JP5536388B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP5536388B2 JP5536388B2 JP2009183160A JP2009183160A JP5536388B2 JP 5536388 B2 JP5536388 B2 JP 5536388B2 JP 2009183160 A JP2009183160 A JP 2009183160A JP 2009183160 A JP2009183160 A JP 2009183160A JP 5536388 B2 JP5536388 B2 JP 5536388B2
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Description
請求項2に記載の発明に係る半導体装置は、請求項1に記載の発明において、前記第2の絶縁膜は帯状で直線状であることを特徴とするものである。
請求項3に記載の発明に係る半導体装置は、請求項1に記載の発明において、前記配線の接続パッド部は前記第1の絶縁膜上のみに設けられていることを特徴とするものである。
請求項4に記載の発明に係る半導体装置は、請求項3に記載の発明において、前記配線の接続パッド部上に柱状電極が設けられていることを特徴とするものである。
請求項5に記載の発明に係る半導体装置は、請求項4に記載の発明において、前記柱状電極の周囲に封止膜が設けられていることを特徴とするものである。
請求項6に記載の発明に係る半導体装置は、請求項5に記載の発明において、前記柱状電極上に半田ボールが設けられていることを特徴とするものである。
請求項7に記載の発明に係る半導体装置は、請求項6に記載の発明において、前記封止膜はエポキシ系樹脂からなり、前記第2の絶縁膜は前記封止膜の材料であるエポキシ系樹脂よりも吸水率の小さい樹脂からなることを特徴とするものである。
請求項8に記載の発明に係る半導体装置は、請求項7に記載の発明において、前記第2の絶縁膜はポリイミド系樹脂からなることを特徴とするものである。
請求項9に記載の発明に係る半導体装置の製造方法は、半導体ウエハ上に形成された第1の絶縁膜上に複数の配線を、その接続パッド部がマトリクス状に配置され、且つ、内側に配置された接続パッド部を有する複数の前記配線の引き回し線部が互いに平行とされた状態で少なくとも最外周に配置された相隣接する2本の前記配線の接続パッド部間を通過して延出されるように、形成する工程と、前記複数の配線の引き回し線部が互いに平行とされた部分およびその両側における、相隣接する2つの前記接続パッド部の周辺部を含む前記第1の絶縁膜上の一部に第2の絶縁膜を形成する工程と、少なくとも前記半導体ウエハを切断して半導体装置を複数個得る工程と、を有し、前記複数の配線の引き回し線部が互いに平行とされた部分はそのうちの2本の引き回し線部が互いに平行とされた部分も含むことを特徴とするものである。
請求項10に記載の発明に係る半導体装置の製造方法は、請求項9に記載の発明において、前記第2の絶縁膜は帯状で直線状に形成することを特徴とするものである。
請求項11に記載の発明に係る半導体装置の製造方法は、請求項9に記載の発明において、前記第2の絶縁膜はインクジェット法またはスクリーン印刷法により形成することを特徴とするものである。
請求項12に記載の発明に係る半導体装置の製造方法は、請求項9に記載の発明において、前記配線の接続パッド部は前記第1の絶縁膜上のみに配置することを特徴とするものである。
請求項13に記載の発明に係る半導体装置の製造方法は、請求項12に記載の発明において、前記配線の接続パッド部上に柱状電極を形成する工程を有することを特徴とするものである。
請求項14に記載の発明に係る半導体装置の製造方法は、請求項13に記載の発明において、前記柱状電極の周囲に封止膜を形成する工程を有することを特徴とするものである。
請求項15に記載の発明に係る半導体装置の製造方法は、請求項14に記載の発明において、前記柱状電極上に半田ボールを形成する工程を有することを特徴とするものである。
請求項16に記載の発明に係る半導体装置の製造方法は、請求項14に記載の発明において、前記封止膜はエポキシ系樹脂によって形成し、前記第2の絶縁膜は前記封止膜の材料であるエポキシ系樹脂よりも吸水率の小さい樹脂によって形成することを特徴とするものである。
請求項17に記載の発明に係る半導体装置の製造方法は、請求項16に記載の発明において、前記第2の絶縁膜はポリイミド系樹脂によって形成することを特徴とするものである。
図1はこの発明の第1実施形態としての半導体装置の要部の平面図を示し、図2は図1のII−II線にほぼ沿う部分の断面図を示す。この場合、図1は、図2の封止膜12および半田ボール13を省略した状態の平面図を示す。この半導体装置は、一般的にはCSPと呼ばれるものであり、平面方形状のシリコン基板(半導体基板)1を備えている。シリコン基板1の上面には所定の機能の集積回路を構成する素子、例えば、トランジスタ、ダイオード、抵抗、コンデンサ等の素子(図示せず)が形成され、その上面周辺部には、上記集積回路の各素子に接続されたアルミニウム系金属等からなる複数の接続パッド2が設けられている。
図13はこの発明の第2実施形態としての半導体装置の要部の平面図を示し、図14は図13のXIV−XIV線にほぼ沿う部分の断面図を示す。この場合も、図13は、図14の封止膜12および半田ボール13を省略した状態の平面図を示す。この半導体装置では、第1の保護膜5の上面に銅等からなる渦巻き形状の薄膜誘導素子(下層配線)14が設けられている。
図18はこの発明の第3実施形態としての半導体装置の要部の平面図を示す。この半導体装置では、第1の保護膜5の上面にほぼY字形状の下層配線17が設けられている。下層配線17の全ておよびその近傍における第1の保護膜5の上面には第2の保護膜10が設けられている。下層配線17の3つの端部に対応する部分における第2の保護膜10には開口部(図示せず)が設けられている。
2 接続パッド
3 パッシベーション膜
5 第1の保護膜
7 配線
7a 端部
7b 接続パッド部
7c 引き回し線部
10 第2の保護膜
11c 柱状電極
12 封止膜
13 半田ボール
14 薄膜誘導素子
17 下層配線
Claims (17)
- 半導体基板と、前記半導体基板上に設けられた第1の絶縁膜と、前記第1の絶縁膜上に設けられた複数の配線と、前記配線を含む前記第1の絶縁膜上の一部に設けられた第2の絶縁膜とを備え、複数の前記配線の接続パッド部はマトリクス状に配置され、内側に配置された接続パッド部を有する複数の前記配線の引き回し線部は互いに平行とされた状態で少なくとも最外周に配置された相隣接する2本の前記配線の接続パッド部間を通過して延出され、前記第2の絶縁膜は前記複数の配線の引き回し線部の互いに平行とされた部分およびその両側における、相隣接する2つの前記接続パッド部の周辺部を覆うように設けられ、前記複数の配線の引き回し線部の互いに平行とされた部分はそのうちの2本の引き回し線部の互いに平行とされた部分も含むことを特徴とする半導体装置。
- 請求項1に記載の発明において、前記第2の絶縁膜は帯状で直線状であることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記配線の接続パッド部は前記第1の絶縁膜上のみに設けられていることを特徴とする半導体装置。
- 請求項3に記載の発明において、前記配線の接続パッド部上に柱状電極が設けられていることを特徴とする半導体装置。
- 請求項4に記載の発明において、前記柱状電極の周囲に封止膜が設けられていることを特徴とする半導体装置。
- 請求項5に記載の発明において、前記柱状電極上に半田ボールが設けられていることを特徴とする半導体装置。
- 請求項6に記載の発明において、前記封止膜はエポキシ系樹脂からなり、前記第2の絶縁膜は前記封止膜の材料であるエポキシ系樹脂よりも吸水率の小さい樹脂からなることを特徴とする半導体装置。
- 請求項7に記載の発明において、前記第2の絶縁膜はポリイミド系樹脂からなることを特徴とする半導体装置。
- 半導体ウエハ上に形成された第1の絶縁膜上に複数の配線を、その接続パッド部がマトリクス状に配置され、且つ、内側に配置された接続パッド部を有する複数の前記配線の引き回し線部が互いに平行とされた状態で少なくとも最外周に配置された相隣接する2本の前記配線の接続パッド部間を通過して延出されるように、形成する工程と、
前記複数の配線の引き回し線部の互いに平行とされた部分およびその両側における、相隣接する2つの前記接続パッド部の周辺部を含む前記第1の絶縁膜上の一部に第2の絶縁膜を形成する工程と、
少なくとも前記半導体ウエハを切断して半導体装置を複数個得る工程と、
を有し、
前記複数の配線の引き回し線部の互いに平行とされた部分はそのうちの2本の引き回し線部の互いに平行とされた部分も含むことを特徴とする半導体装置の製造方法。 - 請求項9に記載の発明において、前記第2の絶縁膜は帯状で直線状に形成することを特徴とする半導体装置の製造方法。
- 請求項9に記載の発明において、前記第2の絶縁膜はインクジェット法またはスクリーン印刷法により形成することを特徴とする半導体装置の製造方法。
- 請求項9に記載の発明において、前記配線の接続パッド部は前記第1の絶縁膜上のみに配置することを特徴とする半導体装置の製造方法。
- 請求項12に記載の発明において、前記配線の接続パッド部上に柱状電極を形成する工程を有することを特徴とする半導体装置の製造方法。
- 請求項13に記載の発明において、前記柱状電極の周囲に封止膜を形成する工程を有することを特徴とする半導体装置の製造方法。
- 請求項14に記載の発明において、前記柱状電極上に半田ボールを形成する工程を有することを特徴とする半導体装置の製造方法。
- 請求項14に記載の発明において、前記封止膜はエポキシ系樹脂によって形成し、前記第2の絶縁膜は前記封止膜の材料であるエポキシ系樹脂よりも吸水率の小さい樹脂によって形成することを特徴とする半導体装置の製造方法。
- 請求項16に記載の発明において、前記第2の絶縁膜はポリイミド系樹脂によって形成することを特徴とする半導体装置の製造方法。
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TW099125724A TWI445145B (zh) | 2009-08-06 | 2010-08-03 | 半導體裝置及其製造方法 |
KR1020100075294A KR101159002B1 (ko) | 2009-08-06 | 2010-08-04 | 반도체 장치 및 그 제조방법 |
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