CN102637679A - 半导体模块 - Google Patents

半导体模块 Download PDF

Info

Publication number
CN102637679A
CN102637679A CN201110453505XA CN201110453505A CN102637679A CN 102637679 A CN102637679 A CN 102637679A CN 201110453505X A CN201110453505X A CN 201110453505XA CN 201110453505 A CN201110453505 A CN 201110453505A CN 102637679 A CN102637679 A CN 102637679A
Authority
CN
China
Prior art keywords
diode
diodes
switch element
lead frame
housing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201110453505XA
Other languages
English (en)
Chinese (zh)
Inventor
加藤正博
中川信也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to CN201310265179.9A priority Critical patent/CN103325759B/zh
Publication of CN102637679A publication Critical patent/CN102637679A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
    • H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
    • H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49537—Plurality of lead frames mounted in one device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H02M1/4208—Arrangements for improving power factor of AC input
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Rectifiers (AREA)
CN201110453505XA 2011-02-14 2011-12-30 半导体模块 Pending CN102637679A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310265179.9A CN103325759B (zh) 2011-02-14 2011-12-30 半导体模块

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-028184 2011-02-14
JP2011028184A JP5484372B2 (ja) 2011-02-14 2011-02-14 半導体モジュール

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201310265179.9A Division CN103325759B (zh) 2011-02-14 2011-12-30 半导体模块

Publications (1)

Publication Number Publication Date
CN102637679A true CN102637679A (zh) 2012-08-15

Family

ID=46622021

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201110453505XA Pending CN102637679A (zh) 2011-02-14 2011-12-30 半导体模块
CN201310265179.9A Active CN103325759B (zh) 2011-02-14 2011-12-30 半导体模块

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201310265179.9A Active CN103325759B (zh) 2011-02-14 2011-12-30 半导体模块

Country Status (3)

Country Link
US (1) US8643026B2 (enExample)
JP (1) JP5484372B2 (enExample)
CN (2) CN102637679A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104347611A (zh) * 2013-08-09 2015-02-11 三菱电机株式会社 半导体装置
CN106463420A (zh) * 2014-05-12 2017-02-22 三菱电机株式会社 电力用半导体装置及其制造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5875402B2 (ja) * 2012-02-17 2016-03-02 三菱電機株式会社 パワーモジュール及び空調装置
JP2014086536A (ja) * 2012-10-23 2014-05-12 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
JP6312170B2 (ja) * 2014-04-08 2018-04-18 三菱電機株式会社 モールドモジュール
JP6537246B2 (ja) * 2014-10-16 2019-07-03 京セラ株式会社 パワーモジュール及びパワーユニット
US11411120B2 (en) 2017-09-05 2022-08-09 Ulvac, Inc. Method for manufacturing semiconductor device using plasma CVD process
JP7109347B2 (ja) * 2018-12-03 2022-07-29 三菱電機株式会社 半導体装置および電力変換装置
JP7785815B2 (ja) * 2022-11-17 2025-12-15 海信家電集団股▲ふん▼有限公司 パワーモジュール及び設備
WO2024103986A1 (zh) * 2022-11-17 2024-05-23 海信家电集团股份有限公司 功率模块和设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138343A (ja) * 1998-10-30 2000-05-16 Mitsubishi Electric Corp 半導体装置
WO2009136591A1 (ja) * 2008-05-08 2009-11-12 トヨタ自動車株式会社 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9502249D0 (sv) 1995-06-21 1995-06-21 Abb Research Ltd Converter circuitry having at least one switching device and circuit module
JP3201277B2 (ja) 1996-09-11 2001-08-20 株式会社日立製作所 半導体装置
JPH11233712A (ja) 1998-02-12 1999-08-27 Hitachi Ltd 半導体装置及びその製法とそれを使った電気機器
JP4450530B2 (ja) 2001-07-03 2010-04-14 三菱電機株式会社 インバータモジュール
JP3676737B2 (ja) * 2002-01-23 2005-07-27 三菱電機株式会社 モータ駆動装置及び送風機及び圧縮機及び冷凍空調装置
JP4262453B2 (ja) * 2002-07-15 2009-05-13 三菱電機株式会社 電力半導体装置
JP4222193B2 (ja) * 2003-11-26 2009-02-12 トヨタ自動車株式会社 半導体装置
US7355368B2 (en) * 2004-08-12 2008-04-08 International Rectifier Corporation Efficient in-rush current limiting circuit with dual gated bidirectional hemts
JP2008060430A (ja) * 2006-08-31 2008-03-13 Daikin Ind Ltd 電力変換装置
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
WO2011052410A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Power diode, rectifier, and semiconductor device including the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138343A (ja) * 1998-10-30 2000-05-16 Mitsubishi Electric Corp 半導体装置
JP4073559B2 (ja) * 1998-10-30 2008-04-09 三菱電機株式会社 半導体装置
WO2009136591A1 (ja) * 2008-05-08 2009-11-12 トヨタ自動車株式会社 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104347611A (zh) * 2013-08-09 2015-02-11 三菱电机株式会社 半导体装置
CN104347611B (zh) * 2013-08-09 2017-09-01 三菱电机株式会社 半导体装置
CN106463420A (zh) * 2014-05-12 2017-02-22 三菱电机株式会社 电力用半导体装置及其制造方法
CN106463420B (zh) * 2014-05-12 2019-07-26 三菱电机株式会社 电力用半导体装置及其制造方法

Also Published As

Publication number Publication date
US8643026B2 (en) 2014-02-04
JP2012169397A (ja) 2012-09-06
CN103325759A (zh) 2013-09-25
US20120206196A1 (en) 2012-08-16
CN103325759B (zh) 2016-04-13
JP5484372B2 (ja) 2014-05-07

Similar Documents

Publication Publication Date Title
CN103325759B (zh) 半导体模块
US9865529B2 (en) Semiconductor module with conductive pin
JP6513303B2 (ja) 電力用半導体モジュールおよび電力変換装置
CN106158839B (zh) 半导体器件
US10304761B2 (en) Semiconductor device and alternator using same
CN105742278A (zh) 半导体装置
CN105280625A (zh) 半导体装置和电子设备
EP3104412B1 (en) Power semiconductor module
JP2012169397A5 (enExample)
JP6750620B2 (ja) 半導体モジュール
US20200027957A1 (en) Semiconductor device
US10916531B2 (en) Semiconductor module
CN111987091A (zh) 半导体装置
CN106133908A (zh) 半导体装置及汇流条
WO2025252145A1 (zh) 一种塑封boost半导体模块及封装结构
US20150270201A1 (en) Semiconductor module package and method of manufacturing the same
CN110391215A (zh) 功率模块及其制造方法
JP5566354B2 (ja) 電力用半導体スイッチおよび電力変換装置
US10848074B2 (en) High voltage bridge rectifier
CN111613608A (zh) 用于多芯片功率半导体器件的封装
US10148190B2 (en) Power conversion device
CN204046866U (zh) 半导体模块、led驱动装置以及led照明装置
JP7278077B2 (ja) 半導体装置およびその製造方法
JP2023044583A (ja) 半導体装置
CN111341749B (zh) 半导体模块

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120815