PT2115770T - Dispositivo semicondutor eletrónico com base em óxido de cobre e níquel e óxido de gálio-estanho-zinco-cobre-titânio do tipo p e do tipo n, suas aplicações e processo de fabrico correspondente - Google Patents

Dispositivo semicondutor eletrónico com base em óxido de cobre e níquel e óxido de gálio-estanho-zinco-cobre-titânio do tipo p e do tipo n, suas aplicações e processo de fabrico correspondente

Info

Publication number
PT2115770T
PT2115770T PT07709270T PT07709270T PT2115770T PT 2115770 T PT2115770 T PT 2115770T PT 07709270 T PT07709270 T PT 07709270T PT 07709270 T PT07709270 T PT 07709270T PT 2115770 T PT2115770 T PT 2115770T
Authority
PT
Portugal
Prior art keywords
copper
gallium
tin
zinc
titanium
Prior art date
Application number
PT07709270T
Other languages
English (en)
Inventor
Ferrão De Paiva Martins Rodrigo
Maria Correia Fortunato Elvira
Original Assignee
Univ Nova De Lisboa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nova De Lisboa filed Critical Univ Nova De Lisboa
Publication of PT2115770T publication Critical patent/PT2115770T/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8254—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using II-VI technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
PT07709270T 2007-02-05 2007-02-05 Dispositivo semicondutor eletrónico com base em óxido de cobre e níquel e óxido de gálio-estanho-zinco-cobre-titânio do tipo p e do tipo n, suas aplicações e processo de fabrico correspondente PT2115770T (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07709270.8A EP2115770B1 (en) 2007-02-05 2007-02-05 ELECTRONIC SEMICONDUCTOR DEVICE BASED ON COPPER NICKEL AND GALLIUM-TIN-ZINC-COPPER-TITANIUM p AND n-TYPE OXIDES, THEIR APPLICATIONS AND CORRESPONDING MANUFACTURE PROCESS
PCT/PT2007/000008 WO2008097117A1 (en) 2007-02-05 2007-02-05 ELECTRONIC SEMICONDUCTOR DEVICE BASED ON COPPER NICKEL AND GALLIUM-TIN-ZINC-COPPER-TITANIUM p AND n-TYPE OXIDES, THEIR APPLICATIONS AND CORRESPONDING MANUFACTURE PROCESS

Publications (1)

Publication Number Publication Date
PT2115770T true PT2115770T (pt) 2019-02-15

Family

ID=38647954

Family Applications (1)

Application Number Title Priority Date Filing Date
PT07709270T PT2115770T (pt) 2007-02-05 2007-02-05 Dispositivo semicondutor eletrónico com base em óxido de cobre e níquel e óxido de gálio-estanho-zinco-cobre-titânio do tipo p e do tipo n, suas aplicações e processo de fabrico correspondente

Country Status (7)

Country Link
US (1) US8274082B2 (pt)
EP (1) EP2115770B1 (pt)
JP (1) JP2010518619A (pt)
BR (1) BRPI0721193B8 (pt)
CA (1) CA2677312C (pt)
PT (1) PT2115770T (pt)
WO (1) WO2008097117A1 (pt)

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SE505087C2 (sv) * 1995-10-09 1997-06-23 Tetra Laval Holdings & Finance Förpackningslaminat och sätt att framställa förpackningslaminatet samt av förpackningslaminatet framställda förpackningsbehållare med goda syrgastäthetsegenskaper
US8384439B2 (en) * 2008-11-28 2013-02-26 Samsung Electronics Co., Ltd. Semiconductor devices and methods of fabricating the same
JP5506213B2 (ja) * 2009-03-06 2014-05-28 キヤノン株式会社 半導体素子の形成方法
CN103985760B (zh) 2009-12-25 2017-07-18 株式会社半导体能源研究所 半导体装置
JP5776192B2 (ja) * 2010-02-16 2015-09-09 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置及びシステム
WO2011108382A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101420289B1 (ko) * 2010-04-15 2014-07-17 패컬티 오브 사이언스 앤드 테크놀로지 유니버시티 오브 뉴 리스본 반도체 소자 및 그 제조 방법
US9053937B2 (en) 2010-04-15 2015-06-09 Electronics And Telecommunications Research Institute Semiconductor device and method of manufacturing the same
US8692243B2 (en) * 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012029596A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013125826A (ja) * 2011-12-14 2013-06-24 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
US8969867B2 (en) * 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101284587B1 (ko) * 2012-05-17 2013-07-11 한국과학기술연구원 Ｐ-형 투명 산화물 반도체, 이를 포함하는 트랜지스터 및 그 제조방법
CN103715234B (zh) 2012-09-28 2016-05-04 财团法人工业技术研究院 p型金属氧化物半导体材料
KR102045730B1 (ko) * 2012-12-28 2019-12-03 엘지디스플레이 주식회사 인버터와 이를 이용한 구동회로 및 표시장치
US9589852B2 (en) * 2013-07-22 2017-03-07 Cree, Inc. Electrostatic phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating
KR102412623B1 (ko) * 2015-01-14 2022-06-23 코닝 인코포레이티드 유리 기판 및 이를 포함하는 디스플레이 장치
BR112017019127A2 (pt) * 2015-03-11 2018-05-02 Essilor Int evaporador térmico
CO2017007378A1 (es) * 2017-07-25 2019-01-31 Univ Nat Colombia Peliculas delgadas de oxinitruro binario de niquel-cobre (nicuoxny) y las condiciones para su fabricación
CN114235903A (zh) * 2020-09-09 2022-03-25 中国科学院苏州纳米技术与纳米仿生研究所 一种气体传感器及其制作方法
CN113097231B (zh) * 2021-03-30 2023-06-02 电子科技大学 一种基于锡氧化物的pn结及其制备方法
CN113549453B (zh) * 2021-07-20 2023-05-12 陕西师范大学 一种具有高光电性能的CuO基复合材料

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Publication number Priority date Publication date Assignee Title
KR100998527B1 (ko) * 2004-11-10 2010-12-07 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 비정질 산화물 및 전계 효과 트랜지스터
JP5138163B2 (ja) * 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
US7695998B2 (en) * 2005-07-02 2010-04-13 Hewlett-Packard Development Company, L.P. Methods for making and using high-mobility inorganic semiconductive films

Also Published As

Publication number Publication date
AU2007346358A1 (en) 2008-08-14
EP2115770B1 (en) 2018-10-10
US8274082B2 (en) 2012-09-25
BRPI0721193B1 (pt) 2019-08-27
JP2010518619A (ja) 2010-05-27
US20100090216A1 (en) 2010-04-15
BRPI0721193B8 (pt) 2019-10-29
EP2115770A1 (en) 2009-11-11
CA2677312C (en) 2015-08-04
BRPI0721193A2 (pt) 2016-06-21
WO2008097117A1 (en) 2008-08-14
CA2677312A1 (en) 2008-08-14

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