CN111446308A - 一种太阳电池及激光切片方法 - Google Patents
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Abstract
本发明提供了一种太阳电池及激光切片方法，属于光伏技术领域。它包括电池本体，所述的电池本体前表面至少设有一条无发射极区域，具体方法是用激光在电池本体具有p‑n结一面，在后续的激光切片位置将有p‑n上面的磷硅玻璃或硼硅玻璃划开，接着用湿法腐蚀、干法刻蚀或机械刻蚀的方式将开膜区域的p‑n结构去除，形成无发射极区域,并制成电池，之后用激光沿着正面无发射极区域切割，或者沿着正面无发射极区域对应的电池背面的区域切割,将电池本体裂开。本发明可以消除激光切割对p‑n结的损伤，显著地减弱由于激光切割导致的太阳电池填充因子下降。
Description
技术领域
本发明属于光伏技术领域，涉及一种太阳电池及激光切片方法。
背景技术
激光切片技术是近几年来光伏组件端开发的高效技术，广泛用于切半组件和叠瓦组件制作中，组件功率可明显提升。然而激光切割损伤导致了切割后的太阳电池片的效率损失，进而减弱了切半组件或叠瓦组件的功率增益。
现有技术制备的晶体硅太阳电池在经过激光切半后其填充因子会显著降低,进而造成光电转换效率降低,以PERC太阳电池为例,激光切半后半片电池的效率降低约0.1％-0.2％abs，以TOPCon电池为例，激光切半后半片电池的效率降低约0.2-0.3％abs。最近，部分企业使用更大尺寸的硅片做太阳电池，如210mm×210mm的硅片，制作组件时会将太阳电池用激光一切为三，必然使得两个边都是激光切割面的那片太阳电池片效率降低更多，从而引起电池片串焊失配。同样地，叠瓦组件要求将一片太阳电池切割为多份，电池片效率降低更为显著。
发明内容
本发明的目的是针对上述问题，提供一种太阳电池。
本发明的另一目的是提供一种太阳电池的激光切片方法。
为达到上述目的，本发明采用了下列技术方案：
一种太阳电池，包括电池本体，所述的电池本体前表面至少设有一条无发射极区域。
进一步的，所述的电池本体包括p型硅基底，p型硅基底前表面从里到外依次设有PERC磷扩散发射极和PERC电池减反射膜，p型硅基底后表面从里到外依次设有第一PERC电池背面钝化层和第二PERC电池背面钝化层，所述的无发射极区域贯穿PERC磷扩散发射极和PERC电池减反射膜。
进一步的，所述的无发射极区域呈矩形，并将PERC磷扩散发射极和PERC电池减反射膜隔断。
进一步的，所述的电池本体包括n型硅基底，n型硅基底前表面从里到外依次设有TOPCon硼扩散发射极和TOPCon太阳电池减反射膜，n型硅基底后表面从里到外依次设有隧穿氧化层、磷掺杂多晶硅薄膜和背面SiNx:H薄膜，所述的无发射极区域贯穿TOPCon硼扩散发射极和TOPCon太阳电池减反射膜。
进一步的，所述的无发射极区域呈矩形，并将TOPCon硼扩散发射极和TOPCon太阳电池减反射膜隔断。
进一步的，无发射极区域2宽度为40μm-2000μm，深度小于1μm。
一种上述的太阳电池的激光切片方法，用激光在电池本体具有p-n结一面，在后续的激光切片位置将有p-n上面的磷硅玻璃或硼硅玻璃划开，接着用湿法腐蚀、干法刻蚀或机械刻蚀的方式将开膜区域的p-n结构去除，形成无发射极区域,并制成电池，之之后用激光沿着正面无发射极区域切割，或者沿着正面无发射极区域对应的电池背面的区域切割,将电池本体裂开。
进一步的，所述的无发射极区域宽度为40μm-2000μm，深度小于1μm，激光沿着正面无发射极区域或者沿着正面无发射极区域对应的电池背面区域切割的激光切割线光斑大小为5-50μm。
进一步的，所述的激光切割线位于无发射极区域中心轴位置的±200μm内。
进一步的，所述的激光切割线的中心轴与无发射极区域中心轴重合。
与现有的技术相比，本发明的优点在于：
现有技术制备的晶体硅太阳电池在经过激光切半后其填充因子会显著降低,进而造成光电转换效率降低,以PERC太阳电池为例,激光切半后半片电池的效率降低约0.1％-0.2％abs，以TOPCon电池为例，激光切半后半片电池的效率降低约0.2-0.3％abs。最近，部分企业使用更大尺寸的硅片做太阳电池，如210mm×210mm的硅片，制作组件时会将太阳电池用激光一切为三，必然使得两个边都是激光切割面的那片太阳电池片效率降低更多，从而引起电池片串焊失配。同样地，叠瓦组件要求将一片太阳电池切割为多份，电池片效率降低更为显著。
本专利技术可以消除激光切割对p-n结的损伤，显著地减弱由于激光切割导致的太阳电池填充因子下降，减弱效率损失，提高切片组件的功率。
本发明的其它优点、目标和特征将部分通过下面的说明体现，部分还将通过对本发明的研究和实践而为本领域的技术人员所理解。
附图说明
图1是本发明的电池本体的示意图。
图2是本发明的另一种电池本体的示意图。
图中：电池本体1、无发射极区域2、p型硅基底3、PERC磷扩散发射极4、PERC电池减反射膜5、第一PERC电池背面钝化层6、第二PERC电池背面钝化层7、n型硅基底8、TOPCon硼扩散发射极9、TOPCon太阳电池减反射膜10、隧穿氧化层11、磷掺杂多晶硅薄膜12、背面SiNx:H薄膜13。
具体实施方式
下面结合附图对本发明进行进一步说明。
实施例1
如图1所示，一种太阳电池，包括电池本体1，所述的电池本体1前表面至少设有一条无发射极区域2。
具体的说，所述的电池本体1包括p型硅基底3，p型硅基底前表面从里到外依次设有PERC磷扩散发射极4和PERC电池减反射膜5，p型硅基底后表面从里到外依次设有第一PERC电池背面钝化层6和第二PERC电池背面钝化层7，所述的无发射极区域2贯穿PERC磷扩散发射极4和PERC电池减反射膜5。
在本实施例中，无发射极区域2呈矩形，并将PERC磷扩散发射极4和PERC电池减反射膜5隔断。这里的隔断是指将PERC磷扩散发射极4和PERC电池减反射膜5一分为二或者一分为三或者一分为更多。也即一条无发射极区域2将PERC磷扩散发射极4和PERC电池减反射膜5分割一次，形成不连续的PERC磷扩散发射极4和PERC电池减反射膜5。
无发射极区域2宽度为40μm-2000μm，深度小于1μm。
本实施例提供了与激光切片技术相匹配的太阳电池,其结构特点是在激光切割位置，存在无p-n结区域，即无发射极区域2。该无p-n结区域在电池工艺过程中也会被介质膜钝化。激光切割沿着该无p-n结区域的中心轴。故而激光切割不会损伤到太阳电池的p-n结，从而降低了激光切割对太阳电池效率的影响。
本实施例采用低功率开膜激光在太阳电池的p-n结一面在后续的激光切片位置将p-n上部的磷硅玻璃或硼硅玻璃划开，接着用湿法腐蚀、干法刻蚀或机械刻蚀的方式将开膜区域的p-n结构去除，形成无发射极区域2，接着做其它正常的电池工艺。在激光切片工序中，激光沿着前述开膜区域的中心线进行切割，然后将太阳电池片裂开。该方法的好处是在激光切片工艺过程中，消除了激光对p-n结的损伤，可以显著地降低激光切片造成的电池功率损失。
实施例2
如图2所示，一种太阳电池，包括电池本体1，所述的电池本体1前表面至少设有一条无发射极区域2。
电池本体1包括n型硅基底8，n型硅基底8前表面从里到外依次设有TOPCon硼扩散发射极9和TOPCon太阳电池减反射膜10，n型硅基底8后表面从里到外依次设有隧穿氧化层11、磷掺杂多晶硅薄膜12和背面SiNx:H薄膜13，所述的无发射极区域2贯穿TOPCon硼扩散发射极9和TOPCon太阳电池减反射膜10。
无发射极区域2呈矩形，并将TOPCon硼扩散发射极9和TOPCon太阳电池减反射膜10隔断。
无发射极区域2可以根据激光切割线的宽度进行制定，通常应比激光切割线宽200μm。无发射极区域2宽度为40μm-2000μm，深度小于1μm。
本实施例提供了与激光切片技术相匹配的太阳电池,其结构特点是在激光切割位置，存在无p-n结区域，即无发射极区域2。该无p-n结区域在电池工艺过程中也会被介质膜钝化。激光切割沿着该无p-n结区域的中心轴。故而激光切割不会损伤到太阳电池的p-n结，从而降低了激光切割对太阳电池效率的影响。
本实施例采用低功率开膜激光在太阳电池的p-n结一面在后续的激光切片位置将p-n上部的磷硅玻璃或硼硅玻璃划开，接着用湿法腐蚀、干法刻蚀或机械刻蚀的方式将开膜区域的p-n结构去除，形成无发射极区域2，接着做其它正常的电池工艺。在激光切片工序中，激光沿着前述开膜区域的中心线进行切割，或者沿着正面无发射极区域对应的电池背面的区域切割,然后将太阳电池片裂开。该方法的好处是在激光切片工艺过程中，消除了激光对p-n结的损伤，可以显著地降低激光切片造成的电池功率损失。
实施例3
结合图1和图2所示，用激光在电池本体1具有p-n结一面，在后续的激光切片位置将有p-n上面的磷硅玻璃或硼硅玻璃划开，接着用湿法腐蚀、干法刻蚀或机械刻蚀的方式将开膜区域的p-n结构去除，形成无发射极区域2,并制成电池，之后用激光沿着无发射极区域2切割，将电池本体1裂开。所述的无发射极区域2宽度为40μm-2000μm，深度小于1μm，激光沿着无发射极区域2切割的激光切割线光斑大小为5-50μm。激光切割线位于无发射极区域2中心轴位置的±200μm内。优选，激光切割线的中心轴与无发射极区域2中心轴重合。
本实施例采用低功率开膜激光在太阳电池的p-n结一面在后续的激光切片位置将p-n上部的磷硅玻璃或硼硅玻璃划开，接着用湿法腐蚀、干法刻蚀或机械刻蚀的方式将开膜区域的p-n结构去除，形成无发射极区域2，接着做其它正常的电池工艺。在激光切片工序中，激光沿着前述开膜区域即无发射极区域2的中心线进行切割，或者沿着正面无发射极区域对应的电池背面的区域切割,然后将太阳电池片裂开。该方法的好处是在激光切片工艺过程中，消除了激光对p-n结的损伤，可以显著地降低激光切片造成的电池功率损失。激光切割为太阳电池生产中的现有技术，此处不再赘述。
实施例4
一种太阳电池的激光切片方法，太阳电池为p型PERC太阳电池，该p型PERC太阳电池前表面存在无发射极区域2，该区域呈矩形，依次经过硅片清洗制绒、磷扩散、激光选择性发射极、热氧化、激光前表面开膜(开膜线将硅片面积一分为二，或一分为三，或一分为多)、背面清洗、抛光、热氧化、背表面AlOx钝化、背表面SiNx沉积、前表面SiNx沉积、激光背面开膜、丝网印刷、退火、测试分选、激光切片(将硅片一分为二，或一分为三，或一分为多)和切片电池封装成组件(切半组件，或叠瓦组件)的步骤。
其中激光前表面开膜是在电池本体1具有p-n结一面，在后续的激光切片位置将有p-n上面的磷硅玻璃划开，接着用湿法腐蚀、干法刻蚀或机械刻蚀的方式将开膜区域的p-n结构去除，形成无发射极区域2。
激光切割线位于无发射极区域2中心轴位置的±200μm内。优选，激光切割线的中心轴与无发射极区域2中心轴重合。
激光切割为太阳电池生产中的现有技术，此处不再赘述。
实施例5
一种太阳电池的激光切片方法，太阳电池为n型TOPCon太阳电池，该n型TOPCon太阳电池前表面存在无发射极区域2，该区域呈矩形，依次经过硅片清洗制绒、硼扩散、背面清洗，去背面p-n结、氧化、背面LPCVD沉积poly-Si薄膜、poly-Si n型掺杂、激光前表面开膜(开膜线将硅片面积一分为二，或一分为三，或一分为多)、湿法清洗、前、后表面介质膜钝化和减反射膜沉积、丝网印刷，烧结等、测试分选、激光切片(将硅片一分为二，或一分为三，或一分为多)和切片电池封装成组件(切半组件，或叠瓦组件)的步骤。
其中激光前表面开膜是在电池本体1具有p-n结一面，在后续的激光切片位置将有p-n上面的硼硅玻璃划开，接着用湿法腐蚀、干法刻蚀或机械刻蚀的方式将开膜区域的p-n结构去除，形成无发射极区域2。
所述的无发射极区域2宽度为40μm-2000μm，深度小于1μm，激光沿着无发射极区域2切割的激光切割线光斑大小为5-50μm。
激光切割线位于无发射极区域2中心轴位置的±200μm内。优选，激光切割线的中心轴与无发射极区域2中心轴重合。
本文中所描述的具体实施例仅仅是对本发明精神作举例说明。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代，但并不会偏离本发明的精神。
Claims (10)
1.一种太阳电池，包括电池本体(1)，其特征在于，所述的电池本体(1)前表面至少设有一条无发射极区域(2)。
2.根据权利要求1所述的太阳电池，其特征在于，所述的电池本体(1)包括p型硅基底(3)，p型硅基底前表面从里到外依次设有PERC磷扩散发射极(4)和PERC电池减反射膜(5)，p型硅基底后表面从里到外依次设有第一PERC电池背面钝化层(6)和第二PERC电池背面钝化层(7)，所述的无发射极区域(2)贯穿PERC磷扩散发射极(4)和PERC电池减反射膜(5)。
3.根据权利要求3所述的太阳电池，其特征在于，所述的无发射极区域(2)呈矩形，并将PERC磷扩散发射极(4)和PERC电池减反射膜(5)隔断。
4.根据权利要求1所述的太阳电池，其特征在于，所述的电池本体(1)包括n型硅基底(8)，n型硅基底(8)前表面从里到外依次设有TOPCon硼扩散发射极(9)和TOPCon太阳电池减反射膜(10)，n型硅基底(8)后表面从里到外依次设有隧穿氧化层(11)、磷掺杂多晶硅薄膜(12)和背面SiNx:H薄膜(13)，所述的无发射极区域(2)贯穿TOPCon硼扩散发射极(9)和TOPCon太阳电池减反射膜(10)。
5.根据权利要求4所述的太阳电池，其特征在于，所述的无发射极区域(2)呈矩形，并将TOPCon硼扩散发射极(9)和TOPCon太阳电池减反射膜(10)隔断。
6.根据权利要求1所述的太阳电池，其特征在于，无发射极区域(2)宽度为40μm-2000μm，深度小于1μm。
7.根据权利要求1-5任意一项所述太阳电池的激光切片方法，其特征在于，用激光在电池本体(1)具有p-n结一面，在后续的激光切片位置将有p-n上面的磷硅玻璃或硼硅玻璃划开，接着用湿法腐蚀、干法刻蚀或机械刻蚀的方式将开膜区域的p-n结构去除，形成无发射极区域(2),并制成电池，之后用激光沿着正面无发射极区域(2)切割，或者沿着正面无发射极区域对应的电池背面的区域切割,将电池本体(1)裂开。
8.根据权利要求6所述的太阳电池的激光切片方法，其特征在于，所述的无发射极区域(2)宽度为40μm-2000μm，深度小于1μm，激光沿着正面无发射极区域(2)或者沿着正面无发射极区域对应的电池背面的区域切割的激光切割线光斑大小为5-50μm。
9.根据权利要求6所述的太阳电池的激光切片方法，其特征在于，所述的激光切割线位于无发射极区域(2)中心轴位置的±200μm内。
10.根据权利要求9所述的太阳电池的激光切片方法，其特征在于，所述的激光切割线的中心轴与无发射极区域(2)中心轴重合。
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