (ko) * 2012-10-17 2021-03-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102891183B (zh) * 2012-10-25 2015-09-30 深圳市华星光电技术有限公司 薄膜晶体管及主动矩阵式平面显示装置
US9171960B2 (en) * 2013-01-25 2015-10-27 Qualcomm Mems Technologies, Inc. Metal oxide layer composition control by atomic layer deposition for thin film transistor
US9373711B2 (en) * 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20140273342A1 (en) * 2013-03-13 2014-09-18 Applied Materials, Inc. Vth control method of multiple active layer metal oxide semiconductor tft
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
US9590111B2 (en) 2013-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6261125B2 (ja) * 2014-01-31 2018-01-17 国立研究開発法人物質・材料研究機構 酸化物薄膜トランジスタおよびその製造方法
TWI772799B (zh) * 2014-05-09 2022-08-01 日商半導體能源研究所股份有限公司 半導體裝置
CN104916703B (zh) 2015-05-07 2018-07-31 京东方科技集团股份有限公司 一种氧化物薄膜晶体管、阵列基板和显示装置
CN105280717B (zh) * 2015-09-23 2018-04-20 京东方科技集团股份有限公司 Tft及其制作方法、阵列基板及显示装置
KR101872421B1 (ko) * 2016-04-12 2018-06-28 충북대학교 산학협력단 산화물 반도체 기반의 트랜지스터 및 그 제조 방법
CN106711196B (zh) * 2016-10-20 2019-11-19 浙江大学 一种p型ZnGeSnO非晶氧化物半导体薄膜及其制备方法
CN108389947B (zh) * 2018-04-27 2024-03-26 芜湖德豪润达光电科技有限公司 发光二极管及其制备方法
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Publication number Priority date Publication date Assignee Title
US8629432B2 (en) 2009-01-16 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8884287B2 (en) 2009-01-16 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8853690B2 (en) 2009-04-16 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor layer

Also Published As

Publication number Publication date
KR101215964B1 (ko) 2012-12-27
US20100148170A1 (en) 2010-06-17
KR20100068196A (ko) 2010-06-22
EP2423966A1 (en) 2012-02-29
EP2197034A2 (en) 2010-06-16
CN101752428A (zh) 2010-06-23
JP5538797B2 (ja) 2014-07-02
EP2197034B1 (en) 2012-09-19
EP2197034A3 (en) 2010-06-30
JP2010161339A (ja) 2010-07-22

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