KR101215964B1 - 전계 효과형 트랜지스터 및 표시장치 - Google Patents

전계 효과형 트랜지스터 및 표시장치 Download PDF

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Publication number
KR101215964B1
KR101215964B1 KR1020090121626A KR20090121626A KR101215964B1 KR 101215964 B1 KR101215964 B1 KR 101215964B1 KR 1020090121626 A KR1020090121626 A KR 1020090121626A KR 20090121626 A KR20090121626 A KR 20090121626A KR 101215964 B1 KR101215964 B1 KR 101215964B1
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South Korea
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semiconductor layer
oxide semiconductor
amorphous oxide
layer
field effect
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KR20100068196A (ko
Inventor
미키 우에다
타쓰야 이와사키
나호 이타가키
아미타 고얄
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Dram (AREA)
KR1020090121626A 2008-12-12 2009-12-09 전계 효과형 트랜지스터 및 표시장치 Expired - Fee Related KR101215964B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2008-317286 2008-12-12
JP2008317286 2008-12-12
JP2009222514A JP5538797B2 (ja) 2008-12-12 2009-09-28 電界効果型トランジスタ及び表示装置
JPJP-P-2009-222514 2009-09-28

Publications (2)

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KR20100068196A KR20100068196A (ko) 2010-06-22
KR101215964B1 true KR101215964B1 (ko) 2012-12-27

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US (1) US20100148170A1 (enExample)
EP (2) EP2423966A1 (enExample)
JP (1) JP5538797B2 (enExample)
KR (1) KR101215964B1 (enExample)
CN (1) CN101752428B (enExample)

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KR102089200B1 (ko) 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102479269B1 (ko) * 2010-01-20 2022-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 휴대 전화기
KR20180020327A (ko) * 2010-03-08 2018-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
JP2013531383A (ja) * 2010-07-02 2013-08-01 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 薄膜トランジスタ
US8593858B2 (en) * 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
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JP5052693B1 (ja) 2011-08-12 2012-10-17 富士フイルム株式会社 薄膜トランジスタ及びその製造方法、表示装置、イメージセンサー、ｘ線センサー並びにｘ線デジタル撮影装置
KR20140056392A (ko) * 2011-09-29 2014-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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KR20130046357A (ko) * 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102646676B (zh) * 2011-11-03 2015-06-10 京东方科技集团股份有限公司 一种tft阵列基板
US9082861B2 (en) * 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
KR101942980B1 (ko) 2012-01-17 2019-01-29 삼성디스플레이 주식회사 반도체 디바이스 및 그 형성 방법
KR20130111874A (ko) * 2012-04-02 2013-10-11 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 표시 장치, 그리고 박막 트랜지스터의 제조 방법
US9553201B2 (en) 2012-04-02 2017-01-24 Samsung Display Co., Ltd. Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor
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KR102227591B1 (ko) * 2012-10-17 2021-03-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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JP6261125B2 (ja) * 2014-01-31 2018-01-17 国立研究開発法人物質・材料研究機構 酸化物薄膜トランジスタおよびその製造方法
TWI772799B (zh) * 2014-05-09 2022-08-01 日商半導體能源研究所股份有限公司 半導體裝置
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Also Published As

Publication number Publication date
US20100148170A1 (en) 2010-06-17
KR20100068196A (ko) 2010-06-22
EP2423966A1 (en) 2012-02-29
EP2197034A2 (en) 2010-06-16
CN101752428A (zh) 2010-06-23
JP5538797B2 (ja) 2014-07-02
CN101752428B (zh) 2011-12-21
EP2197034B1 (en) 2012-09-19
EP2197034A3 (en) 2010-06-30
JP2010161339A (ja) 2010-07-22

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