CN101743598B - 用于存储器的动态电压调节 - Google Patents

用于存储器的动态电压调节 Download PDF

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Publication number
CN101743598B
CN101743598B CN200880024536.XA CN200880024536A CN101743598B CN 101743598 B CN101743598 B CN 101743598B CN 200880024536 A CN200880024536 A CN 200880024536A CN 101743598 B CN101743598 B CN 101743598B
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China
Prior art keywords
test
memory
voltage level
voltage
operating
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CN200880024536.XA
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English (en)
Chinese (zh)
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CN101743598A (zh
Inventor
Q·A·奎莱施
S·达瓦尔
托马斯·朱
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN101743598A publication Critical patent/CN101743598A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
CN200880024536.XA 2007-07-13 2008-05-28 用于存储器的动态电压调节 Active CN101743598B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/777,635 2007-07-13
US11/777,635 US7616509B2 (en) 2007-07-13 2007-07-13 Dynamic voltage adjustment for memory
PCT/US2008/064969 WO2009011977A1 (en) 2007-07-13 2008-05-28 Dynamic voltage adjustment for memory

Publications (2)

Publication Number Publication Date
CN101743598A CN101743598A (zh) 2010-06-16
CN101743598B true CN101743598B (zh) 2013-07-24

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CN200880024536.XA Active CN101743598B (zh) 2007-07-13 2008-05-28 用于存储器的动态电压调节

Country Status (6)

Country Link
US (1) US7616509B2 (enExample)
JP (1) JP5462160B2 (enExample)
KR (1) KR101498514B1 (enExample)
CN (1) CN101743598B (enExample)
TW (1) TWI490873B (enExample)
WO (1) WO2009011977A1 (enExample)

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Also Published As

Publication number Publication date
CN101743598A (zh) 2010-06-16
KR20100047216A (ko) 2010-05-07
US20090016140A1 (en) 2009-01-15
JP5462160B2 (ja) 2014-04-02
WO2009011977A1 (en) 2009-01-22
JP2010534896A (ja) 2010-11-11
US7616509B2 (en) 2009-11-10
TWI490873B (zh) 2015-07-01
TW200907990A (en) 2009-02-16
KR101498514B1 (ko) 2015-03-04

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Address after: Texas in the United States

Patentee after: NXP America Co Ltd

Address before: Texas in the United States

Patentee before: Fisical Semiconductor Inc.