JP5462936B2 - シリコン太陽電池の個別化方法 - Google Patents
シリコン太陽電池の個別化方法 Download PDFInfo
- Publication number
- JP5462936B2 JP5462936B2 JP2012511246A JP2012511246A JP5462936B2 JP 5462936 B2 JP5462936 B2 JP 5462936B2 JP 2012511246 A JP2012511246 A JP 2012511246A JP 2012511246 A JP2012511246 A JP 2012511246A JP 5462936 B2 JP5462936 B2 JP 5462936B2
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- silicon wafer
- cutting
- solar cells
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 56
- 229910052710 silicon Inorganic materials 0.000 title claims description 56
- 239000010703 silicon Substances 0.000 title claims description 56
- 238000000034 method Methods 0.000 title claims description 15
- 238000000926 separation method Methods 0.000 claims description 19
- 238000005520 cutting process Methods 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000155 melt Substances 0.000 description 9
- 238000003698 laser cutting Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000009412 basement excavation Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Photovoltaic Devices (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009026410A DE102009026410A1 (de) | 2009-05-20 | 2009-05-20 | Verfahren zum Vereinzeln von Silizium-Solarzellen |
| DE102009026410.8 | 2009-05-20 | ||
| PCT/EP2010/056708 WO2010133536A1 (de) | 2009-05-20 | 2010-05-17 | Verfahren zum vereinzeln von silizium-solarzellen |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012527753A JP2012527753A (ja) | 2012-11-08 |
| JP2012527753A5 JP2012527753A5 (enExample) | 2013-06-13 |
| JP5462936B2 true JP5462936B2 (ja) | 2014-04-02 |
Family
ID=42309524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012511246A Active JP5462936B2 (ja) | 2009-05-20 | 2010-05-17 | シリコン太陽電池の個別化方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20110124147A1 (enExample) |
| EP (1) | EP2291867B1 (enExample) |
| JP (1) | JP5462936B2 (enExample) |
| DE (1) | DE102009026410A1 (enExample) |
| WO (1) | WO2010133536A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011012275A1 (de) * | 2011-02-24 | 2012-08-30 | Ritek Corp. | Verfahren zum Schneiden eines Solarzellenpanels und Ausrüstung dafür |
| DE102012214335A1 (de) * | 2012-08-10 | 2014-02-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Ablation einer Schicht |
| DE102012217766B4 (de) * | 2012-09-28 | 2016-06-16 | Trumpf Werkzeugmaschinen Gmbh + Co. Kg | Verfahren und Vorrichtung zum Dampfdruck-Abtragschneiden eines metallischen Werkstücks |
| JP5492354B1 (ja) * | 2012-10-02 | 2014-05-14 | 株式会社カネカ | 結晶シリコン太陽電池の製造方法、太陽電池モジュールの製造方法、結晶シリコン太陽電池並びに太陽電池モジュール |
| JP2014194977A (ja) * | 2013-03-28 | 2014-10-09 | Kaneka Corp | 結晶シリコン系太陽電池およびその製造方法 |
| JP6181979B2 (ja) * | 2013-05-29 | 2017-08-16 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
| JP6313086B2 (ja) * | 2014-03-27 | 2018-04-18 | 株式会社カネカ | 結晶シリコン太陽電池およびその製造方法、太陽電池モジュールの製造方法、集光型太陽電池モジュールの製造方法 |
| US9776906B2 (en) * | 2014-03-28 | 2017-10-03 | Electro Scientific Industries, Inc. | Laser machining strengthened glass |
| DE102018123485B4 (de) | 2018-09-24 | 2021-04-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Auftrennen eines Halbleiterbauelements mit einem pn-Übergang |
| DE102018123484A1 (de) * | 2018-09-24 | 2020-03-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Vereinzeln eines Halbleiterbauelementes mit einem pn-Übergang und Halbleiterbauelement mit einem pn-Übergang |
| ES2997232T3 (en) * | 2019-05-08 | 2025-02-14 | Wsoptics Tech Gmbh | Method and device for laser processing a workpiece |
| WO2020246697A1 (ko) | 2019-06-04 | 2020-12-10 | 주성엔지니어링(주) | 태양전지용 기판, 태양전지, 및 태양전지 제조방법 |
| EP4059060A1 (en) | 2019-11-13 | 2022-09-21 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method for creating shunt free translucent flexible thin-film photovoltaic module |
| CN113555463A (zh) * | 2020-04-23 | 2021-10-26 | 苏州阿特斯阳光电力科技有限公司 | 太阳能电池的制备方法与太阳能电池 |
| US11764315B2 (en) * | 2020-09-16 | 2023-09-19 | Maxeon Solar Pte. Ltd. | Solar cell separation with edge coating |
| CN112054096A (zh) * | 2020-09-29 | 2020-12-08 | 天合光能股份有限公司 | 一种切片单晶硅电池的制备方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07120646B2 (ja) * | 1990-05-16 | 1995-12-20 | 株式会社東芝 | メサ型半導体ペレットの製造方法 |
| DE19624677A1 (de) * | 1996-06-20 | 1998-01-02 | Siemens Ag | Verfahren zur Vereinzelung von optoelektrischen Bauelementen |
| JP3516156B2 (ja) * | 1997-12-16 | 2004-04-05 | シャープ株式会社 | 太陽電池の製造方法および保護カバー用素材板 |
| US6420245B1 (en) * | 1999-06-08 | 2002-07-16 | Kulicke & Soffa Investments, Inc. | Method for singulating semiconductor wafers |
| JP4786010B2 (ja) * | 2000-03-23 | 2011-10-05 | 株式会社カネカ | 集積型ハイブリッド薄膜太陽電池の製造方法 |
| JP2003151921A (ja) * | 2001-11-09 | 2003-05-23 | Sanyo Electric Co Ltd | 化合物半導体とその製造方法 |
| ATE316691T1 (de) * | 2002-04-19 | 2006-02-15 | Xsil Technology Ltd | Laser-behandlung |
| GB2402230B (en) * | 2003-05-30 | 2006-05-03 | Xsil Technology Ltd | Focusing an optical beam to two foci |
| JP4369259B2 (ja) * | 2004-02-19 | 2009-11-18 | シャープ株式会社 | 太陽電池セルの製造方法 |
| JP2006027025A (ja) * | 2004-07-14 | 2006-02-02 | Seiko Epson Corp | 基板の切断方法、および半導体チップの製造方法 |
| JP4439477B2 (ja) * | 2005-03-29 | 2010-03-24 | 三洋電機株式会社 | 光起電力素子及びその製造方法 |
| JP4717545B2 (ja) * | 2005-08-01 | 2011-07-06 | シャープ株式会社 | 光電変換素子の製造方法 |
| ATE503603T1 (de) * | 2007-01-08 | 2011-04-15 | Spi Lasers Uk Ltd | Verfahren zum laserschneiden eines nichtmetallischen materials |
-
2009
- 2009-05-20 DE DE102009026410A patent/DE102009026410A1/de not_active Withdrawn
-
2010
- 2010-05-17 WO PCT/EP2010/056708 patent/WO2010133536A1/de not_active Ceased
- 2010-05-17 JP JP2012511246A patent/JP5462936B2/ja active Active
- 2010-05-17 EP EP10719944A patent/EP2291867B1/de not_active Not-in-force
-
2011
- 2011-02-04 US US13/020,972 patent/US20110124147A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20110124147A1 (en) | 2011-05-26 |
| EP2291867A1 (de) | 2011-03-09 |
| DE102009026410A1 (de) | 2011-03-17 |
| JP2012527753A (ja) | 2012-11-08 |
| EP2291867B1 (de) | 2012-05-16 |
| WO2010133536A1 (de) | 2010-11-25 |
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