BRPI0721193B8 - dispositivo semicondutor eletrônico baseado em óxidos de cobre e níquel e gálio-estanho-zinco-cobre-titânio tipos p e n, e respectivo processo de fabricação - Google Patents

dispositivo semicondutor eletrônico baseado em óxidos de cobre e níquel e gálio-estanho-zinco-cobre-titânio tipos p e n, e respectivo processo de fabricação Download PDF

Info

Publication number
BRPI0721193B8
BRPI0721193B8 BRPI0721193A BRPI0721193A BRPI0721193B8 BR PI0721193 B8 BRPI0721193 B8 BR PI0721193B8 BR PI0721193 A BRPI0721193 A BR PI0721193A BR PI0721193 A BRPI0721193 A BR PI0721193A BR PI0721193 B8 BRPI0721193 B8 BR PI0721193B8
Authority
BR
Brazil
Prior art keywords
copper
tin
zinc
manufacturing process
gallium
Prior art date
Application number
BRPI0721193A
Other languages
English (en)
Inventor
Maria Correia Fortunato Elvira
Ferrão De Paiva Martins Rodrigo
Original Assignee
Univ Nova De Lisboa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nova De Lisboa filed Critical Univ Nova De Lisboa
Publication of BRPI0721193A2 publication Critical patent/BRPI0721193A2/pt
Publication of BRPI0721193B1 publication Critical patent/BRPI0721193B1/pt
Publication of BRPI0721193B8 publication Critical patent/BRPI0721193B8/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8254—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using II-VI technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

dispositivo semicondutor eletrônico baseado em óxidos de cobre e níquel e gálio-estanho-zinco-cobre-titânio tipos p e n, e respectivo processo de fabricação a presente invenção relaciona- se ao uso de semicondutores de óxidos tipos p e n de cobre e níquel (ocuxniy com 0 < x < 3; 0 < y < 3) ou óxido multicomponente de gálio-estanho-zinco-cobre-ti, designado aqui após por gszcto, em diferentes composições molares, possuindo uma estrutura amorfa ou cristalina e com características elétricas de um semicondutor doador ou receptor de elétrons, dopado ou não dopado com impurezas, tais como, zircônio ou níquel ou nitrogênio, como forma de controlar o comportamento eletrônico do semicondutor (valência); incluindo o processo de fabricação à temperatura ambiente ou temperaturas inferiores a 100ºc e suas aplicações nos campos da optoeletrônica e eletrônica para produção de dispositivos, tais como, complementar-metal-óxidosemicondutor, transistores de filmes finos, heterojunções pn, portas lógicas, osciladores em anel, usando-se substratos de vidro, metálicos, poliméricos ou de material celulósico, nos quais uma camada de proteção à base de fluoreto de magnésio é usada, junto com uma camada de adaptação de óxido de tântalo dos semicondutores ativos ao dielétrico, tal como o dióxido de silício.
BRPI0721193A 2007-02-05 2007-02-05 dispositivo semicondutor eletrônico baseado em óxidos de cobre e níquel e gálio-estanho-zinco-cobre-titânio tipos p e n, e respectivo processo de fabricação BRPI0721193B8 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/PT2007/000008 WO2008097117A1 (en) 2007-02-05 2007-02-05 ELECTRONIC SEMICONDUCTOR DEVICE BASED ON COPPER NICKEL AND GALLIUM-TIN-ZINC-COPPER-TITANIUM p AND n-TYPE OXIDES, THEIR APPLICATIONS AND CORRESPONDING MANUFACTURE PROCESS

Publications (3)

Publication Number Publication Date
BRPI0721193A2 BRPI0721193A2 (pt) 2016-06-21
BRPI0721193B1 BRPI0721193B1 (pt) 2019-08-27
BRPI0721193B8 true BRPI0721193B8 (pt) 2019-10-29

Family

ID=38647954

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0721193A BRPI0721193B8 (pt) 2007-02-05 2007-02-05 dispositivo semicondutor eletrônico baseado em óxidos de cobre e níquel e gálio-estanho-zinco-cobre-titânio tipos p e n, e respectivo processo de fabricação

Country Status (7)

Country Link
US (1) US8274082B2 (pt)
EP (1) EP2115770B1 (pt)
JP (1) JP2010518619A (pt)
BR (1) BRPI0721193B8 (pt)
CA (1) CA2677312C (pt)
PT (1) PT2115770T (pt)
WO (1) WO2008097117A1 (pt)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE505087C2 (sv) * 1995-10-09 1997-06-23 Tetra Laval Holdings & Finance Förpackningslaminat och sätt att framställa förpackningslaminatet samt av förpackningslaminatet framställda förpackningsbehållare med goda syrgastäthetsegenskaper
US8384439B2 (en) * 2008-11-28 2013-02-26 Samsung Electronics Co., Ltd. Semiconductor devices and methods of fabricating the same
JP5506213B2 (ja) 2009-03-06 2014-05-28 キヤノン株式会社 半導体素子の形成方法
CN102804360B (zh) * 2009-12-25 2014-12-17 株式会社半导体能源研究所 半导体装置
JP5776192B2 (ja) * 2010-02-16 2015-09-09 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置及びシステム
KR20130008037A (ko) * 2010-03-05 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하는 방법
KR101420289B1 (ko) * 2010-04-15 2014-07-17 패컬티 오브 사이언스 앤드 테크놀로지 유니버시티 오브 뉴 리스본 반도체 소자 및 그 제조 방법
US9053937B2 (en) 2010-04-15 2015-06-09 Electronics And Telecommunications Research Institute Semiconductor device and method of manufacturing the same
US8692243B2 (en) * 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8728860B2 (en) * 2010-09-03 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013125826A (ja) * 2011-12-14 2013-06-24 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
US8969867B2 (en) * 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101284587B1 (ko) * 2012-05-17 2013-07-11 한국과학기술연구원 Ｐ-형 투명 산화물 반도체, 이를 포함하는 트랜지스터 및 그 제조방법
TWI495615B (zh) 2012-09-28 2015-08-11 Ind Tech Res Inst ｐ型金屬氧化物半導體材料
KR102045730B1 (ko) * 2012-12-28 2019-12-03 엘지디스플레이 주식회사 인버터와 이를 이용한 구동회로 및 표시장치
US9589852B2 (en) * 2013-07-22 2017-03-07 Cree, Inc. Electrostatic phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating
JP6910299B2 (ja) * 2015-01-14 2021-07-28 コーニング インコーポレイテッド ガラス基板およびそれを備えたディスプレイ装置
EP3268507B1 (en) * 2015-03-11 2019-01-09 Essilor International Vacuum deposition method
CO2017007378A1 (es) * 2017-07-25 2019-01-31 Univ Nat Colombia Peliculas delgadas de oxinitruro binario de niquel-cobre (nicuoxny) y las condiciones para su fabricación
CN114235903A (zh) * 2020-09-09 2022-03-25 中国科学院苏州纳米技术与纳米仿生研究所 一种气体传感器及其制作方法
CN113097231B (zh) * 2021-03-30 2023-06-02 电子科技大学 一种基于锡氧化物的pn结及其制备方法
CN113549453B (zh) * 2021-07-20 2023-05-12 陕西师范大学 一种具有高光电性能的CuO基复合材料

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101057339B (zh) * 2004-11-10 2012-12-26 佳能株式会社 无定形氧化物和场效应晶体管
JP5138163B2 (ja) * 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
US7695998B2 (en) * 2005-07-02 2010-04-13 Hewlett-Packard Development Company, L.P. Methods for making and using high-mobility inorganic semiconductive films

Also Published As

Publication number Publication date
EP2115770B1 (en) 2018-10-10
BRPI0721193A2 (pt) 2016-06-21
CA2677312C (en) 2015-08-04
US8274082B2 (en) 2012-09-25
AU2007346358A1 (en) 2008-08-14
US20100090216A1 (en) 2010-04-15
EP2115770A1 (en) 2009-11-11
PT2115770T (pt) 2019-02-15
WO2008097117A1 (en) 2008-08-14
JP2010518619A (ja) 2010-05-27
CA2677312A1 (en) 2008-08-14
BRPI0721193B1 (pt) 2019-08-27

Similar Documents

Publication Publication Date Title
BRPI0721193B8 (pt) dispositivo semicondutor eletrônico baseado em óxidos de cobre e níquel e gálio-estanho-zinco-cobre-titânio tipos p e n, e respectivo processo de fabricação
Liu et al. Solution combustion synthesis: low‐temperature processing for p‐type Cu: NiO thin films for transparent electronics
Zhu et al. Nontoxic, eco‐friendly fully water‐induced ternary Zr–Gd–O dielectric for high‐performance transistors and unipolar inverters
Zhang et al. Review of flexible and transparent thin-film transistors based on zinc oxide and related materials
Lee et al. Skin‐like oxide thin‐film transistors for transparent displays
Hasan et al. Bending stress induced performance change in plastic oxide thin-film transistor and recovery by annealing at 300° C
EP2162920B1 (en) Inverter manufacturing method and inverter
US8981370B2 (en) Semiconductor device
JP6082640B2 (ja) 積層膜の処理方法および半導体装置の作製方法
Petti et al. Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits
Chen et al. Integrating poly-silicon and InGaZnO thin-film transistors for CMOS inverters
Liu et al. Polyol reduction: a low-temperature eco-friendly solution process for p-channel copper oxide-based transistors and inverter circuits
Yang et al. Electrical stability of multilayer MoS2 field‐effect transistor under negative bias stress at various temperatures
Xifeng et al. Low-temperature solution-processed zirconium oxide gate insulators for thin-film transistors
Su et al. A nonvolatile InGaZnO charge-trapping-engineered flash memory with good retention characteristics
Mude et al. High performance of solution-processed amorphous p-channel copper-tin-sulfur-gallium oxide thin-film transistors by UV/O3 photocuring
KR20130123315A (ko) 온도 센서 회로, 및 온도 센서 회로를 사용한 반도체 장치
JP6423478B2 (ja) 半導体装置
Zheng et al. Real-time polarization switch characterization of HfZrO 4 for negative capacitance field-effect transistor applications
Wang et al. Gallium-doped zinc oxide nanostructures for tunable transparent thermoelectric films
JP6017016B2 (ja) 透明化合物半導体及びその製造方法
Yuvaraja et al. Wide bandgap semiconductor-based integrated circuits
Zhang et al. High performance amorphous IGZO thin-film transistor based on alumina ceramic
Hwang et al. Effect of aluminum and gallium doping on the performance of solution-processed indium oxide thin-film transistors
Kim et al. Highly Scalable and Robust Mesa‐Island‐Structure Metal‐Oxide Thin‐Film Transistors and Integrated Circuits Enabled by Stress‐Diffusive Manipulation

Legal Events

Date Code Title Description
B06T Formal requirements before examination [chapter 6.20 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 27/08/2019, OBSERVADAS AS CONDICOES LEGAIS. (CO) 10 (DEZ) ANOS CONTADOS A PARTIR DE 27/08/2019, OBSERVADAS AS CONDICOES LEGAIS

B16C Correction of notification of the grant [chapter 16.3 patent gazette]

Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 27/08/2019, OBSERVADAS AS CONDICOES LEGAIS. (CO) REFERENTE A PUBLICACAO NA RPI 2538 DE 27/08/2019, QUANTO AO TITULO.

B21F Lapse acc. art. 78, item iv - on non-payment of the annual fees in time

Free format text: REFERENTE A 15A ANUIDADE.

B24J Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12)

Free format text: EM VIRTUDE DA EXTINCAO PUBLICADA NA RPI 2656 DE 30-11-2021 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDA A EXTINCAO DA PATENTE E SEUS CERTIFICADOS, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.