JP5506213B2 - 半導体素子の形成方法 - Google Patents

半導体素子の形成方法 Download PDF

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Publication number
JP5506213B2
JP5506213B2 JP2009053712A JP2009053712A JP5506213B2 JP 5506213 B2 JP5506213 B2 JP 5506213B2 JP 2009053712 A JP2009053712 A JP 2009053712A JP 2009053712 A JP2009053712 A JP 2009053712A JP 5506213 B2 JP5506213 B2 JP 5506213B2
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Japan
Prior art keywords
film
sno
forming
type
insulating film
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JP2009053712A
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English (en)
Japanese (ja)
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JP2010212285A5 (enExample
JP2010212285A (ja
Inventor
久人 薮田
信幸 加地
享 林
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009053712A priority Critical patent/JP5506213B2/ja
Priority to CN201080009985.4A priority patent/CN102341912B/zh
Priority to PCT/JP2010/001383 priority patent/WO2010100885A1/en
Priority to US13/254,429 priority patent/US8389996B2/en
Publication of JP2010212285A publication Critical patent/JP2010212285A/ja
Publication of JP2010212285A5 publication Critical patent/JP2010212285A5/ja
Application granted granted Critical
Publication of JP5506213B2 publication Critical patent/JP5506213B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2009053712A 2009-03-06 2009-03-06 半導体素子の形成方法 Active JP5506213B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009053712A JP5506213B2 (ja) 2009-03-06 2009-03-06 半導体素子の形成方法
CN201080009985.4A CN102341912B (zh) 2009-03-06 2010-03-01 半导体膜的形成方法、半导体器件的形成方法和半导体器件
PCT/JP2010/001383 WO2010100885A1 (en) 2009-03-06 2010-03-01 Method for forming semiconductor film, method for forming semiconductor device and semiconductor device
US13/254,429 US8389996B2 (en) 2009-03-06 2010-03-01 Method for forming semiconductor film, method for forming semiconductor device and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009053712A JP5506213B2 (ja) 2009-03-06 2009-03-06 半導体素子の形成方法

Publications (3)

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JP2010212285A JP2010212285A (ja) 2010-09-24
JP2010212285A5 JP2010212285A5 (enExample) 2012-03-29
JP5506213B2 true JP5506213B2 (ja) 2014-05-28

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ID=42115923

Family Applications (1)

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JP2009053712A Active JP5506213B2 (ja) 2009-03-06 2009-03-06 半導体素子の形成方法

Country Status (4)

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US (1) US8389996B2 (enExample)
JP (1) JP5506213B2 (enExample)
CN (1) CN102341912B (enExample)
WO (1) WO2010100885A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5360587B2 (ja) * 2009-12-04 2013-12-04 独立行政法人科学技術振興機構 ｎ型半導体薄膜、ホモｐｎ接合素子及び薄膜太陽電池並びにｎ型半導体薄膜及びホモｐｎ接合素子の製造方法
JP5735306B2 (ja) * 2011-03-01 2015-06-17 国立大学法人東京工業大学 同時両極性電界効果型トランジスタ及びその製造方法
KR101835005B1 (ko) * 2011-04-08 2018-03-07 삼성전자주식회사 반도체소자 및 그 제조방법
JP6208971B2 (ja) * 2012-09-14 2017-10-04 ルネサスエレクトロニクス株式会社 半導体装置、及び半導体装置の製造方法
CN103681515B (zh) * 2013-12-24 2016-06-22 京东方科技集团股份有限公司 一种互补型薄膜晶体管驱动背板及其制备方法、显示装置
JP6547273B2 (ja) 2013-12-26 2019-07-24 株式会社リコー ｐ型酸化物半導体、ｐ型酸化物半導体製造用組成物、ｐ型酸化物半導体の製造方法、半導体素子、表示素子、画像表示装置、及びシステム
US9985139B2 (en) 2014-11-12 2018-05-29 Qualcomm Incorporated Hydrogenated p-channel metal oxide semiconductor thin film transistors
US9685542B2 (en) 2014-12-30 2017-06-20 Qualcomm Incorporated Atomic layer deposition of P-type oxide semiconductor thin films
US9647135B2 (en) * 2015-01-22 2017-05-09 Snaptrack, Inc. Tin based p-type oxide semiconductor and thin film transistor applications
CN106191774A (zh) * 2015-05-08 2016-12-07 清华大学 锡氧化物靶材及其制备方法
US9680030B1 (en) 2015-12-02 2017-06-13 Advanced Device Research Inc. Enhancement-mode field effect transistor having metal oxide channel layer
TWI566417B (zh) * 2015-12-04 2017-01-11 財團法人工業技術研究院 ｐ型金屬氧化物半導體材料與電晶體
JP6942943B2 (ja) * 2016-07-22 2021-09-29 株式会社リコー 半導体素子の製造方法
KR102676341B1 (ko) * 2016-12-30 2024-06-17 엘지디스플레이 주식회사 박막 트랜지스터, 그의 제조방법, 및 그를 포함한 표시장치
KR102145387B1 (ko) * 2019-01-07 2020-08-18 한양대학교 산학협력단 박막 트랜지스터 및 그 제조방법
JP2024085505A (ja) * 2022-12-15 2024-06-27 東京エレクトロン株式会社 半導体装置の製造方法及び半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL294370A (enExample) 1963-06-20
JPH02271917A (ja) * 1989-04-10 1990-11-06 Sanyo Electric Co Ltd ＳｎＯ↓２膜の形成方法及び光起電力装置の製造方法
JP2002235177A (ja) 2001-02-07 2002-08-23 Star Micronics Co Ltd ＳｎＯ膜及びその作製方法
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
JP4788238B2 (ja) 2005-08-22 2011-10-05 富士電機株式会社 薄膜ガスセンサの製造方法および薄膜ガスセンサ
KR100729043B1 (ko) 2005-09-14 2007-06-14 삼성에스디아이 주식회사 투명 박막 트랜지스터 및 그의 제조방법
JP4946123B2 (ja) * 2006-03-27 2012-06-06 セイコーエプソン株式会社 半導体装置、電気光学装置および電子機器
BRPI0721193B8 (pt) * 2007-02-05 2019-10-29 Univ Nova De Lisboa dispositivo semicondutor eletrônico baseado em óxidos de cobre e níquel e gálio-estanho-zinco-cobre-titânio tipos p e n, e respectivo processo de fabricação
WO2010010802A1 (ja) * 2008-07-24 2010-01-28 独立行政法人科学技術振興機構 ｐチャネル薄膜トランジスタとその製造方法
JP2009053712A (ja) 2008-10-28 2009-03-12 Mitsubishi Chemicals Corp 静電荷像現像用キャリア

Also Published As

Publication number Publication date
US20110309356A1 (en) 2011-12-22
JP2010212285A (ja) 2010-09-24
WO2010100885A1 (en) 2010-09-10
CN102341912A (zh) 2012-02-01
US8389996B2 (en) 2013-03-05
CN102341912B (zh) 2015-12-02

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