JP5484372B2 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

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Publication number
JP5484372B2
JP5484372B2 JP2011028184A JP2011028184A JP5484372B2 JP 5484372 B2 JP5484372 B2 JP 5484372B2 JP 2011028184 A JP2011028184 A JP 2011028184A JP 2011028184 A JP2011028184 A JP 2011028184A JP 5484372 B2 JP5484372 B2 JP 5484372B2
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JP
Japan
Prior art keywords
diodes
diode
semiconductor module
switching elements
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011028184A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012169397A (ja
JP2012169397A5 (enExample
Inventor
正博 加藤
信也 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2011028184A priority Critical patent/JP5484372B2/ja
Priority to US13/298,711 priority patent/US8643026B2/en
Priority to CN201310265179.9A priority patent/CN103325759B/zh
Priority to CN201110453505XA priority patent/CN102637679A/zh
Publication of JP2012169397A publication Critical patent/JP2012169397A/ja
Publication of JP2012169397A5 publication Critical patent/JP2012169397A5/ja
Application granted granted Critical
Publication of JP5484372B2 publication Critical patent/JP5484372B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
    • H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
    • H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H10W70/427—Bent parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/442—Shapes or dispositions of multiple leadframes in a single chip
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H02M1/4208—Arrangements for improving power factor of AC input
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)
JP2011028184A 2011-02-14 2011-02-14 半導体モジュール Active JP5484372B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011028184A JP5484372B2 (ja) 2011-02-14 2011-02-14 半導体モジュール
US13/298,711 US8643026B2 (en) 2011-02-14 2011-11-17 Semiconductor module
CN201310265179.9A CN103325759B (zh) 2011-02-14 2011-12-30 半导体模块
CN201110453505XA CN102637679A (zh) 2011-02-14 2011-12-30 半导体模块

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011028184A JP5484372B2 (ja) 2011-02-14 2011-02-14 半導体モジュール

Publications (3)

Publication Number Publication Date
JP2012169397A JP2012169397A (ja) 2012-09-06
JP2012169397A5 JP2012169397A5 (enExample) 2013-08-01
JP5484372B2 true JP5484372B2 (ja) 2014-05-07

Family

ID=46622021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011028184A Active JP5484372B2 (ja) 2011-02-14 2011-02-14 半導体モジュール

Country Status (3)

Country Link
US (1) US8643026B2 (enExample)
JP (1) JP5484372B2 (enExample)
CN (2) CN103325759B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5875402B2 (ja) * 2012-02-17 2016-03-02 三菱電機株式会社 パワーモジュール及び空調装置
JP2014086536A (ja) * 2012-10-23 2014-05-12 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
JP6094420B2 (ja) * 2013-08-09 2017-03-15 三菱電機株式会社 半導体装置
CN106165280B (zh) * 2014-04-08 2018-12-14 三菱电机株式会社 模压模块
US9716072B2 (en) * 2014-05-12 2017-07-25 Mitsubishi Electric Corporation Power semiconductor device and method of manufacturing the same
JP6537246B2 (ja) * 2014-10-16 2019-07-03 京セラ株式会社 パワーモジュール及びパワーユニット
CN109891559B (zh) 2017-09-05 2023-04-07 株式会社爱发科 半导体装置的制造方法
JP7109347B2 (ja) * 2018-12-03 2022-07-29 三菱電機株式会社 半導体装置および電力変換装置
EP4614557A1 (en) * 2022-11-17 2025-09-10 Hisense Home Appliances Group Co., Ltd. Power module and device
CN119110997A (zh) * 2022-11-17 2024-12-10 海信家电集团股份有限公司 功率模块和设备

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9502249D0 (sv) 1995-06-21 1995-06-21 Abb Research Ltd Converter circuitry having at least one switching device and circuit module
JP3201277B2 (ja) 1996-09-11 2001-08-20 株式会社日立製作所 半導体装置
JPH11233712A (ja) 1998-02-12 1999-08-27 Hitachi Ltd 半導体装置及びその製法とそれを使った電気機器
JP4073559B2 (ja) * 1998-10-30 2008-04-09 三菱電機株式会社 半導体装置
JP4450530B2 (ja) 2001-07-03 2010-04-14 三菱電機株式会社 インバータモジュール
JP3676737B2 (ja) * 2002-01-23 2005-07-27 三菱電機株式会社 モータ駆動装置及び送風機及び圧縮機及び冷凍空調装置
JP4262453B2 (ja) * 2002-07-15 2009-05-13 三菱電機株式会社 電力半導体装置
JP4222193B2 (ja) * 2003-11-26 2009-02-12 トヨタ自動車株式会社 半導体装置
US7355368B2 (en) * 2004-08-12 2008-04-08 International Rectifier Corporation Efficient in-rush current limiting circuit with dual gated bidirectional hemts
JP2008060430A (ja) * 2006-08-31 2008-03-13 Daikin Ind Ltd 電力変換装置
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
JP5206102B2 (ja) * 2008-05-08 2013-06-12 トヨタ自動車株式会社 半導体装置
KR101740684B1 (ko) * 2009-10-30 2017-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 다이오드, 정류기 및 그것을 가지는 반도체 장치

Also Published As

Publication number Publication date
CN102637679A (zh) 2012-08-15
CN103325759B (zh) 2016-04-13
US8643026B2 (en) 2014-02-04
US20120206196A1 (en) 2012-08-16
JP2012169397A (ja) 2012-09-06
CN103325759A (zh) 2013-09-25

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