CN112054096A - 一种切片单晶硅电池的制备方法 - Google Patents
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000003698 laser cutting Methods 0.000 claims abstract description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 74
- 229910052710 silicon Inorganic materials 0.000 claims description 74
- 239000010703 silicon Substances 0.000 claims description 74
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 44
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 44
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 31
- 238000004140 cleaning Methods 0.000 claims description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims description 16
- 239000011574 phosphorus Substances 0.000 claims description 16
- 229910004205 SiNX Inorganic materials 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 238000007650 screen-printing Methods 0.000 claims description 12
- 238000012360 testing method Methods 0.000 claims description 12
- 238000005336 cracking Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 238000004806 packaging method and process Methods 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 229910017107 AlOx Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 230000008646 thermal stress Effects 0.000 claims description 3
- 238000005491 wire drawing Methods 0.000 claims description 3
- 230000005641 tunneling Effects 0.000 claims description 2
- NEPLKJAINOWIJL-DHNNRRLOSA-N dnc014884 Polymers C1C2=CC3=CC=CC=C3N2[C@@]2(C)[C@@H]1[C@@]1(C)CCC(=O)C(C)(C)[C@@H]1CC2 NEPLKJAINOWIJL-DHNNRRLOSA-N 0.000 claims 2
- OZJHCMYAXLCFKU-UHFFFAOYSA-N Polyavolensinone Natural products CC1(C)C2CCC3n4c(CC3(C)C2(C)CCC1=O)cc5ccccc45 OZJHCMYAXLCFKU-UHFFFAOYSA-N 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 14
- 238000011049 filling Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 37
- 239000010408 film Substances 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010301 surface-oxidation reaction Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
本发明属于晶体硅太阳电池领域，涉及一种切片单晶硅电池的制备方法，先将硅片用激光沿着垂直于硅片拉丝线痕方向的中心线进行切割，然后将硅片裂开，得到半片硅片，再将半片硅片制作成成品电池。本发明可以显著减弱由于激光切割导致的成品太阳能电池填充因子下降，减少切半效率损失，提高切半组件的功率。
Description
技术领域
本发明属于晶体硅太阳电池领域，涉及一种切片单晶硅电池的制备方法。
背景技术
随着太阳能电池技术的发展，切片电池得到了研究。现有的切片电池多为制备完全的整片电池切割而成，但是在切割以及裂片过程中不可避免地会对电池片造成损伤，使得切片电池的效率降低。
最近，部分企业使用更大尺寸的硅片做太阳电池，如210mm*210mm的硅片，制作组件时会将太阳电池用激光一切为三，必然使得两个边都是激光切割面的那片太阳电池片效率降低更多，从而引起电池片串焊失配。同样地，叠瓦组件要求将一片太阳电池切割为多份，电池片效率降低更为显著。
发明内容
本发明的目的是针对上述问题，提供一种切片单晶硅电池的制备方法。
为达到上述目的，本发明采用了下列技术方案：
一种切片单晶硅电池的制备方法，先将硅片用激光沿着垂直于硅片拉丝线痕方向的中心线进行切割，然后将硅片裂开，得到半片硅片，再将半片硅片制作成成品电池。
进一步的，所述的激光为低功率开模激光。
进一步的，所述的激光功率为4-6W，所述的激光切割的光斑大小为5-50μm，激光切割线位于中心线位置的±200μm内，硅片裂开采用机械裂片、热激光裂片或热应力裂片。
进一步的，所述的成品电池为p型衬底的晶体硅太阳电池或n型衬底的晶体硅太阳电池。
进一步的，所述的成品电池为PERC太阳电池，半片硅片依次经过硅片清洗制绒、磷扩散、激光选择性发射极、热氧化、背面清洗、抛光、热氧化、背表面AlOx钝化、背表面SiNx沉积、前表面SiNx沉积、丝网印刷、退火、测试分选和半片电池封装成组件的步骤后得到PERC太阳电池。
进一步的，所述的PERC太阳电池包括PERC电池p型硅基底，在PERC电池p型硅基底正面由内而外依次沉积有磷扩散发射极和PERC电池减反射膜，PERC电池前电极穿过PERC电池减反射膜连接第一磷扩散发射极，在PERC电池p型硅基底反面由内而外依次沉积有PERC电池背面第一钝化层和PERC电池背面第二钝化层，PERC电池背面电极连接PERC电池背面第二钝化层。
进一步的，所述的成品电池为TOPCon太阳电池，半片硅片依次经过硅片清洗制绒、硼扩散、背面清洗、去背面p-n结、氧化、背面LPCVD沉积poly-Si薄膜、poly-Si n型掺杂、湿法清洗、前后表面介质膜钝化和减反射膜沉积、丝网印刷、烧结、测试分选和半片电池封装成组件的步骤后得到TOPCon太阳电池。
进一步的，所述的TOPCon太阳电池包括TOPCon太阳电池n型硅基底，在TOPCon太阳电池n型硅基底正面由内而外依次沉积有第二磷扩散发射极和TOPCon太阳电池减反射膜，TOPCon太阳电池前电极穿过TOPCon太阳电池减反射膜后连接第二磷扩散发射极，在TOPCon太阳电池n型硅基底背面由内而外依次沉积有隧穿氧化层、磷掺杂多晶硅薄膜和背面SiNx:H薄膜，TOPCon太阳电池背面电极穿过背面SiNx:H薄膜后连接磷掺杂多晶硅薄膜。
进一步的，所述的成品电池为HIT太阳电池，半片硅片依次经过硅片清洗制绒、PECVD生长前后表面本征非晶硅层和掺杂非晶硅层、前后TCO导电膜沉积、丝网印刷、烧结、退火、测试分选和半片电池封装成组件的步骤后得到HIT太阳电池。
进一步的，所述的HIT太阳电池包括HIT太阳电池n型硅基底，在HIT太阳电池n型硅基底正面由内而外依次沉积有前表面本征非晶硅层、p型非晶硅层和前表面氧化透明导电层，HIT太阳电池前电极连接前表面氧化透明导电层，HIT太阳电池n型硅基底背面由内而外依次沉积有背表面本征非晶硅层、n型非晶硅层和背表面氧化透明导电层，HIT太阳电池背面电极连接背表面氧化透明导电层。
与现有的技术相比，本发明的优点在于：
本发明对整片硅片进行低功率激光划片，并裂片得到半片硅片，接着做其他正常的电池工艺。半片硅片制备过程中存在的损伤层可以在制绒和背面刻蚀步骤中去除，而且后续的镀减反膜等步骤可以提供介质钝化和氢钝化，降低半片电池横截面的少子复合。相比整片切半形成的半片电池，本发明可以显著减弱由于激光切割导致的成品太阳能电池填充因子下降，减少切半效率损失，提高切半组件的功率。
本发明的其它优点、目标和特征将部分通过下面的说明体现，部分还将通过对本发明的研究和实践而为本领域的技术人员所理解。
附图说明
图1是PERC太阳电池的结构示意图。
图2是TOPCon太阳电池的结构示意图。
图3是HIT太阳电池的结构示意图。
具体实施方式
为了使本技术领域的人员更好的理解本发明方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整的描述。
一种切片单晶硅电池的制备方法，先将硅片用激光沿着垂直于硅片拉丝线痕方向的中心线进行切割，然后将硅片裂开，得到半片硅片，再将半片硅片制作成成品电池。
本发明的方法适用于太阳电池硅片的所有尺寸，如158.75mm*158.75mm,156.75mm*156.75mm，以及目前市场上的大硅片210mm*210mm等。硅片切割，可一切为二，可一切为三，也可一切为多。
本实施例中，优选的，激光为低功率开模激光。激光功率为4-6W，所述的激光切割的光斑大小为5-50μm，激光切割线位于中心线位置的±200μm内，硅片裂开采用机械裂片、热激光裂片或热应力裂片。
成品电池为p型衬底的晶体硅太阳电池或n型衬底的晶体硅太阳电池。
在本实施例中，成品电池为PERC太阳电池，半片硅片依次经过硅片清洗制绒、磷扩散、激光选择性发射极、热氧化、背面清洗、抛光、热氧化、背表面AlOx钝化、背表面SiNx沉积、前表面SiNx沉积、丝网印刷、退火、测试分选和半片电池封装成组件的步骤后得到PERC太阳电池。
如图1所示，PERC太阳电池包括PERC电池p型硅基底4，在PERC电池p型硅基底4正面由内而外依次沉积有磷扩散发射极3和PERC电池减反射膜2，PERC电池前电极1穿过PERC电池减反射膜2连接第一磷扩散发射极3，在PERC电池p型硅基底4反面由内而外依次沉积有PERC电池背面第一钝化层5和PERC电池背面第二钝化层6，PERC电池背面电极7连接PERC电池背面第二钝化层6。
另一种方案，成品电池为TOPCon太阳电池，半片硅片依次经过硅片清洗制绒、硼扩散、背面清洗、去背面p-n结、氧化、背面LPCVD沉积poly-Si薄膜、poly-Si n型掺杂、湿法清洗、前后表面介质膜钝化和减反射膜沉积、丝网印刷、烧结、测试分选和半片电池封装成组件的步骤后得到TOPCon太阳电池。
如图2所示，TOPCon太阳电池包括TOPCon太阳电池n型硅基底11，在TOPCon太阳电池n型硅基底正面由内而外依次沉积有第二磷扩散发射极10和TOPCon太阳电池减反射膜9，TOPCon太阳电池前电极8穿过TOPCon太阳电池减反射膜9后连接第二磷扩散发射极10，在TOPCon太阳电池n型硅基底背面由内而外依次沉积有隧穿氧化层12、磷掺杂多晶硅薄膜13和背面SiNx:H薄膜14，TOPCon太阳电池背面电极15穿过背面SiNx:H薄膜14后连接磷掺杂多晶硅薄膜13。
另一种方案，成品电池为HIT太阳电池，半片硅片依次经过硅片清洗制绒、PECVD生长前后表面本征非晶硅层和掺杂非晶硅层、前后TCO导电膜沉积、丝网印刷、烧结、退火、测试分选和半片电池封装成组件的步骤后得到HIT太阳电池。
如图3所示，HIT太阳电池包括HIT太阳电池n型硅基底20，在HIT太阳电池n型硅基底20正面由内而外依次沉积有前表面本征非晶硅层19、p型非晶硅层18和前表面氧化透明导电层17，HIT太阳电池前电极16连接前表面氧化透明导电层17，HIT太阳电池n型硅基底20背面由内而外依次沉积有背表面本征非晶硅层21、n型非晶硅层22和背表面氧化透明导电层23，HIT太阳电池背面电极24连接背表面氧化透明导电层23。
对比例1
PERC太阳电池的制作，硅片依次经过硅片清洗制绒、磷扩散、激光选择性发射极、热氧化、背面清洗、抛光、热氧化、背表面AlOx钝化、背表面SiNx沉积、前表面SiNx沉积、丝网印刷、退火、测试分选和切半片步骤，半片电池封装成组件后得到PERC太阳电池。
本对比例上述步骤中的各个具体参数，与实施例1相同，为太阳电池制作的基本步骤。
对比例2
一种TOPCon太阳电池的制作方法，整片硅片依次经过硅片清洗制绒、硼扩散、背面清洗、去背面p-n结、氧化、背面LPCVD沉积poly-Si薄膜、poly-Si n型掺杂、湿法清洗、前后表面介质膜钝化和减反射膜沉积、丝网印刷、烧结、测试分选和切半片的步骤，半片电池封装后得到TOPCon太阳电池。
本对比例上述步骤中的各个具体参数，与实施例1相同，为太阳电池制作的基本步骤。
对比例3
一种HIT太阳电池，整片硅片依次经过硅片清洗制绒、PECVD生长前后表面本征非晶硅层和掺杂非晶硅层、前后TCO导电膜沉积、丝网印刷、烧结、退火、测试分选和切半片的步骤，半片电池封装后得到HIT太阳电池。
本对比例上述步骤中的各个具体参数，与实施例1相同，为太阳电池制作的基本步骤。
数据对比：
对比例1的PERC太阳电池激光切半后半片电池的效率与实施例1的PERC太阳电池相比降低约0.1％-0.2％abs。
对比例2的TOPCon太阳电池激光切半后半片电池的效率与实施例1的TOPCon太阳电池相比降低约0.2-0.3％abs.
对比例3的HIT太阳电池激光切半后半片电池的与实施例1的HIT太阳电池相比效率降低约0.4-0.5％abs。
如果是一切三或者一切多，两个边都是激光切割面的那片太阳电池片效率降低更多，从而引起电池片串焊失配。同样地，叠瓦组件要求将一片太阳电池切割为多份，电池片效率降低更为显著。
本申请通过将硅片进行切半，半片硅片制备过程中存在的损伤层可以在制绒和背面刻蚀步骤中去除，而且后续的镀减反膜等步骤可以提供介质钝化和氢钝化，降低半片电池横截面的少子复合。本申请可以显著减弱由于激光切割导致的成品太阳能电池填充因子下降，减少切半效率损失，提高切半组件的功率。
本文中所描述的具体实施例仅仅是对本发明精神作举例说明。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代，但并不会偏离本发明的精神。
Claims (10)
1.一种切片单晶硅电池的制备方法，其特征在于，先将硅片用激光沿着垂直于硅片拉丝线痕方向的中心线进行切割，然后将硅片裂开，得到半片硅片，再将半片硅片制作成成品电池。
2.根据权利要求1所述的一种切片单晶硅电池的制备方法，其特征在于，所述的激光为低功率开模激光。
3.根据权利要求2所述的一种切片单晶硅电池的制备方法，其特征在于，所述的激光功率为4-6W，所述的激光切割的光斑大小为5-50μm，激光切割线位于中心线位置的±200μm内，硅片裂开采用机械裂片、热激光裂片或热应力裂片。
4.根据权利要求1所述的一种切片单晶硅电池的制备方法，其特征在于，所述的成品电池为p型衬底的晶体硅太阳电池或n型衬底的晶体硅太阳电池。
5.根据权利要求4所述的一种切片单晶硅电池的制备方法，其特征在于，所述的成品电池为PERC太阳电池，半片硅片依次经过硅片清洗制绒、磷扩散、激光选择性发射极、热氧化、背面清洗、抛光、热氧化、背表面AlOx钝化、背表面SiNx沉积、前表面SiNx沉积、丝网印刷、退火、测试分选和半片电池封装成组件的步骤后得到PERC太阳电池。
6.根据权利要求5所述的一种切片单晶硅电池的制备方法，其特征在于，所述的PERC太阳电池包括PERC电池p型硅基底(4)，在PERC电池p型硅基底(4)正面由内而外依次沉积有磷扩散发射极(3)和PERC电池减反射膜(2)，PERC电池前电极(1)穿过PERC电池减反射膜(2)连接第一磷扩散发射极(3)，在PERC电池p型硅基底(4)反面由内而外依次沉积有PERC电池背面第一钝化层(5)和PERC电池背面第二钝化层(6)，PERC电池背面电极(7)连接PERC电池背面第二钝化层(6)。
7.根据权利要求4所述的一种切片单晶硅电池的制备方法，其特征在于，所述的成品电池为TOPCon太阳电池，半片硅片依次经过硅片清洗制绒、硼扩散、背面清洗、去背面p-n结、氧化、背面LPCVD沉积poly-Si薄膜、poly-Sin型掺杂、湿法清洗、前后表面介质膜钝化和减反射膜沉积、丝网印刷、烧结、测试分选和半片电池封装成组件的步骤后得到TOPCon太阳电池。
8.根据权利要求7所述的一种切片单晶硅电池的制备方法，其特征在于，所述的TOPCon太阳电池包括TOPCon太阳电池n型硅基底(11)，在TOPCon太阳电池n型硅基底正面由内而外依次沉积有第二磷扩散发射极(10)和TOPCon太阳电池减反射膜(9)，TOPCon太阳电池前电极(8)穿过TOPCon太阳电池减反射膜(9)后连接第二磷扩散发射极(10)，在TOPCon太阳电池n型硅基底背面由内而外依次沉积有隧穿氧化层(12)、磷掺杂多晶硅薄膜(13)和背面SiNx:H薄膜(14)，TOPCon太阳电池背面电极(15)穿过背面SiNx:H薄膜(14)后连接磷掺杂多晶硅薄膜(13)。
9.根据权利要求4所述的一种切片单晶硅电池的制备方法，其特征在于，所述的成品电池为HIT太阳电池，半片硅片依次经过硅片清洗制绒、PECVD生长前后表面本征非晶硅层和掺杂非晶硅层、前后TCO导电膜沉积、丝网印刷、烧结、退火、测试分选和半片电池封装成组件的步骤后得到HIT太阳电池。
10.根据权利要求9所述的一种切片单晶硅电池的制备方法，其特征在于，所述的HIT太阳电池包括HIT太阳电池n型硅基底(20)，在HIT太阳电池n型硅基底(20)正面由内而外依次沉积有前表面本征非晶硅层(19)、p型非晶硅层(18)和前表面氧化透明导电层(17)，HIT太阳电池前电极(16)连接前表面氧化透明导电层(17)，HIT太阳电池n型硅基底(20)背面由内而外依次沉积有背表面本征非晶硅层(21)、n型非晶硅层(22)和背表面氧化透明导电层(23)，HIT太阳电池背面电极(24)连接背表面氧化透明导电层(23)。
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