JP5462160B2 - メモリの動的電圧調整 - Google Patents

メモリの動的電圧調整 Download PDF

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Publication number
JP5462160B2
JP5462160B2 JP2010517037A JP2010517037A JP5462160B2 JP 5462160 B2 JP5462160 B2 JP 5462160B2 JP 2010517037 A JP2010517037 A JP 2010517037A JP 2010517037 A JP2010517037 A JP 2010517037A JP 5462160 B2 JP5462160 B2 JP 5462160B2
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Japan
Prior art keywords
test
memory
voltage level
voltage
circuit
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JP2010517037A
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English (en)
Japanese (ja)
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JP2010534896A (ja
JP2010534896A5 (enExample
Inventor
クレシ，カディア・エイ
ダヴァ，スシャマ
ジェウ，トーマス
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NXP USA Inc
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NXP USA Inc
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Publication of JP2010534896A5 publication Critical patent/JP2010534896A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
JP2010517037A 2007-07-13 2008-05-28 メモリの動的電圧調整 Active JP5462160B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/777,635 2007-07-13
US11/777,635 US7616509B2 (en) 2007-07-13 2007-07-13 Dynamic voltage adjustment for memory
PCT/US2008/064969 WO2009011977A1 (en) 2007-07-13 2008-05-28 Dynamic voltage adjustment for memory

Publications (3)

Publication Number Publication Date
JP2010534896A JP2010534896A (ja) 2010-11-11
JP2010534896A5 JP2010534896A5 (enExample) 2011-07-14
JP5462160B2 true JP5462160B2 (ja) 2014-04-02

Family

ID=40252976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010517037A Active JP5462160B2 (ja) 2007-07-13 2008-05-28 メモリの動的電圧調整

Country Status (6)

Country Link
US (1) US7616509B2 (enExample)
JP (1) JP5462160B2 (enExample)
KR (1) KR101498514B1 (enExample)
CN (1) CN101743598B (enExample)
TW (1) TWI490873B (enExample)
WO (1) WO2009011977A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12340857B2 (en) 2021-11-02 2025-06-24 Samsung Electronics Co., Ltd. Electronic device for adjusting driving voltage of volatile memory and method for operating the same

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CN107436820B (zh) * 2016-05-27 2020-07-17 深圳大心电子科技有限公司 解码方法、存储器存储装置及存储器控制电路单元
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12340857B2 (en) 2021-11-02 2025-06-24 Samsung Electronics Co., Ltd. Electronic device for adjusting driving voltage of volatile memory and method for operating the same

Also Published As

Publication number Publication date
JP2010534896A (ja) 2010-11-11
TWI490873B (zh) 2015-07-01
KR101498514B1 (ko) 2015-03-04
US7616509B2 (en) 2009-11-10
TW200907990A (en) 2009-02-16
CN101743598A (zh) 2010-06-16
US20090016140A1 (en) 2009-01-15
WO2009011977A1 (en) 2009-01-22
CN101743598B (zh) 2013-07-24
KR20100047216A (ko) 2010-05-07

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