JP5529108B2 - リソグラフィ装置 - Google Patents
リソグラフィ装置 Download PDFInfo
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- JP5529108B2 JP5529108B2 JP2011275446A JP2011275446A JP5529108B2 JP 5529108 B2 JP5529108 B2 JP 5529108B2 JP 2011275446 A JP2011275446 A JP 2011275446A JP 2011275446 A JP2011275446 A JP 2011275446A JP 5529108 B2 JP5529108 B2 JP 5529108B2
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
Description
Claims (9)
- 放射ビームの経路に装着されたビーム修正装置を備えるリソグラフィ装置であって、前記ビーム修正装置が、
流体のフローを通過させるように構成され、使用時に前記放射ビームが導管と導管を流れる流体とを通過するように構成された導管と、
前記放射ビームが前記導管を通過する場所の前記流体フローの方向に関して上流側に位置する前記導管の部分と熱連通する熱交換器と
を備え、
前記ビーム修正装置が、前記リソグラフィ装置の投影システム内の、前記リソグラフィ装置の瞳面の前記放射ビームの方向に関して上流側に位置し、
前記流体フローの方向が、前記放射ビームの光軸に実質的に垂直であり、
前記熱交換器が、複数の導管部分と別々に熱を交換できるように前記熱交換器を制御するように構成された熱交換制御装置をさらに備え、前記導管部分の少なくとも1つが前記流体フローを横切る方向に残りの導管部分の1つから離間している、リソグラフィ装置。 - 前記流体が、その温度の関数として変化する光学特性を有する、請求項1に記載のリソグラフィ装置。
- 前記光学特性が屈折率である、請求項2に記載のリソグラフィ装置。
- 前記ビームの断面の実質的に全体が前記導管を通過する、請求項1乃至請求項3のいずれか1項に記載のリソグラフィ装置。
- 前記導管部の少なくとも1つが、前記流体フローの方向にほぼ垂直な方向に残りの導管部の1つから離間している、請求項1乃至請求項4のいずれか1項に記載のリソグラフィ装置。
- 前記リソグラフィ装置がスキャンモードで動作可能で、前記流体フローの方向が前記リソグラフィ装置のスキャン方向にほぼ平行である、請求項1乃至請求項5のいずれか1項に記載のリソグラフィ装置。
- 前記リソグラフィ装置が、前記導管へ前記流体を提供するように構成された流体提供装置をさらに備え、前記流体提供装置及び導管が、前記導管を通過する流体が実質的に層状になるように構成される、請求項1乃至請求項6のいずれか1項に記載のリソグラフィ装置。
- 前記リソグラフィ装置が液浸リソグラフィ装置である、請求項1乃至請求項7のいずれか1項に記載のリソグラフィ装置。
- 前記リソグラフィ装置の投影システムの瞳面に実質的に位置する放射ビーム操作器をさらに備え、前記放射ビーム操作器が、前記放射ビームの空間周波数分布を操作するように構成される、請求項1乃至請求項8のいずれか1項に記載のリソグラフィ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201061426830P | 2010-12-23 | 2010-12-23 | |
US61/426,830 | 2010-12-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012134494A JP2012134494A (ja) | 2012-07-12 |
JP5529108B2 true JP5529108B2 (ja) | 2014-06-25 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011275446A Active JP5529108B2 (ja) | 2010-12-23 | 2011-12-16 | リソグラフィ装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9146477B2 (ja) |
JP (1) | JP5529108B2 (ja) |
KR (1) | KR101353370B1 (ja) |
CN (1) | CN102540760B (ja) |
NL (1) | NL2007498A (ja) |
TW (1) | TWI514088B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170095358A (ko) | 2014-12-17 | 2017-08-22 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 디바이스 토포그래피 유도 위상을 이용하는 장치 및 방법 |
US20170315441A1 (en) | 2014-12-17 | 2017-11-02 | Asml Netherlands B.V. | Method and apparatus for using patterning device topography induced phase |
WO2016096346A1 (en) | 2014-12-17 | 2016-06-23 | Asml Netherlands B.V. | Method and apparatus for using patterning device topography induced phase |
DE102015225262A1 (de) | 2015-12-15 | 2017-06-22 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
NL2021342A (en) * | 2017-09-04 | 2019-03-11 | Asml Netherlands Bv | Heating system |
US10613444B2 (en) * | 2018-08-28 | 2020-04-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor apparatus and method of operating the same |
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JPH09232213A (ja) | 1996-02-26 | 1997-09-05 | Nikon Corp | 投影露光装置 |
KR970067591A (ko) | 1996-03-04 | 1997-10-13 | 오노 시게오 | 투영노광장치 |
JPH1167651A (ja) | 1997-08-25 | 1999-03-09 | Nikon Corp | 投影露光装置 |
JPH09312256A (ja) | 1996-05-23 | 1997-12-02 | Nikon Corp | 投影露光装置 |
JP3646757B2 (ja) | 1996-08-22 | 2005-05-11 | 株式会社ニコン | 投影露光方法及び装置 |
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-
2011
- 2011-09-29 NL NL2007498A patent/NL2007498A/en not_active Application Discontinuation
- 2011-09-30 US US13/249,423 patent/US9146477B2/en active Active
- 2011-10-12 TW TW100137042A patent/TWI514088B/zh not_active IP Right Cessation
- 2011-10-28 KR KR20110111087A patent/KR101353370B1/ko active IP Right Grant
- 2011-12-16 JP JP2011275446A patent/JP5529108B2/ja active Active
- 2011-12-22 CN CN201110435849.8A patent/CN102540760B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
NL2007498A (en) | 2012-06-27 |
TW201229682A (en) | 2012-07-16 |
US9146477B2 (en) | 2015-09-29 |
JP2012134494A (ja) | 2012-07-12 |
CN102540760B (zh) | 2014-08-06 |
CN102540760A (zh) | 2012-07-04 |
KR20120072316A (ko) | 2012-07-03 |
KR101353370B1 (ko) | 2014-01-20 |
US20120162620A1 (en) | 2012-06-28 |
TWI514088B (zh) | 2015-12-21 |
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