JP2012169397A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP2012169397A JP2012169397A JP2011028184A JP2011028184A JP2012169397A JP 2012169397 A JP2012169397 A JP 2012169397A JP 2011028184 A JP2011028184 A JP 2011028184A JP 2011028184 A JP2011028184 A JP 2011028184A JP 2012169397 A JP2012169397 A JP 2012169397A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000011084 recovery Methods 0.000 abstract description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 19
- 229910010271 silicon carbide Inorganic materials 0.000 description 18
- 238000010586 diagram Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49537—Plurality of lead frames mounted in one device
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
- H02M1/4208—Arrangements for improving power factor of AC input
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Rectifiers (AREA)
Abstract
【解決手段】PFCモジュールは、上アームの第1および第2ダイオードD1R,D1S並びに下アームの第3および第4ダイオードD2R,D2Sから成るダイオードブリッジと、力率改善用の第1および第2スイッチング素子SWR,SWSとを備える。それらのうち第1および第2ダイオードD1R,D1Sは、ワイドバンドギャップ半導体を用いて形成したショットキーバリアダイオードであり、第3および第4ダイオードD2R,D2S並びに第1および第2スイッチング素子SWR,SWSはシリコンを用いて形成したショットキーバリアダイオードである。
【選択図】図3
Description
図1は、本発明に係る半導体モジュールであるPFCモジュールの回路図である。同図の如く当該PFCモジュールは、第1〜第4ダイオードD1R,D1S,D2R,D2Sから成るダイオードブリッジと、力率改善用の第1および第2スイッチング素子SWR,SWSと、当該第1および第2スイッチング素子SWR,SWSを制御するドライバIC100を備えている。
図4は実施の形態2に係るPFCモジュールの構成図である。本実施の形態では、筐体200の内部において、SiCデバイスである第1および第2ダイオードD1R,D1Sを、第3および第4ダイオードD2R,D2Sや第1および第2スイッチング素子SWR,SWSよりも外側に配設している。すなわち第1および第2ダイオードD1R,D1Sは、リードフレーム101〜104が突出する筐体200の一側面の近くに配設される。また実施の形態1と同様に、第1および第2ダイオードD1R,D1Sを搭載する第1リードフレームは、筐体200の内部において、第1および第2ダイオードD1R,D1Sは下方(搭載面の垂直方向)に屈曲していない。
図5は実施の形態3に係るPFCモジュールの構成図である。本実施の形態でも、実施の形態2と同様に、筐体200の内部において、SiCデバイスである第1および第2ダイオードD1R,D1Sを、第3および第4ダイオードD2R,D2Sや第1および第2スイッチング素子SWR,SWSよりも外側(リードフレーム101〜104が突出する筐体200の一側面の近く)に配設している。
Claims (5)
- カソード同士が接続した第1および第2ダイオード並びにアノード同士が接続した第3および第4ダイオードを有し、前記第1および第3ダイオードが直列接続し、前記第2および第4ダイオードが直列接続して成るダイオードブリッジと、
前記第1ダイオードと第3ダイオードとの接続ノードに接続した第1スイッチング素子と、
前記第2ダイオードと第4ダイオードとの接続ノードに接続した第2スイッチング素子とを備え、
前記第1および第2ダイオードはワイドバンドギャップ半導体を用いて形成したショットキーバリアダイオードであり、
前記第3および第4ダイオード、並びに前記第1および第2スイッチング素子はシリコンを用いて形成したショットキーバリアダイオード並びにスイッチング素子である
ことを特徴とする半導体モジュール。 - 請求項1記載の半導体モジュールであって、
前記第1および第2ダイオードを搭載した第1リードフレームと、
前記第3ダイオードおよび第1スイッチング素子を搭載した第2リードフレームと、
前記第4ダイオードおよび第2スイッチング素子を搭載した第3リードフレームと、
前記第1〜第4ダイオード、第1および第2スイッチング素子並びに前記第1〜第3リードフレームを保持すると共に、当該半導体モジュールの筐体を構成するモールド樹脂とをさらに備え、
前記第1〜第3リードフレームの一部は、外部接続端子として、前記モールド樹脂から成る前記筐体の一側面から突出しており、
前記筐体の内部において、前記第1および第2ダイオードは、前記第3および第4ダイオード並びに前記第1および第2スイッチング素子よりも前記一側面の近くに配設されている
ことを特徴とする半導体モジュール。 - 請求項2記載の半導体モジュールであって、
前記筐体の内部において、前記第1リードフレームは、前記第1および第2ダイオードの搭載面の垂直方向に屈曲していない
ことを特徴とする半導体モジュール。 - 請求項2または請求項3記載の半導体モジュールであって、
前記筐体には当該筐体を貫通する貫通孔が形成されており、
前記第1および第2ダイオードの少なくとも片方は、平面視で前記筐体の前記貫通孔と前記一側面との間に配設されている
ことを特徴とする半導体モジュール。 - 請求項1から請求項4のいずれか一項記載の半導体モジュールであって、
前記第1および第2スイッチング素子を駆動するドライバICをさらに備える
ことを特徴とする半導体モジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011028184A JP5484372B2 (ja) | 2011-02-14 | 2011-02-14 | 半導体モジュール |
US13/298,711 US8643026B2 (en) | 2011-02-14 | 2011-11-17 | Semiconductor module |
CN201110453505XA CN102637679A (zh) | 2011-02-14 | 2011-12-30 | 半导体模块 |
CN201310265179.9A CN103325759B (zh) | 2011-02-14 | 2011-12-30 | 半导体模块 |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011028184A JP5484372B2 (ja) | 2011-02-14 | 2011-02-14 | 半導体モジュール |
Publications (3)
Publication Number | Publication Date |
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JP2012169397A true JP2012169397A (ja) | 2012-09-06 |
JP2012169397A5 JP2012169397A5 (ja) | 2013-08-01 |
JP5484372B2 JP5484372B2 (ja) | 2014-05-07 |
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JP2011028184A Active JP5484372B2 (ja) | 2011-02-14 | 2011-02-14 | 半導体モジュール |
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US (1) | US8643026B2 (ja) |
JP (1) | JP5484372B2 (ja) |
CN (2) | CN103325759B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013172469A (ja) * | 2012-02-17 | 2013-09-02 | Mitsubishi Electric Corp | パワーモジュール及び空調装置 |
JP2014086536A (ja) * | 2012-10-23 | 2014-05-12 | Renesas Electronics Corp | 半導体装置および半導体装置の製造方法 |
JP2016082056A (ja) * | 2014-10-16 | 2016-05-16 | 日本インター株式会社 | パワーモジュール及びパワーユニット |
KR20190059979A (ko) | 2017-09-05 | 2019-05-31 | 가부시키가이샤 알박 | 반도체 장치를 제조하기 위한 방법 및 반도체 장치 |
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JP6094420B2 (ja) * | 2013-08-09 | 2017-03-15 | 三菱電機株式会社 | 半導体装置 |
CN106165280B (zh) * | 2014-04-08 | 2018-12-14 | 三菱电机株式会社 | 模压模块 |
WO2015173862A1 (ja) * | 2014-05-12 | 2015-11-19 | 三菱電機株式会社 | 電力用半導体装置及びその製造方法 |
JP7109347B2 (ja) * | 2018-12-03 | 2022-07-29 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
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2011
- 2011-02-14 JP JP2011028184A patent/JP5484372B2/ja active Active
- 2011-11-17 US US13/298,711 patent/US8643026B2/en active Active
- 2011-12-30 CN CN201310265179.9A patent/CN103325759B/zh active Active
- 2011-12-30 CN CN201110453505XA patent/CN102637679A/zh active Pending
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JP2003219687A (ja) * | 2002-01-23 | 2003-07-31 | Mitsubishi Electric Corp | モータ駆動装置及び送風機及び圧縮機及び冷凍空調装置 |
JP2004047883A (ja) * | 2002-07-15 | 2004-02-12 | Mitsubishi Electric Corp | 電力半導体装置 |
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JP2013172469A (ja) * | 2012-02-17 | 2013-09-02 | Mitsubishi Electric Corp | パワーモジュール及び空調装置 |
JP2014086536A (ja) * | 2012-10-23 | 2014-05-12 | Renesas Electronics Corp | 半導体装置および半導体装置の製造方法 |
JP2016082056A (ja) * | 2014-10-16 | 2016-05-16 | 日本インター株式会社 | パワーモジュール及びパワーユニット |
KR20190059979A (ko) | 2017-09-05 | 2019-05-31 | 가부시키가이샤 알박 | 반도체 장치를 제조하기 위한 방법 및 반도체 장치 |
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JP5484372B2 (ja) | 2014-05-07 |
CN102637679A (zh) | 2012-08-15 |
CN103325759B (zh) | 2016-04-13 |
US8643026B2 (en) | 2014-02-04 |
US20120206196A1 (en) | 2012-08-16 |
CN103325759A (zh) | 2013-09-25 |
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