JP2009106977A - レーザ加工方法 - Google Patents
レーザ加工方法 Download PDFInfo
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- JP2009106977A JP2009106977A JP2007282065A JP2007282065A JP2009106977A JP 2009106977 A JP2009106977 A JP 2009106977A JP 2007282065 A JP2007282065 A JP 2007282065A JP 2007282065 A JP2007282065 A JP 2007282065A JP 2009106977 A JP2009106977 A JP 2009106977A
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- 238000003672 processing method Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 34
- 230000001678 irradiating effect Effects 0.000 claims abstract description 10
- 238000010128 melt processing Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000011218 segmentation Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 101100008049 Caenorhabditis elegans cut-5 gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Inorganic Chemistry (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
【解決手段】 31ns〜54nsのパルス幅で且つ7.5μm〜10μmのパルスピッチで、パルスレーザ光であるレーザ光Lを照射することにより、切断の起点となる改質領域7を切断予定ライン5に沿ってGaAs基板12に形成する。これにより、切断予定ライン5に沿ってGaAs基板12に形成された改質領域7は、加工対象物1の厚さ方向に亀裂を発生させ易いものとなる。従って、GaAs基板12を備える板状の加工対象物1に対し、切断の起点としての機能が極めて高い改質領域7を形成することができる。
【選択図】 図12
Description
(1)改質領域が溶融処理領域を含む場合
(2)改質領域がクラック領域を含む場合
(3)改質領域が屈折率変化領域を含む場合
Claims (4)
- GaAs基板を備える板状の加工対象物の内部に集光点を合わせてレーザ光を照射することにより、前記加工対象物の切断予定ラインに沿って、切断の起点となる改質領域を前記GaAs基板に形成するレーザ加工方法であって、
前記レーザ光はパルスレーザ光であり、前記レーザ光のパルス幅は31ns〜54nsであることを特徴とするレーザ加工方法。 - 前記レーザ光のパルスピッチは7.5μm〜10μmであることを特徴とする請求項1記載のレーザ加工方法。
- 前記改質領域を形成した後に、前記改質領域を起点として前記切断予定ラインに沿って前記加工対象物を切断することを特徴とする請求項1又は2記載のレーザ加工方法。
- 前記改質領域は溶融処理領域を含むことを特徴とする請求項1〜3のいずれか一項記載のレーザ加工方法。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007282065A JP5449665B2 (ja) | 2007-10-30 | 2007-10-30 | レーザ加工方法 |
US14/148,180 USRE45403E1 (en) | 2007-10-30 | 2008-10-27 | Laser processing method |
US12/670,029 US8420507B2 (en) | 2007-10-30 | 2008-10-27 | Laser processing method |
CN200880103871A CN101842184A (zh) | 2007-10-30 | 2008-10-27 | 激光加工方法 |
PCT/JP2008/069462 WO2009057558A1 (ja) | 2007-10-30 | 2008-10-27 | レーザ加工方法 |
CN201410109769.7A CN103934578A (zh) | 2007-10-30 | 2008-10-27 | 激光加工方法 |
CN201510791236.6A CN105364322A (zh) | 2007-10-30 | 2008-10-27 | 激光加工方法 |
CN201510790532.4A CN105364321A (zh) | 2007-10-30 | 2008-10-27 | 激光加工方法 |
KR1020097024447A KR101549271B1 (ko) | 2007-10-30 | 2008-10-27 | 레이저 가공 방법 |
TW097141657A TWI510322B (zh) | 2007-10-30 | 2008-10-29 | Laser processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007282065A JP5449665B2 (ja) | 2007-10-30 | 2007-10-30 | レーザ加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009106977A true JP2009106977A (ja) | 2009-05-21 |
JP5449665B2 JP5449665B2 (ja) | 2014-03-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007282065A Active JP5449665B2 (ja) | 2007-10-30 | 2007-10-30 | レーザ加工方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | USRE45403E1 (ja) |
JP (1) | JP5449665B2 (ja) |
KR (1) | KR101549271B1 (ja) |
CN (4) | CN101842184A (ja) |
TW (1) | TWI510322B (ja) |
WO (1) | WO2009057558A1 (ja) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
EP3664131A3 (en) | 2002-03-12 | 2020-08-19 | Hamamatsu Photonics K. K. | Substrate dividing method |
TWI326626B (en) | 2002-03-12 | 2010-07-01 | Hamamatsu Photonics Kk | Laser processing method |
EP2216128B1 (en) | 2002-03-12 | 2016-01-27 | Hamamatsu Photonics K.K. | Method of cutting object to be processed |
TWI520269B (zh) | 2002-12-03 | 2016-02-01 | Hamamatsu Photonics Kk | Cutting method of semiconductor substrate |
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TW200927354A (en) | 2009-07-01 |
KR20100076918A (ko) | 2010-07-06 |
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US20100200550A1 (en) | 2010-08-12 |
TWI510322B (zh) | 2015-12-01 |
CN105364322A (zh) | 2016-03-02 |
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US8420507B2 (en) | 2013-04-16 |
WO2009057558A1 (ja) | 2009-05-07 |
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