JP5494360B2 - 多結晶シリコン塊の洗浄装置 - Google Patents
多結晶シリコン塊の洗浄装置 Download PDFInfo
- Publication number
- JP5494360B2 JP5494360B2 JP2010191279A JP2010191279A JP5494360B2 JP 5494360 B2 JP5494360 B2 JP 5494360B2 JP 2010191279 A JP2010191279 A JP 2010191279A JP 2010191279 A JP2010191279 A JP 2010191279A JP 5494360 B2 JP5494360 B2 JP 5494360B2
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- JP
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- Prior art keywords
- cleaning
- washing
- polycrystalline silicon
- basket
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004140 cleaning Methods 0.000 title claims description 140
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 74
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 90
- 238000005406 washing Methods 0.000 claims description 66
- 238000005520 cutting process Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 39
- 239000012535 impurity Substances 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 29
- 239000010703 silicon Substances 0.000 description 29
- 239000000843 powder Substances 0.000 description 26
- -1 small pieces Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 17
- 238000005554 pickling Methods 0.000 description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 10
- 239000011863 silicon-based powder Substances 0.000 description 10
- 239000002253 acid Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009191 jumping Effects 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000009189 diving Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/06—Cleaning involving contact with liquid using perforated drums in which the article or material is placed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/045—Cleaning involving contact with liquid using perforated containers, e.g. baskets, or racks immersed and agitated in a liquid bath
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
この洗浄かご12を収容する内かご16は、樹脂板により箱状に形成されている。この内かご16の底面16bは、図3に示すように、その樹脂板に、洗浄かご12の貫通孔12aより大きい、たとえば直径20mmの貫通孔に網(たとえばメッシュサイズ2mm〜3mm)を取り付けることにより、貫通孔12aよりも目の小さい開口として形成された複数の開口部16aが設けられている。また、内かご16の側面は、その樹脂板に直径8mmの貫通孔16cが設けられている。なお、この内かご16は、たとえば図2Aに示すように、上端に形成されたハンドル16dを洗浄槽本体14の上部に載せることにより、洗浄槽本体14内部に吊り下げた状態で保持される。ハンドル16dは、洗浄水Wの流出を妨げない形状で一カ所または複数箇所に形成されている。
12 洗浄かご
12a 貫通孔
12b フランジ
14 洗浄槽本体
14a 底面
14b 給水口
14c 邪魔板
15 オーバーフロー部
15a 排水口
16 内かご
16a 開口部
16b 底面
16c 貫通孔
16d ハンドル
20 多結晶シリコンロッド
22 多結晶シリコン塊
30 揺動装置
31 蓋
31a 通水孔
32 保持ハンド
33 ウレタン板
40,41 コンベア
42 駆動装置
G 隙間
W 洗浄水
Claims (3)
- 多結晶シリコンロッドを切断または破砕することにより細分化して得られた多結晶シリコン塊の洗浄装置であって、
複数の貫通孔が設けられ、前記多結晶シリコン塊を収容する搬送可能な洗浄かごと、
前記洗浄かごを収容し、底面に設けられた給水口から連続的に洗浄水が供給される洗浄槽本体と、
前記洗浄槽本体内に備えられて前記洗浄かごを収容し、前記洗浄かごの前記貫通孔よりも目が小さい複数の開口部を底面に有する内かごと、
前記洗浄かごを保持し、この洗浄かごを前記内かご内で揺動させる揺動装置とを備え、
前記洗浄槽本体に、この洗浄槽本体の上部から溢水する前記洗浄水を回収するオーバーフロー部が設けられており、
前記揺動装置は、前記洗浄水を流通させる通水孔を有し前記洗浄かごの上部開口部を覆う蓋を備えることを特徴とする多結晶シリコン塊の洗浄装置。 - 前記蓋と前記洗浄かごの上端部との間に、前記洗浄水を流通させる隙間が設けられていることを特徴とする請求項1に記載の多結晶シリコン塊の洗浄装置。
- 前記洗浄槽本体の前記底面が傾斜するように設けられているとともに、この底面の最下部に前記給水口が設けられていることを特徴とする請求項1又は2に記載の多結晶シリコン塊の洗浄装置。
Priority Applications (1)
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JP2010191279A JP5494360B2 (ja) | 2009-08-31 | 2010-08-27 | 多結晶シリコン塊の洗浄装置 |
Applications Claiming Priority (3)
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JP2009199449 | 2009-08-31 | ||
JP2009199449 | 2009-08-31 | ||
JP2010191279A JP5494360B2 (ja) | 2009-08-31 | 2010-08-27 | 多結晶シリコン塊の洗浄装置 |
Related Child Applications (1)
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JP2013255706A Division JP5716816B2 (ja) | 2009-08-31 | 2013-12-11 | 多結晶シリコン塊の洗浄方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011068554A JP2011068554A (ja) | 2011-04-07 |
JP5494360B2 true JP5494360B2 (ja) | 2014-05-14 |
Family
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Family Applications (2)
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JP2010191279A Active JP5494360B2 (ja) | 2009-08-31 | 2010-08-27 | 多結晶シリコン塊の洗浄装置 |
JP2013255706A Active JP5716816B2 (ja) | 2009-08-31 | 2013-12-11 | 多結晶シリコン塊の洗浄方法 |
Family Applications After (1)
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JP2013255706A Active JP5716816B2 (ja) | 2009-08-31 | 2013-12-11 | 多結晶シリコン塊の洗浄方法 |
Country Status (2)
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US (2) | US8887744B2 (ja) |
JP (2) | JP5494360B2 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102764742A (zh) * | 2011-05-03 | 2012-11-07 | 镇江仁德新能源科技有限公司 | 碎硅片漂洗设备 |
JP6217140B2 (ja) * | 2013-05-29 | 2017-10-25 | 三菱マテリアル株式会社 | 多結晶シリコン材料の製造方法 |
JP2015202999A (ja) * | 2014-04-16 | 2015-11-16 | 信越化学工業株式会社 | シリコン結晶の洗浄方法および多結晶シリコン塊の粉砕方法。 |
CN104839866B (zh) * | 2015-05-06 | 2016-09-21 | 绍兴文理学院 | 一种香榧振动筛分清洗机 |
CN105537190A (zh) * | 2015-12-10 | 2016-05-04 | 重庆润际远东新材料科技有限公司 | 一种用于硅粉生产的水循环及氮气充入式破碎系统 |
CN106012006A (zh) * | 2016-07-14 | 2016-10-12 | 晶科能源有限公司 | 一种用于放置多晶硅料的放置筒和多晶硅料清洗装置 |
JP6928262B2 (ja) * | 2016-12-14 | 2021-09-01 | 三菱マテリアル株式会社 | シリコン破砕片の表面清浄化方法 |
CN108746041B (zh) * | 2018-06-11 | 2020-09-22 | 安徽蒯科砾工业加热技术有限公司 | 一种机械设备保养用节能型清洗烘干装置 |
CN109909227A (zh) * | 2019-03-28 | 2019-06-21 | 安徽环泰新材料科技有限公司 | 一种玻璃微珠生产用清洗设备 |
JP7458833B2 (ja) * | 2020-03-12 | 2024-04-01 | グローバルウェーハズ・ジャパン株式会社 | シリコン原料の洗浄装置 |
CN112692307B (zh) * | 2020-12-02 | 2021-10-08 | 深圳市金石三维打印科技有限公司 | 一种钛及钛合金3d打印产品清洗装置 |
CN112808639B (zh) * | 2020-12-30 | 2022-08-09 | 湖南三安半导体有限责任公司 | 一种清洗装置 |
CN112974375B (zh) * | 2021-02-20 | 2023-09-05 | 南京吉才汇科技有限公司 | 一种冲刷式枯叶清洗装置 |
CN117337268A (zh) | 2021-08-06 | 2024-01-02 | 株式会社德山 | 清洗笼 |
CN113649344A (zh) * | 2021-08-16 | 2021-11-16 | 江苏美科太阳能科技有限公司 | 一种单晶硅料漂洗装置及漂洗方法 |
CN116329158A (zh) * | 2023-02-23 | 2023-06-27 | 广州市晶邦密封技术有限公司 | 一种聚四氟乙烯密封件表面清洁装置 |
Family Cites Families (16)
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US4732291A (en) * | 1986-11-26 | 1988-03-22 | Mcconnell Thomas E | Baby bottle nipple, collar, cap ring and pacifier dishwasher enclosure |
US4911190A (en) * | 1988-05-18 | 1990-03-27 | Sheldon Morris W | Article cleaning machine for removing surface contaminants from the article |
JPH0448629A (ja) * | 1990-06-14 | 1992-02-18 | Fujitsu Ltd | 半導体ウェーハの液処理装置 |
US5327921A (en) * | 1992-03-05 | 1994-07-12 | Tokyo Electron Limited | Processing vessel for a wafer washing system |
JPH07126878A (ja) * | 1993-11-09 | 1995-05-16 | Mitsubishi Heavy Ind Ltd | 洗浄籠操作装置 |
JPH07171528A (ja) * | 1993-12-22 | 1995-07-11 | Sonitsuku Fueroo Kk | 洗浄装置 |
TW324029B (en) * | 1994-01-11 | 1998-01-01 | Mitsubishi Chem Corp | De-oiling cleaner composition |
US5853211A (en) * | 1997-01-10 | 1998-12-29 | Btm Corporation | Universal gripper |
JP3584718B2 (ja) * | 1998-01-14 | 2004-11-04 | 信越半導体株式会社 | 多結晶体自動洗浄装置 |
JP2000021830A (ja) * | 1998-07-07 | 2000-01-21 | Memc Kk | シリコンウエハの洗浄装置 |
JP2000302594A (ja) * | 1999-02-18 | 2000-10-31 | Mitsubishi Materials Polycrystalline Silicon Corp | 多結晶シリコンの洗浄方法 |
JP2001000927A (ja) * | 1999-06-24 | 2001-01-09 | Sharp Corp | 処理液を用いる処理装置 |
DE10161086B4 (de) * | 2001-12-12 | 2005-06-02 | Wmv Apparatebau Gmbh & Co Kg | Anlage zum Behandeln von Massenteilen |
JP4386263B2 (ja) * | 2004-02-12 | 2009-12-16 | キヤノン株式会社 | 物品の処理装置及び処理方法 |
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JP2006181555A (ja) * | 2004-12-28 | 2006-07-13 | Mitsubishi Materials Polycrystalline Silicon Corp | 多結晶シリコンの洗浄方法と洗浄装置 |
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2010
- 2010-08-27 JP JP2010191279A patent/JP5494360B2/ja active Active
- 2010-08-30 US US12/923,034 patent/US8887744B2/en active Active
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2013
- 2013-12-11 JP JP2013255706A patent/JP5716816B2/ja active Active
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2014
- 2014-10-08 US US14/509,520 patent/US9421583B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2011068554A (ja) | 2011-04-07 |
US9421583B2 (en) | 2016-08-23 |
JP5716816B2 (ja) | 2015-05-13 |
US20150053236A1 (en) | 2015-02-26 |
JP2014111532A (ja) | 2014-06-19 |
US20110048455A1 (en) | 2011-03-03 |
US8887744B2 (en) | 2014-11-18 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |