KR101498514B1 - 메모리용 동적 전압 조정 - Google Patents

메모리용 동적 전압 조정 Download PDF

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Publication number
KR101498514B1
KR101498514B1 KR1020107000648A KR20107000648A KR101498514B1 KR 101498514 B1 KR101498514 B1 KR 101498514B1 KR 1020107000648 A KR1020107000648 A KR 1020107000648A KR 20107000648 A KR20107000648 A KR 20107000648A KR 101498514 B1 KR101498514 B1 KR 101498514B1
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South Korea
Prior art keywords
test
memory
voltage
voltage level
operating
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KR1020107000648A
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English (en)
Korean (ko)
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KR20100047216A (ko
Inventor
카디르 에이. 큐레시
수샤마 다바르
토마스 쥬
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프리스케일 세미컨덕터, 인크.
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
KR1020107000648A 2007-07-13 2008-05-28 메모리용 동적 전압 조정 Active KR101498514B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/777,635 2007-07-13
US11/777,635 US7616509B2 (en) 2007-07-13 2007-07-13 Dynamic voltage adjustment for memory
PCT/US2008/064969 WO2009011977A1 (en) 2007-07-13 2008-05-28 Dynamic voltage adjustment for memory

Publications (2)

Publication Number Publication Date
KR20100047216A KR20100047216A (ko) 2010-05-07
KR101498514B1 true KR101498514B1 (ko) 2015-03-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107000648A Active KR101498514B1 (ko) 2007-07-13 2008-05-28 메모리용 동적 전압 조정

Country Status (6)

Country Link
US (1) US7616509B2 (enExample)
JP (1) JP5462160B2 (enExample)
KR (1) KR101498514B1 (enExample)
CN (1) CN101743598B (enExample)
TW (1) TWI490873B (enExample)
WO (1) WO2009011977A1 (enExample)

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Also Published As

Publication number Publication date
CN101743598A (zh) 2010-06-16
KR20100047216A (ko) 2010-05-07
US20090016140A1 (en) 2009-01-15
CN101743598B (zh) 2013-07-24
JP5462160B2 (ja) 2014-04-02
WO2009011977A1 (en) 2009-01-22
JP2010534896A (ja) 2010-11-11
US7616509B2 (en) 2009-11-10
TWI490873B (zh) 2015-07-01
TW200907990A (en) 2009-02-16

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